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1. 发明授权

US06867452B2 Interlayer oxide containing thin films for high dielectric constant application of the formula AB2O6 or AB2O7 失效
标题翻译：含有氧化物的薄膜用于高介电常数应用的AB2O6或AB2O7
公开(公告)号：US06867452B2
公开(公告)日：2005-03-15
申请号：US10278581
申请日：2002-10-23
申请人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L21/314 , H01L21/316 , H01L27/06 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/02197 , H01L21/02205 , H01L21/02282 , H01L21/02348 , H01L21/31691 , H01L27/0629
摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦y≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译：一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜。一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= y <= 1.0且0 <= Y＆LE; 1.0; （BAxSr1-x）2（TayNb1-y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; AND（BAxSr1-x）2Bi2（TayNb1-y）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。根据本发明的薄膜的相对介电常数> 40，优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

2. 发明授权

US06781184B2 Barrier layers for protecting metal oxides from hydrogen degradation 有权
标题翻译：用于保护金属氧化物免受氢降解的阻挡层
公开(公告)号：US06781184B2
公开(公告)日：2004-08-24
申请号：US09998469
申请日：2001-11-29
申请人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L27108
CPC分类号： H01L28/57 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.
摘要翻译：集成电路中的氢扩散阻挡层位于集成电路中以抑制氢扩散到诸如铁电层状超晶格材料的金属氧化物的薄膜。氢扩散阻挡层包括以下化合物中的至少一种：钽酸锶，钽酸铋，氧化钽，氧化钛，氧化锆和氧化铝。氢阻挡层是无定形的，并且在450℃或更低的温度下通过MOCVD工艺制成。在与所述氢扩散阻挡层相邻的地方形成包括选自氮化硅和所述氢阻挡层材料之一的结晶形式的材料的补充氢阻挡层。

3. 发明授权

US06541279B2 Method for forming an integrated circuit 有权
标题翻译：集成电路形成方法
公开(公告)号：US06541279B2
公开(公告)日：2003-04-01
申请号：US09798310
申请日：2001-03-02
申请人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L2100
CPC分类号： H01L21/02197 , H01L21/02205 , H01L21/02282 , H01L21/02348 , H01L21/31691 , H01L27/0629
摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNby−1)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译：一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜。一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= x <= 1.0且0 <= y <= 1.0; （BaxSr1-x）2（TayNb1-y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; 和（BaxSr1-x）2Bi2（TayNby-1）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。根据本发明的薄膜的相对介电常数> 40，优选约100.本发明金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

4. 发明授权

US07187079B2 Stacked memory cell having diffusion barriers 有权
标题翻译：具有扩散阻挡层的堆积式存储单元
公开(公告)号：US07187079B2
公开(公告)日：2007-03-06
申请号：US10666381
申请日：2003-09-19
申请人： Vikram Joshi , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Vikram Joshi , Narayan Solayappan , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L23/48
CPC分类号： H01L27/11502 , C30B29/32 , C30B29/68 , H01L23/642 , H01L27/11507 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A nonconductive hydrogen barrier layer is deposited on a substrate and completely covers the surface area over a memory capacitor and a MOSFET switch of an integrated circuit memory cell. A portion of an insulator layer adjacent to the bottom electrode of a memory capacitor is removed by etching to form a moat region. A nonconductive oxygen barrier layer is deposited to cover the sidewall and bottom of the moat. The nonconductive oxygen barrier layer and a conductive diffusion barrier beneath the capacitor together provide a substantially continuous diffusion barrier between the capacitor and a switch. Also, the nonconductive hydrogen barrier layer, the nonconductive oxygen barrier, and the conductive diffusion barrier substantially completely envelop the capacitor, in particular a ferroelectric thin film in the capacitor.
摘要翻译：非导电氢阻挡层沉积在基板上并完全覆盖集成电路存储单元的存储电容器和MOSFET开关上的表面积。通过蚀刻去除与存储电容器的底部电极相邻的绝缘体层的一部分，以形成护城河区域。沉积非导电氧阻隔层以覆盖护城河的侧壁和底部。电容器下面的非导电氧阻挡层和导电扩散阻挡层一起在电容器和开关之间提供基本上连续的扩散阻挡层。此外，非导电氢阻挡层，非导电氧阻挡层和导电扩散阻挡层基本上完全包围电容器，特别是电容器中的铁电薄膜。

5. 发明授权

US07064374B2 Barrier layers for protecting metal oxides from hydrogen degradation 有权
公开(公告)号：US07064374B2
公开(公告)日：2006-06-20
申请号：US10872895
申请日：2004-06-21
申请人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L27/108
CPC分类号： H01L28/57 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.

6. 发明授权

US06831313B2 Ferroelectric composite material, method of making same and memory utilizing same 失效
标题翻译：铁电复合材料，制造方法和利用其的记忆
公开(公告)号：US06831313B2
公开(公告)日：2004-12-14
申请号：US10332481
申请日：2003-07-22
申请人： Kiyoshi Uchiyama , Carlos A. Paz de Araujo , Vikram Joshi , Narayan Solayappan , Jolanta Celinska , Larry D. McMillan
发明人： Kiyoshi Uchiyama , Carlos A. Paz de Araujo , Vikram Joshi , Narayan Solayappan , Jolanta Celinska , Larry D. McMillan
IPC分类号： H01L2972
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02282 , H01L21/28291 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L29/516 , H01L29/6684 , H01L29/78391
摘要： A ferroelectric memory (436) includes a plurality of memory cells (73, 82, 100) each containing a ferroelectric thin film (15) including a microscopically composite material having a ferroelectric component (18) and a dielectric component (19), the dielectric component being a different chemical compound than the ferroelectric component. The dielectric component is preferably a fluxor, i.e., a material having a higher crystallization velocity than the ferroelectric component. The addition of the fluxor permits a ferroelectric thin film to be crystallized at a temperature of between 400° C. and 550° C.
摘要翻译：铁电存储器（436）包括多个存储单元（73,82,100），每个存储单元包含具有铁电元件（18）和电介质元件（19）的显微复合材料的铁电薄膜（15），所述电介质组分是与铁电体组分不同的化合物。电介质成分优选为磁通量，即具有比铁电体成分高的结晶速度的材料。添加磁通管允许铁电薄膜在400℃和550℃之间的温度下结晶。

7. 发明授权

US06582972B1 Low temperature oxidizing method of making a layered superlattice material 有权
标题翻译：制作层状超晶格材料的低温氧化法
公开(公告)号：US06582972B1
公开(公告)日：2003-06-24
申请号：US09544697
申请日：2000-04-07
申请人： Vikram Joshi , Jolanta Celinska , Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo , Koji Arita
发明人： Vikram Joshi , Jolanta Celinska , Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo , Koji Arita
IPC分类号： H01G2100
CPC分类号： H01L27/11502 , C30B7/00 , C30B7/005 , C30B29/68 , H01L21/31691
摘要： A thin film of precursor for forming a layered superlattice material is applied to an integrated circuit substrate, then a strong oxidizing agent is applied at low temperature in a range of from 100° C. to 300° C. to the precursor thin film, thereby forming a metal oxide thin film. The strong oxidizing agent may be liquid or gaseous. An example of a liquid strong oxidizing agent is hydrogen peroxide. An example of a gaseous strong oxidizing agent is ozone. The metal oxide thin film is crystallized by annealing at elevated temperature in a range of from 500° C. to 700° C., preferably not exceeding 650° C., for a time period in a range of from 30 minutes to two hours. Annealing is conducted in an oxygen-containing atmosphere, preferably including water vapor. Treatment by ultraviolet (UV) radiation may precede annealing. RTP in a range of from 500° C. to 700° C. may precede annealing.
摘要翻译：将用于形成层状超晶格材料的前体薄膜施加到集成电路基板上，然后在100℃至300℃的低温下向前体薄膜施加强氧化剂，由此形成金属氧化物薄膜。强氧化剂可以是液体或气体。液体强氧化剂的实例是过氧化氢。气态强氧化剂的实例是臭氧。金属氧化物薄膜通过在500℃至700℃，优选不超过650℃的范围内的升高温度退火30分钟至2小时的时间段而结晶。退火在含氧气氛中进行，优选包括水蒸气。紫外线（UV）辐射处理可能退火之前。可以在退火之前从500℃到700℃的范围内的RTP。

8. 发明授权

US06495878B1 Interlayer oxide containing thin films for high dielectric constant application 有权
标题翻译：用于高介电常数应用的含有薄膜的层间氧化物
公开(公告)号：US06495878B1
公开(公告)日：2002-12-17
申请号：US09365628
申请日：1999-08-02
申请人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Vikram Joshi , Narayan Solayappan , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： H01L27108
CPC分类号： H01L21/02197 , H01L21/02205 , H01L21/02282 , H01L21/02348 , H01L21/31691 , H01L27/0629
摘要： A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1−x)(TayNb1−y)2O6, where 0≦x≦1.0 and 0≦y≦1.0; (BaxSr1−x)2(TayNb1−Y)2O7, where 0≦x≦1.0 and 0≦y≦1.0; and (BaxSr1−x)2Bi2(TayNb1−y)2O10, where 0≦x≦1.0 and 0≦y≦1.0. Thin films according to the invention have a relative dielectric constant ≧40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is
摘要翻译：一种高介电常数绝缘体，包括选自钨青铜型氧化物，烧绿石型氧化物和Bi 2 O 3与选自钙钛矿和烧绿石型氧化物的氧化物的组合的金属氧化物的薄膜。一个实施方案包含由一般化学计量式AB2O6，A2B2O7和A2B2B2O10表示的金属氧化物，其中A表示选自由Ba，Bi，Sr，Pb，Ca，K，Na和La组成的金属组中的A位原子; B表示选自由Ti，Zr，Ta，Hf，Mo，W和Nb组成的金属组中的B位原子。优选地，金属氧化物是（BaxSr1-x）（TayNb1-y）2O6，其中0 <= x <= 1.0且0 <= y <= 1.0; （BaxSr1-x）2（TayNb1-Y）2O7，其中0 <= x <= 1.0且0 <= y <= 1.0; 和（BaxSr1-x）2Bi2（TayNb1-y）2O10，其中0 <= x <= 1.0且0 <= y <= 1.0。根据本发明的薄膜的相对介电常数> 40，优选约100。本发明的金属氧化物中的Vcc值接近零。 Tcc的值<1000ppm，优选<100。

9. 发明授权

US06437380B1 Ferroelectric device with bismuth tantalate capping layer and method of making same 失效
标题翻译：具有钽酸铋盖层的铁电元件及其制造方法
公开(公告)号：US06437380B1
公开(公告)日：2002-08-20
申请号：US09819542
申请日：2001-03-28
申请人： Myoungho Lim , Vikram Joshi , Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Myoungho Lim , Vikram Joshi , Narayan Solayappan , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L2976
CPC分类号： H01L29/516 , H01L28/56
摘要： An integrated circuit device includes a thin film of bismuth-containing layered superlattice material having a thickness not exceeding 100 nm, a capping layer thin film of bismuth tantalate, and an electrode. The capping layer has a thickness in a range of from 3 nm to 30 nm and is deposited between the thin film of layered superlattice material and the electrode to increase dielectric breakdown voltage. Preferably the capping layer contains an excess amount of bismuth relative to the stoichiometrically balanced amount represented by the balanced stoichiometric formula BiTaO4. Preferably, the layered superlattice material is ferroelectric SBT or SBTN. Preferably, the integrated circuit device is a nonvolatile ferroelectric memory. Heating treatments for fabrication of the integrated circuit device containing the bismuth tantalate capping layerare conducted at temperatures not exceeding 700° C., preferably in a range of from 650° C. to 700° C.
摘要翻译：集成电路器件包括厚度不超过100nm的含铋层状超晶格材料薄膜，钽酸铋覆盖层薄膜和电极。覆盖层的厚度在3nm至30nm的范围内，并且沉积在层状超晶格材料的薄膜和电极之间以增加介电击穿电压。优选地，封盖层相对于由平衡化学计量式BiTaO 4表示的化学计量平衡量含有过量的铋。优选地，层状超晶格材料是铁电SBT或SBTN。优选地，集成电路器件是非易失性铁电存储器。用于制造包含钽酸铋覆盖层的集成电路器件的加热处理在不超过700℃的温度下进行，优选在650℃至700℃的范围内。

10. 发明授权

US07075134B2 Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same 有权
公开(公告)号：US07075134B2
公开(公告)日：2006-07-11
申请号：US10626413
申请日：2003-07-24
申请人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Vikram Joshi
发明人： Carlos A. Paz de Araujo , Larry D. McMillan , Narayan Solayappan , Vikram Joshi
IPC分类号： H01L31/119 , H01L27/108
CPC分类号： H01L27/11502 , C30B29/32 , C30B29/68 , G11C11/22 , H01L21/7687 , H01L23/642 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： A three-dimensional (“3-D”) memory capacitor comprises a bottom electrode, a ferroelectric thin film, and a top electrode that conform to a 3-D surface of an insulator layer. The capacitance area is greater than the horizontal footprint area of the capacitor. Preferably, the footprint of the capacitor is less than 0.2 nm2, and the corresponding capacitance area is typically in a range of from 0.4 nm2 to 1.0 nm2 The ferroelectric thin film preferably has a thickness not exceeding 60 nm. A capacitor laminate including the bottom electrode, ferroelectric thin film, and the top electrode preferably has a thickness not exceeding 200 nm. A low-thermal-budget MOCVD method for depositing a ferroelectric thin film having a thickness in a range of from 30 nm to 90 nm includes an RTP treatment before depositing the top electrode and an RTP treatment after depositing the top electrode and etching the ferroelectric layer.

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