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41. 发明申请

US20130062639A1 METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DEVICES HAVING OUTPUT WITH SELECTED CHARACTERISTICS 审中-公开
标题翻译：用于制造具有选定特性的输出的发光二极管（LED）器件的方法
公开(公告)号：US20130062639A1
公开(公告)日：2013-03-14
申请号：US13229824
申请日：2011-09-12
申请人： TRUNG TRI DOAN , JUI-KANG YEN
发明人： TRUNG TRI DOAN , JUI-KANG YEN
IPC分类号： H01L33/50
CPC分类号： H01L33/50 , H01L2933/0041
摘要： A method for fabricating a light emitting diode (LED) device includes the steps of forming (or providing) a plurality of LED dice, forming a plurality of wavelength conversions layers, and then evaluating at least one electromagnetic radiation emission characteristic of each LED die and at least one color characteristic of each wavelength conversion layer. The method also includes the steps of comparing the evaluated characteristic of each LED die and the evaluated characteristic of each wavelength conversion layer to a database, selecting a selected LED die and a selected wavelength conversion layer based on the evaluating and comparing steps, and then attaching the selected wavelength conversion layer to the selected LED die.
摘要翻译：一种制造发光二极管（LED）器件的方法包括以下步骤：形成（或提供）多个LED管芯，形成多个波长转换层，然后评估每个LED管芯的至少一个电磁辐射发射特性; 每个波长转换层的至少一种颜色特性。该方法还包括以下步骤：将每个LED管芯的评估特性和每个波长转换层的评估特性与数据库进行比较，基于评估和比较步骤选择所选择的LED管芯和选定的波长转换层，然后附加所选择的波长转换层到所选择的LED管芯。

42. 外观设计

USD645008S1 Light emitting diode device 有权
标题翻译：发光二极管装置
公开(公告)号：USD645008S1
公开(公告)日：2011-09-13
申请号：US29378722
申请日：2010-11-08
申请人： Li-Wei Shan , Wen Huang Liu
设计人： Li-Wei Shan , Wen Huang Liu

43. 发明申请

US20110114966A1 LIGHT EMITTING DIODE DEVICE 有权
标题翻译：发光二极管装置
公开(公告)号：US20110114966A1
公开(公告)日：2011-05-19
申请号：US12939142
申请日：2010-11-03
申请人： Wen-Huang Liu , Li-Wei Shan , Chen-Fu Chu
发明人： Wen-Huang Liu , Li-Wei Shan , Chen-Fu Chu
IPC分类号： H01L33/32 , H01L33/60
CPC分类号： H01L33/60 , H01L33/22 , H01L33/38 , H01L33/405
摘要： A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.
摘要翻译：具有向外定位的金属电极的高亮度垂直发光二极管（LED）装置。 LED器件通过以下方式形成：使用诸如物理气相沉积（PVD），化学气相沉积（CVD），蒸发，电镀或沉积法的沉积方法在LED外延结构的表面的边缘上形成金属电极其任何组合; 然后执行包装过程。 LED的组成可以是氮化物，磷化物或砷化物。本发明的LED具有以下优点：提高电流扩散性能，降低金属电极的光吸收，增加亮度，提高效率，从而提高能量效率。金属电极位于器件的边缘和发光侧。金属电极具有两个侧壁，其中一个侧壁可以从另一个侧壁接收来自该装置的更多的发射光。

44. 发明申请

US20110108851A1 VERTICAL LIGHT EMITTING DIODE HAVING AN OUTWARDLY DISPOSED ELECTRODE 有权
标题翻译：具有外部电极的垂直发光二极管
公开(公告)号：US20110108851A1
公开(公告)日：2011-05-12
申请号：US12939984
申请日：2010-11-04
申请人： Chen-Fu Chu , Wen-Huang Liu , Hao-Chun Cheng
发明人： Chen-Fu Chu , Wen-Huang Liu , Hao-Chun Cheng
IPC分类号： H01L33/32 , H01L33/62
CPC分类号： H01L33/38 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/505 , H01L33/62 , H01L2224/48091 , H01L2924/00014
摘要： The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.
摘要翻译：本发明涉及一种具有向外设置的电极的垂直发光二极管（VLED），垂直发光二极管包括导电基底，形成在导电基底上的半导体外延结构，形成在半导体外延结构周边的钝化层以及形成在钝化层上并与半导体外延结构的上表面的边缘接触的导电框架，使得导电框架电连接到半导体外延结构。

45. 发明授权

US07852015B1 Solid state lighting system and maintenance method therein 有权
标题翻译：固态照明系统及其维护方法
公开(公告)号：US07852015B1
公开(公告)日：2010-12-14
申请号：US11548604
申请日：2006-10-11
申请人： Jui-Kang Yen , Trung Tri Doan , Yung-Wei Chen , Ching-Tai Cheng
发明人： Jui-Kang Yen , Trung Tri Doan , Yung-Wei Chen , Ching-Tai Cheng
IPC分类号： H05B41/16
CPC分类号： F21V23/06 , F21K9/23 , F21Y2105/10 , F21Y2115/10
摘要： A solid state light module incorporating light emitting diodes (LEDs) disposed on a metal substrate, a solid state lighting system employing such modules, and method of replacing LEDs of the light modules are provided. The metal substrate may allow for lower LED junction temperature and, hence, a longer device lifetime. In addition, the metal substrate may allow for the potential omission of a heat sink, which may reduce light module size, when compared to conventional solid state light emitters.
摘要翻译：提供了一种结合设置在金属基板上的发光二极管（LED）的固态光模块，采用这种模块的固态照明系统，以及替换该光模组的LED的方法。金属基板可以允许较低的LED结温度，并因此允许更长的器件寿命。此外，与传统的固态发光体相比，金属基板可以允许潜在的省略散热器，这可能减少光模块尺寸。

46. 发明授权

US07563625B2 Method of making light-emitting diodes (LEDs) with improved light extraction by roughening 有权
标题翻译：通过粗糙化制造具有改进的光提取的发光二极管（LED）的方法
公开(公告)号：US07563625B2
公开(公告)日：2009-07-21
申请号：US11618468
申请日：2006-12-29
申请人： Chuong Anh Tran , Trung Tri Doan , Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan
发明人： Chuong Anh Tran , Trung Tri Doan , Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/0095
摘要： Methods for fabricating a semiconductor light-emitting diode (LED) device with increased light extraction are provided. The method generally includes applying a mask to a surface of an LED wafer, etching the surface of the LED wafer such that etched pits are formed in the surface, removing the mask, and roughening or texturing the surface of the LED wafer including the etched pits. In this manner, the surface area of the LED device may be increased when compared to a conventional LED device, and less emitted light may experience total internal reflection (TIR) according to Snell's law, thereby leading to increased light extraction.
摘要翻译：提供了用于制造具有增加的光提取的半导体发光二极管（LED）装置的方法。该方法通常包括将掩模施加到LED晶片的表面，蚀刻LED晶片的表面，使得在表面形成蚀刻的凹坑，去除掩模，以及使包含蚀刻凹坑的LED晶片的表面变粗糙或纹理化。以这种方式，与传统的LED器件相比，LED器件的表面积可以增加，并且较少的发射光可以根据斯涅耳定律经历全内反射（TIR），从而导致增加的光提取。

47. 发明申请

US20220352449A1 Method For Making Light Emitting Device (LED) Arrays And Electronic Products Using A Temporary Substrate And A Carrier Substrate 有权
公开(公告)号：US20220352449A1
公开(公告)日：2022-11-03
申请号：US17839543
申请日：2022-06-14
申请人： SemiLEDs Optoelectronics Co., Ltd
发明人： David TRUNG DOAN , Trung TRI DOAN
IPC分类号： H01L33/62 , H01L25/16 , H01L33/52 , H01L25/075 , H01L33/00
摘要： A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and mounting additional devices on the desired circuitry to form a second circuitry level; performing the mounting step multiple times to form a plurality of electronic products that include the additional devices and the second circuitry level; and separating the LEDs from the carrier substrate and the temporary substrate.

48. 发明授权

US11387397B2 Method for making light emitting device (LED) arrays using a temporary substrate and a carrier substrate 有权
公开(公告)号：US11387397B2
公开(公告)日：2022-07-12
申请号：US17078323
申请日：2020-10-23
申请人： SemiLEDs Optoelectronics Co., Ltd
发明人： David Trung Doan , Trung Tri Doan
IPC分类号： H01L33/62 , H01L25/16 , H01L33/52 , H01L25/075 , H01L33/00
摘要： A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.

49. 发明授权

US09343639B2 Light emitting diode (LED) device having lens protective structure and method of fabrication 有权
标题翻译：具有透镜保护结构和制造方法的发光二极管（LED）装置
公开(公告)号：US09343639B2
公开(公告)日：2016-05-17
申请号：US14093173
申请日：2013-11-29
申请人： SemiLEDS Optoelectronics Co., Ltd.
发明人： David T Doan
IPC分类号： H01L33/00 , H01L33/58 , H01L33/60
CPC分类号： H01L33/58 , H01L24/97 , H01L33/60 , H01L2224/48091 , H01L2924/16152 , H01L2924/181 , H01L2933/0058 , H01L2924/00014 , H01L2924/00012
摘要： A light emitting diode (LED) device includes a substrate, a light emitting diode (LED) die mounted to the substrate configured to emit electromagnetic radiation, a lens covering the (LED) die, and a lens protective structure configured to protect the lens and a lens bonding layer from electromagnetic radiation emitted by the light emitting diode (LED) die and from reflected electromagnetic radiation within the lens. The lens protective structure can also be configured to reflect electromagnetic radiation increasing light extraction from the (LED) device. A method for fabricating the (LED) device includes the step of forming an opaque lens protective structure on the lens or on the lens bonding layer configured to protect the lens and the lens bonding layer from electromagnetic radiation emitted by the light emitting diode (LED) die and from reflected electromagnetic radiation within the lens.
摘要翻译：发光二极管（LED）装置包括：基板，安装到被配置为发射电磁辐射的基板的发光二极管（LED）裸片，覆盖（LED）裸片的透镜;以及被配置为保护透镜的透镜保护结构，由发光二极管（LED）裸片发射的电磁辐射和透镜内的反射电磁辐射的透镜结合层。透镜保护结构还可以被配置为反射从（LED）装置增加光提取的电磁辐射。一种制造（LED）器件的方法包括在透镜上或透镜粘合层上形成不透明透镜保护结构的步骤，该透镜粘结层被配置为保护透镜和透镜粘合层免受由发光二极管（LED）发射的电磁辐射，并从透镜内的反射电磁辐射中消失。

50. 发明授权

US09214456B2 Light emitting diode (LED) system having lighting device and wireless control system 有权
标题翻译：具有照明装置和无线控制系统的发光二极管（LED）系统
公开(公告)号：US09214456B2
公开(公告)日：2015-12-15
申请号：US13670531
申请日：2012-11-07
申请人： SemiLEDS Optoelectronics Co., Ltd.
发明人： Trung Tri Doan
IPC分类号： H01L25/16
CPC分类号： H01L25/167 , H01L2224/16225 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2924/12032 , H01L2924/13033 , H01L2924/13091 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode (LED) system includes one or more light emitting diodes (LED), or other lighting devices, configured to provide lighting in an area, and a wireless control system configured to control the light emitting diodes (LED). The wireless control system includes at least one transmitter/receiver device in signal communication with the light emitting diode (LED), and a wireless control device operable by a user, configured to send input signals to the transmitter/receiver device for controlling the light emitting diode (LED), and to receive output signals from the transmitter/receiver device for indicating a status of the light emitting diodes (LED).
摘要翻译：发光二极管（LED）系统包括一个或多个配置成在区域内提供照明的发光二极管（LED）或其他照明装置，以及被配置为控制发光二极管（LED）的无线控制系统。无线控制系统包括与发光二极管（LED）信号通信的至少一个发射机/接收机设备，以及可由用户操作的无线控制设备，其被配置为向发射机/接收机设备发送输入信号以控制发光二极管（LED），并且从发射机/接收机设备接收用于指示发光二极管（LED）的状态的输出信号。

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