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51. 发明申请

US20130331217A1 MOTOR DRIVING FORCE TRANSMISSION DEVICE 审中-公开
标题翻译：电机驱动力传动装置
公开(公告)号：US20130331217A1
公开(公告)日：2013-12-12
申请号：US13979304
申请日：2012-01-11
申请人： Tsune Kobayashi , Tohru Onozaki , Masaharu Tagami , Motoyasu Yamamori , Hiroshi Takuno , Kunihiko Suzuki , Tomoyoshi Takai , Keita Nomura
发明人： Tsune Kobayashi , Tohru Onozaki , Masaharu Tagami , Motoyasu Yamamori , Hiroshi Takuno , Kunihiko Suzuki , Tomoyoshi Takai , Keita Nomura
IPC分类号： F16H48/20
CPC分类号： F16H48/20 , B60K1/02 , B60K6/365 , B60K6/52 , B60K7/0007 , B60K17/356 , B60L3/0061 , B60L15/20 , B60L50/16 , B60L50/61 , B60L2220/44 , B60L2240/36 , B60L2240/423 , B60L2240/425 , B60L2260/28 , B60W10/08 , B60W20/00 , B60W30/1843 , B60W2510/087 , B60W2710/083 , B60W2720/406 , F16H48/08 , F16H48/34 , F16H2001/325 , H02K7/116 , Y02T10/6217 , Y02T10/6265 , Y02T10/641 , Y02T10/645 , Y02T10/646 , Y02T10/7077 , Y02T10/72 , Y02T10/7275 , Y10T74/19642
摘要： A motor driving force transmission device including a speed reduction and transmission mechanism which transmits a motor driving force to a rear differential, a first electric motor that is connected to the rear differential via the speed reduction and transmission mechanism and which produces a first motor driving force, a second electric motor that is connected to the first electric motor and the speed reduction and transmission mechanism and which produces a second motor driving force, and an ECU. The ECU outputs a control signal to drive both the first electric motor and the second electric motor when a driving torque required for the rear differential is equal to or larger than a predetermined torque, and outputs a control signal to drive alternately the first electric motor and the second electric motor when the driving torque required for the rear differential is smaller than the predetermined torque.
摘要翻译：一种电动机驱动力传递装置，包括将电动机驱动力传递到后差速器的减速传动机构，经由减速传动机构与后差速器连接并产生第一电动机驱动力的第一电动机连接到第一电动机和减速传动机构并产生第二电动机驱动力的第二电动机和ECU。当后差速器所需的驱动转矩等于或大于预定转矩时，ECU输出控制信号以驱动第一电动机和第二电动机，并输出控制信号以交替驱动第一电动机和当后差速器所需的驱动扭矩小于预定扭矩时，第二电动机。

52. 发明申请

US20130324342A1 MOTOR DRIVING FORCE TRANSMISSION DEVICE 审中-公开
标题翻译：电机驱动力传动装置
公开(公告)号：US20130324342A1
公开(公告)日：2013-12-05
申请号：US13979289
申请日：2012-01-11
申请人： Tohru Onozaki , Tsune Kobayashi , Masaharu Tagami , Motoyasu Yamamori , Hiroshi Takuno , Kunihiko Suzuki , Tomoyoshi Takai , Keita Nomura , Hideki Shibata
发明人： Tohru Onozaki , Tsune Kobayashi , Masaharu Tagami , Motoyasu Yamamori , Hiroshi Takuno , Kunihiko Suzuki , Tomoyoshi Takai , Keita Nomura , Hideki Shibata
IPC分类号： F16H48/34
CPC分类号： F16H48/20 , B60K1/02 , B60K6/365 , B60K6/52 , B60K7/0007 , B60K17/356 , B60L3/0061 , B60L15/20 , B60L50/16 , B60L50/61 , B60L2220/44 , B60L2240/36 , B60L2240/423 , B60L2240/425 , B60L2260/28 , B60W10/08 , B60W20/00 , B60W30/1843 , B60W2510/087 , B60W2710/083 , B60W2720/406 , F16H48/08 , F16H48/34 , F16H2001/325 , H02K7/116 , Y02T10/6217 , Y02T10/6265 , Y02T10/641 , Y02T10/645 , Y02T10/646 , Y02T10/7077 , Y02T10/72 , Y02T10/7275 , Y10T74/19642
摘要： A motor driving force transmission device includes electric motors which produce motor driving force with which a rear differential is operated and a speed reduction and transmission mechanism which reduces the speed of the motor driving force of the electric motors and transmits it to the rear differential. The speed reduction and transmission mechanism has eccentric cams which rotate as the electric motors are driven, transmission members which rotate as the eccentric cams rotate, and is disposed on an outer circumference of the rear differential.
摘要翻译：电动机驱动力传递装置包括产生后差速器的电动机驱动力的电动机，以及降低电动机的电动机驱动力的速度并将其传递到后差速器的减速传动机构。减速传动机构具有随着电动马达驱动而转动的偏心凸轮，随着偏心凸轮旋转而旋转的传动部件，并配置在后差速器的外周。

53. 发明授权

US08597429B2 Manufacturing apparatus and method for semiconductor device 有权
标题翻译：半导体器件的制造装置和方法
公开(公告)号：US08597429B2
公开(公告)日：2013-12-03
申请号：US13350102
申请日：2012-01-13
申请人： Kunihiko Suzuki , Hironobu Hirata
发明人： Kunihiko Suzuki , Hironobu Hirata
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： C23C16/4401 , C23C16/24 , C23C16/4412
摘要： Provided is a semiconductor manufacturing apparatus including: a reaction chamber including a gas supply inlet and a gas exhaust outlet, and into which a wafer is to be introduced; a process gas supply mechanism that supplies process gas into the reaction chamber from the gas supply inlet of the reaction chamber; a wafer retaining member that is arranged in the reaction chamber and that retains the wafer; a heater that heats the wafer retained by the wafer retaining member to a predetermined temperature; a rotation drive control mechanism that rotates the wafer retaining member together with the wafer; a gas exhaustion mechanism that exhausts gas in the reaction chamber from the gas exhaust outlet of the reaction chamber; and a drain that is disposed at a bottom portion near a wall surface in the reaction chamber and that collects and discharges oily silane that drips from the wall surface.
摘要翻译：提供一种半导体制造装置，包括：反应室，包括气体供给入口和排气出口，并且其中将引入晶片; 处理气体供给机构，其从所述反应室的气体供给口向所述反应室供给处理气体; 晶片保持构件，其布置在所述反应室中并保持所述晶片; 将由晶片保持构件保持的晶片加热到预定温度的加热器; 旋转驱动控制机构，其使晶片保持构件与晶片一起旋转; 气体排出机构，其从反应室的排气口排出反应室中的气体; 以及设置在反应室内的壁面附近的底部并排出从壁面滴下的油性硅烷的排水管。

54. 发明申请

US20130084690A1 MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造设备和半导体器件的方法
公开(公告)号：US20130084690A1
公开(公告)日：2013-04-04
申请号：US13685870
申请日：2012-11-27
申请人： Kunihiko Suzuki , Shinichi Mitani
发明人： Kunihiko Suzuki , Shinichi Mitani
IPC分类号： H01L21/02
CPC分类号： H01L21/02639 , C23C16/4584 , C23C16/4586 , C30B25/10 , H01L21/67109 , H01L21/68792
摘要： A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring.
摘要翻译：半导体器件制造装置包括其中装载晶片的腔室; 用于将处理气体供应到所述室中的第一气体供应单元; 用于从所述室排出气体的排气单元; 其上放置晶片的晶片支撑构件; 其上放置有晶片支撑构件的环; 旋转驱动控制单元，连接到所述环以旋转晶片; 设置在所述环中并且包括用于将晶片加热到预定温度并且在至少一个表面上包括SiC层的加热器元件的加热器和与加热器元件整体模制并且包括至少一个SiC层的SiC层的加热器电极部分表面; 以及用于将SiC源气体供给到所述环中的第二气体供给单元。

55. 发明申请

US20130036968A1 FILM-FORMING APPARATUS AND METHOD 有权
标题翻译：成膜装置和方法
公开(公告)号：US20130036968A1
公开(公告)日：2013-02-14
申请号：US13568872
申请日：2012-08-07
申请人： Kunihiko Suzuki , Shinichi Mitani , Yuusuke Sato
发明人： Kunihiko Suzuki , Shinichi Mitani , Yuusuke Sato
IPC分类号： C30B25/12 , C30B25/14 , C30B25/16 , C23C16/44 , C30B25/10
CPC分类号： C30B29/06 , C23C16/4411 , C23C16/45565 , C23C16/45589 , C30B25/12
摘要： A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas, a cylindrical shaped liner provided in the film-forming chamber, a straightening vane provided above the liner for the reaction gas to pass through, wherein the outside of the film-forming chamber connects the inside of the liner via a substrate transfer portion provided at the wall of the film-forming chamber by moving the straightening vane from the position that the straightening vane closes the upper opening of the liner. A substrate supporting portion provided in the liner, for supporting the substrate before the film-forming to move the substrate in a vertical direction, a substrate transfer unit capable of moving inside the film-forming chamber through the substrate transfer portion, wherein the substrate is transferred between the substrate supporting portion and the substrate transfer unit.
摘要翻译：一种成膜装置和方法，包括：用于提供反应气体的成膜室，设置在成膜室中的圆柱形衬垫，设置在衬套上方的用于反应气体通过的矫直叶片，其中外部成膜室通过从整形叶片封闭衬垫的上部开口的位置移动矫直叶片，通过设置在成膜室的壁处的衬底转移部分来连接衬里的内部。一种基板支撑部分，其设置在所述衬垫中，用于在成膜之前支撑所述基板以在垂直方向上移动所述基板;基板转移单元，其能够通过所述基板转移部分在所述成膜室内移动，其中所述基板为在衬底支撑部分和衬底转移单元之间转移。

56. 发明申请

US20120329596A1 SPEED REDUCTION MECHANISM AND MOTOR TORQUE TRANSMISSION DEVICE INCLUDING THE SPEED REDUCTION MECHANISM 有权
标题翻译：减速机构和电机扭矩传动装置，包括减速机构
公开(公告)号：US20120329596A1
公开(公告)日：2012-12-27
申请号：US13525961
申请日：2012-06-18
申请人： Keita Nomura , Kunihiko Suzuki , Tomoyoshi Takai
发明人： Keita Nomura , Kunihiko Suzuki , Tomoyoshi Takai
IPC分类号： F16H57/04
CPC分类号： B60K17/356 , B60K2001/001 , B60L11/14 , B60L2240/486 , B60L2260/28 , F16H1/32 , F16H57/0428 , F16H57/0434 , F16H57/0483 , F16H57/0486 , F16H2001/323 , Y02T10/70 , Y02T10/7077
摘要： A speed reduction mechanism includes: a speed reduction unit that includes an input member formed of an external gear that makes circular motion about a rotation axis with an eccentric amount, and a rotation force applying member formed of an internal gear that is in mesh with the input member; and a lubricating oil supply unit that supplies lubricating oil to a bearing of the speed reduction unit. The lubricating oil supply unit includes an oil tank arranged outside of the rotation force applying member, an oil delivery passage that delivers the lubricating oil to the oil tank, and a first oil introduction passage that introduces the lubricating oil from the oil tank to the bearing. The lubricating oil is delivered to the oil delivery passage through pumping action of the input member based on the circular motion.
摘要翻译：一种减速机构包括：减速单元，包括由外齿轮构成的输入构件，所述输入构件围绕旋转轴线以偏心量进行圆周运动;以及旋转力施加构件，所述旋转力施加构件由内齿轮形成，所述内齿轮与所述内齿轮啮合，输入成员以及向所述减速单元的轴承供给润滑油的润滑油供给单元。润滑油供给单元包括设置在旋转力施加部件的外侧的油箱，将润滑油输送到油箱的输油路，以及将润滑油从油箱引导到轴承的第一油引入通路。基于圆周运动，润滑油通过输入构件的抽吸作用输送到输油通道。

57. 发明授权

US08337622B2 Manufacturing apparatus and method for semiconductor device 有权
标题翻译：半导体器件的制造装置和方法
公开(公告)号：US08337622B2
公开(公告)日：2012-12-25
申请号：US12903384
申请日：2010-10-13
申请人： Kunihiko Suzuki , Shinichi Mitani
发明人： Kunihiko Suzuki , Shinichi Mitani
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/301
CPC分类号： H01L21/02639 , C23C16/4584 , C23C16/4586 , C30B25/10 , H01L21/67109 , H01L21/68792
摘要： A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring.
摘要翻译：半导体器件制造装置包括其中装载晶片的腔室; 用于将处理气体供应到所述室中的第一气体供应单元; 用于从所述室排出气体的排气单元; 其上放置晶片的晶片支撑构件; 其上放置有晶片支撑构件的环; 旋转驱动控制单元，连接到所述环以旋转晶片; 设置在所述环中并且包括用于将晶片加热到预定温度并且在至少一个表面上包括SiC层的加热器元件的加热器和与加热器元件整体模制并且包括至少一个SiC层的SiC层的加热器电极部分表面; 以及用于将SiC源气体供给到所述环中的第二气体供给单元。

58. 发明授权

US08334214B2 Susceptor treatment method and a method for treating a semiconductor manufacturing apparatus 有权
标题翻译：受体处理方法和半导体制造装置的处理方法
公开(公告)号：US08334214B2
公开(公告)日：2012-12-18
申请号：US13170867
申请日：2011-06-28
申请人： Kunihiko Suzuki , Shinichi Mitani
发明人： Kunihiko Suzuki , Shinichi Mitani
IPC分类号： H01L21/302
CPC分类号： C23C16/325 , C23C16/4404 , C23C16/4405 , C30B25/12 , H01L21/02529 , H01L21/0262
摘要： A susceptor treatment method including placing a first substrate on a susceptor and forming a Si film on the first substrate by epitaxial growth, placing a second substrate on the susceptor in place of the first substrate and forming a SiC film on the second substrate by epitaxial growth, and allowing HCl gas to flow downward from above the susceptor while the susceptor, from which the second substrate has been removed, is heated to a temperature and rotated to remove the remaining crystalline grains derived from the epitaxial growth of Si film and the SiC film on the susceptor.
摘要翻译：一种感受器处理方法，包括：通过外延生长将第一衬底放置在基座上并在第一衬底上形成Si膜，将第二衬底置于基座上代替第一衬底，并通过外延生长在第二衬底上形成SiC膜，并且允许HCl气体从基座的上方向下流动，同时将已经从其移除第二基板的基座加热到温度并旋转以除去由Si膜和SiC膜的外延生长衍生的剩余晶粒在感受器上。

59. 发明申请

US20120217487A1 Light-Emitting Device 有权
标题翻译：发光装置
公开(公告)号：US20120217487A1
公开(公告)日：2012-08-30
申请号：US13405627
申请日：2012-02-27
申请人： Shunpei Yamazaki , Satoshi Seo , Nobuharu Ohsawa , Satoko Shitagaki , Hideko Inoue , Hiroshi Kadoma , Harue Osaka , Kunihiko Suzuki , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Satoshi Seo , Nobuharu Ohsawa , Satoko Shitagaki , Hideko Inoue , Hiroshi Kadoma , Harue Osaka , Kunihiko Suzuki , Yasuhiko Takemura
IPC分类号： H01L51/54
CPC分类号： H01L51/0059 , H01L51/0067 , H01L2251/5384 , H01L2251/552
摘要： A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.
摘要翻译：发光元件包括在一对电极之间包括客体，n型主机和p型主机的发光层，其中三重激发态与基态之间的能量差之间的差异 n型主机（或p型主机），并且三重激发状态与客户的基态之间的能量差为0.15eV以上。或者，在这种发光元件中，n型主机的LUMO电平高于客户的LUMO电平0.1eV以上，或p型主机的HOMO电平低于HOMO电平的客人0.1 eV以上。

60. 发明申请

US20120031330A1 SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS 有权
标题翻译：半导体基板制造设备
公开(公告)号：US20120031330A1
公开(公告)日：2012-02-09
申请号：US13187904
申请日：2011-07-21
申请人： Toshiro TSUMORI , Shinichi Mitani , Kunihiko Suzuki
发明人： Toshiro TSUMORI , Shinichi Mitani , Kunihiko Suzuki
IPC分类号： C30B25/16 , C30B25/12
CPC分类号： C30B25/12 , C23C14/021 , C23C16/0227 , C23C16/22 , C23C16/32 , C23C16/325 , C23C16/4405 , C23C16/46 , C30B29/36 , C30B33/12
摘要： According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield.
摘要翻译：根据本实施方式，将用于外延生长的半导体衬底制造装置供给到放置在基座上的晶片，并且在基座的背面设置有加热器。作为这种外延生长的结果，SiC膜沉积在成膜室中的基座上。然后将基座移动到单独的室中，并且在外延过程中沉积在基座上的SiC膜被去除。在去除SiC膜之后，发生感受器的SiC膜的再生。该半导体衬底制造装置使得可以在外延生长期间去除沉积在基座上的膜，否则会限制制造成品率。

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