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1. 发明授权

US5814849A Thin films of ABO.sub.3 with excess B-site modifiers and method of fabricating integrated circuits with same 失效
标题翻译：具有过量B位修饰剂的ABO3薄膜及其制造集成电路的方法
公开(公告)号：US5814849A
公开(公告)日：1998-09-29
申请号：US788229
申请日：1997-01-27
申请人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott
发明人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L29/76
CPC分类号： C04B35/4682 , C04B35/47 , C04B35/6264 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , C04B2235/32 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3234 , C04B2235/3241 , C04B2235/3243 , C04B2235/3251 , C04B2235/3262 , C04B2235/3268 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3289 , C04B2235/441 , C04B2235/449 , C04B2235/6585 , C04B2235/72 , C04B2235/79 , H01L28/55
摘要： A method for fabricating an integrated circuit capacitor having a dielectric layer comprising BST with excess B-site material, such as titanium, added. A polyoxyalkylated metal liquid precursor solution is prepared comprising a stock solution of BST of greater then 99.999% purity blended with excess B-site material such as titanium such that the titanium is in the range of 0-100 mol %. A xylene exchange is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 650.degree. C. to 800.degree. C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650.degree. C. to 800.degree. C. for about 30 minutes. The resultant capacitor exhibits an enlarged dielectric constant with only a small increase in leakage current.
摘要翻译：一种制造集成电路电容器的方法，该集成电路电容器具有包含BST的介电层，该BST具有过量的B位材料，例如钛。制备聚氧化烷基化金属液体前体溶液，其包含与过量的B位材料如钛混合的大于99.999％纯度的BST的储备溶液，使得钛在0-100摩尔％的范围内。然后进行二甲苯交换以调节溶液的粘度，以便旋涂到基底上。将前体在第一电极上旋转，在400℃下干燥2分钟，然后在650℃至800℃退火约1小时，以形成具有过量钛的BST层。在650℃至800℃下沉积，图案化和退火第二电极约30分钟。所得到的电容器的介电常数增大，泄漏电流只有小的增加。

2. 发明授权

US06454964B1 Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same 失效
标题翻译：金属聚氧烷基化前体溶液在辛烷溶剂中及其制备方法
公开(公告)号：US06454964B1
公开(公告)日：2002-09-24
申请号：US09718847
申请日：2000-11-22
申请人： Michael C. Scott , Carlos A. Paz De Araujo
发明人： Michael C. Scott , Carlos A. Paz De Araujo
IPC分类号： C09K300
CPC分类号： H01L27/11502 , C23C16/45561 , C23C18/1216 , C23C18/1225 , C30B7/00 , C30B7/005 , C30B29/68 , H01C7/1013 , H01C7/112 , H01L21/31691 , H01L27/10805 , H01L28/55 , H01L28/56
摘要： A liquid precursor solution for use according to a method of manufacturing metal oxide electronic components includes a polyoxyalkylated metal complex dispersed in an alkane solvent. The alkane solvent is preferably n-octane.
摘要翻译：根据制造金属氧化物电子部件的方法使用的液体前体溶液包括分散在烷烃溶剂中的聚氧化烷基化金属络合物。烷烃溶剂优选为正辛烷。

3. 发明授权

US5614018A Integrated circuit capacitors and process for making the same 失效
标题翻译：集成电路电容器和制造相同的工艺
公开(公告)号：US5614018A
公开(公告)日：1997-03-25
申请号：US273592
申请日：1994-07-11
申请人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott , Joseph D. Cuchiaro
发明人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott , Joseph D. Cuchiaro
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L27/115 , C30B9/08
CPC分类号： H01L27/11502 , C04B35/4682 , C04B35/6264 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L28/56 , H01L28/60 , C04B2235/3213 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3243 , C04B2235/3268 , C04B2235/441 , C04B2235/449 , C04B2235/72 , H01L28/55
摘要： A xylene exchange is performed on a stock solution of BST of greater then 99.999% purity dissolved in methoxyethanol, and a carboxylate of a dopant metal, such as magnesium 2-ethylhexanoate is added to form a precursor. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 750.degree. C. to 800.degree. C. for about an hour to form a layer of accurately doped BST. A second electrode is deposited, patterned, and annealed at between 750.degree. C. to 800.degree. C. for about 30 minutes. Excellent leakage current results if the dopant is magnesium of about 5% molarity. For other dopants, such as Mg, Nb, Y, Bi, and Sn the preferred dopant range is 0.2% to 0.3% molarity. The magnesium-doped material is used as a buffer layer between the electrodes and BST dielectric of an undoped BST capacitor.
摘要翻译：对溶解在甲氧基乙醇中的纯度为99.999％的BST的原液进行二甲苯交换，加入2-乙基己酸镁等掺杂剂金属的羧酸盐，形成前体。将前体在第一电极上旋转，在400℃下干燥2分钟，然后在750℃至800℃退火约1小时以形成精确掺杂的BST层。在750℃至800℃下沉积，图案化和退火第二电极约30分钟。如果掺杂剂为约5％摩尔浓度的镁，则会产生优异的漏电流。对于其它掺杂剂如Mg，Nb，Y，Bi和Sn，优选的掺杂剂范围为0.2％至0.3％摩尔浓度。掺杂镁的材料用作未掺杂的BST电容器的电极和BST电介质之间的缓冲层。

4. 发明授权

US6025619A Thin films of ABO.sub.3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same 失效
标题翻译：具有过量A位点和B位修饰子的ABO3薄膜及其制造集成电路的方法
公开(公告)号：US6025619A
公开(公告)日：2000-02-15
申请号：US982816
申请日：1997-12-02
申请人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott
发明人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott
IPC分类号： C23C18/12 , H01L21/02 , H01L21/314 , H01L21/316 , H01L29/76
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1295 , H01L28/60
摘要： A method for fabricating an integrated circuit capacitor having a dielectric layer comprising BST with excess A-site and B-site materials such as barium and titanium added. An organometallic or metallic soap precursor solution is prepared comprising a stock solution of BST of greater than 99.999% purity blended with excess A-site and B-site materials such as barium and titanium such that the barium is in the range of 0.01-100 mol %, and such that the titanium is in the range of 0.01-100 mol %. A xylene exchange is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor solution is spun on a first electrode, dried at 400.degree. C. for 2 to 10 minutes, then annealed at 650.degree. C. to 800.degree. C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650.degree. C. to 800.degree. C. for about 30 minutes. The resultant capacitor exhibits an enlarged dielectric constant with little change in leakage current.
摘要翻译：一种用于制造集成电路电容器的方法，该集成电路电容器具有包含BST的介电层，其中添加了过量的A位和B位的材料如钡和钛。制备有机金属或金属皂前体溶液，其包含与过量的A位点和B位部位材料如钡和钛混合的大于99.999％纯度的BST的储备溶液，使得钡在0.01-100mol ％，并且使得钛在0.01〜100摩尔％的范围内。然后进行二甲苯交换以调节溶液的粘度，以便旋涂到基底上。将前体溶液在第一电极上旋转，在400℃下干燥2至10分钟，然后在650℃至800℃退火约1小时以形成具有过量钛的BST层。在650℃至800℃下沉积，图案化和退火第二电极约30分钟。所得到的电容器的介电常数增大，漏电流几乎没有变化。

5. 发明授权

US5825057A Process for fabricating layered superlattice materials and making electronic devices including same 失效
公开(公告)号：US5825057A
公开(公告)日：1998-10-20
申请号：US349692
申请日：1994-12-05
申请人： Hitoshi Watanabe , Carlos A. Paz De Araujo , Hiroyuki Yoshimori , Michael C. Scott , Takashi Mihara , Joseph D. Cuchiaro , Larry D. McMillan
发明人： Hitoshi Watanabe , Carlos A. Paz De Araujo , Hiroyuki Yoshimori , Michael C. Scott , Takashi Mihara , Joseph D. Cuchiaro , Larry D. McMillan
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L29/76
CPC分类号： B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C26/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H05K3/105
摘要： A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Prebaking the substrate and oxygen in the RTP and anneal is essential, except for high bismuth content precursors. Excess bismuth between 110% and 140% of stoichiometry and RTP temperature of 725.degree. C. is optimum. The film is formed in two layers, the first of which uses a stoichiometric precursor and the second of which uses an excess bismuth precursor. The electronic properties are so regularly dependent on process parameters and material composition, and such a wide variety of materials are possible, that electronic devices can be designed by selecting from a continuous record of the values of one or more electronic properties as a continuous function of the process parameters and material composition, and utilizing the selected process and material composition to make a device.

6. 发明授权

US5624707A Method of forming ABO.sub.3 films with excess B-site modifiers 失效
标题翻译：用过量B位修饰剂形成ABO3薄膜的方法
公开(公告)号：US5624707A
公开(公告)日：1997-04-29
申请号：US270819
申请日：1994-07-05
申请人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott
发明人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , B05D3/02 , B05D5/12
CPC分类号： C04B35/4682 , C04B35/47 , C04B35/6264 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1275 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , C04B2235/32 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3217 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3234 , C04B2235/3241 , C04B2235/3243 , C04B2235/3251 , C04B2235/3262 , C04B2235/3268 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3289 , C04B2235/441 , C04B2235/449 , C04B2235/6585 , C04B2235/72 , C04B2235/79 , H01L28/55
摘要： A method for fabricating an integrated circuit capacitor having a dielectric layer comprising BST with excess B-site material, such as titanium, added. A polyoxyalkyated metal liquid precursor solution is prepared comprising a stock solution of BST of greater then 99.999% purity blended with excess B-site material such as titanium such that the titanium is in the range of 0-100 mol %. A xylene exchange is then performed to adjust the viscosiy of the solution for spin-on application to a substrate. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 650.degree. C. to 800.degree. C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650.degree. C. to 800.degree. C. for about 30 minutes. The resultant capacitor exhibits an enlarged dielectric constant with only a small increase in leakage current.
摘要翻译：一种制造集成电路电容器的方法，该集成电路电容器具有包含BST的介电层，该BST具有过量的B位材料，例如钛。制备聚氧化烯金属液体前体溶液，其包含与过量的B位材料如钛相混合的大于99.999％纯度的BST的储备溶液，使得钛在0-100摩尔％的范围内。然后进行二甲苯交换以调节溶液的粘度以用于旋涂施加到基底上。将前体在第一电极上旋转，在400℃下干燥2分钟，然后在650℃至800℃退火约1小时，以形成具有过量钛的BST层。在650℃至800℃下沉积，图案化和退火第二电极约30分钟。所得到的电容器的介电常数增大，泄漏电流只有小的增加。

7. 发明授权

US06072207A Process for fabricating layered superlattice materials and making electronic devices including same 失效
标题翻译：用于制造分层超晶格材料并制造包括其的电子器件的方法
公开(公告)号：US06072207A
公开(公告)日：2000-06-06
申请号：US405953
申请日：1995-03-17
申请人： Hiroyuki Yoshimori , Carlos A. Paz De Araujo , Takeshi Ito , Michael C. Scott , Larry D. McMillan
发明人： Hiroyuki Yoshimori , Carlos A. Paz De Araujo , Takeshi Ito , Michael C. Scott , Larry D. McMillan
IPC分类号： H01L21/8247 , B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L41/24 , H05K3/10 , H01L29/12
CPC分类号： C23C18/1216 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C26/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/318 , H01L28/55 , H01L41/257 , H05K3/105
摘要： A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Special polyoxyalkylated precursor solutions are designed to optimize polarizability of the corresponding metal oxide materials by adding dopants including stoichiometric excess amounts of bismuth and tantalum. The RTP baking process is especially beneficial in optimizing the polarizability of the resultant metal oxide.
摘要翻译：将含有金属的液体前体施加到基材上，进行RTP烘焙并退火以形成层状超晶格材料。设计特殊的聚氧化烷基化前体溶液通过添加包括化学计量过量的铋和钽的掺杂剂来优化相应的金属氧化物材料的极化率。 RTP烘焙过程对于优化所得金属氧化物的极化率是特别有利的。

8. 发明授权

US5648114A Chemical vapor deposition process for fabricating layered superlattice materials 失效
标题翻译：用于制造层状超晶格材料的化学气相沉积工艺
公开(公告)号：US5648114A
公开(公告)日：1997-07-15
申请号：US90767
申请日：1993-07-12
申请人： Carlos A. Paz De Araujo , Hitoshi Watanabe , Michael C. Scott , Takashi Mihara
发明人： Carlos A. Paz De Araujo , Hitoshi Watanabe , Michael C. Scott , Takashi Mihara
IPC分类号： C30B29/10 , C23C16/02 , C23C16/40 , C23C16/56 , C23C18/12 , C30B7/00 , C30B25/02 , C30B29/68 , C30B31/22 , C30B33/02 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8247 , H01L27/04 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , B05D5/12 , C23C16/00 , C30B28/14
CPC分类号： C23C16/45561 , C23C16/0218 , C23C16/40 , C23C16/56 , C30B25/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/02197 , H01L21/02271 , H01L21/02337 , H01L21/02356 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55
摘要： A substrate is prebaked in an oxygen furnace. A thin film of layered superlattice oxide is formed on the substrate by a chemical vapor deposition process. The film is RTP baked to provide grains with a mixed phase of A-axis and C-axis orientation. The film may be treated by ion implantation prior to the RTP bake and oxygen furnace annealed after the RTP bake. An electrode is deposited on the layered superlattice thin film and then the film and electrode are oxygen furnace annealed.
摘要翻译：将基材在氧气炉中预烘烤。通过化学气相沉积工艺在衬底上形成层状超晶格氧化物薄膜。该膜经RTP烘焙以提供具有A轴和C轴取向的混合相的晶粒。在RTP烘烤之前可以通过离子注入处理该膜，并且在RTP烘烤之后退火氧炉。将电极沉积在层状超晶格薄膜上，然后将膜和电极进行氧炉退火。

9. 发明授权

US5439845A Process for fabricating layered superlattice materials and making electronic devices including same 失效
公开(公告)号：US5439845A
公开(公告)日：1995-08-08
申请号：US350323
申请日：1994-12-05
申请人： Hitoshi Watanabe , Carlos A. Paz De Araujo , Hiroyuki Yoshimori , Michael C. Scott , Takashi Mihara , Joseph D. Cuchiaro , Larry D. McMillan
发明人： Hitoshi Watanabe , Carlos A. Paz De Araujo , Hiroyuki Yoshimori , Michael C. Scott , Takashi Mihara , Joseph D. Cuchiaro , Larry D. McMillan
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L29/15
CPC分类号： B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C26/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H05K3/105
摘要： A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Prebaking the substrate and oxygen in the RTP and anneal is essential, except for high bismuth content precursors. Excess bismuth between 110% and 140% of stoichiometry and RTP temperature of 725.degree. C. is optimum. The film is formed in two layers, the first of which uses a stoichiometric precursor and the second of which uses an excess bismuth precursor. The electronic properties are so regularly dependent on process parameters and material composition, and such a wide variety of materials are possible, that electronic devices can be designed by selecting from a continuous record of the values of one or more electronic properties as a continuous function of the process parameters and material composition, and utilizing the selected process and material composition to make a device.

10. 发明授权

US06327135B1 Thin film capacitors on gallium arsenide substrate 失效
标题翻译：砷化镓衬底上的薄膜电容器
公开(公告)号：US06327135B1
公开(公告)日：2001-12-04
申请号：US08438062
申请日：1995-05-08
申请人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott , Toshiyuki Ueda
发明人： Masamichi Azuma , Carlos A. Paz De Araujo , Michael C. Scott , Toshiyuki Ueda
IPC分类号： H01G406
CPC分类号： H01L27/11502 , C30B7/00 , C30B29/68 , H01L21/31691 , H01L28/55 , H01L28/60
摘要： A silicon nitride barrier layer is deposited on a gallium arsenide substrate to prevent evaporation of the substrate in subsequent heating steps. A silicon dioxide stress reduction layer is deposited on the barrier layer. A first electrode is formed on the stress reduction layer, then a liquid precursor is spun on the first electrode, dried at about 400° C., and annealed at between 600° C. and 850° C. to form a BST capacitor dielectric. A second electrode is deposited on the dielectric and annealed.
摘要翻译：在砷化镓衬底上沉积氮化硅阻挡层以防止随后的加热步骤中衬底的蒸发。在阻挡层上沉积二氧化硅应力降低层。在应力降低层上形成第一电极，然后在第一电极上旋转液体前体，在约400℃下干燥，并在600℃和850℃之间退火以形成BST电容器电介质。第二电极沉积在电介质上并退火。

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