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    • 55. 发明申请
    • Process for producing low-k dielectric films
    • 低k电介质薄膜的制造方法
    • US20070166456A1
    • 2007-07-19
    • US10563450
    • 2004-06-02
    • Adolf KuehnleCarsten JostHartwig RaulederCome RentropRoelant Van DamKlaas TimmerHartmut Fischer
    • Adolf KuehnleCarsten JostHartwig RaulederCome RentropRoelant Van DamKlaas TimmerHartmut Fischer
    • B05D3/12B05D3/02
    • H01L21/02126C09D183/04H01L21/02203H01L21/02216H01L21/02282H01L21/31695
    • The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(RaXbSiO1.5)m(RcYdSiO)n] with: a, b=0-1; c, d=1; m+n≧3; a+b=1; n, m≧1, R=hydrogen atom or alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, in each case substituted or unsubstituted, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents of type R containing at least one such group of type X, Y=hydroxyl, alkoxy or a substituent of type O—SiZ1Z2Z3, where Z1, Z2 and Z3 are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate or a nitrile group or substituents of type R and are identical or different, not only the substituents of type R being identical or different but also the substituents of type X and Y in each case being identical or different, and comprising at least one hydroxyl group as substituent of type Y, for producing the film, and to low-k dielectric films produced by this process.
    • 本发明涉及用于在半导体或电路上生产低k电介质膜的方法,其包括使用下式的不完全缩合的多面体低聚倍半硅氧烷:[(R a)a< b> 其中:a(a)和(c),m ,b = 0-1; c,d = 1; m + n> = 3; a + b = 1; n,m = 1,R =氢原子或烷基,环烷基,烯基,环烯基,炔基,环炔基,芳基或杂芳基,各自为取代或未取代的,X =氧基,羟基,烷氧基,羧基,甲硅烷基, 卤素,环氧基,酯,氟代烷基,异氰酸酯,丙烯酸酯,甲基丙烯酸酯,腈,氨基或膦基或含有至少一个X,Y =羟基,烷氧基或O-SiZ型取代基的至少一种的R型取代基, 其中Z 1,Z 2和Z 3是氟代烷基,烷氧基,甲硅烷氧基,环氧基,酯,丙烯酸酯,甲基丙烯酸酯或腈基或R的取代基相同或不同,不仅R的取代基相同或不同,而且取代基 X和Y各自相同或不同,并且包含至少一个作为Y型取代基的羟基,用于制备该膜,以及通过该方法制备的低k电介质膜。
    • 57. 发明授权
    • Process for the production of organosilicon compounds
    • 生产有机硅化合物的方法
    • US5068382A
    • 1991-11-26
    • US491775
    • 1990-03-12
    • Hartwig RaulederHans-Joachim Kotzch
    • Hartwig RaulederHans-Joachim Kotzch
    • C07F7/18
    • C07F7/188C07F7/182
    • Organosilicon compounds of the formula ##STR1## wherein R.sup.1 and R.sup.2 are each independently straight or branched alkyl of 1 to 4 carbon atoms or --OR.sup.3,R.sup.3 is R.sup.4 --(OR.sup.5).sub.m --,R.sup.6 is straight or branched alkyl of 1 to 4 carbon atoms,m is an integer from 0 to 6, inclusive,R.sup.5 is straight or branched alkylene of 2 to 4 carbon atoms, which may be identical or different when m is an integer from 2 to 6, andR.sup.6 is straight or branched alkylene of 2 to 6 carbon atoms,are prepared by reacting hydrogensilanes of the formula ##STR2## wherein R.sup.7 are identical or different groups R.sup.4 or the group OR.sup.4, and R.sup.4 has the previously indicated meaning,with terminally unsaturated ethers of the formulaR.sup.4 --(OR.sup.5).sub.m --OR.sup.8whereinm, R.sup.4 and R.sup.5 have the previously indicated meanings, andR.sup.8 is terminally unsaturated straight or branched alkenyl or 2 to 6 carbon atoms,in the presence of a catalyst at controlled temperatures to form addition products of the formula ##STR3## wherein m and R.sup.4, R.sup.5, R.sup.6 and R.sup.7 have the previously indicated meanings, and the R.sup.4 's are identical or differentwhich are converted into the desired end products by thermal and/or catalytic transesterification with monofunctional hydroxy compounds of the formulaR.sup.4 --(OR.sup.5).sub.m OHwhereinm, R.sup.4 and R.sup.5 have the previously indicated meanings.
    • 其中R 1和R 2各自独立地为具有1至4个碳原子的直链或支链烷基或-OR 3,R 3为R 4 - (OR 5)m - ,R 6为具有1至4个碳原子的直链或支链烷基的有机硅化合物 原子,m为0〜6的整数,包括0和6的整数,R 5为2〜4个碳原子的直链或支链亚烷基,当m为2〜6的整数时,可以相同或不同,R6为直链或支链的亚烷基 2至6个碳原子的化合物通过使下式的化合物:其中R 7为相同或不同的基团R 4或基团OR 4,且R 4具有前述含义的氢化山西与式R4-(OR5)的末端不饱和醚反应制备, m-OR 8,其中m,R 4和R 5具有前述含义,并且R 8是在受控温度下在催化剂存在下的末端不饱和的直链或支链烯基或2-6个碳原子,以形成下式的加成产物: 其中m和R4,R5,R6和R7具有之前的 并且R4相同或不同,其通过用式R 4 - (OR 5)m OH的单官能羟基化合物的热和/或催化酯交换转化为所需的最终产物,其中m,R 4和R 5具有前面所述的含义。
    • 58. 发明授权
    • Process for the coupled preparation of trisilylamine and polysilazanes having a molar mass of up to 500 g/mol
    • 具有摩尔质量高达500g / mol的三甲胺和聚硅氮烷的偶联制备方法
    • US09446954B2
    • 2016-09-20
    • US14345587
    • 2013-06-05
    • Carl-Friedrich HoppeChristian GoetzGoswin UehlenbruckHartwig Rauleder
    • Carl-Friedrich HoppeChristian GoetzGoswin UehlenbruckHartwig Rauleder
    • C01B21/087B01D3/14C08G77/62B01J19/24
    • C01B21/087B01D3/143B01J19/24B01J2219/24C08G77/62
    • The invention relates to a process for preparing trisilylamine and polysilazanes in the liquid phase, in which ammonia is introduced in a superstoichiometric amount relative to 5 monochlorosilane which is present in an inert solvent. Here, a reaction in which trisilylamine and polysilazanes are formed proceeds. TSA is subsequently separated off in gaseous form from the product mixture. The TSA obtained is purified by filtration and distillation and obtained in high or very high purity. The bottom product mixture is conveyed from the reactor through a filter unit in which solid ammonium chloride is separated off to give a liquid mixture of polysilazanes and solvent. This is fed to a further distillation to recover solvent. As a result of the NH3 being introduced in a superstoichiometric amount relative to monochlorosilane, monochlorosilane is completely reacted in the reactor. This completely prevents the reaction of monochlorosilane with additional disilylamine formed in small amounts to form solid ammonium chloride in the downstream plant parts for purification of the TSA. The solutions filtered downstream of the reactor are accordingly completely free of solids.
    • 本发明涉及一种在液相中制备三甲胺和聚硅氮烷的方法,其中相对于存在于惰性溶剂中的5个一氯硅烷,以超化学计量的量引入氨。 这里,形成三甲基胺和聚硅氮烷的反应。 TSA随后从产物混合物中分离出气态。 通过过滤和蒸馏纯化获得的TSA,得到高纯度或非常高的纯度。 底部产物混合物从反应器通过过滤器单元输送,其中分离固体氯化铵以得到聚硅氮烷和溶剂的液体混合物。 将其进料进一步蒸馏以回收溶剂。 作为相对于一氯硅烷以超化学计量量引入NH 3的结果,一氯硅烷在反应器中完全反应。 这完全防止一氯甲硅烷与少量形成的另外的二甲硅烷的反应在下游的植物部分中形成固体氯化铵,用于纯化TSA。 因此,在反应器下游过滤的溶液完全不含固体。