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    • 4. 发明申请
    • LAMINATE, METHOD FOR PRODUCING SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE
    • 层压板,其制造方法,电子设备部件和电子设备
    • US20120121917A1
    • 2012-05-17
    • US13144856
    • 2010-02-12
    • Shinichi HoshiTakeshi Kondo
    • Shinichi HoshiTakeshi Kondo
    • B32B9/00
    • H01L51/5256C08J7/123C08J2383/04G02F1/133305G02F2201/50Y10T428/31663
    • Disclosed is a laminate comprising a gas barrier layer and a conductor layer, the gas barrier layer being formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content that gradually decreases from a surface of the gas barrier layer in a depth direction, and having a carbon atom content that gradually increases from the surface of the gas barrier layer in the depth direction. Also disclosed are a method of producing the laminate, an electronic device member that includes the laminate, and an electronic device that includes the electronic device member. The above laminate exhibits an excellent gas harrier capability and excellent interlayer adhesion, and the conductor layer of the above laminate has high surface smoothness. Since the above laminate enables an increase in flexibility and a reduction in weight, the laminate may suitably be used as an electronic device member for a display (e.g., organic EL display), a solar battery, or the like. Since the laminate enables roll-to-roll mass production, cost can be reduced.
    • 公开了一种包含气体阻隔层和导体层的层压体,所述阻气层由至少包含氧原子,碳原子和硅原子的材料形成,所述阻气层的氧原子含量为 从阻气层的表面在深度方向逐渐减少,并且具有从气阻层的表面在深度方向上逐渐增加的碳原子含量。 还公开了制造层压体的方法,包括层压体的电子器件部件和包括电子器件部件的电子器件。 上述层压体具有优异的气体吸收能力和优异的层间粘合性,并且上述层压体的导体层具有高的表面光滑度。 由于上述层叠体能够增加柔软度和减轻重量,所以可以适当地用作显示器(例如有机EL显示器),太阳能电池等的电子器件部件。 由于层压体能够进行卷对卷批量生产,所以可以降低成本。
    • 9. 发明申请
    • Semiconductor device and manufacturing method
    • 半导体器件及制造方法
    • US20090242937A1
    • 2009-10-01
    • US12382664
    • 2009-03-20
    • Toshiharu MaruiFumihiko TodaShinichi Hoshi
    • Toshiharu MaruiFumihiko TodaShinichi Hoshi
    • H01L29/778H01L21/336
    • H01L29/7786H01L29/402H01L29/42316H01L29/66462
    • A semiconductor device has source and drain electrodes formed on a substrate, a gate insulation film formed on the substrate between the source and drain electrodes, and a gate electrode formed on the gate insulation film. These elements are all covered by a dielectric sub-insulation film. An opening is formed in the sub-insulation film, partially exposing the gate electrode. A field plate extends from the top of the gate electrode down one side of the gate electrode as far as the sub-insulation film covering the gate insulation film, filling the opening. The thickness of the sub-insulation film can be selected to optimize the separation between the field plate and the substrate for the purpose of reducing current collapse by reducing electric field concentration at the edge of the gate electrode.
    • 半导体器件具有形成在基板上的源极和漏极,在源极和漏极之间的基板上形成的栅极绝缘膜,以及形成在栅极绝缘膜上的栅电极。 这些元件都被绝缘子绝缘膜覆盖。 在副绝缘膜中形成开口,部分地露出栅电极。 场板从栅电极的顶部向下延伸到栅电极的一侧,直到覆盖栅绝缘膜的次绝缘膜填充开口。 可以选择次级绝缘膜的厚度以优化场板和衬底之间的分离,以便通过降低栅电极边缘处的电场浓度来减少电流崩塌。