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41. 发明申请

US20070001271A1 Lead frame and method of manufacturing the lead frame 失效
标题翻译：引线框架和引线框架的制造方法
公开(公告)号：US20070001271A1
公开(公告)日：2007-01-04
申请号：US10569577
申请日：2003-08-29
申请人： Fujio Ito , Hiromichi Suzuki , Toshio Sasaki
发明人： Fujio Ito , Hiromichi Suzuki , Toshio Sasaki
IPC分类号： H01L23/495
CPC分类号： H01L23/49541 , H01L21/4842 , H01L23/49558 , H01L2924/0002 , H01L2924/00
摘要： A plurality of inner leads, a plurality of outer leads formed in one with each of the inner lead, a bar lead of the square ring shape arranged inside a plurality of inner leads, a corner part lead which has been arranged between the inner leads of the end portion of the inner lead groups which adjoin among four inner lead groups corresponding to each side of the bar lead, and was connected with the bar lead, and a tape member joined to the tip part of each inner lead, a bar lead, and a corner part lead are included. Since the corner part lead is formed as an object for reinforcement of a frame body between adjoining inner lead groups, the rigidity of the lead frame can be increased.
摘要翻译：多个内部引线，多个外部引线，每个外部引线与内部引线中的每一个形成一个，方形环形状的引脚布置在多个内部引线内;角部引线，其设置在内部引线之间所述内引线组的与所述棒引线的每一侧相对应的四个内引线组中相邻的所述内引线组的端部与所述引线连接，以及与所述内引线的前端接合的带部件，并包括角落部分铅。由于角部引线形成为在相邻的内引线组之间加强框架体的对象，所以可以提高引线框架的刚性。

42. 发明授权

US07073147B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07073147B2
公开(公告)日：2006-07-04
申请号：US10694825
申请日：2003-10-29
申请人： Hiroyuki Ikeda , Toshio Sasaki , Akinobu Watanabe , Toshio Yamada , Akihisa Uchida
发明人： Hiroyuki Ikeda , Toshio Sasaki , Akinobu Watanabe , Toshio Yamada , Akihisa Uchida
IPC分类号： G06F17/50
CPC分类号： H01L27/11 , G11C5/14 , H01L27/0207
摘要： Wirings connected to a gate electrode of a slave switch circuit cell for substrate bias circuits are respectively electrically connected to a wiring for a power supply potential and a wiring for a reference potential. Thus, the switch operation of the slave switch circuit cell is made invalid. Wirings connected to n wells of respective circuit cells are electrically connected to a wiring for the power supply potential, and wirings connected to p wells of the respective circuit cells are electrically connected to the wiring. Thus, the n wells are fixed to the power supply potential, and the p wells are fixed to the reference potential.
摘要翻译：连接到用于衬底偏置电路的从属开关电路单元的栅电极的布线分别电连接到用于电源电位的布线和用于参考电位的布线。因此，从开关电路单元的开关动作无效。连接到各个电路单元的n个阱的布线电连接到用于电源电位的布线，并且连接到各个电路单元的p阱的布线电连接到布线。因此，n个阱被固定到电源电位，并且p阱被固定到参考电位。

43. 发明授权

US06967881B2 Semiconductor integrated circuit and method of manufacturing of semiconductor integrated circuit 有权
标题翻译：半导体集成电路及半导体集成电路制造方法
公开(公告)号：US06967881B2
公开(公告)日：2005-11-22
申请号：US10785101
申请日：2004-02-25
申请人： Toshio Sasaki , Toshio Yamada
发明人： Toshio Sasaki , Toshio Yamada
IPC分类号： H01L21/822 , G11C16/04 , G11C29/00 , G11C29/02 , G11C29/04 , H01L21/8247 , H01L27/04 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792 , H03K19/00 , G11C11/00
CPC分类号： G11C29/802 , G11C16/0441 , G11C29/02 , G11C29/021 , G11C29/028 , G11C29/12005 , G11C2029/1208 , G11C2029/4402 , H01L27/115 , H01L2223/5444
摘要： A semiconductor integrated circuit makes use of nonvolatile memory cells of a fuse circuit connected to a dedicated signal line without using a nonvolatile memory intended for general purpose use, which is connected to a common bus, in order to store control information for defect relief and the like of circuit modules. The reliability of storage of the control information is not limited to the performance of storage of information in the nonvolatile memory intended for general purpose use, and the reliability of storage of the control information can be easily enhanced. Since a second wiring used in the transfer of the control information is of a wiring dedicated for its transfer, it needs not perform switching between connections to circuit portions used for actual operations in the circuit modules and their control. A circuit configuration for delivering the control information can be simplified.
摘要翻译：半导体集成电路使用连接到专用信号线的熔丝电路的非易失性存储单元，而不使用连接到公共总线的旨在用于通用的非易失性存储器，以便存储用于缺陷消除的控制信息，并且像电路模块一样。控制信息的存储的可靠性不限于旨在用于通用目的的非易失性存储器中的信息的存储性能，并且可以容易地增强控制信息的存储的可靠性。由于用于传送控制信息的第二布线是专用于其传送的布线，所以不需要在用于电路模块中的实际操作的电路部分的连接和它们的控制之间进行切换。可以简化用于传送控制信息的电路配置。

44. 发明授权

US06762969B2 Semiconductor integrated circuit and method of manufacturing of semiconductor integrated circuit 失效
标题翻译：半导体集成电路及半导体集成电路制造方法
公开(公告)号：US06762969B2
公开(公告)日：2004-07-13
申请号：US10346097
申请日：2003-01-17
申请人： Toshio Sasaki , Toshio Yamada
发明人： Toshio Sasaki , Toshio Yamada
IPC分类号： G11C700
CPC分类号： G11C29/802 , G11C16/0441 , G11C29/02 , G11C29/021 , G11C29/028 , G11C29/12005 , G11C2029/1208 , G11C2029/4402 , H01L27/115 , H01L2223/5444
摘要： A semiconductor integrated circuit makes use of nonvolatile memory cells of a fuse circuit connected to a dedicated signal line without using a nonvolatile memory intended for general purpose use, which is connected to a common bus, in order to store control information for defect relief and the like of circuit modules. The reliability of storage of the control information is not limited to the performance of storage of information in the nonvolatile memory intended for general purpose use, and the reliability of storage of the control information can be easily enhanced. Since a second wiring used in the transfer of the control information is of a wiring dedicated for its transfer, it needs not perform switching between connections to circuit portions used for actual operations in the circuit modules and their control. A circuit configuration for delivering the control information can be simplified.
摘要翻译：半导体集成电路使用连接到专用信号线的熔丝电路的非易失性存储单元，而不使用连接到公共总线的旨在用于通用的非易失性存储器，以便存储用于缺陷消除的控制信息，并且像电路模块一样。控制信息的存储的可靠性不限于旨在用于通用目的的非易失性存储器中的信息的存储性能，并且可以容易地增强控制信息的存储的可靠性。由于用于传送控制信息的第二布线是专用于其传送的布线，所以不需要在用于电路模块中的实际操作的电路部分的连接和它们的控制之间进行切换。可以简化用于传送控制信息的电路配置。

45. 发明授权

US06738310B2 Nonvolatile semiconductor memory 失效
公开(公告)号：US06738310B2
公开(公告)日：2004-05-18
申请号：US10351524
申请日：2003-01-27
申请人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
发明人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
IPC分类号： G11C700
CPC分类号： G11C16/0416 , G11C8/08 , G11C16/10 , G11C16/12 , G11C16/16 , G11C16/34 , G11C16/3418 , G11C16/3427 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/7883 , H01L29/7885
摘要： Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte.

46. 发明授权

US06272042B1 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US06272042B1
公开(公告)日：2001-08-07
申请号：US09630426
申请日：2000-08-01
申请人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
发明人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
IPC分类号： G11C1604
CPC分类号： G11C16/0416 , G11C8/08 , G11C16/10 , G11C16/12 , G11C16/16 , G11C16/34 , G11C16/3418 , G11C16/3427 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/7883 , H01L29/7885
摘要： Each memory cell of a nonvolatile semiconductor memory, essentially, consists of a one-transistor type memory cell such as a MOSFET having a floating gate electrode. When an electric programming operation is carried out, a positive voltage is applied to an n type drain region, a negative voltage is applied to a control gate and a source region is grounded. When an erasing operation is carried out, the positive voltage is applied to the control gate while all the other electrodes and a semiconductor substrate are grounded. Low power consumption can be accomplished because both of the programming operation and erasing operations are carried out by utilizing a tunneling mechanism. Furthermore, because the negative voltage applied to the word line, a drain voltage at the time of programming of data can be lowered, so that degradation of a gate oxide film at a channel portion can be mitigated.
摘要翻译：非易失性半导体存储器的每个存储单元基本上由诸如具有浮置栅电极的MOSFET的单晶体管型存储单元组成。当执行电编程操作时，向n型漏极区域施加正电压，向控制栅极施加负电压，并且源极区域接地。当执行擦除操作时，正电压被施加到控制栅极，而所有其它电极和半导体衬底接地。可以实现低功耗，因为通过利用隧道机制来执行编程操作和擦除操作两者。此外，由于施加到字线的负电压，可以降低数据编程时的漏极电压，从而可以减轻沟道部分处的栅极氧化膜的劣化。

47. 发明授权

US5275133A Apparatus for cooling internal combustion engine having a supercharger 失效
标题翻译：具有增压器的内燃机冷却装置
公开(公告)号：US5275133A
公开(公告)日：1994-01-04
申请号：US469474
申请日：1990-05-29
申请人： Toshio Sasaki , Yasukuni Kawashima
发明人： Toshio Sasaki , Yasukuni Kawashima
IPC分类号： F01P3/20 , F01P11/04 , F02B39/00 , F01P1/06
CPC分类号： F01P3/20 , F02B39/005 , F01P2060/12
摘要： The present invention provides an apparatus for cooling an internal combustion engine having a supercharger attached thereto, wherein the apparatus includes communication passages and by way of which the upper end of a coolant flow passage for circulating coolant through the internal combustion engine and a coolant flow passage for circulating coolant through the supercharger communicates with an upper tank installed on a radiator so that cooling of the supercharge and separating of air from coolant can simultaneously be accomplished by arranged of the communication passages.
摘要翻译： PCT No.PCT / JP89 / 00737 371日期1990年5月29日第 102（e）日期1990年5月29日PCT提交1989年7月24日PCT公布。第WO90 / 01621号公报日本1990年2月22日。本发明提供了一种用于冷却具有附着于其上的增压器的内燃机的装置，其中该装置包括连通通道，通过该连通通道，冷却剂流动通道的上端用于使冷却剂循环通过内部燃烧发动机和用于使冷却剂循环通过增压器的冷却剂流动通道与安装在散热器上的上部箱体连通，从而可以通过布置连通通道同时实现空气与冷却剂的增压和分离的冷却。

48. 发明授权

US5215951A Process for producing .alpha.-olefin polymer 失效
标题翻译：生产α-烯烃聚合物的方法
公开(公告)号：US5215951A
公开(公告)日：1993-06-01
申请号：US729791
申请日：1991-07-10
申请人： Toshio Sasaki , Hirofumi Jyohouji , Takeshi Ebara , Kiyoshi Kawai
发明人： Toshio Sasaki , Hirofumi Jyohouji , Takeshi Ebara , Kiyoshi Kawai
IPC分类号： C08F4/651 , C08F10/00
CPC分类号： C08F10/00
摘要： A process for producing an .alpha.-olefin polymer which comprises polymerizing an .alpha.-olefin in the presence of a catalyst system comprising(A) a solid catalyst component containing at least titanium, magnesium, halogen, and electron donor and(B) a sterically hindered aluminum amide compound represented by the general formula ##STR1## wherein, R.sup.1 through R.sup.5 denote each a hydrocarbon group of 1 to 20 carbon atoms, L denotes an alkoxy group of 1 to 20 carbon atoms and/or halogen, l is 2 or 3, x is defined by 0
摘要翻译：一种制备α-烯烃聚合物的方法，其包括在催化剂体系存在下聚合α-烯烃，所述催化剂体系包含（A）至少含有钛，镁，卤素和电子给体的固体催化剂组分和（B）空间位阻由通式表示的铝酰胺化合物，其中，R 1至R 5表示各自为1-20个碳原子的烃基，L表示1至20个碳原子的烷氧基和/或卤素，l为2或3， x由0

49. 发明授权

US5166280A Olefin polymerization catalyst and process for producing ethylene copolymers 失效
标题翻译：烯烃聚合催化剂和生产乙烯共聚物的方法
公开(公告)号：US5166280A
公开(公告)日：1992-11-24
申请号：US755762
申请日：1991-09-06
申请人： Yoshihiro Miyoshi , Hiroyuki Shiraishi , Takeshi Ebara , Toshio Sasaki , Kiyoshi Kawai
发明人： Yoshihiro Miyoshi , Hiroyuki Shiraishi , Takeshi Ebara , Toshio Sasaki , Kiyoshi Kawai
IPC分类号： C08F210/02 , C08F4/60 , C08F4/646 , C08F4/656 , C08F4/658 , C08F10/00 , C08F210/00 , C08F210/16
CPC分类号： C08F10/00
摘要： An olefin polymerization catalyst comprising:(A) a solid catalyst component containing a trivalent titanium, which is represented by the composition formulaMg.sub.m Ti(OR).sub.n X.sub.p [ED].sub.q (wherein R is a hydrocarbon group having 1 to 20 carbon atoms, X is a halogen, ED is a electron donative compound, and m, n, p and q are each a number satisfying 1.ltoreq.m.ltoreq.51, 0
摘要翻译：一种烯烃聚合催化剂，其包含：（A）含有三价钛的固体催化剂组分，其由组成式MgmTi（OR）nXp [ED] q（其中R是具有1至20个碳原子的烃基，X为卤素，ED是给电子化合物，m，n，p和q各自是满足1≤M≤51的数，0

50. 发明授权

US5143880A Solid catalyst component for use in polymerization of .alpha.-olefins 失效
标题翻译：用于（ALPHA） - 烯烃聚合的固体催化剂组分
公开(公告)号：US5143880A
公开(公告)日：1992-09-01
申请号：US667747
申请日：1991-03-11
申请人： Toshio Sasaki , Takeshi Ebara , Kiyoshi Kawai
发明人： Toshio Sasaki , Takeshi Ebara , Kiyoshi Kawai
IPC分类号： C08F4/60 , C08F4/656 , C08F4/658 , C08F10/00
CPC分类号： C08F10/00
摘要： A solid-catalyst component for use in the polymerization of .alpha.-olefins obtained byreducing a titanium compound represented by the following general formula:Ti(OR.sup.1).sub.n x.sub.4-n wherein R.sup.1 represents a hydrocarbon group having 1 to 20 carbon atoms, X represents a halogen atom and n represents a number satisyfing 0

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