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41. 发明授权

US5481119A Superconducting weak-link bridge 失效
标题翻译：超导弱连桥
公开(公告)号：US5481119A
公开(公告)日：1996-01-02
申请号：US926020
申请日：1992-08-07
申请人： Hidetaka Higashino , Koichi Mizuno , Kentaro Setsune
发明人： Hidetaka Higashino , Koichi Mizuno , Kentaro Setsune
IPC分类号： H01L39/22 , H01L39/24
CPC分类号： H01L39/2496
摘要： A superconducting element includes a superconducting thin film bridge extending along the surface of a substrate, and a control electrode member for injecting quasi particles into a portion of an intersection region of the superconducting thin film bridge. The intersection region extends across the superconducting thin film bridge in a direction which is perpendicular to the current flow direction of the superconducting thin film bridge. A remaining portion of the intersection region, which is not injected with quasi particles by the control electrode member, operates as a weak-coupling bridge to thereby control the current flow within the superconducting thin film bridge.
摘要翻译：超导元件包括沿着衬底的表面延伸的超导薄膜电桥，以及用于将准微粒注入到超导薄膜桥的交叉区域的一部分中的控制电极构件。交叉区域在垂直于超导薄膜桥的电流流动方向的方向上延伸穿过超导薄膜桥。通过控制电极部件没有注入准粒子的交叉区域的剩余部分作为弱耦合桥作用，从而控制超导薄膜桥内的电流。

42. 再颁专利

USRE36814E Superconductor 失效
标题翻译：超导体
公开(公告)号：USRE36814E
公开(公告)日：2000-08-08
申请号：US35783
申请日：1998-03-06
申请人： Shinichiro Hatta , Hidetaka Higashino , Kumiko Hirochi , Hideaki Adachi
发明人： Shinichiro Hatta , Hidetaka Higashino , Kumiko Hirochi , Hideaki Adachi
IPC分类号： H01L39/24 , B32B9/00 , H01L39/00
CPC分类号： H01L39/2435 , H01L39/2458 , H01L39/2461 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T428/265 , Y10T428/31678
摘要： Excellent films of a high Tc superconductor are easily produced on metal coated substrates at a temperature below 700.degree. C. These metal buffer films are made of Pt, Au, Ag, Pd, Ni or Ti. The film superconductivity is significantly improved by the metal buffer layer. Since it is easy to form this metal coating on a substrate, the invention can increase the potential number of usable substrates such as fibers, amorphous solids or semiconductors.
摘要翻译：在低于700℃的温度下，在金属涂覆的基板上容易制造出高Tc超导体的优良膜。这些金属缓冲膜由Pt，Au，Ag，Pd，Ni或Ti制成。金属缓冲层显着提高了膜的超导性。由于容易在基板上形成该金属涂层，因此本发明可以增加可用的基材例如纤维，无定形固体或半导体的潜在数量。

43. 发明授权

US6016434A High-frequency circuit element in which a resonator and input/ouputs are relatively movable 失效
标题翻译：谐振器和输入/输出相对可移动的高频电路元件
公开(公告)号：US6016434A
公开(公告)日：2000-01-18
申请号：US765587
申请日：1996-12-17
申请人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
发明人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
IPC分类号： H01P1/203 , H01P7/08
CPC分类号： H01P1/20381 , H01P1/203 , H01P7/082 , H01P7/086 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).
摘要翻译： PCT No.PCT / JP95 / 01168 Sec。 371日期1996年12月17日第 102（e）日期1996年12月17日PCT提交1995年6月9日PCT公布。公开号WO95 / 35584 日期1995年12月28日在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和所述输入输出端子（13）形成为相对的。通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。

44. 发明授权

US5661112A Superconductor 失效
标题翻译：超导体
公开(公告)号：US5661112A
公开(公告)日：1997-08-26
申请号：US223016
申请日：1988-07-22
申请人： Shinichiro Hatta , Hidetaka Higashino , Kumiko Hirochi , Hideaki Adachi
发明人： Shinichiro Hatta , Hidetaka Higashino , Kumiko Hirochi , Hideaki Adachi
IPC分类号： H01L39/24 , B32B9/00
CPC分类号： H01L39/2435 , H01L39/2458 , H01L39/2461 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T428/265 , Y10T428/31678
摘要： Excellent films of a high Tc superconductor are easily produced on metal coated substrates at a temperature below 700.degree. C. These metal buffer films are made of Pt, Au, Ag, Pd, Ni or Ti. The film superconductivity is significantly improved by the metal buffer layer. Since it is easy to form this metal coating on a substrate, the invention can increase the potential number of usable substrates such as fibers, amorphous solids or semiconductors.
摘要翻译：在低于700℃的温度下，在金属涂覆的基板上容易制造出高Tc超导体的优良膜。这些金属缓冲膜由Pt，Au，Ag，Pd，Ni或Ti制成。金属缓冲层显着提高了膜的超导性。由于容易在基板上形成该金属涂层，因此本发明可以增加可用的基材例如纤维，无定形固体或半导体的潜在数量。

45. 发明授权

US4731172A Method for sputtering multi-component thin-film 失效
标题翻译：溅射多组分薄膜的方法
公开(公告)号：US4731172A
公开(公告)日：1988-03-15
申请号：US856783
申请日：1986-04-17
申请人： Hideaki Adachi , Hidetaka Higashino , Tsuneo Mitsuyu , Osamu Yamazaki
发明人： Hideaki Adachi , Hidetaka Higashino , Tsuneo Mitsuyu , Osamu Yamazaki
IPC分类号： C23C14/02 , C23C14/08 , C23C14/22 , C23C14/35 , H01L21/314 , H01L21/316 , C23C14/34
CPC分类号： C23C14/225 , C23C14/024 , C23C14/088 , C23C14/352 , H01L21/02197 , H01L21/02266 , H01L21/31691
摘要： A underlying layer of multi-component material of a first formula is deposited on a substrate by controlling the amounts of sputtering materials evaporated respectively from a plurality of sputtering sources. A transition layer of multi-component material is subsequently formed on the underlying layer by controlling the amounts of the sputtering materials so that the transition layer is given a second, variable formula varying in a range from the first formula at the boundary between the underlying layer and the transition layer to a third formula. An overlying layer of multi-component material of the third formula is subsequently formed on the transition layer by controlling the amounts of the sputtering materials. Specifically, the first formula is [Pb.sub.1-(x/100) La.sub.x/100 ][Zr.sub.y/100 Ti.sub.z/100 ].sub.w O.sub.3, in which 10.ltoreq.x.ltoreq.40, y.ltoreq.5, w=1-(x/400) and y+z=100, and the third formula is [Pb.sub.1-(X/100) La.sub.X/100 ] [Zr.sub.Y/100 Ti.sub.Z/100 ].sub.W O.sub.3, in which X.ltoreq.20, 40.ltoreq.Y.ltoreq.90, W=1-(X/400) and Y+Z=100.
摘要翻译：通过控制分别从多个溅射源蒸发的溅射材料的量，将第一配方的多组分材料的下层沉积在基板上。随后通过控制溅射材料的量，在底层上形成多组分材料的过渡层，使得过渡层被赋予第二个可变公式，其变化范围从第一公式在下层和过渡层到第三个公式。随后通过控制溅射材料的量在过渡层上形成第三配方的多组分材料的上覆层。具体地说，第一公式为[Pb1-（x / 100）Lax / 100] [Zry / 100Tiz / 100] wO3，其中10≤x≤40，y = 5，w = 1-（ x / 400）和y + z = 100，第三式为[Pb1-（X / 100）LaX / 100] [ZrY / 100TiZ / 100] WO3，其中X = 20,40 <

46. 发明授权

US07030839B2 Method for driving plasma display panel and plasma display panel 失效
标题翻译：驱动等离子体显示面板和等离子体显示面板的方法
公开(公告)号：US07030839B2
公开(公告)日：2006-04-18
申请号：US10149568
申请日：2000-12-08
申请人： Hidetaka Higashino , Nobuaki Nagao
发明人： Hidetaka Higashino , Nobuaki Nagao
IPC分类号： G09G3/28
CPC分类号： G09G3/293 , G09G2320/0209
摘要： A plasma display panel (PDP) drive method eliminates crosstalk and allows for high quality image display by preventing erroneous discharge from occurring in an address period. The method includes an address step of writing data by applying an address pulse to a third electrode and a scan pulse Pas1 sequentially to first electrodes, and a sustain step of sustaining an illumination by applying sustain pulses between first and second electrodes after completion of the address step. Furthermore, in the address step, a scan pulse Pas2 of opposite polarity to scan pulse Pas1 is applied to a second electrode in a pair with a first electrode in a selected line (i.e. a line in which scan pulse Pas1 is being applied).
摘要翻译：等离子体显示面板（PDP）驱动方法消除了串扰，并且通过防止在寻址周期中发生错误放电而允许高质量的图像显示。该方法包括通过向第一电极顺序施加地址脉冲至扫描脉冲Pas 1而写入数据的寻址步骤，以及在完成第一电极之后在第一和第二电极之间施加维持脉冲来维持照明的维持步骤地址步骤此外，在寻址步骤中，将与扫描脉冲Pas 1相反极性的扫描脉冲Pas2与选择的行中的第一电极（即，施加扫描脉冲Pas 1的行）成对配对的第二电极）。

47. 发明授权

US06360111B1 High-frequency circuit element having a superconductive resonator with an electroconductive film about the periphery 有权
标题翻译：具有超导谐振器的高频电路元件，其周围具有导电膜
公开(公告)号：US06360111B1
公开(公告)日：2002-03-19
申请号：US09415117
申请日：1999-10-08
申请人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
发明人： Koichi Mizuno , Akira Enokihara , Hidetaka Higashino , Kentaro Setsune
IPC分类号： H01P708
CPC分类号： H01P1/20381 , H01P1/203 , H01P7/082 , H01P7/086 , Y10S505/70 , Y10S505/701 , Y10S505/866
摘要： In a small transmission line type high-frequency circuit element that has small loss due to conductor resistance and has a high Q value, an error in the dimension of a pattern, etc. can be corrected to adjust element characteristics. An elliptical shape resonator (12) that is formed of an electric conductor is formed on a substrate (11a), while a pair of input-output terminals (13) are formed on a substrate (11b). Substrate (11a) on which resonator (12) is formed and substrate (11b) on which input-output terminal (13) is formed are located parallel to each other, with a surface on which resonator (12) is formed and a surface on which input-output terminal (13) is formed being opposed. Substrates (11a) and (11b) that are located parallel to each other are relatively moved by a mechanical mechanism that uses a screw and moves slightly. Also, substrate (11a) is rotated by the mechanical mechanism that uses a screw and moves slightly around the center axis of resonator (12) as a rotation axis (18).
摘要翻译：在由于导体电阻导致的损耗小且具有高Q值的小型传输线型高频电路元件中，可以校正图案尺寸的误差等，以调整元件特性。在基板（11a）上形成由导体形成的椭圆形谐振器（12），而在基板（11b）上形成一对输入输出端子（13）。其上形成有谐振器（12）的基板（11a）和形成有输入输出端子（13）的基板（11b）彼此平行地设置有形成谐振器（12）的表面和所述输入输出端子（13）形成为相对的。通过使用螺钉并且稍微移动的机械机构相对地彼此平行地定位的基板（11a）和（11b）。此外，通过使用螺钉的机械机构使基板（11a）旋转，并且围绕谐振器（12）的中心轴线稍微移动作为旋转轴线（18）。

48. 发明授权

US5869846A Superconducting junction device 失效
标题翻译：超导接线装置
公开(公告)号：US5869846A
公开(公告)日：1999-02-09
申请号：US621819
申请日：1996-03-22
申请人： Hidetaka Higashino , Masahiro Sakai , Kentaro Setsune
发明人： Hidetaka Higashino , Masahiro Sakai , Kentaro Setsune
IPC分类号： H01L39/22 , H03B15/00 , H01L29/06
CPC分类号： H01L39/225 , H01L39/228
摘要： A superconducting junction device which is easily manufactured, multifunctional, and utilizes the superconducting Josephson effects is described. A first junction (Josephson junction) and a second junction (Josephson junction) are disposed o a substrate across a coupling portion of a dielectric. The first junction comprises a first upper electrode, a first barrier layer and a first lower electrode. The second junction comprises a second upper electrode, a second barrier layer and a second lower electrode. The first lower electrode and the second lower electrode are connected in series via a connecting electrode. A superconducting reflecting wall which is connected via the connecting electrode is provided around the two Josephson junctions including the coupling portion.
摘要翻译：描述了容易制造，多功能并且利用超导约瑟夫逊效应的超导接合装置。第一结（约瑟夫逊结）和第二结（Josephson结）被布置在跨越电介质的耦合部分的衬底上。第一结包括第一上电极，第一阻挡层和第一下电极。第二接头包括第二上电极，第二阻挡层和第二下电极。第一下电极和第二下电极通过连接电极串联连接。通过连接电极连接的超导反射壁设置在包括耦合部分的两个约瑟夫逊结周围。

49. 发明授权

US5480859A Bi-Sr-Ca-Cu-O superconductor junction through a Bi-Sr-Cu-O barrier layer 失效
标题翻译： Bi-Sr-Ca-Cu-O超导体结通过Bi-Sr-Cu-O势垒层
公开(公告)号：US5480859A
公开(公告)日：1996-01-02
申请号：US183795
申请日：1994-01-21
申请人： Koichi Mizuno , Hidetaka Higashino , Kentaro Setsune
发明人： Koichi Mizuno , Hidetaka Higashino , Kentaro Setsune
IPC分类号： H01L39/22 , H01L39/24 , H01L39/12
CPC分类号： H01L39/2493 , Y10S505/702
摘要： A superconductor device is provided including a base, a base electrode formed on the base which is made of a Bi-system oxide superconductive material containing an alkaline earth metal, a barrier layer formed on the base electrode which is made of Bi--Sr--Cu--O, a counter electrode formed on the barrier layer which is made of a Bi-system oxide superconductive material containing an alkaline earth metal, a contact electrode formed so as contact with the counter electrode, and a separation layer for separating said contact electrode from said base electrode.
摘要翻译：提供了一种超导体器件，包括基底，形成在基底上的基底电极，其由含有碱土金属的双系氧化物超导材料制成，在基极上形成的阻挡层由Bi-Sr-Cu -O，形成在由含有碱土金属的Bi系氧化物超导材料制成的阻挡层上的对电极，与对电极接触形成的接触电极和用于将接触电极分离的分离层所述基极。

50. 发明授权

US4980339A Superconductor structure 失效
标题翻译：超导体结构
公开(公告)号：US4980339A
公开(公告)日：1990-12-25
申请号：US223658
申请日：1988-07-25
申请人： Kentaro Setsune , Takeshi Kamada , Hideaki Adachi , Kiyotaka Wasa , Takashi Hirao , Osamu Yamazaki , Hidetaka Higashino
发明人： Kentaro Setsune , Takeshi Kamada , Hideaki Adachi , Kiyotaka Wasa , Takashi Hirao , Osamu Yamazaki , Hidetaka Higashino
IPC分类号： H01L39/24
CPC分类号： H01L39/2461 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： A superconductor structure of very high performance is realized by forming a crystalline coating on a substrate of semiconductor, etc. and epitaxially depositing a crystalline superconductor film of good quality on this crystalline coating. Especially, CaF.sub.2 crystal and ZrO.sub.2 crystal of CaF.sub.2 crystal structure have latice constants which match well with the substrate such as Si, GaAs, etc. and the superconductor. The crystalline coating may be a perovskite material such as BaTiO.sub.3 when the superconductor is a perovskite material.

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