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51. 发明授权

US07777316B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07777316B2
公开(公告)日：2010-08-17
申请号：US12239368
申请日：2008-09-26
申请人： Hiroyasu Ishida , Yasuyuki Sayama , Tetsuya Okada
发明人： Hiroyasu Ishida , Yasuyuki Sayama , Tetsuya Okada
IPC分类号： H01L23/02 , H01L23/34
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0653 , H01L29/0661 , H01L29/66734 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： Provided is a semiconductor device in which an insulating region surrounding an element region is provided in an end portion of a semiconductor region with a super junction structure. Since a depletion layer in the element region ends in the insulating region, the end portion of the element region is not formed in a curved surface shape. In other words, the depletion layer has no curved surface in which internal electric fields are concentrated. For this reason, there is no need to take a measure to cause the depletion layer to spread in a horizontal direction by proving a terminal region. Since the terminal region is unnecessary, a chip size can be reduced. Alternatively, an area of the element region can be expanded.
摘要翻译：提供一种半导体器件，其中在具有超结结构的半导体区域的端部中设置围绕元件区域的绝缘区域。由于元件区域中的耗尽层在绝缘区域中结束，元件区域的端部不形成为曲面形状。换句话说，耗尽层没有内部电场集中的曲面。因此，通过证明终端区域，不需要采取措施使耗尽层在水平方向上扩展。由于不需要端子区域，因此可以减小芯片尺寸。或者，可以扩展元件区域的区域。

52. 发明申请

US20080237807A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080237807A1
公开(公告)日：2008-10-02
申请号：US12055498
申请日：2008-03-26
申请人： Seiji MIYOSHI , Tetsuya Okada
发明人： Seiji MIYOSHI , Tetsuya Okada
IPC分类号： H01L29/40
CPC分类号： H01L29/861 , H01L29/0692 , H01L29/417 , H01L29/8611
摘要： A second electrode is selectively brought into contact with a semiconductor substrate. Specifically, an insulating film having opening portions is provided on the second principal surface of the semiconductor substrate, and the second electrode is provided on the insulating film. The second electrode comes into contact with the second principal surface of the semiconductor substrate through the opening portions. The total area of the opening portions is approximately the half of the total area of the second principal surface of the semiconductor substrate. Consequently, minority carriers (holes) are prevented by the insulating film from being drawn out, and thus, the loss of the minority carriers around the second electrode is decreased. Accordingly, the conductivity modulation effect is improved. Therefore, the forward voltage can be decreased even with a structure in which the impurity concentration of a p type impurity region is decreased in order to shorten a reverse recover time.
摘要翻译：选择性地使第二电极与半导体衬底接触。具体地，在半导体衬底的第二主表面上设置具有开口部分的绝缘膜，并且第二电极设置在绝缘膜上。第二电极通过开口部分与半导体衬底的第二主表面接触。开口部分的总面积大约是半导体衬底的第二主表面的总面积的一半。因此，通过绝缘膜被拉出来防止少数载流子（空穴），从而减少了第二电极周围的少数载流子的损失。因此，改善了电导率调制效果。因此，为了缩短反向恢复时间，即使降低p型杂质区域的杂质浓度的结构，也能够降低正向电压。

53. 发明授权

US07399999B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07399999B2
公开(公告)日：2008-07-15
申请号：US10958640
申请日：2004-10-06
申请人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
发明人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
IPC分类号： H01L29/06
CPC分类号： H01L29/7397 , H01L29/0619
摘要： In a conventional semiconductor device, there was a problem that, in a guard ring region, a shape of a depletion layer is distorted and stable withstand voltage characteristics cannot be obtained. In a semiconductor device of the present invention, a thermal oxide film in an actual operation region and a thermal oxide film in a guard ring region are formed in the same process. Thereafter, the thermal oxide film is once removed and is formed again. Thus, a film thickness of the thermal oxide film on the upper surface of the guard ring region is set to, for example, about 8000 to 10000 Å. Accordingly, a CVD oxide film including moving ions is formed in a position distant from a surface of an epitaxial layer. Consequently, distortion of a depletion layer, which is influenced by the moving ions, is suppressed and desired withstand voltage characteristics can be maintained.
摘要翻译：在传统的半导体器件中，存在在保护环区域中耗尽层的形状变形而不能得到稳定的耐电压特性的问题。在本发明的半导体装置中，以相同的工序形成实际工作区域中的热氧化膜和防护环区域的热氧化膜。此后，热氧化膜被一次除去并再次形成。因此，保护环区域的上表面上的热氧化膜的膜厚设定为例如约8000〜10000。因此，包含移动离子的CVD氧化膜形成在远离外延层的表面的位置。因此，受到移动离子影响的耗尽层的失真被抑制，并且可以保持期望的耐受电压特性。

54. 发明授权

US07034376B2 Schottky barrier diode semiconductor device 有权
标题翻译：肖特基势垒二极管半导体器件
公开(公告)号：US07034376B2
公开(公告)日：2006-04-25
申请号：US10953073
申请日：2004-09-30
申请人： Tetsuya Okada , Hiroaki Saito
发明人： Tetsuya Okada , Hiroaki Saito
IPC分类号： H01L31/108
CPC分类号： H01L29/66143 , H01L29/861 , H01L29/872
摘要： A Schottky barrier diode in which a p+-type semiconductor layer is provided in an n−-type epitaxial layer can realize lowering the forward voltage VF without considering leak current IR. However, when compared with a normal Schottky barrier diode, the forward voltage VF is generally high. When a Schottky metal layer is suitably selected, although the forward voltage VF can be reduced, there is a limit in further reduction. On the other hand, when the resistivity of the n−-type semiconductor layer is reduced, although the forward voltage VF can be realized, there is a problem that breakdown voltage is deteriorated. In a semiconductor device of the invention, a second n−-type semiconductor layer having a low resistivity is laminated on a first n−-type semiconductor layer capable of securing a specified breakdown voltage. P+-type semiconductor regions are made to have depths equal to or slightly deeper than the second n−-type semiconductor layer. By this, in a Schottky barrier diode in which leak current IR can be suppressed by pinch off of a depletion layer, the forward voltage VF can be reduced and the specified breakdown voltage can be secured.
摘要翻译：其中p型+型半导体层设置在n +型超导外延层中的肖特基势垒二极管可以在不考虑漏电流IR的情况下实现降低正向电压VF。然而，当与正常肖特基势垒二极管相比时，正向电压VF通常较高。当适当地选择肖特基金属层时，尽管可以减小正向电压VF，但是进一步减少是有限制的。另一方面，当降低n +型半导体层的电阻率时，尽管可以实现正向电压VF，但存在击穿电压恶化的问题。在本发明的半导体器件中，具有低电阻率的第二n + O - 型半导体层被层叠在第一n + 击穿电压。使P + + H型半导体区域的深度等于或略深于第二n +型半导体层。由此，在可以通过耗尽层的夹断来抑制漏电流IR的肖特基势垒二极管中，可以减小正向电压VF，并且可以确保规定的击穿电压。

55. 发明申请

US20050116283A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20050116283A1
公开(公告)日：2005-06-02
申请号：US10968354
申请日：2004-10-20
申请人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
发明人： Tetsuya Yoshida , Tetsuya Okada , Hiroaki Saito , Shigeyuki Murai , Kikuo Okada
IPC分类号： H01L21/28 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/76 , H01L29/78 , H01L29/80
CPC分类号： H01L29/7828 , H01L29/41741 , H01L29/4236 , H01L29/4238 , H01L29/4916
摘要： In conventional semiconductor devices, there observed a problem that cells on the devices may not function uniformly because of voltage drop in a main wiring layer due to a uniform and narrow width of the main wiring layer through which a main current flows. In a semiconductor device of the present invention, a width of one end of a main wire for carrying the main current is formed wider than a width of another end of the main wire. An overall width of the main wire is formed so as to be gradually narrowed from the one end to the another end. In this way, it is possible to reduce a difference in drive voltages between a cell located in the vicinity of an electrode pad for carrying the main current and a cell located in a remote position. Resultantly, it is possible to suppress a voltage drop in the main wire and to achieve uniform operations of cells in an element.
摘要翻译：在传统的半导体器件中，由于主电流流过的主布线层的宽度均匀而窄，主要布线层中的电压下降，存在器件的电池不能均匀地发挥作用的问题。在本发明的半导体器件中，用于承载主电流的主线的一端的宽度形成为比主线的另一端的宽度宽。主线的总宽度形成为从一端到另一端逐渐变窄。以这种方式，可以减小位于用于承载主电流的电极焊盘附近的电池与位于远程位置的电池之间的驱动电压的差异。因此，可以抑制主线中的电压降，并实现元件中的电池的均匀操作。

56. 发明授权

US06809354B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06809354B2
公开(公告)日：2004-10-26
申请号：US10460666
申请日：2003-06-13
申请人： Tetsuya Okada , Mitsuhiro Yoshimura , Tetsuya Yoshida
发明人： Tetsuya Okada , Mitsuhiro Yoshimura , Tetsuya Yoshida
IPC分类号： H01L2976
CPC分类号： H01L29/739 , H01L29/7827
摘要： In a semiconductor device, a variable-potential insulated electrode and a gate region are kept at the same potential through an aluminum layer. This device is mainly used as a voltage-driving type semiconductor device. By varying the voltage applied to the variable-potential insulated electrode through a gate electrode, a conductive path is formed in a channel region to switch on the device. The channel region turns into an N-type region when a positive potential is applied to the gate electrode, and turns into a pseudo P-type region when a ground potential or negative potential is applied to the gate electrode.
摘要翻译：在半导体器件中，可变电位绝缘电极和栅极区域通过铝层保持在相同的电位。该器件主要用作电压驱动型半导体器件。通过改变通过栅电极施加到可变电位绝缘电极的电压，在通道区域中形成导电路径以便接通器件。当向栅电极施加正电位时，沟道区变为N型区，当对栅电极施加接地电位或负电位时，沟道区变为伪P型区。

57. 发明授权

US06441587B2 Method to determine capacity of a battery 有权
标题翻译：确定电池容量的方法
公开(公告)号：US06441587B2
公开(公告)日：2002-08-27
申请号：US09820192
申请日：2001-03-29
申请人： Tetsuya Okada , Katsuhiro Suzuki , Toshitake Kurihara
发明人： Tetsuya Okada , Katsuhiro Suzuki , Toshitake Kurihara
IPC分类号： H02J700
CPC分类号： G01R31/361 , H02J7/0047 , H02J2007/005
摘要： This method to determine capacity of a battery computes capacity in current value and then converts it into capacity in power value, or computes capacity in power value and then converts it into current value. This method to determine capacity of a battery detects either discharge current or charge current or both, and computes capacity of battery in current value, which is then converted into capacity in power value by way of multiplication by the correcting constant which varies in accordance with capacity in current value. This method to determine capacity of a battery detects battery voltage or detects either discharge current or charge current or both of the battery, then computes battery capacity in power value, and converts capacity in power value so computed into capacity in current value by way of multiplication by the correcting constant which varies in accordance with capacity in power value.
摘要翻译：这种确定电池容量的方法计算当前值的容量，然后将其转换为功率值的容量，或计算功率值的容量，然后将其转换为当前值。用于确定电池容量的这种方法检测放电电流或充电电流或两者，并且计算当前值的电池容量，然后通过乘以根据容量变化的校正常数乘以功率值的功率值在当前价值。这种确定电池容量的方法检测电池电压或检测放电电流或充电电流或两者电池，然后计算功率值中的电池容量，并将所计算的功率值中的容量转换为当前值的容量乘以乘法通过根据功率值的容量而变化的校正常数。

58. 发明授权

US5949217A Method to determine remaining capacity of a rechargeable battery 失效
标题翻译：确定可充电电池剩余容量的方法
公开(公告)号：US5949217A
公开(公告)日：1999-09-07
申请号：US15621
申请日：1998-01-29
申请人： Tetsuya Okada , Takahiro Yamashita
发明人： Tetsuya Okada , Takahiro Yamashita
IPC分类号： G01R31/36 , H01M10/44
CPC分类号： H01M10/44 , G01R31/3655 , G01R31/3624 , G01R31/3675 , Y10S320/21
摘要： This method to determine remaining capacity of a rechargeable battery calculates remaining battery capacity by subtracting discharge capacity, computed by integrating battery discharge current, from charge capacity. Voltage of the discharging rechargeable battery is measured, and when battery voltage reaches a first voltage and a lower second voltage, the computed remaining battery capacity is corrected according to a previously established first remaining battery capacity and second remaining battery capacity corresponding to those voltages. The difference between calculated remaining battery capacity or discharge capacity at the first and second voltages is compared to the difference between the previously established first and second remaining battery capacity values, and the first voltage is modified to make those two differences equal.
摘要翻译：用于确定可再充电电池的剩余容量的方法通过从充电容量中减去通过积分电池放电电流计算的放电容量来计算剩余电池容量。测量放电可再充电电池的电压，并且当电池电压达到第一电压和较低的第二电压时，根据先前建立的第一剩余电池容量和对应于那些电压的第二剩余电池容量来校正所计算的剩余电池容量。将计算出的第一和第二电压的剩余电池容量或放电容量之间的差与先前建立的第一和第二剩余电池容量值之差进行比较，并修改第一电压以使这两个差异相等。

59. 发明授权

US5627452A Charging method of secondary battery 失效
标题翻译：二次电池充电方法
公开(公告)号：US5627452A
公开(公告)日：1997-05-06
申请号：US534789
申请日：1995-09-27
申请人： Tetsuya Okada
发明人： Tetsuya Okada
IPC分类号： H02J7/10 , H02J7/00
CPC分类号： H02J7/008 , Y02B40/90 , Y02E70/40
摘要： A charging apparatus is provided which determines whether a preliminary full charge indication such as a peak of the terminal voltage or a decrease of a predetermined voltage .DELTA.V after the peak indicates a true full charge level. In accordance with the present invention, when the charging apparatus detects a peak or a decrease of a predetermined voltage .DELTA.V after the peak in the terminal voltage, the apparatus can determine whether or not the detection indicates a true full charge level by taking into account the charging amount from the start of charging until the detection of the peak or the decrease.
摘要翻译：提供了一种充电装置，其确定诸如端子电压的峰值或峰值之后的预定电压DELTA V的初始满充电指示是否表示真正的完全充电水平。根据本发明，当充电装置在终端电压峰值之后检测到预定电压DELTA V的峰值或降低时，该装置可以通过考虑到该检测是否指示真正的完全充电电平来确定从充电开始到检测到峰值或减少的充电量。

60. 发明授权

US09263776B2 Battery system and energy storage system including the same 有权
标题翻译：电池系统和储能系统包括相同的
公开(公告)号：US09263776B2
公开(公告)日：2016-02-16
申请号：US13243234
申请日：2011-09-23
申请人： Han-Seok Yun , Tetsuya Okada , Jong-Woon Yang , Eui-Jeong Hwang
发明人： Han-Seok Yun , Tetsuya Okada , Jong-Woon Yang , Eui-Jeong Hwang
IPC分类号： H02J7/00 , H01M10/44 , H01M10/48 , H01M10/42
CPC分类号： H01M10/441 , H01M10/482 , H01M2010/4271 , H02J7/0021 , H04Q9/00 , H04Q2209/10 , H04Q2209/30 , Y02T10/7055
摘要： A battery system having components with reduced maximum voltage tolerance requirements is disclosed. The battery system includes a battery pack with battery modules, and measuring units, which are connected to the battery modules. The measuring units have first analog front ends (AFEs) for monitoring the at least two battery modules. Each first AFE is configured to transmit information related to the monitored characteristic via an isolator to a processor configured to control the battery pack based on the transmitted information. The isolator receives the transmitted information from an AFE which is not connected to the battery module having the least electric potential or to the battery module having the greatest electric potential.
摘要翻译：公开了具有降低的最大电压公差要求降低的部件的电池系统。电池系统包括具有电池模块的电池组和连接到电池模块的测量单元。测量单元具有用于监视至少两个电池模块的第一模拟前端（AFE）。每个第一AFE被配置为经由隔离器将与所监视的特性相关的信息发送到被配置为基于所发送的信息来控制电池组的处理器。隔离器从不与具有最小电位的电池模块连接的AFE或具有最大电位的电池模块接收从AFE发送的信息。

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