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1. 发明授权

US08097541B2 Method for surface treating semiconductor 有权
标题翻译：半导体表面处理方法
公开(公告)号：US08097541B2
公开(公告)日：2012-01-17
申请号：US11990440
申请日：2006-08-15
申请人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
发明人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
IPC分类号： H01L21/302
CPC分类号： H01L21/67109 , H01L21/02046 , H01L21/306 , H01L21/67017 , H01L21/67757
摘要： Native oxide film on a semiconductor silicon wafer(s) is dry etched at a temperature of 50° C. or less. Hydrogen treatment is then carried out a temperature of 100° C. or more to bond the dangling bonds with hydrogen. A jig 9 that has been used is again used for loading new semiconductor silicon wafer(s) 10. The wafer(s) on the jig 9 is subjected to removal of a native oxide film and then hydrogen bonding. The resultant heat remains in jig and makes it difficult to maintain the wafers to temperature appropriate to removal of a native oxide film.After treatment of hydrogen bonding, inert gas having temperature of from 0 to −30° C. is injected into reaction vessel 5 and/or treatment preparing vessel 21, in which a native oxide film has been removed.
摘要翻译：半导体硅晶片上的天然氧化物膜在50℃以下的温度下被干法蚀刻。然后进行氢气处理，其温度为100℃以上，以使悬挂键与氢键合。已经使用的夹具9再次用于装载新的半导体硅晶片10.将夹具9上的晶片除去自然氧化膜，然后氢键合。所得到的热量保留在夹具中，并且使得难以将晶片保持适于去除天然氧化物膜的温度。在氢键处理之后，将温度为0〜-30℃的惰性气体注入反应容器5和/或其中去除了自然氧化膜的处理制备容器21。

2. 发明申请

US20090117747A1 Method for Surface Treating Semiconductor 有权
标题翻译：表面处理半导体的方法
公开(公告)号：US20090117747A1
公开(公告)日：2009-05-07
申请号：US11990440
申请日：2006-08-15
申请人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
发明人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01L21/02046 , H01L21/306 , H01L21/67017 , H01L21/67757
摘要： [Task] Native oxide film on a semiconductor silicon wafer(s) is dry etched at a temperature of 50° C. or less. Hydrogen treatment is then carried out a temperature of 100° C. or more to bond the dangling bonds with hydrogen. A jig 9 that has been used is again used for loading new semiconductor silicon wafer(s) 10. The wafer(s) on the jig 9 is subjected to removal of a native oxide film and then hydrogen bonding. The resultant heat remains in jig and makes it difficult to maintain the wafers to temperature appropriate to removal of a native oxide film.[Means for Solution] After treatment of hydrogen bonding, inert gas having temperature of from 0 to −30° C. is injected into reaction vessel 5 and/or treatment preparing vessel 21, in which a native oxide film has been removed.
摘要翻译： [任务]半导体硅晶片上的天然氧化物膜在50℃以下的温度下进行干法蚀刻。然后进行氢气处理，其温度为100℃以上，以使悬挂键与氢键合。已经使用的夹具9再次用于装载新的半导体硅晶片10.将夹具9上的晶片除去自然氧化膜，然后氢键合。所得到的热量保留在夹具中，并且使得难以将晶片保持适于去除天然氧化物膜的温度。 [解决方案]在氢键合处理之后，将温度为0〜-30℃的惰性气体注入已除去自然氧化膜的反应容器5和/或处理制备容器21中。

3. 发明授权

US07682481B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US07682481B2
公开(公告)日：2010-03-23
申请号：US11646593
申请日：2006-12-28
申请人： Seiichi Takahashi , Takehisa Miyaya , Soo Boo Lim , Masayuki Satou , Kengo Tsutsumi , Yohei Ono
发明人： Seiichi Takahashi , Takehisa Miyaya , Soo Boo Lim , Masayuki Satou , Kengo Tsutsumi , Yohei Ono
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67748 , C23C14/566 , H01L21/3065 , H01L21/6719 , H01L21/67751
摘要： The present invention provides a vacuum processing apparatus that allows easy exchange of processing chambers. A vacuum processing apparatus of the present invention has a processing chamber and a carrying-in-and-out chamber. The carrying-in-and-out chamber is fixed and located at a position above the processing chamber. The processing chamber can be lowered by a vertically moving mechanism. Therefore, the processing chamber is separated from the carrying-in-and-out chamber by lowering the processing chamber. A conveying means is connected to the processing chamber so that it is possible to easily convey the processing chamber after being removed from the carrying-in-and-out chamber. The operation for exchanging the processing chambers can be simpler than in the conventional systems.
摘要翻译：本发明提供一种允许容易地更换处理室的真空处理装置。本发明的真空处理装置具有处理室和搬入室。进出室被固定并位于处理室上方的位置。处理室可以通过垂直移动的机构降低。因此，通过降低处理室，处理室与进出室分离。传送装置连接到处理室，使得可以在从搬入室移出之后容易地输送处理室。用于更换处理室的操作可以比常规系统更简单。

4. 发明申请

US20070151669A1 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US20070151669A1
公开(公告)日：2007-07-05
申请号：US11646593
申请日：2006-12-28
申请人： Seiichi Takahashi , Takehisa Miyaya , Soo Lim , Masayuki Satou , Kengo Tsutsumi , Yohei Ono
发明人： Seiichi Takahashi , Takehisa Miyaya , Soo Lim , Masayuki Satou , Kengo Tsutsumi , Yohei Ono
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67748 , C23C14/566 , H01L21/3065 , H01L21/6719 , H01L21/67751
摘要： The present invention provides a vacuum processing apparatus that allows easy exchange of processing chambers. A vacuum processing apparatus of the present invention has a processing chamber and a carrying-in-and-out chamber. The carrying-in-and-out chamber is fixed and located at a position above the processing chamber. The processing chamber can be lowered by a vertically moving mechanism. Therefore, the processing chamber is separated from the carrying-in-and-out chamber by lowering the processing chamber. A conveying means is connected to the processing chamber so that it is possible to easily convey the processing chamber after being removed from the carrying-in-and-out chamber. The operation for exchanging the processing chambers can be simpler than in the conventional systems.
摘要翻译：本发明提供一种允许容易地更换处理室的真空处理装置。本发明的真空处理装置具有处理室和搬入室。进出室被固定并位于处理室上方的位置。处理室可以通过垂直移动的机构降低。因此，通过降低处理室，处理室与进出室分离。传送装置连接到处理室，使得可以在从搬入室移出之后容易地输送处理室。用于更换处理室的操作可以比常规系统更简单。

5. 发明申请

US20100184297A1 METHOD FOR PROTECTING SEMICONDUCTOR WAFER AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于保护半导体晶体管的方法和用于生产半导体器件的方法
公开(公告)号：US20100184297A1
公开(公告)日：2010-07-22
申请号：US12665529
申请日：2008-06-20
申请人： Mikio Takagi , Seiichi Takahashi
发明人： Mikio Takagi , Seiichi Takahashi
IPC分类号： H01L21/306
CPC分类号： H01L21/02063 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： [Task] In a proposed protection method, re-oxidation of a semiconductor wafer is prevented. The method is appropriate for fine patterned semiconductor device. A wafer is dry etched and is subjected to a next step of forming an electrode material film. The dry-etched wafer is maintained not re-oxidized until the next step. The dry etching reaction products are appropriately removed.[Means for Solution] A wafer, on which the dry etching reaction products remain, is protected by the reaction products. The wafer is held in an inert gas protective atmosphere having a pressure of 50 Pa or more and an atmospheric pressure or less, or is held in air equivalent to the air of a clean room or in a gas-mixture atmosphere of said air and an inert gas. The reaction products are decomposed and removed by heating immediately before the formation of an electrode-material film.
摘要翻译： [任务]在所提出的保护方法中，防止了半导体晶片的再氧化。该方法适用于精细图案化半导体器件。将晶片干蚀刻，并进行形成电极材料膜的下一步骤。干蚀刻的晶片保持不再氧化直到下一步骤。适当地除去干蚀刻反应产物。 [解决方案]残留有干蚀刻反应产物的晶片被反应产物保护。将晶片保持在压力为50Pa以上且大气压以下的惰性气体保护气氛中，或者保持在与洁净室的空气或空气的气体混合气氛相当的空气中，惰性气体。反应产物在形成电极材料膜之前立即加热分解和除去。

6. 发明授权

US06675925B2 Working vehicle 有权
标题翻译：工作车辆
公开(公告)号：US06675925B2
公开(公告)日：2004-01-13
申请号：US10077195
申请日：2002-02-15
申请人： Seiichi Takahashi , Ryohei Sumiyoshi , Isamu Kawai , Takashi Yasumi
发明人： Seiichi Takahashi , Ryohei Sumiyoshi , Isamu Kawai , Takashi Yasumi
IPC分类号： B60R1730
CPC分类号： B62D7/06 , B60K17/303 , B62D9/00 , F16D3/221
摘要： A steering apparatus for a working vehicle is provided which is capable of steering dirigible wheels by increased steering angles while checking sideways sliding of the wheels on the ground. For this purpose, a pair of right and left intermediate cases are supported by right and left wheel supports of a vehicle body, each to be pivotable about a first steering axis extending substantially vertically. Each intermediate case supports an axle case in a position thereof opposed to the associated dirigible wheel, to be pivotable about a second steering axis extending substantially vertically. The axle case supports the associated dirigible wheel to be rotatable on an axle.
摘要翻译：提供了一种用于工作车辆的转向装置，其能够在检查车轮在地面上的侧向滑动的同时通过增加的转向角度来转向不可转动的车轮。为此，一对左右的中间壳体由车体的左右车轮支撑件支撑，每一个可绕着基本垂直延伸的第一转向轴线枢转。每个中间壳体在其相对于相关联的刚性轮的位置支撑轴箱，以能够围绕基本上垂直延伸的第二转向轴枢转。轴箱支撑相关联的转向轮可在轴上旋转。

7. 发明授权

US5995387A Switching power-supply unit 失效
标题翻译：开关电源单元
公开(公告)号：US5995387A
公开(公告)日：1999-11-30
申请号：US85615
申请日：1998-05-27
申请人： Seiichi Takahashi , Yasuo Ohashi
发明人： Seiichi Takahashi , Yasuo Ohashi
IPC分类号： H02M3/28 , H02M1/08 , H02M1/14 , H02M3/335
CPC分类号： H02M1/14 , H02M3/33523
摘要： In a switching power-supply unit in which a series circuit comprising a primary winding of a switching transformer and a switching device is provided across the terminals of an input power supply, a noise-eliminating bypass capacitor is connected across the ends of the series circuit. The bypass capacitor forms a short circuit path for high frequency noise having a frequency higher than the switching frequency of the switching device, thereby reducing high-frequency radiant noise.
摘要翻译：在开关电源单元中，在输入电源的端子两端设置有包括开关变压器的初级绕组和开关装置的串联电路的开关电源单元，串联电路的两端连接有消除噪声的旁路电容器。旁路电容器形成具有高于开关器件的开关频率的频率的高频噪声的短路路径，从而降低高频辐射噪声。

8. 外观设计

USD387068S Agricultural tractor 失效
公开(公告)号：USD387068S
公开(公告)日：1997-12-02
申请号：US50525
申请日：1995-11-28
申请人： Hisato Kato , Mitsuhiko Obe , Seiichi Takahashi
设计人： Hisato Kato , Mitsuhiko Obe , Seiichi Takahashi

9. 发明授权

US5452766A Hydraulic control system for a tractor 失效
标题翻译：拖拉机液压控制系统
公开(公告)号：US5452766A
公开(公告)日：1995-09-26
申请号：US138672
申请日：1993-10-18
申请人： Takeshi Imamura , Satoshi Iida , Seiichi Takahashi
发明人： Takeshi Imamura , Satoshi Iida , Seiichi Takahashi
IPC分类号： A01B63/112
CPC分类号： A01B63/112 , B60G2401/12
摘要： A control system for controlling a hydraulically operable link mechanism mounted on a working vehicle. The link mechanism includes lift arms, a hydraulic actuator for controlling the lift arms, a first and a second lower links each connected at one end thereof to a working implement, and connecting rods interconnecting the lift arms and the first and second lower links, respectively. The control system includes a first coupling for pivotally connecting the first lower link to one side of a vehicle body, a second coupling for pivotally connecting the second lower link to the other side of the vehicle body, strain gauges provided for the first and second couplings, respectively, and a control device for controlling the actuator based on detection signals received from the strain gauges.
摘要翻译：一种用于控制安装在工作车辆上的液压可操作的连杆机构的控制系统。连杆机构包括提升臂，用于控制提升臂的液压致动器，分别在其一端连接到工作工具的第一和第二下部连杆，以及将升降臂与第一和第二下部连杆相互连接的连接杆。所述控制系统包括用于将所述第一下部连杆枢转地连接到车身的一侧的第一联接器，用于将所述第二下部连杆枢转地连接到所述车身的另一侧的第二联接件，用于所述第一和第二联接器以及用于根据从应变计接收到的检测信号来控制致动器的控制装置。

10. 发明授权

US08361274B2 Etching apparatus and etching method 有权
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：US08361274B2
公开(公告)日：2013-01-29
申请号：US11032651
申请日：2005-01-10
申请人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
发明人： Kwang-Myung Lee , Ki-Young Yun , Il-Kyoung Kim , Sung-Wook Park , Seung-Ki Chae , No-Hyun Huh , Jae-Wook Kim , Jae-Hyuck An , Woo-Seok Kim , Myeong-Jin Kim , Kyoung-Ho Jang , Shinji Yanagisawa , Kengo Tsutsumi , Seiichi Takahashi
IPC分类号： H01L21/3065 , C23C16/455 , C23C16/00
CPC分类号： H01L21/6708 , H01J37/3244 , H01L21/3065
摘要： A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.
摘要翻译：真空处理装置具有：真空处理槽; 第一气体导入部，被构造成使得自由基状态的第一处理气体被引入到真空处理槽中并被引导到半导体晶片; 以及第二气体导入部，其被构造成使得与第一处理气体反应的第二处理气体被引入到真空处理槽中并被引导到半导体晶片。第二气体导入部具有设置在为第一气体导入部设置的导入管的任一侧的位置的两个喷淋喷嘴。根据该真空处理装置，可以实现多个处理对象的高速处理。此外，可以确保处理后的加工对象的面内均匀性。

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