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1. 发明授权

US5430090A Hot-melt adhesive 失效
标题翻译：热熔胶
公开(公告)号：US5430090A
公开(公告)日：1995-07-04
申请号：US199028
申请日：1994-02-18
申请人： Yoshihiko Miyamoto , Masahiro Saitoh
发明人： Yoshihiko Miyamoto , Masahiro Saitoh
IPC分类号： C08K5/09 , C09J131/04 , C08K5/04
CPC分类号： C08K5/09 , C09J131/04
摘要： The invention relates to a polyvinyl acetate resin composition comprising a hydrophilic polyvinyl acetate resin rendered soluble or dispersible in water by partial saponification or introduction of hydrophilic groups (A), a hydroxy fatty acid compound of not less than 6 carbon atoms (B) and a plasticizer (C).
摘要翻译：本发明涉及一种聚乙酸乙烯酯树脂组合物，其包含亲水性聚乙酸乙烯酯树脂，其通过部分皂化或引入亲水基团（A），不少于6个碳原子的羟基脂肪酸化合物（B）和增塑剂（C）。

2. 发明授权

US5388871A Fittings with box nuts 失效
标题翻译：配有盒螺母的配件
公开(公告)号：US5388871A
公开(公告)日：1995-02-14
申请号：US65266
申请日：1993-05-21
申请人： Masahiro Saitoh
发明人： Masahiro Saitoh
IPC分类号： F16L19/02 , F16L47/04 , F16L19/06
CPC分类号： F16L19/0283 , F16L19/0218 , F16L47/04
摘要： A resin-made detachable fitting to which a tube is connected. The fitting comprises a core of a cylindrical or ring shape forcibly inserted into the tube end to expand it, a fitting body having an inner passage, and a box nut able to mesh with ends of the fitting body and connecting the tube end to the fitting body. The fitting body comprises a cylindrical socket portion axially cylindrically extending from the fitting body ends and having an outer diameter equal to the inner diameter of the core. The socket portion has a sealing surface at its end. The fitting body further comprises a cylindrical securing portion axially extending from the fitting body ends and formed coaxially around the socket portion to form an insertions space. The securing portion has a securing wall facing the socket portion and holding, together with the socket portion, the tube inserted into the insertion space. The box nut comprises a holding surface facing the sealing surface. The box nut further has a female thread part on its inner surface and a polygonal thread head portion for turning it on its outer surface. The thread head portion is different in axial position from the female thread part and an outer surface which faces the female thread part is a complete round.
摘要翻译：连接管的树脂制可拆卸配件。该配件包括强制插入管端以使其膨胀的圆柱形或环形的芯体，具有内部通道的装配体和能够与配件主体的端部啮合并将管端连接到配件的盒形螺母身体。装配体包括圆柱形插座部分，其从配件主体端部轴向圆柱形延伸并且具有等于芯部的内径的外径。插座部分在其端部具有密封表面。装配体还包括圆柱形固定部分，其从装配体端部轴向延伸并同轴地形成在插座部分上以形成插入空间。固定部具有面向插座部的固定壁，并与插座部一起保持插入到插入空间中的管。箱形螺母包括面向密封表面的保持表面。箱形螺母在其内表面上还具有内螺纹部分，并且在其外表面上转动多边形螺纹头部。螺纹头部与内螺纹部的轴向位置不同，面向阴螺纹部的外表面为圆形。

3. 发明申请

US20060223256A1 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20060223256A1
公开(公告)日：2006-10-05
申请号：US11396921
申请日：2006-04-04
申请人： Masahiro Saitoh , Masahiko Yanagi , Toshiyuki Tohda
发明人： Masahiro Saitoh , Masahiko Yanagi , Toshiyuki Tohda
IPC分类号： H01L21/8238
CPC分类号： H01L29/7833 , H01L21/28114 , H01L21/28273 , H01L21/28282 , H01L29/42376 , H01L29/6656 , H01L29/66636 , H01L29/7834
摘要： A method of manufacturing a semiconductor memory device includes the steps of providing a gate insulating film on an active region, depositing a first conductive film on the gate insulating film, processing the first conductive film, the gate insulating film, and the active region to provide an opening of which the bottom is located below the interface between the active region and the gate insulating film and then providing a gate electrode between the openings, depositing a first insulating film which covers the side and bottom surface of the opening, depositing a second insulating film over the first insulating film, shaping the first and second insulating films into a side wall spacer shape by etching to provide charge retention sections beside the gate electrode and providing diffusion areas at opposite sides of the gate electrode beneath the charge retention sections in the active region.
摘要翻译：一种制造半导体存储器件的方法包括以下步骤：在有源区上提供栅极绝缘膜，在栅极绝缘膜上沉积第一导电膜，处理第一导电膜，栅极绝缘膜和有源区以提供其底部位于有源区域和栅极绝缘膜之间的界面下方的开口，然后在开口之间提供栅电极，沉积覆盖开口的侧表面和底表面的第一绝缘膜，沉积第二绝缘体在第一绝缘膜上形成膜，通过蚀刻将第一和第二绝缘膜成形为侧壁间隔物形状，以在栅电极旁边提供电荷保持部分，并且在活性物质的电荷保持部分之下的栅电极的相对侧提供扩散区域地区。

4. 发明授权

US4889678A Casting a plastic windshield 失效
标题翻译：铸塑料挡风玻璃
公开(公告)号：US4889678A
公开(公告)日：1989-12-26
申请号：US200619
申请日：1988-05-31
申请人： Keiichi Obata , Suguru Yoshida , Masahiro Saitoh , Yoshinobu Ono
发明人： Keiichi Obata , Suguru Yoshida , Masahiro Saitoh , Yoshinobu Ono
IPC分类号： B29C37/00 , B29C39/26 , B29C39/32 , B29C39/40 , B29C39/02
CPC分类号： B29C39/40 , B29C37/005 , B29C39/265 , B29C39/32
摘要： An elongate packing is sandwiched between two sheet-like mold members in an encircling manner to define a mold cavity therebetween, then a thermosetting plastic material is poured into the mold cavity, and the thermosetting plastic material is heated and set in the mold cavity. The upper and lower mold members are held against deformation transverse thereof so as not to be deformed by the shrinkage of the thermosetting plastic material when the latter is set, and the packing is allowed to move transversely thereof for following the shrinkage of the thermosetting plastic material when the latter is set. In some embodiments, the packing comprises a packing body adapted to be sandwiched between the mold members for preventing the plastic material from flowing out of the mold cavity with a flange joined to the packing body and adapted to be held against peripheral edges of the mold members.

5. 发明申请

US20090161408A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20090161408A1
公开(公告)日：2009-06-25
申请号：US12440207
申请日：2007-11-29
申请人： Hiroki Tanigami , Masahiro Saitoh , Takayuki Taniguchi
发明人： Hiroki Tanigami , Masahiro Saitoh , Takayuki Taniguchi
IPC分类号： G11C11/00 , G11C11/416
CPC分类号： G11C13/0007 , G11C13/0064 , G11C13/0069 , G11C2013/0088 , G11C2013/009 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/79
摘要： A semiconductor memory device comprises a memory cell array including memory cells arranged in matrix each having a selective transistor and a variable resistance element having an electric resistance changed from a first state to a second state by applying a first write voltage and from the second state to the first state by applying a second write voltage. A first write current for a first writing operation to change the electric resistance from the first state to the second state is larger than a second write current for a second writing operation to change it from the second state to the first state. A second memory cell number of memory cells subjected to the second writing operation at a time is greater than a first memory cell number of memory cells subjected to the first writing operation at a time. At least the second memory cell number is plural.
摘要翻译：半导体存储器件包括：存储单元阵列，其包括以矩阵形式排列的每个具有选择晶体管的存储单元和通过施加第一写入电压而从第一状态改变到第二状态的电阻的可变电阻元件，并且从第二状态到第一状态通过施加第二写入电压。用于将电阻从第一状态改变到第二状态的第一写入操作的第一写入电流大于用于将第二写入操作从第二状态改变到第一状态的第二写入电流。一次受到第二次写入操作的存储器单元的第二存储单元数量大于经历第一次写入操作的存储单元的第一存储单元数。至少第二存储单元号是多个。

6. 发明授权

US07335581B2 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07335581B2
公开(公告)日：2008-02-26
申请号：US11396921
申请日：2006-04-04
申请人： Masahiro Saitoh , Masahiko Yanagi , Toshiyuki Tohda
发明人： Masahiro Saitoh , Masahiko Yanagi , Toshiyuki Tohda
IPC分类号： H01L21/3205
CPC分类号： H01L29/7833 , H01L21/28114 , H01L21/28273 , H01L21/28282 , H01L29/42376 , H01L29/6656 , H01L29/66636 , H01L29/7834
摘要： A method of manufacturing a semiconductor memory device includes the steps of providing a gate insulating film on an active region, depositing a first conductive film on the gate insulating film, processing the first conductive film, the gate insulating film, and the active region to provide an opening of which the bottom is located below the interface between the active region and the gate insulating film and then providing a gate electrode between the openings, depositing a first insulating film which covers the side and bottom surface of the opening, depositing a second insulating film over the first insulating film, shaping the first and second insulating films into a side wall spacer shape by etching to provide charge retention sections beside the gate electrode and providing diffusion areas at opposite sides of the gate electrode beneath the charge retention sections in the active region.
摘要翻译：一种制造半导体存储器件的方法包括以下步骤：在有源区上提供栅极绝缘膜，在栅极绝缘膜上沉积第一导电膜，处理第一导电膜，栅极绝缘膜和有源区以提供其底部位于有源区域和栅极绝缘膜之间的界面下方的开口，然后在开口之间提供栅电极，沉积覆盖开口的侧表面和底表面的第一绝缘膜，沉积第二绝缘体在第一绝缘膜上形成膜，通过蚀刻将第一和第二绝缘膜成形为侧壁间隔物形状，以在栅电极旁边提供电荷保持部分，并且在活性物质的电荷保持部分之下的栅电极的相对侧提供扩散区域地区。

7. 发明申请

US20080007993A1 Semiconductor memory device 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20080007993A1
公开(公告)日：2008-01-10
申请号：US11822123
申请日：2007-07-02
申请人： Masahiro Saitoh , Shinichi Sato
发明人： Masahiro Saitoh , Shinichi Sato
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/31 , G11C2213/32 , G11C2213/79
摘要： A semiconductor memory device comprises writing means for performing a first writing action for shifting an electric resistance of a variable resistance element from a first state to a second state by applying a first voltage between both ends of a memory cell and a gate potential to a gate of a cell access transistor, and a second writing action for shifting the electric resistance from the second state to the first state by applying a second voltage having a polarity opposite to that of the first voltage between both ends of the memory cell and a gate potential to the gate of the cell access transistor, and the polarity and absolute value of the voltage to be applied to both ends of the variable resistance element in the memory cell to be written in the first writing action is different from those in the second writing action.
摘要翻译：半导体存储器件包括写入装置，用于通过在存储单元的两端和栅极电位之间施加第一电压来执行用于将可变电阻元件的电阻从第一状态移位到第二状态的第一写入动作以及第二写入动作，用于通过施加具有与存储单元的两端之间的第一电压的极性相反的极性的第二电压和栅极电位，将电阻从第二状态移位到第一状态到单元存取晶体管的栅极，并且要写入第一写入动作的存储单元中的可变电阻元件的两端的施加电压的极性和绝对值与第二写入动作中的不同。

8. 发明申请

US20060186447A1 Semiconductor memory and method for fabricating the same 审中-公开
标题翻译：半导体存储器及其制造方法
公开(公告)号：US20060186447A1
公开(公告)日：2006-08-24
申请号：US11357965
申请日：2006-02-22
申请人： Masahiro Saitoh
发明人： Masahiro Saitoh
IPC分类号： H01L29/94
CPC分类号： H01L29/66833 , H01L27/115 , H01L29/40117 , H01L29/7923
摘要： A semiconductor memory includes: a semiconductor substrate having a protrusion; a gate insulating film formed on an upper surface of the protrusion; a gate electrode formed on the gate insulating film; diffusion regions formed in portions of the substrate on both sides of the protrusion, the diffusion regions being disposed so as to reach edges of side surfaces of the protrusion; a channel region between the diffusion regions, the channel region being located below the gate electrode; and a charge-retaining portion formed on at least one side surface of the protrusion.
摘要翻译：半导体存储器包括：具有突起的半导体衬底; 形成在所述突起的上表面上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 所述扩散区域形成在所述突起的两侧的所述基板的一部分中，所述扩散区域设置成到达所述突起的侧表面的边缘; 所述扩散区域之间的沟道区域，所述沟道区域位于所述栅极电极下方; 以及形成在所述突起的至少一个侧表面上的电荷保持部。

9. 发明授权

US5658926A Carbostyril derivative and platelets aggregation inhibitory agent 失效
标题翻译：卡波他汀衍生物和血小板聚集抑制剂
公开(公告)号：US5658926A
公开(公告)日：1997-08-19
申请号：US541579
申请日：1995-10-10
申请人： Seiji Sato , Hirotaka Yukawa , Yoshito Kihara , Nobuyuki Koga , Masahiro Saitoh , Takao Nishi
发明人： Seiji Sato , Hirotaka Yukawa , Yoshito Kihara , Nobuyuki Koga , Masahiro Saitoh , Takao Nishi
IPC分类号： C07D215/22 , C07D215/227 , C07D215/36 , C07D401/12 , C07D401/14 , C07D405/14 , C07D409/14 , C07D417/12 , C07D491/10 , C07D521/00 , A61K31/47
CPC分类号： C07D215/227 , C07D215/36 , C07D231/12 , C07D233/56 , C07D249/08 , C07D401/12 , C07D401/14 , C07D405/14 , C07D409/14 , C07D417/12 , C07D491/10
摘要： The present invention provides a carbostyril derivative represented by the following general formula ##STR1## (wherein A, R and W have the same definitions as given above; and the carbon-to-carbon bond between the 3- and 4-positions of the carbostyril skeleton represents a single bond or a double bond.Said carbostyril derivative is useful as a platelets aggregation inhibitory agent.
摘要翻译：本发明提供由上述给出的以下一般配方代表的喹诺酮衍生物; 喹诺酮骨架的3-和4-位之间的碳 - 碳键代表单键或双键。所述喹诺酮衍生物可用作血小板聚集抑制剂。

10. 发明授权

US08059448B2 Semiconductor memory device with variable resistance elements 有权
标题翻译：半导体存储器件具有可变电阻元件
公开(公告)号：US08059448B2
公开(公告)日：2011-11-15
申请号：US12440207
申请日：2007-11-29
申请人： Hiroki Tanigami , Masahiro Saitoh , Takayuki Taniguchi
发明人： Hiroki Tanigami , Masahiro Saitoh , Takayuki Taniguchi
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/0007 , G11C13/0064 , G11C13/0069 , G11C2013/0088 , G11C2013/009 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/79
摘要： A semiconductor memory device comprises a memory cell array including memory cells arranged in matrix each having a selective transistor and a variable resistance element having an electric resistance changed from a first state to a second state by applying a first write voltage and from the second state to the first state by applying a second write voltage. A first write current for a first writing operation to change the electric resistance from the first state to the second state is larger than a second write current for a second writing operation to change it from the second state to the first state. A second memory cell number of memory cells subjected to the second writing operation at a time is greater than a first memory cell number of memory cells subjected to the first writing operation at a time. At least the second memory cell number is plural.
摘要翻译：半导体存储器件包括：存储单元阵列，其包括以矩阵形式排列的每个具有选择晶体管的存储单元和通过施加第一写入电压而从第一状态改变到第二状态的电阻的可变电阻元件，并且从第二状态到第一状态通过施加第二写入电压。用于将电阻从第一状态改变到第二状态的第一写入操作的第一写入电流大于用于将第二写入操作从第二状态改变到第一状态的第二写入电流。一次受到第二次写入操作的存储器单元的第二存储单元数量大于经历第一次写入操作的存储单元的第一存储单元数。至少第二存储单元号是多个。

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