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    • 1. 发明授权
    • High thermal conductivity substrate for a semiconductor device
    • 用于半导体器件的高导热性衬底
    • US07911059B2
    • 2011-03-22
    • US11760369
    • 2007-06-08
    • Ching-Tai ChengJui-Kang Yen
    • Ching-Tai ChengJui-Kang Yen
    • H01L23/52H01L21/00
    • H01L33/641H01L24/97H01L33/486H01L2224/48091H01L2224/48227H01L2924/01322H01L2924/12041H01L2924/15787H01L2924/00014H01L2924/00
    • A method and apparatus for packaging semiconductor dies for increased thermal conductivity and simpler fabrication when compared to conventional semiconductor packaging techniques are provided. The packaging techniques described herein may be suitable for various semiconductor devices, such as light-emitting diodes (LEDs), central processing units (CPUs), graphics processing units (GPUs), microcontroller units (MCUs), and digital signal processors (DSPs). For some embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower cavity with one or more metal layers deposited therein to dissipate heat away from the semiconductor dies. For other embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower surface with one or more metal layers deposited thereon for efficient heat dissipation.
    • 提供了一种用于封装半导体管芯以提高导热性并且与常规半导体封装技术相比更简单的制造的方法和装置。 本文描述的封装技术可适用于各种半导体器件,例如发光二极管(LED),中央处理单元(CPU),图形处理单元(GPU),微控制器单元(MCU)和数字信号处理器(DSP) 。 对于一些实施例,封装包括陶瓷衬底,其具有上空腔,其中设置有一个或多个半导体管芯,并且具有沉积有一个或多个金属层的下部空腔,以将散热从半导体管芯散出。 对于其它实施例,封装包括陶瓷衬底,该陶瓷衬底具有上空腔,其中设置有一个或多个半导体管芯,并且具有下表面,其上沉积有一个或多个金属层,用于有效散热。
    • 2. 发明授权
    • Thermal interface material and method of producing the same
    • 热界面材料及其制造方法
    • US07728052B2
    • 2010-06-01
    • US11309896
    • 2006-10-24
    • Ching-Tai ChengNien-Tien Cheng
    • Ching-Tai ChengNien-Tien Cheng
    • C08K3/22
    • C09K5/10
    • A thermal interface material (10) includes 100 parts by weight of a silicone oil (11) and 800˜1200 parts by weight of a metal powder (12) mixed into the silicone oil. An outer surface of each metal particle (121) of the metal powder is coated with a metal oxide layer (122). A method of producing the thermal interface material includes steps of: (1) applying a layer of organo coupling agent on the metal powder; (2) heating the metal powder at a temperature between 200 to 300° C. to coat a metal oxide layer on an outer surface of the metal powder; and (3) adding the metal powder with the coated metal oxide layer to a silicone oil. The thermal interface material has an excellent thermal conductivity and an excellent electrical insulating property.
    • 热界面材料(10)包括100重量份的硅油(11)和800〜1200重量份的混合到硅油中的金属粉末(12)。 金属粉末的每个金属颗粒(121)的外表面涂覆有金属氧化物层(122)。 一种制备该热界面材料的方法包括以下步骤:(1)在金属粉末上涂一层有机偶联剂; (2)在200〜300℃的温度下加热金属粉末,以在金属粉末的外表面上涂覆金属氧化物层; 和(3)将金属粉末与涂覆的金属氧化物层一起添加到硅油中。 热界面材料具有优异的导热性和优异的电绝缘性能。