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41. 发明申请

US20130122625A1 METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENT ELEMENT 有权
标题翻译：制造有机电致发光元件的方法
公开(公告)号：US20130122625A1
公开(公告)日：2013-05-16
申请号：US13810994
申请日：2011-07-15
申请人： Shuichi Sassa , Yoshinobu Ono
发明人： Shuichi Sassa , Yoshinobu Ono
IPC分类号： H01L51/00
CPC分类号： H01L51/0003 , H01L51/0024 , H01L51/5092 , H01L51/56
摘要： A method for manufacturing an organic electroluminescent element that includes an anode (32), a cathode (34), a layered structure placed between the anode and the cathode and formed by stacking a plurality of organic layers including an electron injection layer (44) provided in contact with the cathode, the method including the steps of: preparing a first component (12) in which either the anode alone is or both the anode and at least a part of the organic layers to make up the layered structure are provided on a first substrate (22); preparing a second component (14) in which either the cathode alone is or both the cathode and the rest part to make up the layered structure excluding the part provided in the first component is provided on a second substrate (24); and laminating the first component and the second component to form the layered structure placed between the anode and the cathode, in which the electron injection layer that contains an ionic polymer is formed in the step of preparing the first component or in the step of preparing the second component.
摘要翻译：一种制造有机电致发光元件的方法，其包括阳极（32），阴极（34），位于阳极和阴极之间的层状结构，并且通过堆叠包括电子注入层（44）的多个有机层形成所述方法包括以下步骤：制备第一组分（12），其中单独的阳极或阳极和至少一部分有机层以构成层状结构，其设置在第一基板（22）; 制备第二组分（14），其中单独的阴极或阴极和静止部分两者以构成除了设置在第一组分中的部分之外的层状结构设置在第二衬底上; 并且层压第一部件和第二部件以形成放置在阳极和阴极之间的层状结构，其中在制备第一部件的步骤中形成含有离子聚合物的电子注入层，或者在制备第二部分。

42. 发明授权

US07459326B2 Method for producing and epitaxial substrate for compound semiconductor light-emitting device 失效
标题翻译：用于化合物半导体发光器件的制造和外延衬底的方法
公开(公告)号：US07459326B2
公开(公告)日：2008-12-02
申请号：US11495748
申请日：2006-07-31
申请人： Sadanori Yamanaka , Yoshihiko Tsuchida , Yoshinobu Ono , Yasushi Iyechika
发明人： Sadanori Yamanaka , Yoshihiko Tsuchida , Yoshinobu Ono , Yasushi Iyechika
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/14
摘要： In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.
摘要翻译：为了提高发光效率而不降低发光层结构的保护性能，与发光层结构接触地设置由第一至第三层构成的三个p型层结构。第一层是用作保护层的n型AlGaN层，第三层是用作接触层的GaN：Mg层，第二层是在这些层之间形成的作为中间层的AlGaN：Mg层。通过提供中间层，即使使n型AlGaN层变薄，InGaN层也可以在层的生长期间被充分地保护成热，由此能够使GaN：Mg层靠近发光层结构，提高空穴注入发光层结构的效率，从而提高发光效率。

43. 发明授权

US07399687B2 Substrate of gallium nitride single crystal and process for producing the same 有权
标题翻译：氮化镓单晶衬底及其制造方法
公开(公告)号：US07399687B2
公开(公告)日：2008-07-15
申请号：US10546983
申请日：2004-03-04
申请人： Kazumasa Hiramatsu , Hideto Miyake , Shinya Bohyama , Takayoshi Maeda , Yoshinobu Ono
发明人： Kazumasa Hiramatsu , Hideto Miyake , Shinya Bohyama , Takayoshi Maeda , Yoshinobu Ono
IPC分类号： H01L21/20
CPC分类号： H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647
摘要： The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.
摘要翻译：本发明涉及一种用于制造具有由通式为III-V族化合物半导体晶体表示的外延基板的方法，该III-V族化合物半导体晶体由以下通式表示：＆lt; N（其中，x + y + z = 1,0 <= x <=1,0,0≤i≤1,0<= z <= 1）具有降低的位错密度，包括第一步覆盖具有由与III-V族化合物半导体不同的材料制成的掩模，使得通过使用具有多个投影形状的III-V族化合物半导体晶体，仅使晶体周围的部分构成开口，第二步是使 III-V族化合物半导体晶体通过在开口处使用III-V族化合物半导体晶体作为晶种横向。根据本发明，获得具有位错密度低且翘曲少的III-V族化合物半导体晶体的外延基板。

44. 发明授权

US06617235B2 Method of manufacturing Group III-V compound semiconductor 失效
标题翻译： III-V族化合物半导体的制造方法
公开(公告)号：US06617235B2
公开(公告)日：2003-09-09
申请号：US08623534
申请日：1996-03-29
申请人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada
发明人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada
IPC分类号： H01L213205
CPC分类号： C30B29/40 , C30B25/02 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10S438/93
摘要： The present invention provides for a method of manufacturing a Group III-V compound semiconductor, which grows a nitrogen-contained Group III-V compound semiconductor of the p-type conductivity, without performing any particular post-processing after growing the compound semiconductor, and which prevents a deterioration in the yield of manufacturing light emitting elements due to post-processing. A first embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1,0≧z≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that carrier gas is inert gas in which the concentration of hydrogen is 0.5 % or smaller by volume. A second embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1, 0≧y≧1,0≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that after etching within a reaction furnace using at least one compound which is selected from a compound group consisting of compounds of halogenated hydrogen, compounds of halogen and Group V elements and compounds of halogen, hydrogen and Group V elements, inert gas in which the concentration of hydrogen is 0.5% or smaller by volume is used as carrier gas.
摘要翻译：本发明提供一种制造III-V族化合物半导体的方法，其生长p型导电性的含氮III-V族化合物半导体，而在化合物半导体生长之后不进行任何特定的后处理，以及这防止了由于后处理而导致制造发光元件的产量的劣化。第一实施例涉及一种制造含有p型杂质的III-V族化合物半导体的方法，其通过通式In x Ga y Al z N（0> = x> = 1,0> = z> = 1，x + y + z = 1），通过使用金属有机物的热分解气相法，其特征在于载气是氢浓度为0.5体积％以下的惰性气体。第二实施例涉及一种制造含有p型杂质的III-V族化合物半导体的方法，其由通式In x Ga y Al z N（0> = x> = 1,0，...，y = 1,0 > = 1，x + y + z = 1），通过使用金属有机物的热分解气相法，其特征在于，使用至少一种选自由化合物卤化氢，卤素和V族元素的化合物和卤素，氢和V族元素的化合物，其中氢的浓度为0.5体积％或更小的惰性气体用作载气。

45. 发明授权

US06488478B2 High pressure fuel pump 失效
标题翻译：高压燃油泵
公开(公告)号：US06488478B2
公开(公告)日：2002-12-03
申请号：US10141119
申请日：2002-05-09
申请人： Yoshinobu Ono , Yukio Takahashi , Hideki Machimura , Minoru Hashida , Masayoshi Kotaki , Takefumi Yamamura
发明人： Yoshinobu Ono , Yukio Takahashi , Hideki Machimura , Minoru Hashida , Masayoshi Kotaki , Takefumi Yamamura
IPC分类号： F04B2708
CPC分类号： F04B1/2021 , F04B1/122 , F04B1/14 , F04B53/164
摘要： An axial plunger pump which does not need bellows by restricting fuel to a cylinder bore configuring a pump portion and by lubricating the other portion with oil. The high pressure fuel pump includes a plunger reciprocating according to a shaking movement of a swash plate, a cylinder block forming a pump chamber together with the plunger, and a sealing member provided between the plunger and a cylinder bore for sealing oil leaked from the pump chamber to a chamber surrounding the pump chamber, wherein oil in the oil chamber is supplied from the outside of the high pressure fuel pump.
摘要翻译：一种轴向柱塞泵，其通过将燃料限制到构成泵部分的气缸孔并且用油润滑另一部分而不需要波纹管。所述高压燃料泵包括根据旋转斜盘的振动运动往复运动的柱塞，与所述柱塞一起形成泵室的气缸体以及设置在所述柱塞和用于密封从所述泵泄漏的油的气缸孔之间的密封构件室到围绕泵室的腔室，其中油室中的油从高压燃料泵的外部供应。

46. 发明授权

US06472298B2 Layered group III-V compound semiconductor, method of manufacturing the same and light emitting element 有权
标题翻译：层状III-V族化合物半导体，其制造方法和发光元件
公开(公告)号：US06472298B2
公开(公告)日：2002-10-29
申请号：US09998296
申请日：2001-12-03
申请人： Yasushi Iyechika , Tomoyuki Takada , Yoshinobu Ono
发明人： Yasushi Iyechika , Tomoyuki Takada , Yoshinobu Ono
IPC分类号： H01L2120
CPC分类号： H01L33/32 , H01L29/201 , H01L29/205 , H01L33/007 , H01S5/32341
摘要： The present invention provides for a high quality Group III-V compound semiconductor, a method of manufacturing the same, and a light emitting element with an excellent emission characteristic which incorporates such a Group III-V compound semiconductor. The Group III-V compound semiconductor has a structure in which a fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula GaaAlbN (a+b=1, 0≦a≦1, 0≦b≦1), a fourth-layer having a lower impurity concentration, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gaa′Alb′N (a′+b′=1, 0≦a′≦1, 0≦b′≦1), and a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=1, 0
摘要翻译：本发明提供了一种高品质的III-V族化合物半导体，其制造方法和具有优异的发射特性的发光元件，其结合了这种III-V族化合物半导体。 III-V族化合物半导体具有这样的结构，其中由通式GaaAlbN（a + b =1,0,0≤a≤1）表示的III-V族化合物半导体形成的第五层，0 <= b <= 1），由通式Gaa'Alb'N（a'+ b'= 1）表示的III-V族化合物半导体形成的具有较低杂质浓度的第四层， 1，0 <= a'<= 1，0 <= b'<= 1），以及由通式In x Ga y Al z N（x + y）表示的III-V族化合物半导体形成的第一层 + z = 1,0

47. 发明授权

US06411465B1 Rotary head drum assembly with upper, lower and inner drums with cylindrical surfaces of differing outward radial position 失效
标题翻译：旋转头鼓组件具有上，下和内鼓，圆柱形表面具有不同的向外径向位置
公开(公告)号：US06411465B1
公开(公告)日：2002-06-25
申请号：US09531587
申请日：2000-03-20
申请人： Shigeo Obata , Makoto Miyamoto , Atsushi Imai , Yoshinobu Ono , Shinji Tanaka , Hisashi Takahashi , Kenji Kawamata
发明人： Shigeo Obata , Makoto Miyamoto , Atsushi Imai , Yoshinobu Ono , Shinji Tanaka , Hisashi Takahashi , Kenji Kawamata
IPC分类号： G11B1561
CPC分类号： G11B15/61 , G11B15/62
摘要： A rotary head in which the tape running load is decreased by setting the tape path cylindrical surface of an upper drum (12) in a range of winding of a tape (31) at an inner side relative to the tape path cylindrical surface of a lower drum (11). Alternatively, the tape path cylindrical surface of an inner drum (13) in a range of winding of the tape (31) is positioned at an outer side relative to the tape path cylindrical surface of the upper or lower drum.
摘要翻译：一种旋转头，其中通过将上滚筒（12）的带路径圆柱形表面设置在带（31）的卷绕范围内，相对于下层的带路径圆柱形表面的内侧而减小了带运行负载鼓（11）。或者，在带（31）的卷绕范围内的内鼓（13）的带路径圆柱形表面位于相对于上鼓或下鼓的带路径圆柱形表面的外侧。

48. 发明授权

US5069306A Mounting structure for the power unit of a motor vehicle 失效
标题翻译：电动车辆动力装置的安装结构
公开(公告)号：US5069306A
公开(公告)日：1991-12-03
申请号：US336656
申请日：1989-04-11
申请人： Kazuo Inoue , Shoichi Sano , Masami Ogura , Kenichi Nagahiro , Tsuneo Konno , Hajime Kajiwara , Yoshinobu Ono , Suguru Yoshida , Hiroo Shimada , Masahiro Hashiguchi
发明人： Kazuo Inoue , Shoichi Sano , Masami Ogura , Kenichi Nagahiro , Tsuneo Konno , Hajime Kajiwara , Yoshinobu Ono , Suguru Yoshida , Hiroo Shimada , Masahiro Hashiguchi
IPC分类号： B60G11/08 , B60K5/04 , B60K13/04 , B60K17/04 , B62D3/00
CPC分类号： B60K13/04 , B60G11/08 , B60K5/04
摘要： A power unit mounting structure in a motor vehicle includes a power unit comprising an engine having a crankshaft, a transmission coupled to the crankshaft of the engine, and a differential interposed between drive axles connected to a pair of laterally spaced front road wheels of the motor vehicle and the transmission. The power unit is mounted in a front portion of the motor vehicle with its center of gravity positioned rearwardly of the drive axles extending from the differential toward front road wheels serving as the drive road wheels. A steering gearbox extends parallel to the drive axles and is disposed forwardly of the drive axles.

49. 发明授权

US5009463A Reinforced plastic automobile body structure 失效
标题翻译：强化塑料车身结构
公开(公告)号：US5009463A
公开(公告)日：1991-04-23
申请号：US517381
申请日：1990-05-01
申请人： Masahiro Saitoh , Suguru Yoshida , Keiichi Obata , Yoshinobu Ono
发明人： Masahiro Saitoh , Suguru Yoshida , Keiichi Obata , Yoshinobu Ono
IPC分类号： B62D25/04 , B29C70/68 , B60J1/00 , B60J5/04
CPC分类号： B60J5/0473 , B60J1/008
摘要： An automobile body structure includes a canopy of plastic having a pair of thicker portions projecting on an inner surface of the canopy and spaced from each other in the fore-and-aft direction of the automobile body structure, and a rigid support member embedded in each of the thicker portions. The canopy includes a roof, and front and rear windows formed therewith of a unitary, undivided construction, the thicker portions being disposed near upper edges of the front and rear windows. The thicker portions are arch-shaped. The rigid support member comprises a solid rod or a hollow pipe.

50. 发明授权

US4788473A Plasma generating device with stepped waveguide transition 失效
标题翻译：等离子体发生器件，具有阶梯式波导过渡
公开(公告)号：US4788473A
公开(公告)日：1988-11-29
申请号：US63972
申请日：1987-06-19
申请人： Haruhisa Mori , Motoo Nakano , Yoshinobu Ono , Takashi Igarashi , Masanao Hotta
发明人： Haruhisa Mori , Motoo Nakano , Yoshinobu Ono , Takashi Igarashi , Masanao Hotta
IPC分类号： H01J27/18 , H01J37/08 , H01J37/32 , H01J3/04
CPC分类号： H01J37/32229 , H01J27/18 , H01J37/08
摘要： A plasma generating device comprises:a rectangular wave guide for transmitting microwaves, wherein the width of the plasma generating device is decreased in the direction of an electrical field of the microwaves; a plasma generating chamber wherein plasma is generated by absorbing, in a gas, microwave energy transmitted by the rectangular wave guide, and a part of the plasma generating chamber has a rectangular cross-section taken along the plane perpendicular to the microwave propagation direction. A magnetic field generating device is provided having the same axial direction as the direction of propagation of the microwaves and applies a magnetic field having an Electron Cyclotron Resonance intensity to the plasma generating chamber. The magnetic field generating device is provided at least one location outside of the direction of the microwave electrical field direction, and a dielectric window is provided between the rectangular wave guide and the plasma generating chamber to realize a vacuum seal of the plasma generating chamber.
摘要翻译：一种等离子体产生装置包括：用于传输微波的矩形波导，其中所述等离子体产生装置的宽度在所述微波的电场方向上减小; 等离子体产生室，其中通过在气体中吸收由矩形波导传输的微波能量而产生等离子体，并且等离子体产生室的一部分具有沿着与微波传播方向垂直的平面截取的矩形截面。提供具有与微波传播方向相同轴向的磁场产生装置，并向等离子体产生室施加具有电子回旋共振强度的磁场。磁场产生装置设置在微波电场方向外的至少一个位置处，并且在矩形波导和等离子体发生室之间设置介质窗，以实现等离子体发生室的真空密封。

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