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1. 发明授权

US08647440B2 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08647440B2
公开(公告)日：2014-02-11
申请号：US12443484
申请日：2007-10-01
申请人： Shigeru Kawamura , Teruyuki Hayashi
发明人： Shigeru Kawamura , Teruyuki Hayashi
IPC分类号： B08B6/00 , B08B3/00 , B08B5/00
CPC分类号： H01L21/02063 , H01J37/32862 , H01L21/02071 , H01L21/76814 , H01L21/76825 , H01L21/76828
摘要： Disclosed is a substrate treatment method intended for a substrate having, on its surface, a composite product of an inorganic material containing silicon oxide and an organic material containing carbon and fluorine. The method comprises: an ultraviolet ray treatment step for irradiating the surface of the substrate with ultraviolet ray to remove a part of the organic material; a hydrogen fluoride processing step which is conducted after the ultraviolet ray processing step and which is for supplying a steam of hydrogen fluoride onto the surface of the substrate to remove at least a part of the inorganic material; and a heating processing step which is conducted after the ultraviolet ray processing step and which is for heating the substrate to cause the shrinkage of a part of the organic material that remains unremoved.
摘要翻译：公开了用于其表面上具有含有氧化硅的无机材料和含有碳和氟的有机材料的复合产品的基板的基板处理方法。该方法包括：紫外线处理步骤，用紫外线照射基板的表面以去除部分有机材料; 氟化氢处理步骤，其在紫外线处理步骤之后进行，用于将氟化氢蒸汽供给至基材表面以除去至少一部分无机材料; 以及加热处理步骤，其在紫外线处理步骤之后进行，并且用于加热基板以使部分有机材料的收缩保持未被除去。

2. 发明申请

US20080230096A1 SUBSTRATE CLEANING DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板清洁装置和基板处理装置
公开(公告)号：US20080230096A1
公开(公告)日：2008-09-25
申请号：US12052065
申请日：2008-03-20
申请人： Shigeru KAWAMURA , Teruyuki Hayashi
发明人： Shigeru KAWAMURA , Teruyuki Hayashi
IPC分类号： B08B7/00 , B08B5/00
CPC分类号： H01L21/67115 , H01L21/67023
摘要： The device forms a flow of a back-side gas over a back-side surface of the end portion of the wafer undergoing a cleaning process executed by radiating an electromagnetic wave such as an ultraviolet ray onto the end portion of the wafer. During the cleaning process, a flow of front-side gas directed along a direction matching the direction of the back-side gas is also formed over the front-side surface of the end portion of the wafer. The flow velocity of the back-side gas is set higher than the flow velocity of the front-side gas. As a result, a descending gas current is created to flow from the wafer front side toward the wafer back side at a gap between the wafer end portion and a partitioning plate, which makes it possible to reliably prevent an active species formed on the back side of the wafer end portion from reaching over to the wafer front side.
摘要翻译：该装置在经过通过将诸如紫外线的电磁波辐射照射到晶片的端部执行的清洁处理的晶片的端部的背面表面上形成后侧气体的流动。在清洗过程中，沿着与背面气体的方向一致的方向引导的前侧气体的流动也形成在晶片的端部的前侧表面上。背面气体的流速被设定为高于前侧气体的流速。结果，在晶片端部和分隔板之间的间隙处产生从晶片正面朝向晶片背面侧流动的下降气流，这使得可以可靠地防止形成在背面的活性物质的晶片端部分到达晶片正面。

3. 发明申请

US20100043820A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 失效
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20100043820A1
公开(公告)日：2010-02-25
申请号：US12443484
申请日：2007-10-01
申请人： Shigeru Kawamura , Teruyuki Hayashi
发明人： Shigeru Kawamura , Teruyuki Hayashi
IPC分类号： C25F1/00 , B08B9/00
CPC分类号： H01L21/02063 , H01J37/32862 , H01L21/02071 , H01L21/76814 , H01L21/76825 , H01L21/76828
摘要： Disclosed is a substrate treatment method intended for a substrate having, on its surface, a composite product of an inorganic material containing silicon oxide and an organic material containing carbon and fluorine. The method comprises: an ultraviolet ray treatment step for irradiating the surface of the substrate with ultraviolet ray to remove a part of the organic material; a hydrogen fluoride processing step which is conducted after the ultraviolet ray processing step and which is for supplying a steam of hydrogen fluoride onto the surface of the substrate to remove at least a part of the inorganic material; and a heating processing step which is conducted after the ultraviolet ray processing step and which is for heating the substrate to cause the shrinkage of a part of the organic material that remains unremoved.
摘要翻译：公开了用于其表面上具有含有氧化硅的无机材料和含有碳和氟的有机材料的复合产品的基板的基板处理方法。该方法包括：紫外线处理步骤，用紫外线照射基板的表面以去除部分有机材料; 氟化氢处理步骤，其在紫外线处理步骤之后进行，用于将氟化氢蒸汽供给至基材表面以除去至少一部分无机材料; 以及加热处理步骤，其在紫外线处理步骤之后进行，并且用于加热基板以使部分有机材料的收缩保持未被除去。

4. 发明申请

US20090218483A1 Analyzing Method and Analyzing Apparatus 有权
标题翻译：分析方法和分析仪器
公开(公告)号：US20090218483A1
公开(公告)日：2009-09-03
申请号：US12280845
申请日：2007-06-21
申请人： Kazuya Dobashi , Shigeru Kawamura , Kohei Tsugita , Teruyuki Hayashi
发明人： Kazuya Dobashi , Shigeru Kawamura , Kohei Tsugita , Teruyuki Hayashi
IPC分类号： B01D59/44 , H01J49/00 , A61N5/00
CPC分类号： H01L21/67207 , G01N21/3103 , G01N21/68 , H01J49/0463
摘要： An analysis apparatus includes a first process part for removing a film formed on a substrate by irradiating the film with ultraviolet light, a second process part for providing a solution onto a surface of the substrate for dissolving an object being analyzed on the substrate, and a third process part for analyzing the object being analyzed in the solution that is used in the second step.
摘要翻译：分析装置包括：第一处理部，用于通过用紫外光照射膜去除在基板上形成的膜;第二处理部，用于在基板的表面上提供溶液，用于将待分析的物体溶解在基板上;以及用于分析在第二步骤中使用的解决方案中被分析的对象的第三处理部分。

5. 发明授权

US08945412B2 Substrate cleaning apparatus, substrate cleaning method, and substrate processing apparatus 有权
标题翻译：基板清洗装置，基板清洗方法及基板处理装置
公开(公告)号：US08945412B2
公开(公告)日：2015-02-03
申请号：US13558876
申请日：2012-07-26
申请人： Shigeru Kawamura , Teruyuki Hayashi
发明人： Shigeru Kawamura , Teruyuki Hayashi
IPC分类号： B08B7/04 , B08B5/04 , H01L21/02 , H01L21/67
CPC分类号： H01L21/02087 , H01L21/67115 , Y10S134/902
摘要： A substrate cleaning apparatus is capable of cleaning an entire periphery of a substrate end portion at a time by simple control without polishing the end portion and without generating plasma. The substrate cleaning apparatus has a mounting table 204 on which a wafer W is placed, a heating unit 210 for heating a wafer end portion, ultraviolet application unit 220 for applying ultraviolet to the wafer end portion, and a gas flow forming unit 230 for forming a gas flow on the surface of the wafer end portion. The heating unit, the ultraviolet application unit, and the gas flow forming unit are disposed near the wafer end portion so as to surround the wafer.
摘要翻译：基板清洗装置能够通过简单的控制一次清洗基板端部的整个周边，而不需要对端部进行研磨而不产生等离子体。基板清洗装置具有放置晶片W的安装台204，加热晶片端部的加热单元210，向晶片端部施加紫外线的紫外线施加单元220以及用于形成晶片端部表面上的气流。加热单元，紫外线施加单元和气体流动形成单元设置在晶片端部附近以包围晶片。

6. 发明授权

US07923680B2 Analysis method and analysis apparatus 有权
标题翻译：分析方法和分析仪器
公开(公告)号：US07923680B2
公开(公告)日：2011-04-12
申请号：US12280845
申请日：2007-06-21
申请人： Kazuya Dobashi , Shigeru Kawamura , Kohei Tsugita , Teruyuki Hayashi
发明人： Kazuya Dobashi , Shigeru Kawamura , Kohei Tsugita , Teruyuki Hayashi
IPC分类号： H01J49/00
CPC分类号： H01L21/67207 , G01N21/3103 , G01N21/68 , H01J49/0463
摘要： An analysis apparatus includes a first process part for removing a film formed on a substrate by irradiating the film with ultraviolet light, a second process part for providing a solution onto a surface of the substrate for dissolving an object being analyzed on the substrate, and a third process part for analyzing the object being analyzed in the solution that is used in the second step.
摘要翻译：分析装置包括：第一处理部，用于通过用紫外光照射膜去除在基板上形成的膜;第二处理部，用于在基板的表面上提供溶液，用于将待分析的物体溶解在基板上;以及用于分析在第二步骤中使用的解决方案中被分析的对象的第三处理部分。

7. 发明申请

US20090065027A1 SUBSTRATE CLEANING APPARATUS, SUBSTRATE CLEANING METHOD, AND SUBSTRATE TREATMENT APPARATUS 审中-公开
标题翻译：基板清洁装置，基板清洁方法和基板处理装置
公开(公告)号：US20090065027A1
公开(公告)日：2009-03-12
申请号：US12297746
申请日：2007-04-04
申请人： Shigeru Kawamura , Teruyuki Hayashi
发明人： Shigeru Kawamura , Teruyuki Hayashi
IPC分类号： B08B7/00
CPC分类号： H01L21/02087 , H01L21/67115 , Y10S134/902
摘要： A substrate cleaning apparatus is capable of cleaning an entire periphery of a substrate end portion at a time by simple control without polishing the end portion and without generating plasma. The substrate cleaning apparatus has a mounting table 204 on which a wafer W is placed, a heating unit 210 for heating a wafer end portion, ultraviolet application unit 220 for applying ultraviolet to the wafer end portion, and a gas flow forming unit 230 for forming a gas flow on the surface of the wafer end portion. The heating unit, the ultraviolet application unit, and the gas flow forming unit are disposed near the wafer end portion so as to surround the wafer.
摘要翻译：基板清洗装置能够通过简单的控制一次清洗基板端部的整个周边，而不需要对端部进行研磨而不产生等离子体。基板清洗装置具有放置晶片W的安装台204，加热晶片端部的加热单元210，向晶片端部施加紫外线的紫外线施加单元220，以及用于形成晶片端部表面上的气流。加热单元，紫外线施加单元和气体流动形成单元设置在晶片端部附近以包围晶片。

8. 发明授权

US08950999B2 Substrate processing apparatus and particle adhesion preventing method 有权
标题翻译：基板处理装置和颗粒附着防止方法
公开(公告)号：US08950999B2
公开(公告)日：2015-02-10
申请号：US12525314
申请日：2008-01-31
申请人： Akitake Tamura , Teruyuki Hayashi
发明人： Akitake Tamura , Teruyuki Hayashi
IPC分类号： H01L21/677 , H01L21/67
CPC分类号： H01J37/34 , H01J37/32522 , H01J37/3476 , H01J2237/332 , H01J2237/334 , H01L21/67248 , H01L21/67766 , H01L21/67772 , H01L21/67778
摘要： Any particle adhesion onto the surface of a substrate to be processed is prevented. There is provided a substrate processing apparatus characterized by including a transfer chamber for, via a gate to which a substrate accommodating container for accommodation of the substrate is set, performing transfer of the substrate between the same and the substrate accommodating container, a processing chamber for applying a specific process to the substrate, a load-lock chamber for linking the processing chamber with the transfer chamber, and a temperature control unit for at the stage of transferring the substrate into at least one of the transfer chamber and the load-lock chamber, so as for the temperature of the substrate just before the transfer thereof to be higher than the temperature of the interior of the chamber, into which the substrate will be transferred, controlling at least one of the temperature of the substrate and the temperature of the interior of the chamber.
摘要翻译：防止任何颗粒附着在待处理基材的表面上。提供了一种基板处理装置，其特征在于包括：传送室，用于经由设置用于容纳基板的基板容纳容器的栅极，在其之间进行基板与基板容纳容器的传送;处理室，对基板施加特定的处理，用于将处理室与传送室连接的加载锁定室以及用于在将基板转移到传送室和装载锁定室中的至少一个的阶段的温度控制单元，因为刚好在其转移之前的衬底的温度高于将被转移到其中的衬底内部的温度，控制衬底的温度和温度的至少一个室内

9. 发明申请

US20120031339A1 DEPOSITION HEAD AND FILM FORMING APPARATUS 审中-公开
标题翻译：沉积头和成膜装置
公开(公告)号：US20120031339A1
公开(公告)日：2012-02-09
申请号：US13262335
申请日：2010-04-02
申请人： Yuji Ono , Tomohiko Edura , Teruyuki Hayashi , Akitake Tamura , Misako Saito
发明人： Yuji Ono , Tomohiko Edura , Teruyuki Hayashi , Akitake Tamura , Misako Saito
IPC分类号： C23C16/455
CPC分类号： C23C14/12 , C23C14/24 , H01L51/001 , H01L51/50
摘要： There is provided a deposition head capable of discharging a material gas having a uniform flow rate and equi-thermal property from each component in a large-sized substrate as well as a conventional small-sized one for forming a uniform thin film. A deposition apparatus including the deposition head is also provided. The deposition head is provided within a deposition apparatus for forming a thin film on a substrate and configured to discharge a material gas toward the substrate. The deposition head includes an outer casing, and an inner casing provided within the outer casing and into which the material gas is introduced. In the inner casing, an opening configured to discharge the material gas toward the substrate is formed, and a heater configured to heat the material gas is provided at an outer surface of the outer casing or in a space between the outer casing and the inner casing.
摘要翻译：提供一种沉积头，其能够在大尺寸基板中排出具有均匀流速和等热特性的材料气体，以及用于形成均匀薄膜的常规小尺寸基板。还提供了包括沉积头的沉积设备。沉积头设置在用于在衬底上形成薄膜并用于将材料气体朝向衬底排出的沉积设备中。沉积头包括外壳和设置在外壳内并且材料气体被引入的内壳。在内壳体中，形成有将材料气体朝向基板排出的开口，在外壳的外表面或外壳与内壳之间的空间内设置加热材料气体的加热器。

10. 发明申请

US20100111648A1 SUBSTRATE PROCESSING APPARATUS AND PARTICLE ADHESION PREVENTING METHOD 有权
标题翻译：基板加工装置和颗粒粘合防止方法
公开(公告)号：US20100111648A1
公开(公告)日：2010-05-06
申请号：US12525314
申请日：2008-01-31
申请人： Akitake Tamura , Teruyuki Hayashi
发明人： Akitake Tamura , Teruyuki Hayashi
IPC分类号： H01L21/677 , H01L21/673 , H01L21/67 , F28F27/00 , G05D23/00
CPC分类号： H01J37/34 , H01J37/32522 , H01J37/3476 , H01J2237/332 , H01J2237/334 , H01L21/67248 , H01L21/67766 , H01L21/67772 , H01L21/67778
摘要： Any particle adhesion onto the surface of a substrate to be processed is prevented. There is provided a substrate processing apparatus characterized by including a transfer chamber for, via a gate to which a substrate accommodating container for accommodation of the substrate is set, performing transfer of the substrate between the same and the substrate accommodating container, a processing chamber for applying a specific process to the substrate, a load-lock chamber for linking the processing chamber with the transfer chamber, and a temperature control unit for at the stage of transferring the substrate into at least one of the transfer chamber and the load-lock chamber, so as for the temperature of the substrate just before the transfer thereof to be higher than the temperature of the interior of the chamber, into which the substrate will be transferred, controlling at least one of the temperature of the substrate and the temperature of the interior of the chamber.
摘要翻译：防止任何颗粒附着在待处理基材的表面上。提供了一种基板处理装置，其特征在于包括：传送室，用于经由设置用于容纳基板的基板容纳容器的栅极，在其之间进行基板与基板容纳容器的传送;处理室，对基板施加特定的处理，用于将处理室与传送室连接的加载锁定室以及用于在将基板转移到传送室和装载锁定室中的至少一个的阶段的温度控制单元，因为刚好在其转移之前的衬底的温度高于将被转移到其中的衬底内部的温度，控制衬底的温度和温度的至少一个室内

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