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    • 2. 发明申请
    • SOLID-STATE IMAGE SENSING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGING SYSTEM
    • 固态图像感测装置,其制造方法和成像系统
    • US20080035847A1
    • 2008-02-14
    • US11828614
    • 2007-07-26
    • Hiroto HONDAIkuo FujiwaraYoshinori IidaNaru Ikeda
    • Hiroto HONDAIkuo FujiwaraYoshinori IidaNaru Ikeda
    • G01J5/20
    • G01J5/20G01J5/061H01L27/14649
    • The present invention provides a solid-state image sensing device that converts long-wavelength light represented by the terahertz band into electric signals without being affected by the fluctuation of radiated heat, and outputs the signals mainly as picture signals; a method for manufacturing the same, and an imaging system. The cell unit has an antenna to generate electrical signals by receiving incident electric waves, an electrical resistor electrically connected to the antenna, and to vary the temperature of the cell unit by generating Joule heat corresponding to the electrical signals, and a thermoelectric conversion element electrically connected to the support structure portion, electrically insulated from the antenna and the electrical resistor, and thermally connected to the electrical resistor, to generate electrical signals by detecting the temperature variation of the cell unit; and the side of the incident electric waves in the cell unit is formed of a material to reflect infrared lights.
    • 本发明提供一种固态图像感测装置,其将由太赫兹频带表示的长波长光转换为电信号而不受辐射热的波动的影响,并将该信号主要作为图像信号输出; 其制造方法和成像系统。 电池单元具有通过接收入射电波来产生电信号的天线,电连接到天线的电阻器,并且通过产生对应于电信号的焦耳热来改变电池单元的温度,以及热电转换元件电 连接到支撑结构部分,与天线和电阻器电绝缘并且热连接到电阻器,以通过检测电池单元的温度变化来产生电信号; 并且电池单元中的入射电波的一侧由反射红外光的材料形成。
    • 3. 发明授权
    • Display device
    • 显示设备
    • US07184191B2
    • 2007-02-27
    • US11245355
    • 2005-10-07
    • Yukitami MizunoShintaro EnomotoNaru Ikeda
    • Yukitami MizunoShintaro EnomotoNaru Ikeda
    • G02F1/153
    • G09G3/3433G02F1/1525G02F1/155G02F1/157G09G2300/023G09G2310/06
    • A display device with both light-emitting and reflective display capabilities is disclosed. This device includes first and second electrodes provided on a first substrate, a second substrate provided to be spaced apart from and oppose the first substrate, a third electrode provided on the second substrate, a first layer which is provided between the first and second substrates on the first substrate side and which contains a light emissive material that emits light through electrochemical oxidation or reduction, a second layer which is provided between the first and second substrates on the second substrate side and which includes a coloring material that changes in color due to electrochemical oxidation or reduction, and a third layer between the first and second layers. The third layer is an electrolytic layer having non-transmissivity or transmission retardancy against the light emissive material or its oxidation or reduction species.
    • 公开了一种具有发光和反射显示能力的显示装置。 该装置包括设置在第一基板上的第一和第二电极,设置成与第一基板间隔开并与第一基板相对的第二基板,设置在第二基板上的第三电极,设置在第一和第二基板之间的第一层 第一基板侧并且包含通过电化学氧化或还原发光的发光材料;第二层,设置在第二基板侧的第一和第二基板之间,并且包括由于电化学而变色的着色材料 氧化或还原,以及第一和第二层之间的第三层。 第三层是对光发射材料或其氧化或还原物质具有非透射性或透射阻滞性的电解质层。
    • 8. 发明授权
    • Solid-state image sensing device, method for manufacturing the same, and imaging system
    • 固体摄像装置及其制造方法以及摄像系统
    • US07638769B2
    • 2009-12-29
    • US11828614
    • 2007-07-26
    • Hiroto HondaIkuo FujiwaraYoshinori IidaNaru Ikeda
    • Hiroto HondaIkuo FujiwaraYoshinori IidaNaru Ikeda
    • G01J5/20G02F1/01G01J5/02H01Q1/38
    • G01J5/20G01J5/061H01L27/14649
    • The present invention provides a solid-state image sensing device that converts long-wavelength light represented by the terahertz band into electric signals without being affected by the fluctuation of radiated heat, and outputs the signals mainly as picture signals; a method for manufacturing the same, and an imaging system. The cell unit has an antenna to generate electrical signals by receiving incident electric waves, an electrical resistor electrically connected to the antenna, and to vary the temperature of the cell unit by generating Joule heat corresponding to the electrical signals, and a thermoelectric conversion element electrically connected to the support structure portion, electrically insulated from the antenna and the electrical resistor, and thermally connected to the electrical resistor, to generate electrical signals by detecting the temperature variation of the cell unit; and the side of the incident electric waves in the cell unit is formed of a material to reflect infrared lights.
    • 本发明提供一种固态图像感测装置,其将由太赫兹频带表示的长波长光转换为电信号而不受辐射热的波动的影响,并将该信号主要作为图像信号输出; 其制造方法和成像系统。 电池单元具有通过接收入射电波来产生电信号的天线,电连接到天线的电阻器,并且通过产生对应于电信号的焦耳热来改变电池单元的温度,以及热电转换元件电 连接到支撑结构部分,与天线和电阻器电绝缘并且热连接到电阻器,以通过检测电池单元的温度变化来产生电信号; 并且电池单元中的入射电波的一侧由反射红外光的材料形成。
    • 10. 发明授权
    • Solid-state imaging device and driving method thereof
    • 固态成像装置及其驱动方法
    • US07535003B2
    • 2009-05-19
    • US12050572
    • 2008-03-18
    • Hiroto HondaYoshinori IidaIkuo FujiwaraNaru Ikeda
    • Hiroto HondaYoshinori IidaIkuo FujiwaraNaru Ikeda
    • H01L31/00
    • H01L27/14649G01J5/0245G01J5/20
    • This disclosure concerns a solid-state imaging device including a pixel thermally separated from a substrate; a heat conduction switch having one end connected to the substrate and other end capable of contacting to the substrate or the pixel, the heat conduction switch changing over a state of the pixel to one of a first state and a second state, the first state being a state in which the pixel is thermally isolated from the substrate by causing the other end of the heat conduction switch to contact with the substrate, the second state being a state in which the pixel is thermally shorted to the substrate by causing the other end of the heat conduction switch to contact with the pixel; and a signal detector detecting a difference between the signal voltage of the pixel in the first state and the signal voltage of the pixel in the second state.
    • 本公开涉及包括从衬底热分离的像素的固态成像装置; 一个热传导开关,其一端连接到该基板,另一端能够接触该基板或该像素,该导热开关将该像素的状态转换为第一状态和第二状态之一,第一状态为 通过使热传导开关的另一端与基板接触而将像素与基板热隔离的状态,第二状态是通过使基板的另一端将像素热短路到基板的状态 热传导开关与像素接触; 以及信号检测器,其检测第一状态下的像素的信号电压与第二状态下的像素的信号电压之间的差。