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41. 发明申请

US20030073104A1 Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus 审中-公开
标题翻译：使用遗传工程中尺度病毒的混合材料的纳米级排序
公开(公告)号：US20030073104A1
公开(公告)日：2003-04-17
申请号：US10157775
申请日：2002-05-29
发明人： Angela M. Belcher , Seung-Wuk Lee
IPC分类号： C12Q001/68 , G01N033/53 , G01N033/543 , H01L021/00
CPC分类号： H01L29/045 , B82Y5/00 , B82Y10/00 , B82Y15/00 , B82Y30/00 , C30B7/00 , C30B7/005 , C30B29/58 , G01N33/588 , H01L21/02 , H01L51/0012 , H01L51/0093 , Y10T428/31504
摘要： The present invention includes methods for producing nanocrystals of semiconductor material that have specific crystallographic features such as phase and alignment by using a self-assembling biological molecule that has been modified to possess an amino acid oligomer that is capable of specific binding to semi-conductor material. One form of the present invention is a method to construct ordered nanoparticles within the liquid crystal of the self-assembling biological molecule.
摘要翻译：本发明包括通过使用已经被修饰为具有能够特异性结合半导体材料的氨基酸低聚物的自组装生物分子来制备具有特定结晶特征如相位和对准的半导体材料的方法。本发明的一种形式是在自组装生物分子的液晶内构建有序纳米颗粒的方法。

42. 发明授权

US06537830B1 Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material 失效
标题翻译：制造具有多晶结晶取向铁电材料的铁电FET的方法
公开(公告)号：US06537830B1
公开(公告)日：2003-03-25
申请号：US09533204
申请日：2000-03-23
申请人： Koji Arita , Carlos A. Paz de Araujo , Larry D. McMillan , Masamichi Azuma
发明人： Koji Arita , Carlos A. Paz de Araujo , Larry D. McMillan , Masamichi Azuma
IPC分类号： H01L2100
CPC分类号： C23C16/4558 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1279 , C23C18/1283 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A nondestructive read-out, nonvolatile ferroelectric field effect transistor (“FET”) memory in an integrated circuit, containing a thin film of polycrystalline crystallographically oriented ferroelectric material. Preferably, the material is polycrystalline c-axis oriented layered superlattice material. More preferably, it is c-axis oriented strontium bismuth tantalate or strontium bismuth tantalum niobate.
摘要翻译：集成电路中的非破坏性读出非易失性铁电场效应晶体管（“FET”）存储器，其包含多晶结晶取向铁电材料的薄膜。优选地，材料是多晶c轴取向层状超晶格材料。更优选的是c轴取向的钽酸铋铋或铌酸铋钽铌酸盐。

43. 发明申请

US20030021982A1 Preparation of graded semiconductor films by the layer-by-layer assembly of nanoparticles 审中-公开
标题翻译：通过纳米颗粒的逐层组装制备渐变半导体膜
公开(公告)号：US20030021982A1
公开(公告)日：2003-01-30
申请号：US10179999
申请日：2002-06-25
发明人： Nicholas A. Kotov
IPC分类号： B32B015/04
CPC分类号： C30B7/005 , C30B7/00 , C30B29/605 , H01L21/02422 , H01L21/02562 , H01L21/02601 , H01L21/02628 , H01L33/08 , H01L33/18 , Y10T428/12667 , Y10T428/25 , Y10T428/256 , Y10T428/259
摘要： This invention relates to the layer-by-layer assembly of graded semiconducting films by laying nanoparticles on a substrate in a sequence from smaller to larger sizes, which can be done economically and effectively. Layer-by-layer assembly (LBL) enables effective processing of semiconductor, metal, or metal oxide nanoparticle dispersions into functional advanced materials, which retain distinctive optical, magnetic and electrical qualities of size-quantized state of matter.
摘要翻译：本发明涉及通过从小到大的顺序将衬底上的纳米颗粒铺设在衬底上来逐级组装梯度半导体膜，这可以经济有效地进行。逐层组装（LBL）可以将半导体，金属或金属氧化物纳米颗粒分散体有效地加工成功能先进的材料，保留大小量化物质状态的独特的光学，磁性和电学质量。

44. 发明申请

US20030012984A1 Buffer layer and growth method for subsequent epitaxial growth of III-V nitride semiconductors 审中-公开
标题翻译：用于III-V族氮化物半导体后续外延生长的缓冲层和生长方法
公开(公告)号：US20030012984A1
公开(公告)日：2003-01-16
申请号：US09904129
申请日：2001-07-11
发明人： Tetsuzo Ueda
IPC分类号： B32B009/00 , C30B023/02
CPC分类号： H01L21/0262 , C30B7/005 , C30B25/18 , C30B29/40 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02447 , H01L21/02458 , H01L21/02472 , H01L21/02502 , H01L21/0254 , H01L21/02623
摘要： An improved epitaxial wafer and growth method of III-V nitrides (III-V compound semiconductor which contains nitrogen as a group-V element, written as InGaAlBNAsP alloy, typically GaN, AlN, InN, or ternary alloy system of two of the three) on large diameter substrates with flat surfaces and better crystal quality is provided. A III-V nitrides alloy thin film is formed by spin-coating on substrates. Liquid containing group III elements and nitrogen is spread on substrates. Then the substrate is coated with thin film from the liquid by spinning it at certain rotation speeds. The film and substrate is annealed to crystallize the spin-coated film in a gas atmosphere, where the gas atmosphere includes a gas, where the gas includes nitrogen as an element. This film is used as a buffer layer for subsequent epitaxial growth of large area III-V nitrides to obtain flat surfaces together with good crystal quality and uniformity. Oxide buffer layer such as zinc oxide, magnesium oxide, aluminum oxide is also spin-coated and annealed in a gas atmosphere in which a gas contains oxygen as an clement. III-V Nitride is overgrown on the crystallized oxide buffer layer.
摘要翻译： III-V族氮化物的改进的外延晶片和生长方法（III-V族化合物半导体，其含有氮作为V族元素，被称为InGaAlBNAsP合金，典型地为GaN，AlN，InN或三种合金中的两种的三元合金系）在具有平坦表面的大直径基材和更好的晶体质量的情况下提供。通过在基板上旋涂形成III-V族氮化物合金薄膜。含有III族元素和氮的液体扩散在基材上。然后，通过在一定的转速下旋转基板，从液体中涂覆薄膜。对膜和衬底进行退火，以在气体气氛中气旋气氛中结晶旋涂，其中气体气体包括气体，其中气体包括氮作为元素。该膜用作缓冲层，用于随后的大面积III-V氮化物的外延生长，以获得平坦的表面以及良好的晶体质量和均匀性。氧化锌，氧化镁，氧化铝等氧化物缓冲层也在气体含有氧气的气体气氛中旋涂，退火。 III-V氮化物在结晶的氧化物缓冲层上长满。

45. 发明授权

US06454964B1 Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same 失效
标题翻译：金属聚氧烷基化前体溶液在辛烷溶剂中及其制备方法
公开(公告)号：US06454964B1
公开(公告)日：2002-09-24
申请号：US09718847
申请日：2000-11-22
申请人： Michael C. Scott , Carlos A. Paz De Araujo
发明人： Michael C. Scott , Carlos A. Paz De Araujo
IPC分类号： C09K300
CPC分类号： H01L27/11502 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C30B7/00 , C30B7/005 , C30B29/68 , H01C7/1013 , H01C7/112 , H01L21/31691 , H01L27/10805 , H01L28/55 , H01L28/56
摘要： A liquid precursor solution for use according to a method of manufacturing metal oxide electronic components includes a polyoxyalkylated metal complex dispersed in an alkane solvent. The alkane solvent is preferably n-octane.
摘要翻译：根据制造金属氧化物电子部件的方法使用的液体前体溶液包括分散在烷烃溶剂中的聚氧化烷基化金属络合物。烷烃溶剂优选为正辛烷。

46. 发明申请

US20010054728A1 Metal oxide integrated circuit on silicon germanium substrate 失效
标题翻译：硅锗基板上的金属氧化物集成电路
公开(公告)号：US20010054728A1
公开(公告)日：2001-12-27
申请号：US09906285
申请日：2001-07-16
申请人： Symetrix Corporation
发明人： Carlos A. Paz de Araujo , Masamichi Azuma , Larry D. McMillan , Koji Arita
IPC分类号： H01L021/8234 , H01L021/8244 , H01L027/108 , H01L029/76 , H01L029/94 , H01L031/119
CPC分类号： H01L21/02197 , C04B35/4682 , C04B35/6264 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1245 , C23C18/1275 , C23C18/1279 , C23C18/1283 , C23C18/14 , C30B7/00 , C30B7/005 , C30B29/68 , H01C7/1013 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02282 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/55 , H01L28/56 , H01L28/60 , H01L28/75
摘要： Integrated circuit capacitors in which the capacitor dielectric is a thin film of BST having a grain size smaller than 200 nanometers formed above a silicon germanium substrate. Typical grain sizes are 40 nm and less. The BST is formed by deposition of a liquid precursor by a spin-on process. The original liquid precursor includes an alkoxycarboxylate dissolved in 2-methoxyethanol and a xylene exchange is performed just prior to spinning. The precursor is dried in air at a temperature of about 400null C. and then furnace annealed in oxygen at a temperature of between 600null C. and 850null C.
摘要翻译：集成电路电容器，其中电容器电介质是在硅锗衬底上方形成的具有小于200纳米的晶粒尺寸的BST薄膜。典型的晶粒尺寸为40nm以下。 BST通过旋涂工艺沉积液体前体而形成。原始液体前体包括溶解在2-甲氧基乙醇中的烷氧基羧酸酯，并且在旋转之前进行二甲苯交换。前体在空气中在约400℃的温度下干燥，然后在600℃至850℃的温度下在氧气中进行炉退火。

47. 发明授权

US06245580B1 Low temperature process for fabricating layered superlattice materials and making electronic devices including same 有权
标题翻译：用于制造分层超晶格材料的低温工艺和制造包括它们的电子器件
公开(公告)号：US06245580B1
公开(公告)日：2001-06-12
申请号：US09228907
申请日：1999-01-11
申请人： Narayan Solayappan , Vikram Joshi , Carlos A. Paz de Araujo
发明人： Narayan Solayappan , Vikram Joshi , Carlos A. Paz de Araujo
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , C30B7/005 , H01L21/31691
摘要： A coating of liquid precursor containing a metal is applied to a first electrode, baked on a hot plate in oxygen ambient at a temperature not exceeding 300° C. for five minutes, then RTP annealed at 675° C. for 30 seconds. The coating is then annealed in oxygen or nitrogen ambient at 700° C. for one hour to form a thin film of layered superlattice material with a thickness not exceeding 100 nm. A second electrode is applied to form a capacitor, and a second anneal is performed in oxygen or nitrogen ambient at a temperature not exceeding 700° C. If the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8≦u≦1.0, 2.0≦v≦2.3, and 1.9≦w≦2.1.
摘要翻译：将包含金属的液体前体涂层施加到第一电极，在氧气环境中在不超过300℃的温度下在热板上烘烤5分钟，然后在675℃下RTP退火30秒。然后将涂层在氧气或氮气环境中在700℃下退火1小时，以形成厚度不超过100nm的层状超晶格材料的薄膜。施加第二电极以形成电容器，并且在氧气或氮气环境中在不超过700℃的温度下进行第二次退火。如果该材料是钽酸铋锶，则该前体含有痣相当于的锶，v摩尔铋的等价物和钽的摩尔当量，其中0.8 <= u <= 1.0,2.0 <= v <= 2.3和1.9 <= w <= 2.1。

48. 发明授权

US6159620A Single-electron solid state electronic device 失效
标题翻译：单电子固态电子器件
公开(公告)号：US6159620A
公开(公告)日：2000-12-12
申请号：US052235
申请日：1998-03-31
申请人： James R. Heath , Daniel V. Leff , Gil Markovich
发明人： James R. Heath , Daniel V. Leff , Gil Markovich
IPC分类号： C30B7/00 , H01L29/76 , H01L51/00 , B32B15/08
CPC分类号： B82Y10/00 , B82Y30/00 , C30B7/00 , C30B7/005 , C30B29/605 , G11C2216/08 , H01L29/7613 , H01L51/0595 , Y10S977/937 , Y10T428/12493 , Y10T428/12569
摘要： A single-electron solid state electronic device is characterized by organically functionalized nanometer size metal and metal alloy nanocrystal active elements. The electronic behavior of the device is distinguished by single electron charging phenomena, displaying characteristic Coulomb Blockade and Coulomb Staircase signatures.
摘要翻译：单电子固态电子器件的特征在于有机官能化的纳米尺寸金属和金属合金纳米晶体有源元件。该装置的电子行为由单电子充电现象区分，显示特征库仑封锁和库仑楼梯签名。

49. 发明授权

US5772755A Oriented crystalline materials 失效
标题翻译：定向结晶材料
公开(公告)号：US5772755A
公开(公告)日：1998-06-30
申请号：US690151
申请日：1996-08-01
申请人： Jack Hegenbarth , Diane R. Carpenter
发明人： Jack Hegenbarth , Diane R. Carpenter
IPC分类号： B29C55/00 , C30B7/00
CPC分类号： B29C55/00 , C30B29/58 , C30B7/00 , C30B7/005 , B29K2027/18 , Y10S117/919
摘要： Oriented materials are described in which particular crystalline materials are grown on a highly-oriented polytetrafluoroethylene substrate. Compositions are provided comprising a layer of aligned molecular chains of oriented polytetrafluoroethylene and an overlayer of a second polymer that imparts desired properties to the construction. A third layer of crystallizable, orientable material is then deposited on the overlayer. The third layer becomes oriented. The materials are useful as polarizers when the third layer is a polarizing dye.
摘要翻译：描述了定向材料，其中特定的结晶材料在高取向聚四氟乙烯基材上生长。提供了组合物，其包含取向的聚四氟乙烯的排列分子链的层和赋予所述结构所需性质的第二聚合物的覆盖层。然后将第三层可结晶的可取向材料沉积在覆盖层上。第三层变得朝向。当第三层是偏振染料时，这些材料可用作偏光器。

50. 发明授权

US5688565A Misted deposition method of fabricating layered superlattice materials 失效
标题翻译：分层超晶格材料的薄膜沉积方法
公开(公告)号：US5688565A
公开(公告)日：1997-11-18
申请号：US480477
申请日：1995-06-07
申请人： Larry D. McMillan , Carlos A. Paz de Araujo , Michael C. Scott
发明人： Larry D. McMillan , Carlos A. Paz de Araujo , Michael C. Scott
IPC分类号： C23C4/12 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H05K3/10 , B05D3/00
CPC分类号： C23C16/4558 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1287 , C23C18/14 , C23C4/123 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55 , H05K3/105
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as stroritium tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a potion of the layered superlattice material film in a component of the integrated circuit.
摘要翻译：制备在二甲苯/甲基乙基酮溶剂中包含多个金属2-乙基己酸酯如锶钽和2-乙基己酸铋的前体液体，将基底置于真空沉积室内，使前体液体雾化，并将雾流入沉积室，同时将室保持在环境温度，以将一层前体液体沉积在基底上。将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。然后完成集成电路，以在集成电路的部件中至少包含一层分层超晶格材料膜。

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