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1. 发明授权

US07497963B2 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US07497963B2
公开(公告)日：2009-03-03
申请号：US11032393
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： B44C1/22
CPC分类号： H01L21/67063 , H01L21/31116
摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.
摘要翻译：在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。结果，在基板的表面上不会发生不均匀的蚀刻。此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

2. 发明申请

US20050153553A1 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US20050153553A1
公开(公告)日：2005-07-14
申请号：US11032393
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Seung-Ki Chae , No-Hyun Huh , Wan-Goo Hwang , Jung-Hyun Hwang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/302 , H01L21/311 , H01L21/461 , H01L21/768 , H01L23/522
CPC分类号： H01L21/67063 , H01L21/31116
摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.
摘要翻译：在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。结果，在基板的表面上不会发生不均匀的蚀刻。此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

3. 发明授权

US08361274B2 Etching apparatus and etching method 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：US08361274B2
公开(公告)日：2013-01-29
申请号：US11032651
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/00
CPC分类号： H01L21/6708 , H01J37/3244 , H01L21/3065
摘要： A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.
摘要翻译：真空处理装置具有：真空处理槽; 第一气体导入部，被构造成使得自由基状态的第一处理气体被引入到真空处理槽中并被引导到半导体晶片; 以及第二气体导入部，其被构造成使得与第一处理气体反应的第二处理气体被引入到真空处理槽中并被引导到半导体晶片。第二气体导入部具有设置在为第一气体导入部设置的导入管的任一侧的位置的两个喷淋喷嘴。根据该真空处理装置，可以实现多个处理对象的高速处理。此外，可以确保处理后的加工对象的面内均匀性。

4. 发明申请

US20050150861A1 Etching apparatus and etching method 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：US20050150861A1
公开(公告)日：2005-07-14
申请号：US11032651
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/00 , H01L21/3065 , C23F1/00 , B01D53/02 , B01D59/26
CPC分类号： H01L21/6708 , H01J37/3244 , H01L21/3065
摘要： A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.
摘要翻译：真空处理装置具有：真空处理槽; 第一气体导入部，被构造成使得自由基状态的第一处理气体被引入到真空处理槽中并被引导到半导体晶片; 以及第二气体导入部，其被构造成使得与第一处理气体反应的第二处理气体被引入到真空处理槽中并被引导到半导体晶片。第二气体导入部具有设置在为第一气体导入部设置的导入管的任一侧的位置的两个喷淋喷嘴。根据该真空处理装置，可以实现多个处理对象的高速处理。此外，可以确保处理后的加工对象的面内均匀性。

5. 发明申请

US20070151669A1 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US20070151669A1
公开(公告)日：2007-07-05
申请号：US11646593
申请日：2006-12-28
申请人： Seiichi Takahashi , Takehisa Miyaya , Soo Lim , Masayuki Satou , Kengo Tsutsumi , Yohei Ono
发明人： Seiichi Takahashi , Takehisa Miyaya , Soo Lim , Masayuki Satou , Kengo Tsutsumi , Yohei Ono
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67748 , C23C14/566 , H01L21/3065 , H01L21/6719 , H01L21/67751
摘要： The present invention provides a vacuum processing apparatus that allows easy exchange of processing chambers. A vacuum processing apparatus of the present invention has a processing chamber and a carrying-in-and-out chamber. The carrying-in-and-out chamber is fixed and located at a position above the processing chamber. The processing chamber can be lowered by a vertically moving mechanism. Therefore, the processing chamber is separated from the carrying-in-and-out chamber by lowering the processing chamber. A conveying means is connected to the processing chamber so that it is possible to easily convey the processing chamber after being removed from the carrying-in-and-out chamber. The operation for exchanging the processing chambers can be simpler than in the conventional systems.
摘要翻译：本发明提供一种允许容易地更换处理室的真空处理装置。本发明的真空处理装置具有处理室和搬入室。进出室被固定并位于处理室上方的位置。处理室可以通过垂直移动的机构降低。因此，通过降低处理室，处理室与进出室分离。传送装置连接到处理室，使得可以在从搬入室移出之后容易地输送处理室。用于更换处理室的操作可以比常规系统更简单。

6. 发明授权

US07682481B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US07682481B2
公开(公告)日：2010-03-23
申请号：US11646593
申请日：2006-12-28
申请人： Seiichi Takahashi , Takehisa Miyaya , Soo Boo Lim , Masayuki Satou , Kengo Tsutsumi , Yohei Ono
发明人： Seiichi Takahashi , Takehisa Miyaya , Soo Boo Lim , Masayuki Satou , Kengo Tsutsumi , Yohei Ono
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67748 , C23C14/566 , H01L21/3065 , H01L21/6719 , H01L21/67751
摘要： The present invention provides a vacuum processing apparatus that allows easy exchange of processing chambers. A vacuum processing apparatus of the present invention has a processing chamber and a carrying-in-and-out chamber. The carrying-in-and-out chamber is fixed and located at a position above the processing chamber. The processing chamber can be lowered by a vertically moving mechanism. Therefore, the processing chamber is separated from the carrying-in-and-out chamber by lowering the processing chamber. A conveying means is connected to the processing chamber so that it is possible to easily convey the processing chamber after being removed from the carrying-in-and-out chamber. The operation for exchanging the processing chambers can be simpler than in the conventional systems.
摘要翻译：本发明提供一种允许容易地更换处理室的真空处理装置。本发明的真空处理装置具有处理室和搬入室。进出室被固定并位于处理室上方的位置。处理室可以通过垂直移动的机构降低。因此，通过降低处理室，处理室与进出室分离。传送装置连接到处理室，使得可以在从搬入室移出之后容易地输送处理室。用于更换处理室的操作可以比常规系统更简单。

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