专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110163462A1 Universal Infrastructure for Chemical Processes 审中-公开
标题翻译：化学工艺通用基础设施
公开(公告)号：US20110163462A1
公开(公告)日：2011-07-07
申请号：US13063171
申请日：2009-05-14
申请人： Jürgen Erwin Lang , Carl-Friedrich Hoppe , Hartwig Rauleder , Ekkehard Müh
发明人： Jürgen Erwin Lang , Carl-Friedrich Hoppe , Hartwig Rauleder , Ekkehard Müh
IPC分类号： C07G99/00 , G05B1/00
CPC分类号： B01J19/00 , B01J2219/00015 , B01J2219/00022 , B01J2219/00225
摘要： The invention relates to a plant for carrying out chemical processes comprising at least means for directly carrying out the conversion in the form of means for developing products and/or in the form of at least one reactor for the continuous industrial manufacture of products, devices for receiving and/or providing starting materials and/or products and devices for controlling the conversion, which are combined to a single integrated and transportable functional unit serving as infrastructure, preferably in the form of a standardised transport container.
摘要翻译：本发明涉及一种用于执行化学过程的设备，该设备至少包括用于以用于开发产品和/或以至少一个反应器的形式直接进行转化的装置，用于产品的连续工业化生产的装置，用于接收和/或提供用于控制转换的起始材料和/或产品和装置，其被组合到用作基础设施的单个集成和可运输的功能单元，优选地以标准化运输容器的形式。

2. 发明申请

US20110262339A1 PRODUCTION OF SOLAR-GRADE SILICON FROM SILICON DIOXIDE 审中-公开
标题翻译：从二氧化硅生产太阳能级硅
公开(公告)号：US20110262339A1
公开(公告)日：2011-10-27
申请号：US13121759
申请日：2009-09-28
申请人： Hartwig Rauleder , Ekkehard Müh , Mustafa Siray , Peter Nagler , Bodo Frings , Ingrid Lunt-Rieg , Alfons Karl , Christian Panz , Thomas Groth , Guido Stochniol , Matthias Rochnia , Jürgen Erwin Lang , Oliver Wolf , Rudolf Schmitz , Bernd Nowitzki , Dietmar Wewers
发明人： Hartwig Rauleder , Ekkehard Müh , Mustafa Siray , Peter Nagler , Bodo Frings , Ingrid Lunt-Rieg , Alfons Karl , Christian Panz , Thomas Groth , Guido Stochniol , Matthias Rochnia , Jürgen Erwin Lang , Oliver Wolf , Rudolf Schmitz , Bernd Nowitzki , Dietmar Wewers
IPC分类号： C01B33/025
CPC分类号： C01B33/025 , C01B32/05 , C01B33/148
摘要： The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a purified silicon oxide using one or more pure carbon sources, the purified silicon oxide, which was purified as silicon oxide dissolved in an aqueous phase, having a content of other polyvalent metals or metal oxides, in relation to the silicon oxide, of less than or equal to 300 ppm, preferably less than 100 ppm, especially preferably less than 50 ppm and according to the invention less than 10 ppm of the other metals and being obtained advantageously by gel formation in alkaline conditions. The invention also relates to a formulation containing an activator and to the use of purified silicon oxide together with an activator for producing silicon.
摘要翻译：本发明涉及一种适用于太阳能级硅的纯硅生产的完整方法，其中包括使用一种或多种纯碳源还原纯化的氧化硅，纯化的氧化硅被溶解为氧化硅在水相中，具有相对于氧化硅的其它多价金属或金属氧化物的含量小于或等于300ppm，优选小于100ppm，特别优选小于50ppm，并且根据本发明，较少超过10ppm的其他金属，并且有利地通过在碱性条件下的凝胶形成获得。本发明还涉及含有活化剂的配方和使用纯化的氧化硅以及用于生产硅的活化剂。

3. 发明申请

US20140017155A1 PROCESS FOR PREPARING TRICHLOROSILANE 审中-公开
标题翻译：制备三氯硅烷的方法
公开(公告)号：US20140017155A1
公开(公告)日：2014-01-16
申请号：US13884326
申请日：2011-10-13
申请人： Ekkehard Müh , Hartwig Rauleder , Bernd Nowitzki
发明人： Ekkehard Müh , Hartwig Rauleder , Bernd Nowitzki
IPC分类号： C01B33/107
CPC分类号： C01B33/10763 , C01B33/1071 , C01B33/10773
摘要： The present invention relates to a process for preparing trichlorosilane and optionally, if required, HCDS and OCTS, by a) in a first step, allowing silicon tetrachloride and silicon to react at a temperature of >800 to 1450° C., b) in a step two, cooling the product stream (PS) thus obtained from step one to obtain a product stream (PG2), c) optionally, in a step three, removing STC and HCDS from the product stream (PG2) to obtain, as a residue or bottom product, a product mixture (PG3), d) optionally, in a step four, removing OCTS from the product stream PG3 from step three, to obtain, as a residue or bottom product, a product mixture (PG4), e) in a step five, reacting the product stream (PG2) originating from step two or the product mixture (PG3) originating from step three or the product mixture (PG4) originating from step four, or a mixture of product streams PG2 and PG3 or a mixture of product streams PG2 and PG4 with hydrogen chloride to obtain a product stream (PHS), and f) in a subsequent step six, removing trichlorosilane from a product stream (PHS) thus obtained, and discharging the remaining STC-containing bottoms or recycling them as a reactant component into step one of the process.
摘要翻译：本发明涉及一种制备三氯硅烷的方法，以及任选地，如果需要，HCDS和OCTS，通过a）在第一步中，使四氯化硅和硅在> 800至1450℃的温度下反应，b）在步骤二，冷却从步骤1获得的产物流（PS）以获得产物流（PG2），c）任选地，在步骤3中，从产物流（PG2）中除去STC和HCDS，以获得作为残留物或底部产物，产物混合物（PG3），d）任选地，在步骤4中，从步骤3从产物流PG3中除去OCTS，得到作为残余物或底部产物的产物混合物（PG4），e ）在步骤5中使来自步骤2的产物流（PG2）或源自步骤3的产物混合物（PG3）或源自步骤4的产物混合物（PG4）或产物流PG2和PG3的混合物或产物流PG2和PG4与氯化氢的混合物以获得产物流（PHS），和f）in 随后的步骤6，从如此获得的产物流（PHS）中除去三氯硅烷，并排出剩余的含STC的底部物质或将其作为反应物组分再循环到该方法的第一步中。

4. 发明申请

US20140124706A1 PROCESS FOR PREPARING CHLOROSILANES BY MEANS OF HIGH-BOILING CHLOROSILANES OR CHLOROSILANE-CONTAINING MIXTURES 审中-公开
标题翻译：通过高沸点氯化硅或含氯化物混合物制备氯硅烷的方法
公开(公告)号：US20140124706A1
公开(公告)日：2014-05-08
申请号：US14111643
申请日：2012-02-28
申请人： Ekkehard Müh , Hartwig Rauleder , Reinhold Schork
发明人： Ekkehard Müh , Hartwig Rauleder , Reinhold Schork
IPC分类号： C01B33/107
CPC分类号： C01B33/10742 , C01B33/10715
摘要： The invention relates to a process for preparing chlorosilanes of the general formula H4-nSiCln with n=1, 2, 3, and/or 4, the process being characterized in that silicon in a silicon bed is reacted with Cl2 or HCl and with at least one silicon-containing compound in a reactor.
摘要翻译：本发明涉及一种制备具有n = 1,2,3，和/或4的通式为H4-nSiCln的氯硅烷的方法，其特征在于硅床中的硅与Cl 2或HCl反应，在反应器中含有至少一种含硅化合物。

5. 发明申请

US20120177557A1 PROCESS FOR TREATING CATALYST PRECURSORS 审中-公开
标题翻译：处理催化剂前体的方法
公开(公告)号：US20120177557A1
公开(公告)日：2012-07-12
申请号：US13383965
申请日：2010-05-17
申请人： Hartwig Rauleder , Ekkehard Müh , Reinhold Schork , Uwe Schön
发明人： Hartwig Rauleder , Ekkehard Müh , Reinhold Schork , Uwe Schön
IPC分类号： C01B33/107 , B01J37/08 , B01J31/06
CPC分类号： B01J31/08 , B01J37/08 , B01J41/04 , B01J41/07 , C01B33/107 , C01B33/10773 , C01P2006/80 , C07F7/125
摘要： The invention relates to a process for treating a substantially water-containing amino-functional, polymeric catalyst precursor while retaining the inner porous structure thereof and the outer spherical form thereof to form a catalyst, in which the catalyst precursor is treated at mild temperatures and under reduced pressure to prepare a catalyst having a water content below 2.5% by weight. The process is preferably integrated into an industrial scale process for preparing dichlorosilane, monosilane, silane, or solar silicon or semiconductor silicon from silanes.
摘要翻译：本发明涉及一种用于处理基本上含水氨基官能的聚合催化剂前体的方法，同时保持其内部多孔结构和其外部球形形式，以形成催化剂，其中催化剂前体在温和的温度下和在减压以制备水含量低于2.5重量％的催化剂。该方法优选整合到从硅烷制备二氯硅烷，硅烷，硅烷或太阳硅或半导体硅的工业规模方法中。

6. 发明授权

US07507850B2 Preparation of organosilane esters 失效
标题翻译：有机硅烷酯的制备
公开(公告)号：US07507850B2
公开(公告)日：2009-03-24
申请号：US11569585
申请日：2005-04-04
申请人： Ekkehard Müh , Hartwig Rauleder , Harald Klein
发明人： Ekkehard Müh , Hartwig Rauleder , Harald Klein
IPC分类号： C07F7/04
CPC分类号： C07F7/188
摘要： The present invention relates to a specific process for preparing organosilane esters of the formula (I) and a composition comprising more than 98% by weight of organosilane esters of the formula (I) and less than 2.0% by weight of at least one hydrocarbon and to the use of such a composition as precursor for producing a layer or film having a dielectric constant of 1
摘要翻译：本发明涉及制备式（I）的有机硅烷酯和包含大于98重量％的式（I）的有机硅烷酯和小于2.0重量％的至少一种烃的组合物的具体方法，以及使用这种组合物作为制备介电常数为1 <κ4的层或膜的前体。

7. 发明申请

US20060204767A1 Corrosion protection on metals 失效
标题翻译：金属腐蚀保护
公开(公告)号：US20060204767A1
公开(公告)日：2006-09-14
申请号：US10552918
申请日：2003-09-23
申请人： Philipp Albert , Ekkehard Müh , Eckhard Just
发明人： Philipp Albert , Ekkehard Müh , Eckhard Just
IPC分类号： B32B15/04 , B32B9/04 , B05D3/00 , B05D3/02 , B05D1/36
CPC分类号： C23C28/00 , B05D3/0254 , B05D7/14 , B05D7/584 , C09D4/00 , C23C18/1212 , C23C18/1225 , C23C18/1241 , C23C18/1254 , C23C18/1295 , C23C2222/20 , Y10T428/31663 , Y10T428/31678 , C08G77/00 , C08G77/04
摘要： The present invention relates to a coating on a metal to protect against corrosion, comprising the following layer sequence: (i) metal surface, (ii) layer based on a sol containing silicon compounds, (iii) layer based on at least one organosilane, (iv) if desired, one or more coating films. The present invention further relates to a process for producing such a coating and to the use thereof.
摘要翻译：本发明涉及一种金属上的涂层以防腐蚀，包括以下层序：（i）金属表面，（ii）基于含有硅化合物的溶胶层，（iii）基于至少一种有机硅烷的层，（iv）如果需要，一个或多个涂膜。本发明还涉及这种涂料的制造方法及其用途。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式