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41. 发明申请

US20120133011A1 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20120133011A1
公开(公告)日：2012-05-31
申请号：US13363801
申请日：2012-02-01
申请人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida
发明人： Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14689
摘要： A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged on a first face of a first semiconductor layer, each of the pixels including a photoelectric conversion element converting light entering through a second face of the first semiconductor layer on the opposite side from the first face into a signal charge, the photoelectric conversion element having a pn junction formed with a first semiconductor region formed on the first face and a second semiconductor region formed on a surface of the first semiconductor region; pixel separating regions separating the pixels from one another and formed between the pixels, each of the pixel separating regions including a second semiconductor layer covering faces in contact with the photoelectric conversion elements, and an insulating film with a lower refractive index than a refractive index of the second semiconductor layer to cover the second semiconductor layer.
摘要翻译：根据实施例的固态成像装置包括：布置在第一半导体层的第一面上的多个像素，每个像素包括光电转换元件，其转换通过第一半导体层的第二面进入的光所述光电转换元件具有形成在所述第一面上形成的第一半导体区域的pn结，以及形成在所述第一半导体区域的表面上的第二半导体区域; 像素分离区域，彼此分离并形成在像素之间，每个像素分隔区域包括覆盖与光电转换元件接触的面的第二半导体层，以及折射率低于折射率的绝缘膜第二半导体层覆盖第二半导体层。

42. 发明申请

US20110156186A1 SOLID-STATE IMAGING DEVICE 失效
标题翻译：固态成像装置
公开(公告)号：US20110156186A1
公开(公告)日：2011-06-30
申请号：US12875546
申请日：2010-09-03
申请人： Yoshinori Iida , Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki
发明人： Yoshinori Iida , Risako Ueno , Kazuhiro Suzuki , Hideyuki Funaki
IPC分类号： H01L31/0232
CPC分类号： H01L27/1463 , H01L27/1464
摘要： Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.
摘要翻译：某些实施例提供了一种固态成像装置，包括：设置在半导体衬底上的多个像素，每个像素具有半导体区域，该半导体区域将来自半导体衬底的第一面侧的入射光转换成信号电荷并将其存储信号充电读出电路，设置在与第一面相反一侧的第二面的一侧，并读出存储在像素中的信号电荷; 以及设置在所述半导体衬底中的相邻像素之间的像素分离结构，所述像素分离结构包括埋置在从所述第一面延伸的沟槽中的叠层膜，所述堆叠膜包括沿侧面设置的第一绝缘膜和底部并且设置在沟槽中的固定电荷膜以覆盖第一绝缘膜并且保持作为非信号电荷的固定电荷。

43. 发明授权

US07907495B2 Two-dimensional digital data acquisition element and holographic storage apparatus 有权
标题翻译：二维数字采集元件和全息存储装置
公开(公告)号：US07907495B2
公开(公告)日：2011-03-15
申请号：US12109633
申请日：2008-04-25
申请人： Yoshinori Iida , Hiroto Honda , Akiko Hirao , Kazuki Matsumoto
发明人： Yoshinori Iida , Hiroto Honda , Akiko Hirao , Kazuki Matsumoto
IPC分类号： G11B7/00
CPC分类号： G11B7/0065 , G11B7/131 , G11B7/1372 , G11C13/044 , G11C13/047
摘要： A two-dimensional digital data acquisition element includes: a pixel area having a plurality of pixels arranged in a matrix form, each of the pixels having a photoelectric conversion element to convert the reproduced light from the optical information recording medium to an electric signal; selection circuits which select the pixel; a readout circuit which reads out an electric signal of a pixel selected by the selection circuits; and a 1-bit AD converter which converts an output of the readout circuit to 1-bit digital data. A pitch ratio N between a pitch P1 of the unit data areas in the two-dimensional digital image information and a pitch P2 of the pixels in the pixel area defined as N=P1/P2 satisfies a relation A·n2/(An+1)
摘要翻译：二维数字数据采集元件包括：具有以矩阵形式布置的多个像素的像素区域，每个像素具有光电转换元件，用于将来自光信息记录介质的再现光转换为电信号; 选择像素的选择电路; 读出电路，其读出由选择电路选择的像素的电信号; 以及将读出电路的输出转换为1位数字数据的1位AD转换器。二维数字图像信息中的单位数据区域的间距P1与定义为N = P1 / P2的像素区域中的像素的间距P2之间的间距比N满足关系A·n2 /（An + 1 ）

44. 发明授权

US07737400B2 Bolometer type uncooled infrared ray sensor and method for driving the same 失效
标题翻译：分光光度计型非制冷红外线传感器及其驱动方法
公开(公告)号：US07737400B2
公开(公告)日：2010-06-15
申请号：US12206234
申请日：2008-09-08
申请人： Hideyuki Funaki , Yoshinori Iida , Hiroto Honda
发明人： Hideyuki Funaki , Yoshinori Iida , Hiroto Honda
IPC分类号： G01J5/20
CPC分类号： H04N5/33 , G01J5/20 , G01J5/22 , G01J2005/0048 , H04N5/3575 , H04N5/361 , H04N5/363 , H04N5/3651
摘要： A bolometer type uncooled infrared ray sensor includes: an image pickup region having detection pixels arranged in a matrix form on a semiconductor substrate to detect incident infrared rays; a plurality of row selection lines provided in the image pickup region; current sources capable of letting constant currents flow through the respective row selection lines; a plurality of signal lines provided in the image pickup region; voltage readout circuits provided so as to respectively correspond to the signal lines to read out signal voltages generated on the respectively corresponding signal lines; coupling capacitances respectively provided between the respective signal lines and the corresponding voltage readout circuits; and a calculator which calculates a difference between two signal voltages read out by the voltage readout circuits, corresponding to outputs of the same detection pixel for two different current values supplied from the current sources.
摘要翻译：测辐射计型非冷却红外线传感器包括：具有以矩阵形式布置在半导体衬底上的检测像素的摄像区域，以检测入射的红外线; 设置在图像拾取区域中的多个行选择线; 能够使恒定电流流过各行选择线的电流源; 设置在所述摄像区域中的多条信号线; 电压读出电路，分别对应于信号线，以读出分别对应的信号线上产生的信号电压; 分别设置在各信号线和对应的电压读出电路之间的耦合电容; 以及计算器，其计算由电压读出电路读出的两个信号电压之间的差值，对应于从电流源提供的两个不同电流值的相同检测像素的输出。

45. 发明申请

US20090127639A1 SEMICONDUCTOR APPARATUS 审中-公开
公开(公告)号：US20090127639A1
公开(公告)日：2009-05-21
申请号：US12206101
申请日：2008-09-08
申请人： Kazuhiro Suzuki , Yoshinori Iida , Hideyuki Funaki
发明人： Kazuhiro Suzuki , Yoshinori Iida , Hideyuki Funaki
IPC分类号： H01L25/00
CPC分类号： G01C19/5719 , B81C1/00238 , B81C2203/0109 , B81C2203/019
摘要： A semiconductor apparatus includes: a first chip including a MEMS device which has a structure supported in midair therein, and having first pads and a first joining region electrically connected to the MEMS device on a top face thereof; a second chip including a circuit having a semiconductor device electrically connected to the MEMS device therein, and having second pads and a second joining region electrically connected to the semiconductor device on a top face thereof, the second chip being disposed in opposition to the first chip so as to oppose the second pads and the second joining region respectively to the first pads and the first joining region; electrical connection parts which electrically connect the first pads to the second pads, respectively; and joining parts provided between the first joining region and the second joining region opposed to the first joining region to join the first chip and the second chip to each other.
摘要翻译：半导体装置包括：第一芯片，其包括具有支撑在其中空间的结构的MEMS器件，并且具有第一焊盘和在其顶面上电连接到MEMS器件的第一接合区域; 第二芯片，包括具有与其中的MEMS器件电连接的半导体器件的电路，并且具有在其顶面上与半导体器件电连接的第二焊盘和第二接合区域，第二芯片设置成与第一芯片相对以便分别将第二焊盘和第二接合区域与第一焊盘和第一接合区域相对; 分别将第一焊盘电连接到第二焊盘的电连接部分; 以及设置在第一接合区域和与第一接合区域相对的第二接合区域之间的接合部分，以将第一芯片和第二芯片彼此接合。

46. 发明申请

US20090015491A1 ELECTROMAGNETIC WAVE SENSOR, IMAGING ELEMENT AND IMAGING DEVICE 有权
标题翻译：电磁波传感器，成像元件和成像装置
公开(公告)号：US20090015491A1
公开(公告)日：2009-01-15
申请号：US11856255
申请日：2007-09-17
申请人： Naru Ikeda , Hiroto Honda , Yoshinori Iida , Ikuo Fujiwara
发明人： Naru Ikeda , Hiroto Honda , Yoshinori Iida , Ikuo Fujiwara
IPC分类号： G01R29/08 , G01J1/00
CPC分类号： H04N5/30 , G01J5/08 , G01J5/0837 , G01J5/20 , G01N21/35 , G01N21/3581 , H04N5/33
摘要： The present invention enables to provide a simple and inexpensive electromagnetic wave sensor that selectively detects sub-millimeter waves and millimeter waves in a specific frequency band, an imaging element and an imaging device. The distance of the gap between a plurality of antenna elements is smaller than the wavelength of infrared light. A capacitor electrically formed by the gap between the plurality of antenna elements, and an electrical resistor portion form parallel circuits electrically coupled to the antenna portion. The plurality of antenna elements are formed so that the impedance of the antenna portion is matched with the impedance of the parallel circuits against electromagnetic waves having a predetermined frequency, and is not matched against the higher harmonics of electromagnetic waves having the predetermined frequency.
摘要翻译：本发明能够提供一种简单且便宜的电磁波传感器，其选择性地检测特定频带中的亚毫米波和毫米波，成像元件和成像装置。多个天线元件之间的间隙的距离小于红外光的波长。由多个天线元件之间的间隙电气形成的电容器和形成与天线部分电耦合的并联电路的电阻部分。多个天线元件被形成为使得天线部分的阻抗与并联电路的阻抗与具有预定频率的电磁波匹配，并且与具有预定频率的电磁波的高次谐波不匹配。

47. 发明申请

US20050241398A1 Acoustoelectric conversion device 失效
标题翻译：声电转换装置
公开(公告)号：US20050241398A1
公开(公告)日：2005-11-03
申请号：US11116273
申请日：2005-04-28
申请人： Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Yujiro Naruse
发明人： Kazuhiro Suzuki , Hideyuki Funaki , Yoshinori Iida , Yujiro Naruse
IPC分类号： H04R7/02 , G01H9/00 , G01N29/04 , G01N29/24 , H04R7/04 , H04R19/04
CPC分类号： G01N29/2418 , G01H9/00
摘要： In an acoustoelectric converter element, a light wave from a light source is introduced into a first optical waveguide of a vibration substrate, and diffracted by a diffraction grating disposed on the first optical waveguide. The diffracted light is directed to and detected by a photo detector. Here, the vibration substrate is so supported as to vibrate with respect to an acoustic wave. Therefore, the diffracted light detected by the photo detector is modulated by the acoustic wave, and a signal is output from the detector in accordance with the acoustic wave.
摘要翻译：在声电转换元件中，来自光源的光波被引入到振动基板的第一光波导中，并且被设置在第一光波导上的衍射光栅衍射。衍射光被光检测器导向并检测。这里，振动基板被支撑为相对于声波振动。因此，由光检测器检测的衍射光被声波调制，并且根据声波从检测器输出信号。

48. 发明授权

US06504193B1 Solid-state image device and method of manufacturing the same 失效
标题翻译：固态图像装置及其制造方法
公开(公告)号：US06504193B1
公开(公告)日：2003-01-07
申请号：US09606178
申请日：2000-06-29
申请人： Hiroaki Ishiwata , Yoshinori Iida
发明人： Hiroaki Ishiwata , Yoshinori Iida
IPC分类号： H01L31062
CPC分类号： H01L27/14609 , H01L27/14687
摘要： Part of a photodiode layer extends to a position under a gate electrode. The photodiode layer and a drain layer are separated by a punch-through stopper region. A surface shield layer is formed on the photodiode layer. When a voltage is applied to the gate electrode, the charge accumulated in the photodiode layer is transferred to the drain region via a channel formed under the gate electrode, not being affected by a potential barrier in the surface shield layer.
摘要翻译：光电二极管层的一部分延伸到栅电极下方的位置。光电二极管层和漏极层由穿通止挡区域分开。在光电二极管层上形成表面屏蔽层。当向栅电极施加电压时，积聚在光电二极管层中的电荷经由形成在栅电极下面的沟道传输到漏区，不受表面屏蔽层中的势垒的影响。

49. 发明授权

US5527417A Photo-assisted CVD apparatus 失效
标题翻译：光辅助CVD装置
公开(公告)号：US5527417A
公开(公告)日：1996-06-18
申请号：US446290
申请日：1995-05-22
申请人： Yoshinori Iida , Akihiko Furukawa , Tetsuya Yamaguchi , Michio Sasaki , Hisanori Ihara , Hidetoshi Nozaki , Takaaki Kamimura
发明人： Yoshinori Iida , Akihiko Furukawa , Tetsuya Yamaguchi , Michio Sasaki , Hisanori Ihara , Hidetoshi Nozaki , Takaaki Kamimura
IPC分类号： H01L21/205 , C23C16/44 , C23C16/48 , C23F1/02
CPC分类号： C23C16/4405 , C23C16/482 , C23C16/488
摘要： A photo-assisted CVD apparatus including a reaction chamber for storing a substrate, an inlet port for feeding a source gas into the reaction chamber, a light source for radiating light on the source gas fed into the reaction chamber to decompose the source gas upon radiating the light, thereby depositing a film on the substrate, an inlet port for supplying an etching gas into the reaction chamber, and a discharge electrode, arranged above the substrate and having a configuration, surrounding a space above the substrate, for exciting the etching gas.
摘要翻译：一种光辅助CVD装置，包括用于存储基板的反应室，用于将源气体供给到反应室中的入口端口，用于在进入反应室的源气体上照射光的光源，以在辐射时分解源气体由此在基板上沉积膜，将用于向反应室供给蚀刻气体的入口端口和放电电极，该放电电极布置在基板上方并且具有围绕基板上方的空间的激励蚀刻气体。

50. 发明授权

US08941158B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08941158B2
公开(公告)日：2015-01-27
申请号：US12875809
申请日：2010-09-03
申请人： Yoshinori Iida , Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa , Hisayo Momose , Koichi Kokubun , Nobuyuki Momo
发明人： Yoshinori Iida , Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa , Hisayo Momose , Koichi Kokubun , Nobuyuki Momo
IPC分类号： H01L31/0216 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/1463
摘要： Certain embodiments provide a solid-state imaging device including: a semiconductor substrate of a first conductivity type having a first face and a second face that is the opposite side from the first face; a plurality of pixels provided on the first face of the semiconductor substrate, each of the pixels including a semiconductor region of a second conductivity type that converts incident light into signal charges, and stores the signal charges; a readout circuit provided on the second face of the semiconductor substrate to read the signal charges stored in the pixels; an ultrafine metal structure placed at intervals on a face on a side of the semiconductor region, the light being incident on the face; and an insulating layer provided between the ultrafine metal structure and the semiconductor region.
摘要翻译：某些实施例提供了一种固态成像装置，包括：第一导电类型的半导体衬底，其具有第一面和与第一面相反一侧的第二面; 设置在半导体衬底的第一面上的多个像素，每个像素包括将入射光转换为信号电荷的第二导电类型的半导体区域，并存储信号电荷; 读出电路，设置在半导体衬底的第二面上，以读取存储在像素中的信号电荷; 在半导体区域的一侧的表面上间隔放置的超细金属结构，该光入射到该面上; 以及设置在超细金属结构和半导体区域之间的绝缘层。

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