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1. 发明申请

US20060172512A1 Substrate of gallium nitride single crystal and process for producing the same 有权
标题翻译：氮化镓单晶衬底及其制造方法
公开(公告)号：US20060172512A1
公开(公告)日：2006-08-03
申请号：US10546983
申请日：2004-03-04
申请人： Kazumasa Hiramatsu , Hideto Miyake , Shinya Bohyama , Takayoshi Maeda , Yoshinobu Ono
发明人： Kazumasa Hiramatsu , Hideto Miyake , Shinya Bohyama , Takayoshi Maeda , Yoshinobu Ono
IPC分类号： H01L21/20
CPC分类号： H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647
摘要： The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.
摘要翻译：本发明涉及一种用于制造具有由通式为III-V族化合物半导体晶体表示的外延基板的方法，该III-V族化合物半导体晶体由以下通式表示：＆lt; N（其中，x + y + z = 1,0 <= x <=1,0,0≤i≤1,0<= z <= 1）具有降低的位错密度，包括第一步覆盖具有由与III-V族化合物半导体不同的材料制成的掩模，使得通过使用具有多个投影形状的III-V族化合物半导体晶体，仅使晶体周围的部分构成开口，第二步是使 III-V族化合物半导体晶体通过在开口处使用III-V族化合物半导体晶体作为晶种横向。根据本发明，获得具有位错密度低且翘曲少的III-V族化合物半导体晶体的外延基板。

2. 发明授权

US07399687B2 Substrate of gallium nitride single crystal and process for producing the same 有权
标题翻译：氮化镓单晶衬底及其制造方法
公开(公告)号：US07399687B2
公开(公告)日：2008-07-15
申请号：US10546983
申请日：2004-03-04
申请人： Kazumasa Hiramatsu , Hideto Miyake , Shinya Bohyama , Takayoshi Maeda , Yoshinobu Ono
发明人： Kazumasa Hiramatsu , Hideto Miyake , Shinya Bohyama , Takayoshi Maeda , Yoshinobu Ono
IPC分类号： H01L21/20
CPC分类号： H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647
摘要： The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) having reduced dislocation density, comprising a first step of covering with a mask made of a different material from the III-V group compound semiconductor so that only portions around points of the crystal constitute openings by using a III-V group compound semiconductor crystal having a plurality of projection shapes and a second step of growing the III-V group compound semiconductor crystal laterally by using the III-V group compound semiconductor crystal at the opening as a seed crystal. According to the present invention, an epitaxial substrate having a III-V group compound semiconductor crystal having low dislocation density and little warp is obtained.
摘要翻译：本发明涉及一种用于制造具有由通式为III-V族化合物半导体晶体表示的外延基板的方法，该III-V族化合物半导体晶体由以下通式表示：＆lt; N（其中，x + y + z = 1,0 <= x <=1,0,0≤i≤1,0<= z <= 1）具有降低的位错密度，包括第一步覆盖具有由与III-V族化合物半导体不同的材料制成的掩模，使得通过使用具有多个投影形状的III-V族化合物半导体晶体，仅使晶体周围的部分构成开口，第二步是使 III-V族化合物半导体晶体通过在开口处使用III-V族化合物半导体晶体作为晶种横向。根据本发明，获得具有位错密度低且翘曲少的III-V族化合物半导体晶体的外延基板。

3. 发明申请

US20090085165A1 Group 3-5 Nitride Semiconductor Multilayer Substrate, Method for Manufacturing Group 3-5 Nitride Semiconductor Free-Standing Subtrate, and Semiconductor Element 失效
标题翻译：第3-5族氮化物半导体多层基板，制造方法3-5氮化硅半导体自由放电，半导体元件
公开(公告)号：US20090085165A1
公开(公告)日：2009-04-02
申请号：US11920563
申请日：2006-05-02
申请人： Kazumasa Hiramatsu , Hideto Miyake , Yoshihiko Tsuchida , Yoshinobu Ono , Naohiro Nishikawa
发明人： Kazumasa Hiramatsu , Hideto Miyake , Yoshihiko Tsuchida , Yoshinobu Ono , Naohiro Nishikawa
IPC分类号： H01L21/20 , H01L29/20
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01S2304/12
摘要： A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).
摘要翻译：提供3-5族氮化物半导体多层基板（1）及其制造方法。半导体层（12）形成在基底（11）上，在半导体层（12）上形成掩模（13）。然后，通过选择性生长形成3-5族氮化物半导体结晶层（14）后，分离3-5族氮化物半导体结晶层（14）和基底基板（11）。半导体层（12）的结晶度低于3-5族氮化物半导体晶体层（14）的结晶度。

4. 发明授权

US08053811B2 Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element 失效
标题翻译： 3-5族氮化物半导体多层基板，第3-5族氮化物半导体独立减渣剂的制造方法以及半导体元件
公开(公告)号：US08053811B2
公开(公告)日：2011-11-08
申请号：US11920563
申请日：2006-05-02
申请人： Kazumasa Hiramatsu , Hideto Miyake , Yoshihiko Tsuchida , Yoshinobu Ono , Naohiro Nishikawa
发明人： Kazumasa Hiramatsu , Hideto Miyake , Yoshihiko Tsuchida , Yoshinobu Ono , Naohiro Nishikawa
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01S2304/12
摘要： A group 3-5 nitride semiconductor multilayer substrate (1) and a method for manufacturing such substrate are provided. A semiconductor layer (12) is formed on a base substrate (11), and a mask (13) is formed on the semiconductor layer (12). Then, after forming a group 3-5 nitride semiconductor crystalline layer (14) by selective growing, the group 3-5 nitride semiconductor crystalline layer (14) and the base substrate (11) are separated. The crystallinity of the semiconductor layer (12) is lower than that of the group 3-5 nitride semiconductor crystalline layer (14).
摘要翻译：提供3-5族氮化物半导体多层基板（1）及其制造方法。半导体层（12）形成在基底（11）上，在半导体层（12）上形成掩模（13）。然后，通过选择性生长形成3-5族氮化物半导体结晶层（14）后，分离3-5族氮化物半导体结晶层（14）和基底基板（11）。半导体层（12）的结晶度低于3-5族氮化物半导体晶体层（14）的结晶度。

5. 发明授权

US08927978B2 Organic EL element 有权
标题翻译：有机EL元件
公开(公告)号：US08927978B2
公开(公告)日：2015-01-06
申请号：US13811107
申请日：2011-07-20
申请人： Shoji Mima , Yoshinobu Ono
发明人： Shoji Mima , Yoshinobu Ono
IPC分类号： H01L51/00 , H01L21/31 , H01L51/50 , H01L51/56 , H05B33/26 , H01L51/52
CPC分类号： H01L51/56 , C08G61/02 , C08G2261/11 , C08G2261/124 , C08G2261/135 , C08G2261/1412 , C08G2261/1424 , C08G2261/1426 , C08G2261/148 , C08G2261/314 , C08G2261/3142 , C08G2261/3162 , C08G2261/411 , C08G2261/514 , C08G2261/76 , C08G2261/95 , H01L51/0005 , H01L51/0022 , H01L51/0039 , H01L51/0043 , H01L51/5032 , H01L51/5048 , H01L51/5092 , H01L51/5221 , H05B33/26
摘要： An object of the invention is to provide an organic electroluminescence (EL) element formed using a relatively stable new electron injection material in an atmosphere of approximately ordinary pressure. An organic EL element of a preferable embodiment is an organic EL element including a supporting substrate, an anode, a light-emitting layer, an electron injection layer, and a cathode in this order, in which the electron injection layer is formed by applying an ink including an ionic polymer so as to form a film, and the cathode is formed by applying an ink including a material which forms the cathode so as to form a film or transferring a conductive thin film which forms the cathode.
摘要翻译：本发明的目的是提供一种在大约普通压力的气氛中使用相对稳定的新型电子注入材料形成的有机电致发光（EL）元件。优选实施例的有机EL元件是依次包括支撑基板，阳极，发光层，电子注入层和阴极的有机EL元件，其中通过施加电子注入层形成电子注入层包括离子聚合物的油墨以形成膜，阴极通过涂覆包含形成阴极的材料的油墨形成，以便形成膜或转移形成阴极的导电薄膜。

6. 发明授权

US08097891B2 Group III nitride semiconductor light emitting device and method for producing the same 有权
标题翻译： III族氮化物半导体发光器件及其制造方法
公开(公告)号：US08097891B2
公开(公告)日：2012-01-17
申请号：US12223986
申请日：2007-02-13
申请人： Kenji Kasahara , Kazumasa Ueda , Yoshinobu Ono
发明人： Kenji Kasahara , Kazumasa Ueda , Yoshinobu Ono
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/22 , H01L33/32 , H01L33/42
摘要： The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm−3 to 5×1020 cm−3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.
摘要翻译：本发明提供一种III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光元件依次包括（a1），（b1）和（c1）：（a1）N电极，（b1）半导体多层膜，（c1）透明导电氧化物P 电极，其中所述半导体多层膜包括N型半导体层，发光层，P型半导体层和n型杂质浓度为5×10 18 cm -3〜5的高浓度N型半导体层 ×1020cm-3，N型半导体层与N电极接触，半导体多层膜具有凸面。

7. 发明授权

US07897993B2 GaN based luminescent device on a metal substrate 有权
标题翻译： GaN基发光器件在金属衬底上
公开(公告)号：US07897993B2
公开(公告)日：2011-03-01
申请号：US11661266
申请日：2005-08-30
申请人： Yoshinobu Ono , Sadanori Yamanaka
发明人： Yoshinobu Ono , Sadanori Yamanaka
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007
摘要： A compound semiconductor luminescent device characterized by comprising an electroconductive substrate, a compound semiconductor function layer including a GaN layer, an electrode, an adhesiveness-enhancing layer, and a bonding layer, which are stacked in this order wherein the above-described electroconductive substrate includes a metal material that indicates a thermal expansion coefficient different by 1.5×10−6/° C. or less from GaN.
摘要翻译：一种化合物半导体发光装置，其特征在于，包括导电性基板，包含GaN层的化合物半导体功能层，电极，粘合性增强层和接合层，其中，上述导电性基板包括表示与GaN不同的热膨胀系数为1.5×10 -6 /℃以下的金属材料。

8. 发明申请

US20100155754A1 Group III Nitride Semiconductor Light Emitting Device and Method for Producing the Same 有权
标题翻译：第III族氮化物半导体发光装置及其制造方法
公开(公告)号：US20100155754A1
公开(公告)日：2010-06-24
申请号：US12223986
申请日：2007-02-13
申请人： Kenji Kasahara , Kazumasa Ueda , Yoshinobu Ono
发明人： Kenji Kasahara , Kazumasa Ueda , Yoshinobu Ono
IPC分类号： H01L33/58 , H01L21/30
CPC分类号： H01L33/025 , H01L33/22 , H01L33/32 , H01L33/42
摘要： The present invention provides a group III nitride semiconductor light emitting device and a method for producing the same. The group III nitride semiconductor light emitting device comprises (a1), (b1) and (c1) in this order: (a1) an N electrode, (b1) a semiconductor multi-layer film, (c1) a transparent electric conductive oxide P electrode, wherein the semiconductor multi-layer film comprises an N-type semiconductor layer, light emitting layer, P-type semiconductor layer and high concentration N-type semiconductor layer having an n-type impurity concentration of 5×1018 cm−3 to 5×1020 cm−3 in this order, the N-type semiconductor layer is in contact with the N electrode, and the semiconductor multi-layer film has a convex.
摘要翻译：本发明提供一种III族氮化物半导体发光器件及其制造方法。 III族氮化物半导体发光元件依次包括（a1），（b1）和（c1）：（a1）N电极，（b1）半导体多层膜，（c1）透明导电氧化物P 电极，其中所述半导体多层膜包括N型半导体层，发光层，P型半导体层和n型杂质浓度为5×10 18 cm -3〜5的高浓度N型半导体层 ×1020cm-3，N型半导体层与N电极接触，半导体多层膜具有凸面。

9. 发明申请

US20100094378A1 PAIN SENSORY NERVE STIMULATION APPARATUS 有权
标题翻译：疼痛感觉神经刺激装置
公开(公告)号：US20100094378A1
公开(公告)日：2010-04-15
申请号：US12570213
申请日：2009-09-30
申请人： Koji INUI , Yasuyuki Takeshima , Jun Motogi , Yoshinobu Ono , Takeshi Kojima , Ryosuke Ushijima , Katsumi Nakaichi , Kazuwa Shibuya
发明人： Koji INUI , Yasuyuki Takeshima , Jun Motogi , Yoshinobu Ono , Takeshi Kojima , Ryosuke Ushijima , Katsumi Nakaichi , Kazuwa Shibuya
IPC分类号： A61N1/34
CPC分类号： A61N1/0456 , A61B5/04001 , A61B5/4824 , A61N1/0472 , A61N1/0502 , A61N1/36017 , A61N1/36021
摘要： A pain sensory nerve stimulation apparatus includes: an electrode portion including: a first electrode, a tip end of which is adapted to be inserted into a skin; and at lease one second electrode which is disposed in a circumference of the first electrode without being electrically conductive with the first electrode, and which is adapted to be in contact with a skin; and a pulse signal supplier, supplying a pulse signal in which an electrical polarity of the first electrode is set as a anode and an electrical polarity of the second electrode is set as a cathode.
摘要翻译：疼痛感觉神经刺激装置包括：电极部，包括：第一电极，其前端适于插入皮肤; 以及至少一个第二电极，其设置在所述第一电极的圆周中，而不与所述第一电极导电，并且适于与皮肤接触; 以及脉冲信号供给器，将设置有第一电极的电极性的脉冲信号设定为阳极，将第二电极的电极性设定为阴极。

10. 发明申请

US20090114944A1 Method for Fine Processing of Substrate, Method for Fabrication of Substrate, and Light Emitting Device 有权
标题翻译：基板精加工方法，基板加工方法及发光装置
公开(公告)号：US20090114944A1
公开(公告)日：2009-05-07
申请号：US12294963
申请日：2007-03-30
申请人： Yoshinobu Ono , Kenji Kasahara , Kazumasa Ueda
发明人： Yoshinobu Ono , Kenji Kasahara , Kazumasa Ueda
IPC分类号： H01L33/00 , B44C1/22 , H01L21/306
CPC分类号： H01L21/30608 , H01L21/308 , H01L33/20 , H01L33/22 , H01L33/24 , H01L2933/0083 , Y10S977/856
摘要： The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the single particle layer, a hole having an inner diameter smaller than a diameter of a particle and centering on a position on the substrate where each particle constructing the single particle layer has been placed is formed by etching. The method for fabrication of a substrateincludesthefollowingsteps (I) to (V) inthisorder: (I) forming the single particle layer by arranging the particles on the substrate; (II) reducing the diameter of each of the particles by etching the obtained substrate; (III) forming a thin film composed of a mask material on the obtained substrate; (IV) removing the particle from the substrate and forming a mask having a hole with an inner diameter equivalent to the diameter of the particle at the position where the individual particle has existed; and (V) forming a hole with a diameter equivalent to the inner diameter of the hole of the mask on the substrate below the hole of the mask by etching the substrate using the mask. The light emitting device is made of a nitride semiconductor and is formed with a fine hole on an entire surface or a partial region of a light extraction surface and/or an opposing surface.
摘要翻译：本发明提供了一种基板的精细加工方法，基板的制造方法以及发光装置。在基板精细加工方法中，在从具有单一颗粒层的基板除去单个颗粒层之后，具有内径小于颗粒直径的孔并且以基体上的每个颗粒构成的位置为中心已经放置的单个颗粒层通过蚀刻形成。本发明的制造方法包括以下步骤（I）至（V）：（I）通过将颗粒布置在基材上形成单个颗粒层; （II）通过蚀刻所获得的基板来减小每个颗粒的直径; （III）在所得基板上形成由掩模材料构成的薄膜; （IV）从基板上除去粒子，形成具有与粒子的存在直径相当的粒径的孔的掩模，以及（V）通过使用掩模蚀刻基板，在掩模的孔下面的基板上形成具有与掩模的孔的内径相当的直径的孔。发光器件由氮化物半导体制成，并且在光提取表面和/或相对表面的整个表面或部分区域上形成有细孔。

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