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41. 发明申请

US20080230096A1 SUBSTRATE CLEANING DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板清洁装置和基板处理装置
公开(公告)号：US20080230096A1
公开(公告)日：2008-09-25
申请号：US12052065
申请日：2008-03-20
申请人： Shigeru KAWAMURA , Teruyuki Hayashi
发明人： Shigeru KAWAMURA , Teruyuki Hayashi
IPC分类号： B08B7/00 , B08B5/00
CPC分类号： H01L21/67115 , H01L21/67023
摘要： The device forms a flow of a back-side gas over a back-side surface of the end portion of the wafer undergoing a cleaning process executed by radiating an electromagnetic wave such as an ultraviolet ray onto the end portion of the wafer. During the cleaning process, a flow of front-side gas directed along a direction matching the direction of the back-side gas is also formed over the front-side surface of the end portion of the wafer. The flow velocity of the back-side gas is set higher than the flow velocity of the front-side gas. As a result, a descending gas current is created to flow from the wafer front side toward the wafer back side at a gap between the wafer end portion and a partitioning plate, which makes it possible to reliably prevent an active species formed on the back side of the wafer end portion from reaching over to the wafer front side.
摘要翻译：该装置在经过通过将诸如紫外线的电磁波辐射照射到晶片的端部执行的清洁处理的晶片的端部的背面表面上形成后侧气体的流动。在清洗过程中，沿着与背面气体的方向一致的方向引导的前侧气体的流动也形成在晶片的端部的前侧表面上。背面气体的流速被设定为高于前侧气体的流速。结果，在晶片端部和分隔板之间的间隙处产生从晶片正面朝向晶片背面侧流动的下降气流，这使得可以可靠地防止形成在背面的活性物质的晶片端部分到达晶片正面。

42. 发明授权

US06787241B2 Film obtained from silsesquioxane polymer and method of preparing same 失效
标题翻译：由倍半硅氧烷聚合物获得的薄膜及其制备方法
公开(公告)号：US06787241B2
公开(公告)日：2004-09-07
申请号：US10096667
申请日：2002-03-14
申请人： Toshiaki Kobayashi , Teruyuki Hayashi , Masato Tanaka , Kouichi Yamaguchi
发明人： Toshiaki Kobayashi , Teruyuki Hayashi , Masato Tanaka , Kouichi Yamaguchi
IPC分类号： B32B2520
CPC分类号： H01L21/02134 , C09D183/04 , C09D183/14 , H01L21/02282 , H01L21/3124 , Y10T428/31663
摘要： A film obtained by heating a coating of a resin composition at a temperature lower than 300° C. but not lower than 40° C. in air or in an inert atmosphere. The resin composition includes a hydrosilylated polymer obtained by reacting at least one hydridosilsesquioxane compound of the following formula (1): (HSiO3/2)n (1) wherein n is an integer of 4-1000, with at least one compound of the following formula (2) R1—C≡C—R2 (2) wherein R1 represents a hydrogen atom, a monovalent organic group or a monovalent organosilicon group and R2 represents a hydrogen atom or a group of the formula: —(R′)q—C≡C—R where R′ represents a divalent organic group or a divalent organometallic group, R represents a monovalent organic group or a monovalent organosilicon group and q is 0 or 1 with the proviso that when R1 is a hydrogen atom R2 is a hydrogen atom.
摘要翻译：通过在空气或惰性气氛中在低于300℃但不低于40℃的温度下加热树脂组合物的涂层获得的薄膜。树脂组合物包括通过使至少一种下式（1）的其中n为4-1000的整数的氢化倍半硅氧烷化合物与至少一种下式（2）的化合物反应得到的氢化硅烷化聚合物，其中R 1，表示氢原子，一价有机基团或一价有机硅基团，R 2表示氢原子或下式的基团：其中R'表示二价有机基团或二价有机金属基团，R表示一价有机基团或一价有机硅基团，q为0或1，条件是当R 1为氢原子时，R 2为氢原子。

43. 发明授权

US08608422B2 Particle sticking prevention apparatus and plasma processing apparatus 有权
标题翻译：防尘装置和等离子体处理装置
公开(公告)号：US08608422B2
公开(公告)日：2013-12-17
申请号：US10959197
申请日：2004-10-07
申请人： Tsuyoshi Moriya , Hiroshi Nagaike , Teruyuki Hayashi , Kaoru Fujihara
发明人： Tsuyoshi Moriya , Hiroshi Nagaike , Teruyuki Hayashi , Kaoru Fujihara
IPC分类号： H01L21/677 , H01L21/67 , C23C16/00
CPC分类号： H01L21/67069 , H01J2237/0048 , H01L21/67028
摘要： In order to prevent particles within a unit from sticking to a substrate in a substrate processing process, an ion generator charges the particles. At the same time, a direct current voltage of the same polarity as the charged polarity of the particles is applied from a direct current power source to the substrate. In order to prevent generation of particles when producing gas plasma, a high-frequency voltage is applied to the upper and lower electrodes at multiple stages to produce plasma. In other words, at a first step, a minimum high-frequency voltage at which plasma can be ignited is applied to the upper and lower electrodes, thereby producing a minimum plasma. Thereafter, the applied voltage is increased in stages to produce predetermined plasma.
摘要翻译：为了防止单元中的颗粒在基板处理工艺中粘附到基板上，离子发生器对颗粒进行充电。同时，从直流电源向衬底施加与粒子的带电极性相同极性的直流电压。为了防止在产生气体等离子体时产生颗粒，在多个阶段向上下电极施加高频电压以产生等离子体。换句话说，在第一步骤中，将等离子体可点燃的最小高频电压施加到上电极和下电极，从而产生最小等离子体。此后，施加的电压分级地增加以产生预定的等离子体。

44. 发明授权

US08021623B2 Examination method and examination assistant device for quartz product of semiconductor processing apparatus 有权
标题翻译：半导体加工设备石英制品检验方法及检验辅助装置
公开(公告)号：US08021623B2
公开(公告)日：2011-09-20
申请号：US10574286
申请日：2004-09-06
申请人： Masayuki Oikawa , Katsuhiko Anbai , Nobuhiro Takahashi , Teruyuki Hayashi
发明人： Masayuki Oikawa , Katsuhiko Anbai , Nobuhiro Takahashi , Teruyuki Hayashi
IPC分类号： G01N1/32 , H01L21/00
CPC分类号： H01L21/67253 , G01N1/32 , H01L21/67288 , H01L21/67303 , H01L21/67326
摘要： An examination assistant device (3) is used for examination in which a process solution containing an etching solution is held in contact with an examination objective portion of a quartz pole member (21) of a semiconductor processing apparatus, and then the process solution is analyzed to identify a metal impurity contained in the examination objective portion. The pole member (21) includes a pair of concave portions (22) disposed one on either side of the examination objective portion. The examination assistant device (3) includes a pair of end plates (32) configured to engage with the pair of concave portions, a frame (30) connecting the pair of end plates, and a solution receiver (31) disposed between the pair of end plates. The solution receiver (31) has dimensions to store the process solution and hold the process solution in contact with the examination objective portion.
摘要翻译：使用检查辅助装置（3），其中含有蚀刻液的处理液与半导体处理装置的石英杆部件（21）的检查对象部分保持接触，然后分析处理液以识别包含在检查对象部分中的金属杂质。极构件（21）包括一对设置在检查对象部分两侧的凹部（22）。检查辅助装置（3）包括一对端板（32），其构造成与所述一对凹部接合，连接所述一对端板的框架（30）和设置在所述一对端板之间的溶液接收器（31）端板。解决方案接收器（31）具有存储处理溶液并保持处理溶液与检查对象部分接触的尺寸。

45. 发明申请

US20100043820A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 失效
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20100043820A1
公开(公告)日：2010-02-25
申请号：US12443484
申请日：2007-10-01
申请人： Shigeru Kawamura , Teruyuki Hayashi
发明人： Shigeru Kawamura , Teruyuki Hayashi
IPC分类号： C25F1/00 , B08B9/00
CPC分类号： H01L21/02063 , H01J37/32862 , H01L21/02071 , H01L21/76814 , H01L21/76825 , H01L21/76828
摘要： Disclosed is a substrate treatment method intended for a substrate having, on its surface, a composite product of an inorganic material containing silicon oxide and an organic material containing carbon and fluorine. The method comprises: an ultraviolet ray treatment step for irradiating the surface of the substrate with ultraviolet ray to remove a part of the organic material; a hydrogen fluoride processing step which is conducted after the ultraviolet ray processing step and which is for supplying a steam of hydrogen fluoride onto the surface of the substrate to remove at least a part of the inorganic material; and a heating processing step which is conducted after the ultraviolet ray processing step and which is for heating the substrate to cause the shrinkage of a part of the organic material that remains unremoved.
摘要翻译：公开了用于其表面上具有含有氧化硅的无机材料和含有碳和氟的有机材料的复合产品的基板的基板处理方法。该方法包括：紫外线处理步骤，用紫外线照射基板的表面以去除部分有机材料; 氟化氢处理步骤，其在紫外线处理步骤之后进行，用于将氟化氢蒸汽供给至基材表面以除去至少一部分无机材料; 以及加热处理步骤，其在紫外线处理步骤之后进行，并且用于加热基板以使部分有机材料的收缩保持未被除去。

46. 发明申请

US20050087136A1 Particle sticking prevention apparatus and plasma processing apparatus 有权
标题翻译：防尘装置和等离子体处理装置
公开(公告)号：US20050087136A1
公开(公告)日：2005-04-28
申请号：US10959197
申请日：2004-10-07
申请人： Tsuyoshi Moriya , Hiroshi Nagaike , Teruyuki Hayashi , Kaoru Fujihara
发明人： Tsuyoshi Moriya , Hiroshi Nagaike , Teruyuki Hayashi , Kaoru Fujihara
IPC分类号： B65G49/06 , C23C16/00 , H01L21/00 , H01L21/30 , H01L21/68
CPC分类号： H01L21/67069 , H01J2237/0048 , H01L21/67028
摘要： In order to prevent particles within a unit from sticking to a substrate in a substrate processing process, an ion generator charges the particles. At the same time, a direct current voltage of the same polarity as the charged polarity of the particles is applied from a direct current power source to the substrate. In order to prevent generation of particles when producing gas plasma, a high-frequency voltage is applied to the upper and lower electrodes at multiple stages to produce plasma. In other words, at a first step, a minimum high-frequency voltage at which plasma can be ignited is applied to the upper and lower electrodes, thereby producing a minimum plasma. Thereafter, the applied voltage is increased in stages to produce predetermined plasma.
摘要翻译：为了防止单元中的颗粒在基板处理工艺中粘附到基板上，离子发生器对颗粒进行充电。同时，从直流电源向衬底施加与粒子的带电极性相同极性的直流电压。为了防止在产生气体等离子体时产生颗粒，在多个阶段向上下电极施加高频电压以产生等离子体。换句话说，在第一步骤中，将等离子体可点燃的最小高频电压施加到上电极和下电极，从而产生最小等离子体。此后，施加的电压分级地增加以产生预定的等离子体。

47. 发明授权

US06774200B2 Silsesquioxane polymer molding and method of preparing same 失效
标题翻译：倍半硅氧烷聚合物成型及其制备方法
公开(公告)号：US06774200B2
公开(公告)日：2004-08-10
申请号：US10084456
申请日：2002-02-28
申请人： Toshiaki Kobayashi , Teruyuki Hayashi , Masato Tanaka
发明人： Toshiaki Kobayashi , Teruyuki Hayashi , Masato Tanaka
IPC分类号： C08G7712
CPC分类号： C09D183/14 , C08G77/12 , C08G77/50 , C08G77/70 , C08L83/04 , C08L83/00
摘要： A molding obtained by heating a hydrosilylated polymer at a temperature higher than the softening point or melting point thereof. The hydrosilylated polymer is obtained by reacting at least one hydridosilsesquioxane compound of the following formula (1): (HSiO3/2)n (1) wherein n is an integer of 4-1000, with at least one divinylsiloxane compound of the following formula (2): CH2═CH—SiR2—O—(SiR2.O)q—(SiR′2.O)q′—SiR2—CH═CH2 (2) wherein R and R′ are independently selected from alkyl groups, substituted alkyl groups, aryl groups and substituted aryl groups, and q and q′ are each an integer of 0 or more.
摘要翻译：通过在高于其软化点或熔点的温度下加热氢化硅烷化聚合物获得的模制品。所述氢化硅烷化聚合物通过使至少一种下式（1）的至少一种氢嘧啶倍半硅氧烷化合物（其中n为4-1000的整数）与至少一种下式（2）的二乙烯基硅氧烷化合物反应而获得：其中R和R' 独立地选自烷基，取代的烷基，芳基和取代的芳基，q和q'各自为0以上的整数。

48. 发明申请

US20090218483A1 Analyzing Method and Analyzing Apparatus 有权
标题翻译：分析方法和分析仪器
公开(公告)号：US20090218483A1
公开(公告)日：2009-09-03
申请号：US12280845
申请日：2007-06-21
申请人： Kazuya Dobashi , Shigeru Kawamura , Kohei Tsugita , Teruyuki Hayashi
发明人： Kazuya Dobashi , Shigeru Kawamura , Kohei Tsugita , Teruyuki Hayashi
IPC分类号： B01D59/44 , H01J49/00 , A61N5/00
CPC分类号： H01L21/67207 , G01N21/3103 , G01N21/68 , H01J49/0463
摘要： An analysis apparatus includes a first process part for removing a film formed on a substrate by irradiating the film with ultraviolet light, a second process part for providing a solution onto a surface of the substrate for dissolving an object being analyzed on the substrate, and a third process part for analyzing the object being analyzed in the solution that is used in the second step.
摘要翻译：分析装置包括：第一处理部，用于通过用紫外光照射膜去除在基板上形成的膜;第二处理部，用于在基板的表面上提供溶液，用于将待分析的物体溶解在基板上;以及用于分析在第二步骤中使用的解决方案中被分析的对象的第三处理部分。

49. 发明授权

US06949621B2 Polymer containing 9-oxo-9-phosphafluorene-2,7-diyl skeleton in backbone and process for producing the same 失效
标题翻译：在骨架中含有9-氧代-9-磷酸芴-2,7-二基骨架的聚合物及其制备方法
公开(公告)号：US06949621B2
公开(公告)日：2005-09-27
申请号：US10399234
申请日：2002-02-27
申请人： Yoshikazu Makioka , Masato Tanaka , Teruyuki Hayashi
发明人： Yoshikazu Makioka , Masato Tanaka , Teruyuki Hayashi
IPC分类号： C07F9/6568 , C08G61/12 , C09K9/02 , C09K11/06 , H01L51/30 , C08G79/02 , C08G79/04
CPC分类号： C09K11/06 , C07F9/65685 , C08G61/12 , C08G61/121 , C08G61/122 , C08G61/128 , C09K9/02 , C09K2211/1416 , C09K2211/1491 , H01L51/0035
摘要： A polymer containing in the backbone a 9-oxo-9-phosphafluorene-2,7-diyl skeleton or a combination of the skeleton with a vinylene skeleton or arylene skeleton. The polymer is utilizable as, e.g., a component of a luminescent element or electrochromic element.The polymer is obtained by subjecting a 2,7-dihalo-9-oxo-9-phosphafluorene to polycondensation with dehalogenation, or to reaction with arylenebisboronic acid and polycondensation, or to polycondensation with an olefin.
摘要翻译：在骨架中含有9-氧代-9-磷杂芴-2,7-二基骨架或骨架与亚乙烯基骨架或亚芳基骨架的组合的聚合物。聚合物可用作例如发光元件或电致变色元件的组分。聚合物是通过使2,7-二卤代-9-氧代-9-磷酰芴与脱卤缩聚缩合或与亚芳基双硼酸进行缩聚反应或缩聚，或与烯烃进行缩聚而获得的。

50. 发明授权

US08945412B2 Substrate cleaning apparatus, substrate cleaning method, and substrate processing apparatus 有权
标题翻译：基板清洗装置，基板清洗方法及基板处理装置
公开(公告)号：US08945412B2
公开(公告)日：2015-02-03
申请号：US13558876
申请日：2012-07-26
申请人： Shigeru Kawamura , Teruyuki Hayashi
发明人： Shigeru Kawamura , Teruyuki Hayashi
IPC分类号： B08B7/04 , B08B5/04 , H01L21/02 , H01L21/67
CPC分类号： H01L21/02087 , H01L21/67115 , Y10S134/902
摘要： A substrate cleaning apparatus is capable of cleaning an entire periphery of a substrate end portion at a time by simple control without polishing the end portion and without generating plasma. The substrate cleaning apparatus has a mounting table 204 on which a wafer W is placed, a heating unit 210 for heating a wafer end portion, ultraviolet application unit 220 for applying ultraviolet to the wafer end portion, and a gas flow forming unit 230 for forming a gas flow on the surface of the wafer end portion. The heating unit, the ultraviolet application unit, and the gas flow forming unit are disposed near the wafer end portion so as to surround the wafer.
摘要翻译：基板清洗装置能够通过简单的控制一次清洗基板端部的整个周边，而不需要对端部进行研磨而不产生等离子体。基板清洗装置具有放置晶片W的安装台204，加热晶片端部的加热单元210，向晶片端部施加紫外线的紫外线施加单元220以及用于形成晶片端部表面上的气流。加热单元，紫外线施加单元和气体流动形成单元设置在晶片端部附近以包围晶片。

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