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41. 发明授权

US4381074A Air-conditioning method and system for an automotive vehicle 失效
标题翻译：汽车空调方法和系统
公开(公告)号：US4381074A
公开(公告)日：1983-04-26
申请号：US317865
申请日：1981-11-03
申请人： Tetsuya Iijima , Seiichi Takahashi
发明人： Tetsuya Iijima , Seiichi Takahashi
IPC分类号： B60H1/00 , F24F11/02 , G05D23/00 , B60H3/00
CPC分类号： B60H1/00835
摘要： An air-conditioning method and system for an automotive vehicle according to the present invention automatically maintains the temperature of air within the passenger compartment at a value preset by a passenger compartment air temperature presetting device and adjusted to a comfortable temperature which varies according to the outside-air temperature in accordance with a predetermined relationship defined by three linear functions having two points of intersection. The method comprises the steps of calculating a basic outlet duct air temperature, calculating an outlet duct air temperature correction, adding the two calculated values, and calculating an air mix door opening percentage, in addition to calculating a comfortable passenger compartment air temperature.
摘要翻译：根据本发明的用于机动车辆的空调方法和系统将乘客舱内的空气温度自动保持在由乘客室空气温度预设装置预设的值，并被调节到根据外部变化的舒适温度根据由具有两个交点的三个线性函数定义的预定关系来确定气温。该方法包括计算基本出口管道空气温度，计算出口管道空气温度校正，加上两个计算值，以及计算空气混合门开启百分比，以及计算舒适的乘员室空气温度。

42. 发明申请

US20100184297A1 METHOD FOR PROTECTING SEMICONDUCTOR WAFER AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于保护半导体晶体管的方法和用于生产半导体器件的方法
公开(公告)号：US20100184297A1
公开(公告)日：2010-07-22
申请号：US12665529
申请日：2008-06-20
申请人： Mikio Takagi , Seiichi Takahashi
发明人： Mikio Takagi , Seiichi Takahashi
IPC分类号： H01L21/306
CPC分类号： H01L21/02063 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： [Task] In a proposed protection method, re-oxidation of a semiconductor wafer is prevented. The method is appropriate for fine patterned semiconductor device. A wafer is dry etched and is subjected to a next step of forming an electrode material film. The dry-etched wafer is maintained not re-oxidized until the next step. The dry etching reaction products are appropriately removed.[Means for Solution] A wafer, on which the dry etching reaction products remain, is protected by the reaction products. The wafer is held in an inert gas protective atmosphere having a pressure of 50 Pa or more and an atmospheric pressure or less, or is held in air equivalent to the air of a clean room or in a gas-mixture atmosphere of said air and an inert gas. The reaction products are decomposed and removed by heating immediately before the formation of an electrode-material film.
摘要翻译： [任务]在所提出的保护方法中，防止了半导体晶片的再氧化。该方法适用于精细图案化半导体器件。将晶片干蚀刻，并进行形成电极材料膜的下一步骤。干蚀刻的晶片保持不再氧化直到下一步骤。适当地除去干蚀刻反应产物。 [解决方案]残留有干蚀刻反应产物的晶片被反应产物保护。将晶片保持在压力为50Pa以上且大气压以下的惰性气体保护气氛中，或者保持在与洁净室的空气或空气的气体混合气氛相当的空气中，惰性气体。反应产物在形成电极材料膜之前立即加热分解和除去。

43. 发明申请

US20090117747A1 Method for Surface Treating Semiconductor 有权
标题翻译：表面处理半导体的方法
公开(公告)号：US20090117747A1
公开(公告)日：2009-05-07
申请号：US11990440
申请日：2006-08-15
申请人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
发明人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01L21/02046 , H01L21/306 , H01L21/67017 , H01L21/67757
摘要： [Task] Native oxide film on a semiconductor silicon wafer(s) is dry etched at a temperature of 50° C. or less. Hydrogen treatment is then carried out a temperature of 100° C. or more to bond the dangling bonds with hydrogen. A jig 9 that has been used is again used for loading new semiconductor silicon wafer(s) 10. The wafer(s) on the jig 9 is subjected to removal of a native oxide film and then hydrogen bonding. The resultant heat remains in jig and makes it difficult to maintain the wafers to temperature appropriate to removal of a native oxide film.[Means for Solution] After treatment of hydrogen bonding, inert gas having temperature of from 0 to −30° C. is injected into reaction vessel 5 and/or treatment preparing vessel 21, in which a native oxide film has been removed.
摘要翻译： [任务]半导体硅晶片上的天然氧化物膜在50℃以下的温度下进行干法蚀刻。然后进行氢气处理，其温度为100℃以上，以使悬挂键与氢键合。已经使用的夹具9再次用于装载新的半导体硅晶片10.将夹具9上的晶片除去自然氧化膜，然后氢键合。所得到的热量保留在夹具中，并且使得难以将晶片保持适于去除天然氧化物膜的温度。 [解决方案]在氢键合处理之后，将温度为0〜-30℃的惰性气体注入已除去自然氧化膜的反应容器5和/或处理制备容器21中。

44. 发明授权

US07497963B2 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US07497963B2
公开(公告)日：2009-03-03
申请号：US11032393
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： B44C1/22
CPC分类号： H01L21/67063 , H01L21/31116
摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.
摘要翻译：在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。结果，在基板的表面上不会发生不均匀的蚀刻。此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

45. 发明申请

US20060287404A1 Pharmaceutical raw material 有权
标题翻译：制药原料
公开(公告)号：US20060287404A1
公开(公告)日：2006-12-21
申请号：US11451597
申请日：2006-06-13
申请人： Nanao Horiishi , Toshiyuki Hakata , Hirofumi Kawasaki , Shinji Uemoto , Hiromitsu Misawa , Seiichi Takahashi
发明人： Nanao Horiishi , Toshiyuki Hakata , Hirofumi Kawasaki , Shinji Uemoto , Hiromitsu Misawa , Seiichi Takahashi
IPC分类号： B01F3/12 , H01F1/00 , B32B5/16 , C09K3/00
CPC分类号： H01F1/344 , A61K49/1809 , B82Y5/00 , H01F1/0054 , Y10T428/29 , Y10T428/2927 , Y10T428/2982
摘要： There are provided a pharmaceutical raw material capable of exhibiting a uniform functionality and producing magnetic particle-containing drugs for diagnosis and medical treatments with a high reproducibility. The pharmaceutical raw material comprises a monodisperse colloid sterile aqueous solution of magnetic iron oxide fine particles having an average particle diameter of 5 to 30 nm, a saturation magnetization of 50 to 90 Am2/kg and a coercive force of 0.1 to 1.6 kA/m. The pharmaceutical raw material can be produced by forming magnetic iron oxide fine particles in the form of a colloid aqueous solution, purifying the resultant colloid aqueous solution of superparamagnetic iron oxide particles by water-washing and removing water-soluble salts by-produced upon the reaction from the reaction solution by an ordinary method, and replacing a dispersing medium of the purified colloid aqueous solution with ultrapure water.
摘要翻译：提供能够显示均匀功能性并且以高再现性产生用于诊断和医疗的磁性颗粒药物的药用原料。药物原料包含平均粒径为5〜30nm，饱和磁化强度为50〜90Am 2 / kg的磁性氧化铁微粒的单分散胶体无菌水溶液，矫顽力为0.1〜1.6kA / m。药物原料可以通过形成胶体水溶液形式的磁性氧化铁细颗粒来制造，通过水洗净化所得到的超顺磁性氧化铁颗粒的胶体水溶液，并除去反应后副产的水溶性盐通过常规方法从反应溶液中，用超纯水代替纯化的胶体水溶液的分散介质。

46. 发明申请

US20050153553A1 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US20050153553A1
公开(公告)日：2005-07-14
申请号：US11032393
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/302 , H01L21/311 , H01L21/461 , H01L21/768 , H01L23/522
CPC分类号： H01L21/67063 , H01L21/31116
摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.
摘要翻译：在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。结果，在基板的表面上不会发生不均匀的蚀刻。此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

47. 发明授权

US06537865B2 Semiconductor device and process of fabricating same 失效
标题翻译：半导体器件及其制造工艺
公开(公告)号：US06537865B2
公开(公告)日：2003-03-25
申请号：US09930136
申请日：2001-08-16
申请人： Kazuyuki Inokuchi , Seiichi Takahashi , Shinichi Hoshi , Tadashi Saito , Nobusuke Yamamoto , Yuko Itoh , Nobumasa Higemoto
发明人： Kazuyuki Inokuchi , Seiichi Takahashi , Shinichi Hoshi , Tadashi Saito , Nobusuke Yamamoto , Yuko Itoh , Nobumasa Higemoto
IPC分类号： H01L21338
CPC分类号： H01L29/66462 , H01L29/42316 , H01L29/7785
摘要： A semiconductor device fabrication process includes forming a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure having a lower portion that penetrates through the cap layer and reaches the Schottky layer, and having an upper portion larger than the lower portion in cross-sectional area and that overlies the cap layer. With this construction, surface defects are unlikely to occur, so that a highly reliable semiconductor device can be fabricated.
摘要翻译：半导体器件制造工艺包括形成肖特基层，覆盖肖特基层表面的覆盖层和具有穿透盖层并到达肖特基层的下部的二级结构的肖特基电极，并且具有在上部比横截面积的下部大的部分，覆盖在盖层上。利用这种结构，不可能发生表面缺陷，从而可以制造高可靠性的半导体器件。

48. 发明授权

US06384440B1 Ferroelectric memory including ferroelectric capacitor, one of whose electrodes is connected to metal silicide film 有权
标题翻译：铁电存储器包括铁电电容器，其电极之一连接到金属硅化物膜
公开(公告)号：US06384440B1
公开(公告)日：2002-05-07
申请号：US09703730
申请日：2000-11-02
申请人： Hidemitsu Mori , Seiichi Takahashi
发明人： Hidemitsu Mori , Seiichi Takahashi
IPC分类号： H01L2702
CPC分类号： H01L27/11502 , H01L21/28518 , H01L21/76895 , H01L27/11507 , H01L28/60
摘要： A ferroelectric memory is composed of a wiring layer, a bottom electrode coupled to the wiring layer, a ferroelectric film formed on the bottom electrode, a top electrode formed on the ferroelectric film, and a metal silicide layer coupled to the top electrode and located above the ferroelectric film. The wiring layer includes substantially no silicon.
摘要翻译：铁电存储器由布线层，与布线层连接的底部电极，形成在底部电极上的强电介质膜，形成在铁电体膜上的顶部电极和与顶部电极耦合并位于其上的金属硅化物层组成铁电薄膜。布线层基本上不含硅。

49. 发明授权

US06199646B1 Working vehicle with semicrawlers 失效
标题翻译：工作车辆与半拖车
公开(公告)号：US06199646B1
公开(公告)日：2001-03-13
申请号：US08902806
申请日：1997-07-30
申请人： Yoshifumi Tani , Ryoji Kuriki , Katsushi Fukawatase , Masayuki Sato , Seiichi Takahashi , Kenichiro Tsuji
发明人： Yoshifumi Tani , Ryoji Kuriki , Katsushi Fukawatase , Masayuki Sato , Seiichi Takahashi , Kenichiro Tsuji
IPC分类号： B62D5500
CPC分类号： B62D55/104 , B62D55/04 , B62D55/084
摘要： A tractor includes a body frame (4), front wheels (3), propelling shafts (8) disposed in a rear portion of the body frame, and semicrawler units (10) for receiving drive from the propelling drive shafts. Each semicrawler unit includes a drive rolling element (11) attachable to one of the propelling drive shafts, an endless crawler track (15) driven by the drive rolling element and contacting the ground, driven rolling elements (13, 14) engaged by the endless crawler track, and a track frame (12) for supporting the driven rolling elements. The track frame is supported by the body frame to be vertically oscillatable through a pivot shaft (16). Rear wheels (9) may be attached in place of the semicrawler units to the propelling drive shafts.
摘要翻译：拖拉机包括主体框架（4），前轮（3），设置在车体框架的后部中的推进轴（8）和用于从推进驱动轴接收驱动的半履带单元（10）。每个半履带单元包括一个驱动滚动元件（11），该驱动滚动元件可连接到推进驱动轴中的一个，由驱动滚动元件驱动并与地面接触的环形履带（15），与环形啮合的从动滚动元件（13,14）履带轨道和用于支撑从动滚动元件的履带架（12）。轨道框架由主体框架支撑，以通过枢轴（16）垂直摆动。后轮（9）可以代替半履带单元而附接到推进驱动轴。

50. 发明授权

US5944064A Tying method and tying apparatus for articles 失效
标题翻译：捆扎方法和捆扎装置
公开(公告)号：US5944064A
公开(公告)日：1999-08-31
申请号：US894148
申请日：1997-08-13
申请人： Tsutomu Saito , Seiichi Takahashi , Hirokazu Watanabe
发明人： Tsutomu Saito , Seiichi Takahashi , Hirokazu Watanabe
IPC分类号： B65B13/28 , E04G21/12 , B21F15/04
CPC分类号： B65B13/285 , E04G21/122
摘要： An engaging portion in engagement with a tying material and a hook, as a twisting mechanism, are mounted on an oscillating member provided on a spindle, and the continuous linear tying material is fed in a direction crossing a spindle axis into engagement with the engaging portion to form a starting point which is folded into a U-shape. In this state, the tying material is delivered to an encompassing guide to thereby guide the tying material around articles to be tied together, while forming two wires by folding the tying material into a substantially U-shape by a feeding force. The engaging portion and the hook are integrally rotated so that a folded extreme end portion and a rear end portion on the other side of the tying material are twisted together with each other to tie articles together. Accordingly, tying can be firmly done with one winding, while forming two wires by automatically folding the continuous linear tying material in half.
摘要翻译： PCT No.PCT / JP96 / 00343 Sec。 371日期1997年8月13日 102（e）日期1997年8月13日PCT提交1996年2月16日PCT公布。公开号WO96 / 25330 PCT 日期1996年8月22日将与捆扎材料接合的接合部分和作为扭转机构的钩安装在设置在主轴上的摆动部件上，并且连续线性捆扎材料沿与主轴轴线交叉的方向进给与接合部分接合以形成折叠成U形的起点。在这种状态下，捆扎材料被输送到围绕的导向件，从而将绑扎材料引导到待捆扎在一起的物品周围，同时通过将捆扎材料通过馈送力折叠成大致U形而形成两根线。接合部和钩一体地旋转，使得捆扎材料另一侧上的折叠的前端部和后端部彼此扭绞在一起，将物品捆扎在一起。因此，可以用一个绕组牢固地进行捆扎，同时通过将连续的线性捆扎材料自动地折叠成两半而形成两根线。

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