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41. 发明授权

US06555442B1 Method of forming shallow trench isolation with rounded corner and divot-free by using disposable spacer 有权
标题翻译：通过使用一次性间隔件形成具有圆角和无凹槽的浅沟槽隔离的方法
公开(公告)号：US06555442B1
公开(公告)日：2003-04-29
申请号：US10042075
申请日：2002-01-08
申请人： Chih-Yang Pai , Chih-Hsing Yu , Yeur-Luen Tu , Chia-Shiung Tsai , Min-Hwa Chi
发明人： Chih-Yang Pai , Chih-Hsing Yu , Yeur-Luen Tu , Chia-Shiung Tsai , Min-Hwa Chi
IPC分类号： H01L2176
CPC分类号： H01L21/76235
摘要： A method of fabricating an STI, comprising the following steps. A silicon structure having a pad oxide layer formed thereover is provided. An undoped poly buffer layer is formed over the pad oxide layer. A hard mask layer is formed over the undoped poly buffer layer. The hard mask layer, the undoped poly buffer layer and the pad oxide layer are patterned to form an opening exposing a portion of the silicon structure within an active area. The opening having exposed side walls. Inorganic spacers are formed over the exposed side walls. Using the patterned hard mask layer and the spacers as hard masks, the silicon structure is etched to form an STI opening within the active area. The inorganic spacers are removed exposing the upper corners of the STI opening. Using an oxidation process, a liner oxide layer is formed within the STI opening, over the upper corners of the STI opening and at least the patterned undoped poly buffer layer exposed by the removal of the inorganic spacers. An STI oxide layer is formed over the patterned hard mask layer, filling the liner oxide layer lined STI opening. The STI oxide layer is planarized and the patterned hard mask, the patterned undoped poly buffer layer and the patterned pad oxide layer are removed to fabricate the STI having rounded corners and without substantial divots.
摘要翻译：一种制造STI的方法，包括以下步骤。提供了具有形成在其上的衬垫氧化物层的硅结构。在衬垫氧化物层上形成未掺杂的多晶缓冲层。在未掺杂的多缓冲层上形成硬掩模层。将硬掩模层，未掺杂的多晶缓冲层和焊盘氧化物层图案化以形成暴露有源区域内的硅结构的一部分的开口。开口具有暴露的侧壁。在暴露的侧壁上形成无机间隔物。使用图案化的硬掩模层和间隔物作为硬掩模，蚀刻硅结构以在有效区域内形成STI开口。去除暴露STI开口的上角的无机间隔物。使用氧化工艺，在STI开口内，在STI开口的上角上形成衬里氧化物层，并且至少通过去除无机间隔物露出图案化的未掺杂多缓冲层。在图案化的硬掩模层之上形成STI氧化物层，填充衬里氧化物层衬里的STI开口。将STI氧化物层平坦化，并且去除图案化的硬掩模，图案化的未掺杂多缓冲层和图案化的衬垫氧化物层，以制造具有圆角并且没有实质上的纹理的STI。

42. 发明授权

US06486529B2 Structure of merged vertical capacitor inside spiral conductor for RF and mixed-signal applications 有权
公开(公告)号：US06486529B2
公开(公告)日：2002-11-26
申请号：US10066512
申请日：2002-02-04
申请人： Min-Hwa Chi , Chia-Shiung Tsai , Yeur-Luen Tu
发明人： Min-Hwa Chi , Chia-Shiung Tsai , Yeur-Luen Tu
IPC分类号： H01L218242
CPC分类号： H01L23/5223 , H01L23/5227 , H01L27/08 , H01L28/10 , H01L28/91 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A new method and structure is provided for the simultaneous creation of inductive and capacitive components in a monolithic substrate. The invention provides a method and structure whereby a vertical spiral inductor is created on the surface of a substrate. Multiple capacitors are created inside the coils of the vertical spiral conductor. A base layer of dielectric is deposited over the surface of a semiconductor substrate, contact plugs are provided in the base layer of dielectric. Multiple layers of dielectric are deposited over the surface of the base layer, layers of coils are created in the multiple layers of dielectric. Vias are provided in the layer of dielectric to interconnect overlying coils of the spiral inductor. An etch stop layer is deposited on the surface of the upper layer of dielectric. At least two openings are etched in the multiple layers of dielectric, these at least two openings are surrounded by the coils of the spiral inductor and align with the contact plugs provided in the base layers. Spacers are formed on the sidewalls of the openings, the bottom electrode layer, dielectric layer and top electrode layer of the at least two capacitors are deposited over the spacers. The openings are filled with a conductive material, the surface of the conductive material is polished down to the surface of the etch stop.

43. 发明授权

US08932900B2 Phase change memory and method of fabricating same 有权
标题翻译：相变存储器及其制造方法
公开(公告)号：US08932900B2
公开(公告)日：2015-01-13
申请号：US13216369
申请日：2011-08-24
申请人： Tsun-Kai Tsao , Ming-Huei Shen , Shih-Chang Liu , Yeur-Luen Tu , Chia-Shiung Tsai
发明人： Tsun-Kai Tsao , Ming-Huei Shen , Shih-Chang Liu , Yeur-Luen Tu , Chia-Shiung Tsai
IPC分类号： H01L21/8239 , H01L45/00
CPC分类号： H01L45/06 , H01L45/144 , H01L45/1683
摘要： A fine pitch phase change random access memory (“PCRAM”) design and method of fabricating same are disclosed. One embodiment is a phase change memory (“PCM”) cell comprising a spacer defining a rectangular reaction area and a phase change material layer disposed within the reaction area. The PCM cell further comprises a protection layer disposed over the GST film layer and within the area defined by the spacer; and a capping layer disposed over the protection layer and the spacer.
摘要翻译：公开了一种细间距相变随机存取存储器（“PCRAM”）设计及其制造方法。一个实施例是相变存储器（“PCM”）单元，其包括限定矩形反应区域的间隔区和设置在反应区域内的相变材料层。 PCM单元进一步包括设置在GST膜层之上并在由间隔物限定的区域内的保护层; 以及设置在所述保护层和间隔物上方的覆盖层。

44. 发明授权

US08851133B2 Method and apparatus of holding a device 有权
标题翻译：握持装置的方法和装置
公开(公告)号：US08851133B2
公开(公告)日：2014-10-07
申请号：US12414861
申请日：2009-03-31
申请人： Martin Liu , Chung-Yi Yu , Che Ying Hsu , Yeur-Luen Tu , Da-Hsiang Chou , Chia-Shiung Tsai
发明人： Martin Liu , Chung-Yi Yu , Che Ying Hsu , Yeur-Luen Tu , Da-Hsiang Chou , Chia-Shiung Tsai
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/306 , H01L21/683
CPC分类号： H01L21/6838 , H01L21/304
摘要： Provided is an apparatus and a method of holding a device. The apparatus includes a wafer chuck having first and second holes that extend therethrough, and a pressure control structure that can independently and selectively vary a fluid pressure in each of the first and second holes between pressures above and below an ambient pressure. The method includes providing a wafer chuck having first and second holes that extend therethrough, and independently and selectively varying a fluid pressure in each of the first and second holes between pressures above and below an ambient pressure.
摘要翻译：提供了一种保持装置的装置和方法。该装置包括具有穿过其延伸的第一和第二孔的晶片卡盘，以及压力控制结构，其能够在高于和低于环境压力的压力之间独立地和选择性地改变在第一和第二孔中的每一个中的流体压力。该方法包括提供具有延伸穿过其中的第一和第二孔的晶片卡盘，并且在高于和低于环境压力的压力之间独立地和选择性地改变在每个第一和第二孔中的流体压力。

45. 发明授权

US08735207B2 Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array 有权
标题翻译：在背面照明（BSI）互补金属氧化物半导体（CMOS）传感器阵列中避免固定模式噪声的方法
公开(公告)号：US08735207B2
公开(公告)日：2014-05-27
申请号：US13079995
申请日：2011-04-05
申请人： Chung Chien Wang , Yeur-Luen Tu , Chia-Shiung Tsai
发明人： Chung Chien Wang , Yeur-Luen Tu , Chia-Shiung Tsai
IPC分类号： H01L31/18 , H01L21/306 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/14687 , H01L27/14698 , Y10T29/41
摘要： The present disclosure provides one embodiment of a method. The method includes providing a semiconductor substrate having a front side and a backside, wherein the front side of the semiconductor substrate includes a plurality of backside illuminated imaging sensors; bonding a carrier substrate to the semiconductor substrate from the front side; thinning the semiconductor substrate from the backside; performing an ion implantation to the semiconductor substrate from the backside; performing a laser annealing process to the semiconductor substrate from the backside; and thereafter, performing a polishing process to the semiconductor substrate from the backside.
摘要翻译：本公开提供了一种方法的实施例。该方法包括提供具有正面和背面的半导体衬底，其中半导体衬底的前侧包括多个背面照明成像传感器; 从前侧将载体衬底接合到半导体衬底; 从背面稀释半导体衬底; 从背面对半导体衬底进行离子注入; 从背面对半导体衬底进行激光退火处理; 然后从背面对半导体基板进行研磨处理。

46. 发明授权

US08610227B2 Formation of embedded micro-lens 有权
标题翻译：嵌入式微透镜的形成
公开(公告)号：US08610227B2
公开(公告)日：2013-12-17
申请号：US12903871
申请日：2010-10-13
申请人： Shih Pei Chou , Shih-Chang Liu , Yeur-Luen Tu , Chia-Shiung Tsai
发明人： Shih Pei Chou , Shih-Chang Liu , Yeur-Luen Tu , Chia-Shiung Tsai
IPC分类号： H01L31/0232
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14685
摘要： Provided is an image sensor device. The image sensor device includes a pixel formed in a substrate. The image sensor device includes a first micro-lens embedded in a transparent layer over the substrate. The first micro-lens has a first upper surface that has an angular tip. The image sensor device includes a color filter that is located over the transparent layer. The image sensor device includes a second micro-lens that is formed over the color filter. The second micro-lens has a second upper surface that has an approximately rounded profile. The pixel, the first micro-lens, the color filter, and the second micro-lens are all at least partially aligned with one another in a vertical direction.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括形成在基板中的像素。图像传感器装置包括嵌入在基板上的透明层中的第一微透镜。第一微透镜具有具有角尖的第一上表面。图像传感器装置包括位于透明层上方的滤色器。图像传感器装置包括形成在滤色器上的第二微透镜。第二微透镜具有第二上表面，其具有近似圆形的轮廓。像素，第一微透镜，滤色器和第二微透镜在垂直方向上至少部分地彼此对准。

47. 发明申请

US20130210188A1 Method and Apparatus for Reducing Stripe Patterns 有权
标题翻译：减少条纹图案的方法和装置
公开(公告)号：US20130210188A1
公开(公告)日：2013-08-15
申请号：US13371303
申请日：2012-02-10
申请人： Chung Chien Wang , Yeur-Luen Tu , Cheng-Ta Wu , Chia-Shiung Tsai
发明人： Chung Chien Wang , Yeur-Luen Tu , Cheng-Ta Wu , Chia-Shiung Tsai
IPC分类号： H01L21/268 , B23K26/02
CPC分类号： H01L21/268 , G01B11/14 , H01L27/1464 , H01L27/14643 , H01L27/14689
摘要： A method for reducing stripe patterns comprising receiving scattered light signals from a backside surface of a laser annealed backside illuminated image sensor wafer, generating a backside surface image based upon the scattered light signals, determining a distance between an edge of a sensor array of the laser anneal backside illuminated image sensor wafer and an adjacent boundary of a laser beam and re-calibrating the laser beam if the distance is less than a predetermined value.
摘要翻译：一种用于减少条纹图案的方法，包括从激光退火背面照射图像传感器晶片的背面接收散射光信号，基于散射光信号产生背面图像，确定激光器的传感器阵列的边缘之间的距离退火背面照射的图像传感器晶片和激光束的相邻边界，并且如果距离小于预定值则重新校准激光束。

48. 发明申请

US20130113061A1 IMAGE SENSOR TRENCH ISOLATION WITH CONFORMAL DOPING 有权
公开(公告)号：US20130113061A1
公开(公告)日：2013-05-09
申请号：US13290733
申请日：2011-11-07
申请人： Chih-Yu Lai , Yeur-Luen Tu , Chih-Hui Huang , Cheng-Ta Wu , Chia-Shiung Tsai , Luan C. Tran
发明人： Chih-Yu Lai , Yeur-Luen Tu , Chih-Hui Huang , Cheng-Ta Wu , Chia-Shiung Tsai , Luan C. Tran
IPC分类号： H01L27/146 , H01L31/18 , H01L31/0232
CPC分类号： H01L27/1463 , H01L21/02129 , H01L21/223 , H01L21/2255 , H01L21/76224 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L31/09
摘要： Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.

49. 发明申请

US20120258564A1 METHOD TO AVOID FIXED PATTERN NOISE WITHIN BACKSIDE ILLUMINATED (BSI) COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) SENSOR ARRAY 有权
标题翻译：在背光照明（BSI）补充金属氧化物半导体（CMOS）传感器阵列中避免固定图案噪声的方法
公开(公告)号：US20120258564A1
公开(公告)日：2012-10-11
申请号：US13079995
申请日：2011-04-05
申请人： Chung Chien Wang , Yeur-Luen Tu , Chia-Shiung Tsai
发明人： Chung Chien Wang , Yeur-Luen Tu , Chia-Shiung Tsai
IPC分类号： H01L31/18 , H01L21/306 , H01L21/00 , H01L21/304
CPC分类号： H01L27/1464 , H01L27/14687 , H01L27/14698 , Y10T29/41
摘要： The present disclosure provides one embodiment of a method. The method includes providing a semiconductor substrate having a front side and a backside, wherein the front side of the semiconductor substrate includes a plurality of backside illuminated imaging sensors; bonding a carrier substrate to the semiconductor substrate from the front side; thinning the semiconductor substrate from the backside; performing an ion implantation to the semiconductor substrate from the backside; performing a laser annealing process to the semiconductor substrate from the backside; and thereafter, performing a polishing process to the semiconductor substrate from the backside.
摘要翻译：本公开提供了一种方法的实施例。该方法包括提供具有正面和背面的半导体衬底，其中半导体衬底的前侧包括多个背面照明成像传感器; 从前侧将载体衬底接合到半导体衬底; 从背面稀释半导体衬底; 从背面对半导体衬底进行离子注入; 从背面对半导体衬底进行激光退火处理; 然后从背面对半导体基板进行研磨处理。

50. 发明申请

US20120091549A1 FORMATION OF EMBEDDED MICRO-LENS 有权
标题翻译：嵌入式微透镜的形成
公开(公告)号：US20120091549A1
公开(公告)日：2012-04-19
申请号：US12903871
申请日：2010-10-13
申请人： Shih Pei Chou , Shih-Chang Liu , Yeur-Luen Tu , Chia-Shiung Tsai
发明人： Shih Pei Chou , Shih-Chang Liu , Yeur-Luen Tu , Chia-Shiung Tsai
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14685
摘要： Provided is an image sensor device. The image sensor device includes a pixel formed in a substrate. The image sensor device includes a first micro-lens embedded in a transparent layer over the substrate. The first micro-lens has a first upper surface that has an angular tip. The image sensor device includes a color filter that is located over the transparent layer. The image sensor device includes a second micro-lens that is formed over the color filter. The second micro-lens has a second upper surface that has an approximately rounded profile. The pixel, the first micro-lens, the color filter, and the second micro-lens are all at least partially aligned with one another in a vertical direction.
摘要翻译：提供了一种图像传感器装置。图像传感器装置包括形成在基板中的像素。图像传感器装置包括嵌入在基板上的透明层中的第一微透镜。第一微透镜具有具有角尖的第一上表面。图像传感器装置包括位于透明层上方的滤色器。图像传感器装置包括形成在滤色器上的第二微透镜。第二微透镜具有第二上表面，其具有近似圆形的轮廓。像素，第一微透镜，滤色器和第二微透镜在垂直方向上至少部分地彼此对准。

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