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1. 发明申请

US20120031330A1 SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS 有权
标题翻译：半导体基板制造设备
公开(公告)号：US20120031330A1
公开(公告)日：2012-02-09
申请号：US13187904
申请日：2011-07-21
申请人： Toshiro TSUMORI , Shinichi Mitani , Kunihiko Suzuki
发明人： Toshiro TSUMORI , Shinichi Mitani , Kunihiko Suzuki
IPC分类号： C30B25/16 , C30B25/12
CPC分类号： C30B25/12 , C23C14/021 , C23C16/0227 , C23C16/22 , C23C16/32 , C23C16/325 , C23C16/4405 , C23C16/46 , C30B29/36 , C30B33/12
摘要： According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield.
摘要翻译：根据本实施方式，将用于外延生长的半导体衬底制造装置供给到放置在基座上的晶片，并且在基座的背面设置有加热器。作为这种外延生长的结果，SiC膜沉积在成膜室中的基座上。然后将基座移动到单独的室中，并且在外延过程中沉积在基座上的SiC膜被去除。在去除SiC膜之后，发生感受器的SiC膜的再生。该半导体衬底制造装置使得可以在外延生长期间去除沉积在基座上的膜，否则会限制制造成品率。

2. 发明申请

US20100248458A1 COATING APPARATUS AND COATING METHOD 审中-公开
标题翻译：涂装和涂装方法
公开(公告)号：US20100248458A1
公开(公告)日：2010-09-30
申请号：US12730571
申请日：2010-03-24
申请人： Shinichi MITANI , Kunihiko SUZUKI , Toshiro TSUMORI
发明人： Shinichi MITANI , Kunihiko SUZUKI , Toshiro TSUMORI
IPC分类号： H01L21/205 , C23C16/34
CPC分类号： C30B25/08 , C23C16/54 , C30B25/16 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： The present invention provides a coating apparatus capable of efficiently performing a deposition process and also provides an efficient coating method.A coating apparatus 1 for performing a deposition process on substrates W placed in a coating chamber by metalorganic chemical vapor deposition includes three or more coating chambers, e.g., a first coating chamber 2, a second coating chamber 102, and a third coating chamber 202. These coating chambers are configured such that each coating chamber is controlled independently of the other coating chambers to form a different film on the substrates W by controlling at least the composition of the material gas, the flow rate of material gas, the temperature, and the pressure in the coating chamber. A cleaning unit 5 is provided outside the coating chambers 2, 102, 202 to clean the susceptor after the deposition process.
摘要翻译：本发明提供能够有效地进行沉积工艺的涂覆设备，并且还提供有效的涂覆方法。用于通过金属有机化学气相沉积在衬底W上进行沉积处理的涂覆设备1包括三个或更多个涂覆室，例如第一涂覆室2，第二涂覆室102和第三涂覆室202。这些涂布室被构造成使得每个涂布室被独立于其它涂布室控制，以通过至少控制材料气体的组成，材料气体的流速，温度和温度来在基板W上形成不同的膜涂层室内的压力。清洁单元5设置在涂布室2,102,202的外侧，以在沉积处理之后清洁基座。

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