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41. 发明授权

US08692222B2 Nonvolatile memory element and method of manufacturing the nonvolatile memory element 有权
标题翻译：非易失性存储元件和制造非易失性存储元件的方法
公开(公告)号：US08692222B2
公开(公告)日：2014-04-08
申请号：US13575338
申请日：2011-12-12
申请人： Shinichi Yoneda , Takumi Mikawa
发明人： Shinichi Yoneda , Takumi Mikawa
IPC分类号： H01L47/00
CPC分类号： H01L45/146 , G11C13/0007 , G11C2213/72 , H01L45/1233
摘要： A nonvolatile memory element according to the present disclosure includes: a variable resistance element including a first electrode layer, a second electrode layer, and a variable resistance layer which is located between the first electrode layer and the second electrode layer and has a resistance value that reversibly changes based on an electrical signal applied between the first electrode layer and the second electrode layer; and a fixed resistance layer having a predetermined resistance value and stacked together with the variable resistance element. The variable resistance layer includes (i) a first transition metal oxide layer which is oxygen deficient and (ii) a second transition metal oxide layer which has a higher oxygen content atomic percentage than the first transition metal oxide layer. The predetermined resistance value ranges from 70Ω to 1000Ω inclusive.
摘要翻译：根据本公开的非易失性存储元件包括：可变电阻元件，包括位于第一电极层和第二电极层之间的第一电极层，第二电极层和可变电阻层，并且具有电阻值，基于施加在第一电极层和第二电极层之间的电信号可逆地改变; 以及具有预定电阻值并与可变电阻元件一起堆叠的固定电阻层。可变电阻层包括（i）缺氧的第一过渡金属氧化物层和（ii）具有比第一过渡金属氧化物层更高的氧含量原子百分比的第二过渡金属氧化物层。预定电阻值范围为70＆OHgr; 至1000＆OHgr; 包括的。

42. 发明申请

US20140024197A1 NONVOLATILE STORAGE ELEMENT AND METHOD OF MANUFACTURING THEREOF 有权
标题翻译：非易失存储元件及其制造方法
公开(公告)号：US20140024197A1
公开(公告)日：2014-01-23
申请号：US14110163
申请日：2012-04-11
申请人： Yoshio Kawashima , Takumi Mikawa , Shinichi Imai
发明人： Yoshio Kawashima , Takumi Mikawa , Shinichi Imai
IPC分类号： H01L45/00
CPC分类号： H01L45/1675 , H01L27/2436 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： A method of manufacturing a variable resistance nonvolatile memory element includes: forming a lower electrode layer above a substrate; forming, on the lower electrode layer, a variable resistance layer including an oxygen-deficient transition metal oxide; forming an upper electrode layer on the variable resistance layer; and forming a patterned mask on the upper electrode layer and etching the upper electrode layer, the variable resistance layer, and the lower electrode layer using the patterned mask, wherein in the etching, at least the variable resistance layer is etched using an etching gas containing bromine.
摘要翻译：一种制造可变电阻非易失性存储元件的方法包括：在衬底上形成下电极层; 在下电极层上形成包含缺氧过渡金属氧化物的可变电阻层; 在所述可变电阻层上形成上电极层; 以及在所述上电极层上形成图案化掩模，并使用所述图案掩模蚀刻所述上电极层，所述可变电阻层和所述下电极层，其中在所述蚀刻中，至少所述可变电阻层使用含有溴。

43. 发明授权

US08559205B2 Nonvolatile semiconductor memory apparatus and manufacturing method thereof 有权
标题翻译：非易失性半导体存储装置及其制造方法
公开(公告)号：US08559205B2
公开(公告)日：2013-10-15
申请号：US13563321
申请日：2012-07-31
申请人： Takumi Mikawa , Takeshi Takagi
发明人： Takumi Mikawa , Takeshi Takagi
IPC分类号： G11C17/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/32 , G11C2213/72 , G11C2213/73 , H01L27/0688 , H01L27/112 , H01L27/115 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1683
摘要： A nonvolatile semiconductor memory apparatus including a substrate, lower-layer electrode wires provided on the substrate, an interlayer insulating layer provided with contact holes at locations respectively opposite to the lower-layer electrode wires, resistance variable layers which are respectively connected to the lower-layer electrode wires; and non-ohmic devices which are respectively provided on the resistance variable layers. The non-ohmic devices each has a laminated-layer structure including plural semiconductor layers, a laminated-layer structure including a metal electrode layer and an insulator layer, or a laminated-layer structure including a metal electrode layer and a semiconductor layer. One layer of the laminated-layer structure is embedded to fill each of the contact holes and the semiconductor layer or the insulator layer which is the other layer of the laminated-layer structure has a larger area than an opening of each of the contact holes and is provided on the interlayer insulating layer.
摘要翻译：一种非易失性半导体存储装置，包括基板，设置在基板上的下层电极布线，在与下层电极布线分别相对的位置设置有接触孔的层间绝缘层，分别与下层电极布线连接的电阻变化层，层电极线; 以及分别设置在电阻变化层上的非欧姆器件。非欧姆性器件各自具有包括多个半导体层的层压层结构，包括金属电极层和绝缘体层的层叠层结构，或者包括金属电极层和半导体层的层叠结构。嵌入层叠层结构的一层以填充每个接触孔，作为层叠层结构的另一层的半导体层或绝缘体层的面积比每个接触孔的开口大，设置在层间绝缘层上。

44. 发明申请

US20130224931A1 NONVOLATILE MEMORY DEVICE MANUFACTURING METHOD 有权
标题翻译：非易失性存储器件制造方法
公开(公告)号：US20130224931A1
公开(公告)日：2013-08-29
申请号：US13884630
申请日：2012-03-21
申请人： Haruyuki Sorada , Takumi Mikawa , Kenji Tominaga , Kiyotaka Tsuji
发明人： Haruyuki Sorada , Takumi Mikawa , Kenji Tominaga , Kiyotaka Tsuji
IPC分类号： H01L45/00
CPC分类号： H01L45/16 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2463 , H01L45/04 , H01L45/1683
摘要： A method of manufacturing a nonvolatile memory device that is a variable resistance nonvolatile memory device, which has good consistency with a dual damascene process that is suitable for the formation of fine copper lines and which enables large capacity and high integration. This method includes: forming a variable resistance element, a contact hole and a line groove; and forming a current steering layer of a bidirectional diode element above interlayer insulating layers and a variable resistance layer to cover the line groove without covering a bottom surface of the contact hole.
摘要翻译：一种制造非易失性存储器件的方法，其是可变电阻非易失性存储器件，其与适合于形成细铜线的双镶嵌工艺具有良好的一致性，并且能够实现大容量和高集成度。该方法包括：形成可变电阻元件，接触孔和线槽; 并且在层间绝缘层之上形成双向二极管元件的电流转向层和可变电阻层以覆盖线槽而不覆盖接触孔的底表面。

45. 发明授权

US08482958B2 Current steering element, memory element, memory, and method of manufacturing current steering element 有权
标题翻译：当前的导向元件，存储元件，存储器以及制造电流转向元件的方法
公开(公告)号：US08482958B2
公开(公告)日：2013-07-09
申请号：US13321018
申请日：2011-03-10
申请人： Yukio Hayakawa , Koji Arita , Takumi Mikawa , Takeki Ninomiya
发明人： Yukio Hayakawa , Koji Arita , Takumi Mikawa , Takeki Ninomiya
IPC分类号： G11C11/00
CPC分类号： H01L27/2409 , H01L45/146
摘要： Provided is a current steering element that can prevent write didturb even when an electrical pulse with different polarities is applied and that can cause a large current to flow through a variable resistance element. The current steering element includes a first electrode (32), a second electrode (31), and a current steering layer (33). The current steering layer (33) comprises SiNx (where 0
摘要翻译：提供了即使当施加具有不同极性的电脉冲并且可能导致大电流流过可变电阻元件时也能够防止写入干扰的电流导向元件。当前的转向元件包括第一电极（32），第二电极（31）和电流转向层（33）。当前的转向层（33）包括加入氢或氟的SiNx（其中0 <0.85）。当D（D = D0×1022原子/ cm3）表示氢或氟的密度时，d（nm）表示电流导向层（33）的厚度，V0（V）表示适用于第一电极（32）和第二电极（31）D，x，d和V0满足下式。（ln（1000（C·exp（α·d）exp（β·x））-1）γ）2 @ V0 ）γ）2-（ln（10000（C·exp（α·d）exp（β·x））-1）γ）2/2> = 0其中C = k1×D0k2，α，β， k1和k2是常数。

46. 发明申请

US20130092893A1 NONVOLATILE MEMORY ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：非易失性存储元件及其制造方法
公开(公告)号：US20130092893A1
公开(公告)日：2013-04-18
申请号：US13704663
申请日：2011-06-30
申请人： Yoshio Kawashima , Takumi Mikawa
发明人： Yoshio Kawashima , Takumi Mikawa
IPC分类号： H01L45/00
CPC分类号： H01L45/1666 , H01L27/2436 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/146 , H01L45/1675
摘要： The method includes: forming a lower electrode layer above a substrate; forming a variable resistance layer on the lower electrode layer; forming an upper electrode layer on the variable resistance layer; forming a hard mask layer on the upper electrode layer; forming a photoresist mask on the hard mask layer; forming a hard mask by performing etching on the hard mask layer using the photoresist mask; and forming a nonvolatile memory element by performing etching on the upper electrode layer, the variable resistance layer, and the lower electrode layer, using the hard mask. In the forming of a photoresist mask, the photoresist mask is formed to have corner portions which recede toward the center portion in planar view.
摘要翻译：该方法包括：在基板上形成下电极层; 在下电极层上形成可变电阻层; 在所述可变电阻层上形成上电极层; 在上电极层上形成硬掩模层; 在硬掩模层上形成光刻胶掩模; 通过使用光致抗蚀剂掩模在硬掩模层上进行蚀刻来形成硬掩模; 以及通过使用硬掩模对上电极层，可变电阻层和下电极层进行蚀刻来形成非易失性存储元件。在光致抗蚀剂掩模的形成中，光致抗蚀剂掩模形成为具有在平面视图中朝向中心部分后退的角部。

47. 发明授权

US08355274B2 Current steering element, storage element, storage device, and method for manufacturing current steering element 有权
标题翻译：目前的导向元件，存储元件，存储装置以及用于制造当前转向元件的方法
公开(公告)号：US08355274B2
公开(公告)日：2013-01-15
申请号：US13061312
申请日：2009-09-17
申请人： Koji Arita , Takumi Mikawa , Mitsuteru IIjima , Kenji Tominaga
发明人： Koji Arita , Takumi Mikawa , Mitsuteru IIjima , Kenji Tominaga
IPC分类号： G11C11/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2013/0078 , G11C2213/15 , G11C2213/51 , G11C2213/56 , G11C2213/76 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A current steering element which can prevent occurrence of write disturb even when electric pulses having different polarities are applied and can cause large current to flow through a variable resistance element, and with which data can be written without problem. In a storage element (3) including: a variable resistance element (1) whose electric resistance value changes in response to application of electric pulses having a positive polarity and a negative polarity and which maintains the changed electric resistance value; and the current steering element (2) that steers current flowing through the variable resistance element (1) when the electric pulses are applied, the current steering element (2) includes: a first electrode (32); a second electrode (31); and a current steering layer (33) interposed between the first electrode (32) and the second electrode (31). When the current steering layer (33) includes SiNx (0
摘要翻译：即使施加具有不同极性的电脉冲也能够防止写入干扰的发生，并且可能导致大的电流流过可变电阻元件并且可以无限制地写入数据的电流导向元件。在一种存储元件（3）中，包括：可变电阻元件（1），其电阻值响应于具有正极性和负极性的电脉冲的应用而变化并且保持改变的电阻值; 以及当施加电脉冲时转向流过可变电阻元件（1）的电流的当前操舵元件（2），所述电流操舵元件（2）包括：第一电极（32）; 第二电极（31）; 和介于所述第一电极（32）和所述第二电极（31）之间的电流转向层（33）。当电流导向层（33）包括SiNx（0

48. 发明申请

US20130010529A1 NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, NONVOLATILE MEMORY DEVICE, AND DESIGN SUPPORT METHOD FOR NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储器元件，其制造方法，非易失性存储器件以及非易失性存储元件的设计支持方法
公开(公告)号：US20130010529A1
公开(公告)日：2013-01-10
申请号：US13634700
申请日：2011-11-24
申请人： Yukio Hayakawa , Takumi Mikawa , Takeki Ninomiya
发明人： Yukio Hayakawa , Takumi Mikawa , Takeki Ninomiya
IPC分类号： H01L45/00 , G11C11/00 , G06F17/50
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/55 , H01L27/02 , H01L27/2427 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A nonvolatile memory element includes a variable resistance layer located between a lower electrode and an upper electrode and having a resistance value that reversibly changes based on electrical signals applied between these electrodes. The variable resistance layer includes at least two layers: a first variable resistance layer including a first transition metal oxide; and a second variable resistance layer including a second transition metal oxide and a transition metal compound. The second transition metal oxide has an oxygen content atomic percentage lower than an oxygen content atomic percentage of the first transition metal oxide, the transition metal compound contains either oxygen and nitrogen or oxygen and fluorine, and the second transition metal oxide and the transition metal compound are in contact with the first variable resistance layer.
摘要翻译：非易失性存储元件包括位于下电极和上电极之间的可变电阻层，并且具有基于施加在这些电极之间的电信号而可逆地改变的电阻值。可变电阻层包括至少两层：包含第一过渡金属氧化物的第一可变电阻层; 以及包含第二过渡金属氧化物和过渡金属化合物的第二可变电阻层。第二过渡金属氧化物的氧含量原子百分比低于第一过渡金属氧化物的氧含量原子百分比，过渡金属化合物含有氧和氮或氧和氟，第二过渡金属氧化物和过渡金属化合物与第一可变电阻层接触。

49. 发明申请

US20130001504A1 NONVOLATILE MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非易失性存储元件及其制造方法
公开(公告)号：US20130001504A1
公开(公告)日：2013-01-03
申请号：US13501624
申请日：2011-11-18
申请人： Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
发明人： Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1675
摘要： Provided is a nonvolatile memory element which inhibits deterioration of a oxygen concentration profile of a variable resistance layer due to a thermal budget and is able to stably operate at low voltages, and a method for manufacturing the nonvolatile memory element. A nonvolatile memory element (12) includes a first electrode layer (105) formed above a substrate (100), a variable resistance layer (106) disposed on the first electrode layer (105), and a second electrode layer (107) disposed on the variable resistance layer (106), and the variable resistance layer (106) has a two-layer structure in which a oxygen- and/or nitrogen-deficient tantalum oxynitride layer (106a) and a tantalum oxide layer (106b) are stacked.
摘要翻译：提供一种非易失性存储元件，其抑制由于热量预算而导致的可变电阻层的氧浓度分布的劣化，并能够稳定地在低电压下工作，以及非易失性存储元件的制造方法。非易失性存储元件（12）包括形成在基板（100）上方的第一电极层（105），设置在第一电极层（105）上的可变电阻层（106）和设置在第一电极层可变电阻层（106）和可变电阻层（106）具有堆叠氧和/或氮缺乏的氮氧化钽层（106a）和氧化钽层（106b）的双层结构。

50. 发明申请

US20120292588A1 NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件
公开(公告)号：US20120292588A1
公开(公告)日：2012-11-22
申请号：US13503770
申请日：2011-12-15
申请人： Satoru Fujii , Haruyuki Sorada , Takumi Mikawa
发明人： Satoru Fujii , Haruyuki Sorada , Takumi Mikawa
IPC分类号： H01L47/00
CPC分类号： H01L45/145 , H01L27/2418 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/1683
摘要： A nonvolatile memory device including: a strip-shaped first electrode line (151); a third interlayer insulating layer (16); a variable resistance layer having a stacked structure including a first variable resistance layer (18a) comprising an oxygen-deficient transition metal oxide and formed in a memory cell hole (29) to cover a bottom and a side face, and a second variable resistance layer (18b) comprising an oxygen- and/or nitrogen-deficient transition metal oxynitride having a different oxygen content than the first variable resistance layer; a first electrode (19) formed in the memory cell hole; and a strip-shaped first line (22) formed in a direction crossing the first electrode line (151) to cover at least an opening of the memory cell hole, and z>(x+y) is satisfied when the transition metal is represented by M and compositions of the first and the second variable resistance layers by MOz and MOxNy, respectively.
摘要翻译：一种非易失性存储器件，包括：带状第一电极线（151）; 第三层间绝缘层（16）; 具有堆叠结构的可变电阻层，包括由缺氧过渡金属氧化物构成的第一可变电阻层（18a），形成在存储单元孔（29）中以覆盖底部和侧面;以及第二可变电阻层（18b），其包含氧含量低于所述第一可变电阻层的氧和/或氮缺乏的过渡金属氮氧化物; 形成在所述存储单元孔中的第一电极（19）以及沿着与第一电极线（151）交叉的方向形成的带状第一线（22），以覆盖存储单元孔的至少一个开口，并且当表示过渡金属时，满足z>（x + y）分别由M和第一和第二可变电阻层的组成分别由MOz和MOxNy组成。

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