专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070166456A1 Process for producing low-k dielectric films 失效
标题翻译：低k电介质薄膜的制造方法
公开(公告)号：US20070166456A1
公开(公告)日：2007-07-19
申请号：US10563450
申请日：2004-06-02
申请人： Adolf Kuehnle , Carsten Jost , Hartwig Rauleder , Come Rentrop , Roelant Van Dam , Klaas Timmer , Hartmut Fischer
发明人： Adolf Kuehnle , Carsten Jost , Hartwig Rauleder , Come Rentrop , Roelant Van Dam , Klaas Timmer , Hartmut Fischer
IPC分类号： B05D3/12 , B05D3/02
CPC分类号： H01L21/02126 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(RaXbSiO1.5)m(RcYdSiO)n] with: a, b=0-1; c, d=1; m+n≧3; a+b=1; n, m≧1, R=hydrogen atom or alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, in each case substituted or unsubstituted, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents of type R containing at least one such group of type X, Y=hydroxyl, alkoxy or a substituent of type O—SiZ1Z2Z3, where Z1, Z2 and Z3 are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate or a nitrile group or substituents of type R and are identical or different, not only the substituents of type R being identical or different but also the substituents of type X and Y in each case being identical or different, and comprising at least one hydroxyl group as substituent of type Y, for producing the film, and to low-k dielectric films produced by this process.
摘要翻译：本发明涉及用于在半导体或电路上生产低k电介质膜的方法，其包括使用下式的不完全缩合的多面体低聚倍半硅氧烷：[（R a）a＆lt; b＆gt; 其中：a（a）和（c），m ，b = 0-1; c，d = 1; m + n> = 3; a + b = 1; n，m = 1，R =氢原子或烷基，环烷基，烯基，环烯基，炔基，环炔基，芳基或杂芳基，各自为取代或未取代的，X =氧基，羟基，烷氧基，羧基，甲硅烷基，卤素，环氧基，酯，氟代烷基，异氰酸酯，丙烯酸酯，甲基丙烯酸酯，腈，氨基或膦基或含有至少一个X，Y =羟基，烷氧基或O-SiZ型取代基的至少一种的R型取代基，其中Z 1，Z 2和Z _{3是氟代烷基，烷氧基，甲硅烷氧基，环氧基，酯，丙烯酸酯，甲基丙烯酸酯或腈基或R的取代基相同或不同，不仅R的取代基相同或不同，而且取代基 X和Y各自相同或不同，并且包含至少一个作为Y型取代基的羟基，用于制备该膜，以及通过该方法制备的低k电介质膜。}

2. 发明授权

US07410914B2 Process for producing low-k dielectric films 失效
标题翻译：低k电介质薄膜的制造方法
公开(公告)号：US07410914B2
公开(公告)日：2008-08-12
申请号：US10563450
申请日：2004-06-02
申请人： Adolf Kuehnle , Carsten Jost , Hartwig Rauleder , Come Rentrop , Roelant Van Dam , Klaas Timmer , Hartmut Fischer
发明人： Adolf Kuehnle , Carsten Jost , Hartwig Rauleder , Come Rentrop , Roelant Van Dam , Klaas Timmer , Hartmut Fischer
IPC分类号： H01L21/00
CPC分类号： H01L21/02126 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The invention relates to processes for producing low-k dielectric films on semiconductors or electrical circuits, which comprises using incompletely condensed polyhedral oligomeric silsesquioxanes of the formula [(RaXbSiO1.5)m(RcYdSiO)n] with: a, b=0-1; c, d=1; m+n≧3; a+b=1; n, m≧1, R=hydrogen atom or alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, in each case substituted or unsubstituted, X=an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group or substituents of type R containing at least one such group of type X, Y=hydroxyl, alkoxy or a substituent of type O—SiZ1Z2Z3, where Z1, Z2 and Z3 are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate or a nitrile group or substituents of type R and are identical or different, not only the substituents of type R being identical or different but also the substituents of type X and Y in each case being identical or different, and comprising at least one hydroxyl group as substituent of type Y, for producing the film, and to low-k dielectric films produced by this process.
摘要翻译：本发明涉及用于在半导体或电路上生产低k电介质膜的方法，其包括使用下式的不完全缩合的多面体低聚倍半硅氧烷：[（R a）a＆lt; b＆gt; 其中：a（a）和（c），m ，b = 0-1; c，d = 1; m + n> = 3; a + b = 1; n，m = 1，R =氢原子或烷基，环烷基，烯基，环烯基，炔基，环炔基，芳基或杂芳基，各自为取代或未取代的，X =氧基，羟基，烷氧基，羧基，甲硅烷基，卤素，环氧基，酯，氟代烷基，异氰酸酯，丙烯酸酯，甲基丙烯酸酯，腈，氨基或膦基或含有至少一个X，Y =羟基，烷氧基或O-SiZ型取代基的至少一种的R型取代基，其中Z 1，Z 2和Z _{3是氟代烷基，烷氧基，甲硅烷氧基，环氧基，酯，丙烯酸酯，甲基丙烯酸酯或腈基或R的取代基相同或不同，不仅R的取代基相同或不同，而且取代基 X和Y各自相同或不同，并且包含至少一个作为Y型取代基的羟基，用于制备该膜，以及通过该方法制备的低k电介质膜。}

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式