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41. 发明授权

US5997700A Method of fabricating magnetic head slider 失效
标题翻译：制造磁头滑块的方法
公开(公告)号：US5997700A
公开(公告)日：1999-12-07
申请号：US849530
申请日：1997-06-20
申请人： Nobuto Fukushima , Yasuhiro Horiike
发明人： Nobuto Fukushima , Yasuhiro Horiike
IPC分类号： C04B41/53 , C04B41/91 , G11B5/10 , G11B5/60 , C23C14/00 , B44C1/22
CPC分类号： C04B41/009 , C04B41/5346 , C04B41/91 , G11B5/10 , G11B5/102 , G11B5/60 , G11B5/6005
摘要： A mask (2) having a predetermined pattern formed on a work surface of amagnetic head slider substrate (1) containing aluminum oxide and titanium carbide as main constituents. The magnetic head slider substrate (1) with the mask (2) formed thereon as set on an electrode disposed inside an etching apparatus. While a reactive gas an insert gas are introduced into an excitation chamber (14) of the etching apparatus to cause plasma excitation of said gases to occur, a radio frequency power is applied to the electrode. Hereupon, reactive gas ions (4) and inert gas ions (5) that are generated by the plasma excitation are drawn to the magnetic head slider substrate (1), causing reactive etching by the reactive gas ions (4) and sputter-etching by the inert gas ions (5) to proceed concurrently.
摘要翻译： PCT No.PCT / JP95 / 02583 Sec。 371日期：1997年6月20日 102（e）日期1996年6月20日PCT 1995年12月15日PCT PCT。出版物WO96 / 19800 日期1996年6月27日具有形成在以氧化铝和碳化钛为主要成分的磁头滑块基板（1）的工作面上形成的规定图案的掩模（2）。具有掩模（2）的磁头滑动器基板（1）设置在设置在蚀刻装置内部的电极上。当反应性气体将插入气体引入到蚀刻装置的激励室（14）中以引起所述气体的等离子体激发时，向电极施加射频功率。因此，通过等离子体激发产生的反应气体离子（4）和惰性气体离子（5）被吸引到磁头滑块基板（1），由反应气体离子（4）进行反应蚀刻，并通过惰性气体离子（5）同时进行。

42. 发明授权

US5858181A Physical vapor deposition of titanium nitride on a nonconductive substrate 失效
标题翻译：氮化钛在非导电衬底上的物理气相沉积
公开(公告)号：US5858181A
公开(公告)日：1999-01-12
申请号：US112013
申请日：1993-08-25
申请人： Prem C. Jindal , Dennis T. Quinto
发明人： Prem C. Jindal , Dennis T. Quinto
IPC分类号： C04B35/80 , C04B41/52 , C04B41/53 , C04B41/89 , C04B41/91 , C23C14/02 , C23C14/06 , C23C14/18 , C23C14/34
CPC分类号： C04B41/009 , C04B35/803 , C04B41/52 , C04B41/5346 , C04B41/89 , C04B41/91 , C23C14/022 , C23C14/025 , C23C14/0641 , C23C14/18 , Y10T407/27 , Y10T428/265
摘要： A process for physical vapor deposition of a refractory coating such as titanium nitride on a nonconductive substrate such as a ceramic substrate and the coated substrate produced thereby. The nonconductive substrate is coated by cleaning the nonconductive substrate surfaces and then depositing a first layer of a refractory metal such as titanium metal on the nonconductive substrate by physical vapor deposition. A second layer of a refractory compound such as titanium nitride is then deposited on the first layer by physical vapor deposition to produce a coated nonconductive substrate having enhanced coating adhesion.
摘要翻译：将诸如氮化钛的耐火涂层物理气相沉积在诸如陶瓷基底的非导电基底上的方法以及由此产生的涂覆基底。通过清洁非导电基底表面并然后通过物理气相沉积在非导电基底上沉积诸如钛金属的难熔金属的第一层来涂覆非导电基底。然后通过物理气相沉积将第二层难熔化合物如氮化钛沉积在第一层上，以产生具有增强的涂层粘附性的涂覆的非导电基材。

43. 发明授权

US5821170A Method for etching an insulating material 失效
标题翻译：蚀刻绝缘材料的方法
公开(公告)号：US5821170A
公开(公告)日：1998-10-13
申请号：US720511
申请日：1996-09-30
申请人： Lawrence S. Klingbeil, Jr. , Terry K. Daly
发明人： Lawrence S. Klingbeil, Jr. , Terry K. Daly
IPC分类号： C04B41/53 , C04B41/91 , H01L21/311 , C23F1/00
CPC分类号： C04B41/009 , C04B41/5353 , C04B41/91 , H01L21/31111 , C04B2111/00844
摘要： A method for etching aluminum containing layers. A layer (13) of aluminum nitride is formed on a semiconductor substrate (11). The layer (13) of aluminum nitride is etched using a dilute ammonium hydroxide solution that is diluted with water such that the ammonium hydroxide solution has one part of ammonium hydroxide to at least fifteen parts of water. The dilute ammonium hydroxide solution is showered onto the semiconductor substrate and forms an aluminum hydroxide layer. The aluminum hydroxide layer is dissolved by excess water in the dilute aluminum hydroxide solution and rinsed from the semiconductor substrate (11).
摘要翻译：一种蚀刻含铝层的方法。在半导体衬底（11）上形成氮化铝层（13）。使用稀氢氧化铵溶液蚀刻氮化铝层（13），该溶液用水稀释使得氢氧化铵溶液具有一部分氢氧化铵至至少十五份水。将稀氢氧化铵溶液喷淋到半导体衬底上并形成氢氧化铝层。氢氧化铝层通过过量的水溶解在稀氢氧化铝溶液中并从半导体衬底（11）中冲洗掉。

44. 发明授权

US5820770A Thin film magnetic head including vias formed in alumina layer and process for making the same 失效
标题翻译：薄膜磁头包括在氧化铝层中形成的通孔及其制造方法
公开(公告)号：US5820770A
公开(公告)日：1998-10-13
申请号：US502442
申请日：1995-07-13
申请人： Uri Cohen , Gene Patrick Bonnie
发明人： Uri Cohen , Gene Patrick Bonnie
IPC分类号： C04B41/53 , C04B41/91 , G11B5/31 , G11B5/39 , G11B5/40 , G11B19/04 , H01L21/00 , H01L21/306 , H01L21/3213 , H01L43/12 , H05K3/06 , B44C1/22
CPC分类号： C04B41/009 , C04B41/5353 , C04B41/91 , G11B5/3103 , G11B5/3106 , G11B5/313 , G11B5/3133 , G11B5/3163 , G11B5/40 , H01L21/00 , C04B2111/00422 , G11B19/04 , G11B5/3143 , H01L2924/0002 , Y10T29/49046
摘要： A method for pattern-etching thick alumina layers in the manufacture of thin film heads (TFH) by using compatible metallic mask layers and a wet chemical etchant. The deep alumina etching facilitates a studless TFH device where the coil and bonding pads are deposited and patterned simultaneously, and vias are later etched through the alumina overcoat layer to expose the bonding pads. The method also enables the etching of scribe-line grooves of street and alleys across the wafer for sawing and machining of sliders. These grooves eliminate most alumina chipping due to stress and damage introduced by the sawing and machining operations. Similarly, pattern-etching of the alumina undercoat facilitates the formation of precise craters for recessed structures. These can improve planarity and alleviate problems related to adverse topography and elevated features of TFH devices.
摘要翻译：通过使用相容的金属掩模层和湿化学蚀刻剂制造薄膜头（TFH）时的图案蚀刻厚氧化铝层的方法。深氧化铝蚀刻有助于无螺纹TFH装置，其中线圈和焊盘被同时沉积和图案，并且通孔随后通过氧化铝外涂层蚀刻以暴露接合焊盘。该方法还可以蚀刻跨越晶片的街道和小路的划线槽，用于锯切和加工滑块。这些槽由于锯切和加工操作引起的应力和损坏而消除了大多数氧化铝碎屑。类似地，氧化铝底涂层的图案蚀刻便于形成用于凹陷结构的精确凹坑。这些可以改善平面性，并减轻与不利地形相关的问题和TFH设备的高架特征。

45. 发明授权

US5700381A Method for manufacturing thin film magnetic head 失效
标题翻译：制造薄膜磁头的方法
公开(公告)号：US5700381A
公开(公告)日：1997-12-23
申请号：US526498
申请日：1995-09-07
申请人： Fujimi Kimura , Toyoaki Tanaka , Akihiko Dobashi , Takashi Abe
发明人： Fujimi Kimura , Toyoaki Tanaka , Akihiko Dobashi , Takashi Abe
IPC分类号： C04B41/45 , C04B41/53 , C04B41/81 , C04B41/91 , G11B5/31 , B44C1/22
CPC分类号： C04B41/009 , C04B41/4592 , C04B41/5353 , C04B41/81 , C04B41/91 , G11B5/3163 , C04B2111/00422
摘要： After applying a metal film on a surface of a substrate, the metal film is patterned in such a manner that the surface of the substrate is exposed in a pattern that corresponds to the pattern of the required indented portion. Then, the substrate is immersed in an etchant which etches the substrate selectively to form the indented portion in the surface of the substrate using the metal film as a mask. The method makes it possible to define the depth and the pattern of an indented portion where a magnetic transducer is provided with a high degree of accuracy, to prevent a reduction in pattern accuracy due to re-adhering and to advance industrial productivity.
摘要翻译：在基板的表面上施加金属膜之后，以使得基板的表面以对应于所需凹入部分的图案的图案曝光的方式对金属膜进行图案化。然后，将衬底浸入蚀刻剂中，该蚀刻剂选择性地蚀刻衬底，以使用金属膜作为掩模在衬底的表面中形成凹陷部分。该方法能够以高精度定义设置有磁换能器的凹入部分的深度和图案，以防止由于再附着而导致的图案精度降低，并提高工业生产率。

46. 发明授权

US5686365A Method for dissolution and stabilization of silica-rich fibers 失效
标题翻译：二氧化硅富集纤维的溶解和稳定化方法
公开(公告)号：US5686365A
公开(公告)日：1997-11-11
申请号：US821653
申请日：1992-01-16
申请人： Carol M. Jantzen
发明人： Carol M. Jantzen
IPC分类号： A62D3/00 , A62D3/36 , A62D101/41 , B09B3/00 , C03C25/66 , C04B41/53
CPC分类号： A62D3/36 , B09B3/0066 , C03C25/66 , A62D2101/41 , A62D2203/02 , Y10S65/901
摘要： A method for dissolving silica-rich fibers such as borosilicate fibers, fiberglass and asbestos to stabilize them for disposal. The method comprises (1) immersing the fibers in hot, five-weight-percent sodium hydroxide solution until the concentration of dissolved silica reaches equilibrium and a only a residue is left (about 48 hours), then immersing the residue in hot, five-weight-percent nitric acid until the residue dissolves (about 96 hours). After adjusting the pH of the dissolved fibers to be caustic, the solution can then be added to a waste vitrification stream for safe disposal. The method is useful in disposing contaminated HEME and HEPA filters.
摘要翻译：一种溶解二氧化硅的纤维如硼硅酸盐纤维，玻璃纤维和石棉以稳定处理的方法。该方法包括（1）将纤维浸入热的5重量％的氢氧化钠溶液中，直到溶解的二氧化硅浓度达到平衡，剩下仅剩下一个残留物（约48小时），然后将残留物浸入热，重量百分比的硝酸直到残留物溶解（约96小时）。在将溶解的纤维的pH调节为苛性碱后，然后将溶液加入到废玻璃化流中以便安全处理。该方法可用于处理受污染的HEME和HEPA过滤器。

47. 发明授权

US5677014A Process for film formation 失效
标题翻译：成膜方法
公开(公告)号：US5677014A
公开(公告)日：1997-10-14
申请号：US687933
申请日：1996-07-29
申请人： Takao Ohnishi , Natsumi Shimogawa , Yukihisa Takeuchi , Nobuo Takahashi
发明人： Takao Ohnishi , Natsumi Shimogawa , Yukihisa Takeuchi , Nobuo Takahashi
IPC分类号： B23K26/351 , B23K26/361 , C04B41/00 , C04B41/53 , C04B41/80 , C04B41/91 , H01C17/242 , H01L41/22 , H05K1/03 , H05K1/16 , H05K3/00 , H05K3/02 , H05K3/08 , B05D3/00
CPC分类号： C04B41/009 , C04B41/0036 , C04B41/5346 , C04B41/80 , C04B41/91 , H05K1/0306 , H05K3/027
摘要： A process for forming a film on a ceramic substrate or on a fired film formed thereon includes coating, on a ceramic substrate or on a fired film formed thereon, a material which becomes a metallic film or a ceramic film upon firing, to form an as-coated film, irradiating the as-coated film with an energy beam which does not damage the ceramic substrate or the fired film formed thereon to such an extent that it becomes useless and which can decompose and remove the as-coated film, to trim the unrequired portion(s) of the as-coated film, and firing the trimmed as-coated film to form a desired film. The film can be formed on a ceramic substrate or on a fired film formed thereon while the damage to the substrate or the fired film is minimized.
摘要翻译：在陶瓷基板或其上形成的烧成膜上形成膜的方法包括在陶瓷基板上或其上形成的烧成膜上涂覆在烧制时成为金属膜或陶瓷膜的材料，形成为涂覆膜，用不会损坏陶瓷基板或其上形成的烧成膜的能量束照射到被涂膜，使得其变得无用并且可以分解和去除涂覆膜，从而修整涂覆膜的不需要部分，并且烧制经修整的被涂膜以形成所需的膜。该膜可以形成在陶瓷基板上或形成在其上的烧结膜上，同时对基板或烧制膜的损坏最小化。

48. 发明授权

US5657192A Thin film magnetic head including crater for recessed structure and process for making the same 失效
标题翻译：薄膜磁头包括凹陷结构的凹坑和制造相同的工艺
公开(公告)号：US5657192A
公开(公告)日：1997-08-12
申请号：US466514
申请日：1995-06-05
申请人： Uri Cohen , Gene Patrick Bonnie
发明人： Uri Cohen , Gene Patrick Bonnie
IPC分类号： C23F1/44 , C04B41/53 , C04B41/91 , C23F4/00 , G11B5/31 , G11B5/40 , G11B19/04 , H01L43/08 , H01L43/12 , B44C1/22 , C23F1/00
CPC分类号： C04B41/5353 , C04B41/91 , G11B5/3103 , G11B5/3106 , G11B5/313 , G11B5/3133 , G11B5/3163 , G11B5/40 , G11B19/04 , G11B5/3143 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046 , Y10T29/49064
摘要： A method for pattern-etching thick alumina layers in the manufacture of thin film heads (TFH) by using compatible metallic mask layers and an alumina etchant. The deep alumina etching facilitates the formation of precise craters for recessed structures. These can improve planarity and alleviate problems related to adverse topography and elevated features of TFH devices.
摘要翻译：通过使用相容的金属掩模层和氧化铝蚀刻剂在薄膜头（TFH）的制造中图案蚀刻厚氧化铝层的方法。深氧化铝蚀刻有助于形成用于凹陷结构的精确凹坑。这些可以改善平面性，并减轻与不利地形相关的问题，并提高TFH设备的特征。

49. 发明授权

US5413678A Heated SC1 solution for selective etching 失效
标题翻译：加热SC1溶液进行选择性蚀刻
公开(公告)号：US5413678A
公开(公告)日：1995-05-09
申请号：US61787
申请日：1993-05-14
申请人： Sylvia Hossain
发明人： Sylvia Hossain
IPC分类号： C03C15/00 , C04B41/53 , H01L21/311 , B05D5/00
CPC分类号： C03C15/00 , C04B41/5353 , H01L21/31111
摘要： NH.sub.4 OH:H.sub.2 O.sub.2 :H.sub.2 O solution is used for selective wet etching of different films such as TEOS oxide, borophosphosilicate glass (BPGS), nitride, doped polysilicon, and thermal oxide.
摘要翻译： NH 4 OH：H 2 O 2 :H 2 O溶液用于选择性湿蚀刻不同的膜，例如TEOS氧化物，硼磷硅酸盐玻璃（BPGS），氮化物，掺杂多晶硅和热氧化物。

50. 发明授权

US5393377A Method of etching stone materials 失效
标题翻译：石材蚀刻方法
公开(公告)号：US5393377A
公开(公告)日：1995-02-28
申请号：US192221
申请日：1994-02-03
申请人： Ricardo Pasaran Sayago , Benigno Pasaran Sayago
发明人： Ricardo Pasaran Sayago , Benigno Pasaran Sayago
IPC分类号： B44C1/22 , C04B41/53
CPC分类号： C04B41/009 , B44C1/227 , C04B41/5353
摘要： The present invention relates to an improved method of engraving stone which comprises the steps of; applying to a stone material an acid resistant polymer or lacquer coating upon portions of said stone material that are not to be engraved; bathing the coated stone material with a sufficient amount of acid for a sufficient period of time to engrave said stone material; washing the stone material with a sufficient amount of base to neutralize the acid; and, removing the coating to obtain an engraved stone material.In particular the present invention relates to methods of engraving marble or onyx using nitric acid, hydrochloric acid or hydrofluoric acids.
摘要翻译：本发明涉及一种雕刻石雕的改进方法，包括以下步骤：在所述石材的不被雕刻的部分上向石材施加耐酸性聚合物或漆涂层; 用足够量的酸洗足量的涂层石材足够的时间来雕刻所述石材; 用足量的碱洗涤石料以中和酸; 并除去涂层以获得雕刻的石材。特别地，本发明涉及使用硝酸，盐酸或氢氟酸雕刻大理石或玛瑙的方法。

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