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41. 发明授权

US06923576B2 Rolling bearing and belt continuously variable transmission 有权
标题翻译：滚动轴承和皮带无级变速器
公开(公告)号：US06923576B2
公开(公告)日：2005-08-02
申请号：US10414308
申请日：2003-04-16
申请人： Susumu Tanaka , Shinji Fujita , Hideyuki Uyama , Nobuaki Mitamura
发明人： Susumu Tanaka , Shinji Fujita , Hideyuki Uyama , Nobuaki Mitamura
IPC分类号： C21D9/36 , C21D9/40 , C22C38/04 , C22C38/18 , C23C8/20 , C23C8/30 , F16C33/32 , F16C33/62
CPC分类号： F16C33/64 , C21D9/36 , C21D9/40 , C22C38/04 , C22C38/18 , C23C8/20 , C23C8/30 , F16C33/32 , F16C2204/64 , F16C2240/54 , F16C2240/76 , F16C2361/63 , F16C2361/65 , Y10S384/913
摘要： A rolling bearing has the radius of curvature of the raceway on an inner ring and an outer ring is from not smaller than 50.1% to not greater than 51.9% of the diameter of the balls, and at least one of the compositions of the bearing is obtained by forming an alloy steel having a carbon (C) content of from not smaller than 0.50% to not greater than 0.90%, a chromium (Cr) content of from not smaller than 3.0% to not greater than 15.0%, a manganese (Mn) content of from not smaller than 0.10% to not greater than 2.0%, a silicon (Si) content of from not smaller than 0.10% to not greater than 2.0%, a molybdenum (Mo) content of zero or not greater than 2.0% by weight, and a vanadium (V) content of zero or not greater than 2.0%, by weight.
摘要翻译：滚动轴承在内圈上具有滚道的曲率半径，外圈的直径不小于球的直径的50.1％至不大于51.9％，并且轴承的组成中的至少一种为通过形成碳（C）含量为0.50％以上且0.90％以下的合金钢，铬（Cr）含量为3.0％以上且15.0％以下的锰， Mn）含量为0.10％以上且2.0％以下，硅（Si）含量为0.10％以上且2.0％以下，钼（Mo）含量为0以上且2.0以下重量％，钒（V）含量为零或不大于2.0％（重量）。

42. 发明授权

US06909537B2 Dispersion compensator whose transmission band is flattened 失效
标题翻译：色散补偿器，其传输带平展
公开(公告)号：US06909537B2
公开(公告)日：2005-06-21
申请号：US10340842
申请日：2003-01-13
申请人： Yuichi Kawahata , Nobuaki Mitamura
发明人： Yuichi Kawahata , Nobuaki Mitamura
IPC分类号： G02B5/28 , G02B5/22 , G02B6/34 , H01S3/00
CPC分类号： G02B6/29358 , G02B6/29394
摘要： Light input from a single-mode fiber is collected into linear light beams by a line focuser, and collected on a VIPA element. A light beam output from the VIPA element is made to pass through a space filter having a predetermined transmission loss characteristic, and focused on a mirror with a focusing lens. The light is reflected by the mirror, again passes through the space filter via the focusing lens, enters the VIPA element, and again enters the single-mode fiber via the line focuser. The insertion loss wavelength characteristic of the wavelength dispersion compensator using the VIPA element is optimized by being superimposed on the transmission loss characteristic of the space filter.
摘要翻译：来自单模光纤的光输入由线聚焦器收集到线性光束中，并收集在VIPA元件上。使从VIPA元件输出的光束通过具有预定的传输损耗特性的空间滤波器，并且聚焦在具有聚焦透镜的反射镜上。光被镜子反射，再次通过聚焦透镜通过空间滤光片，进入VIPA元件，并再次通过线型聚焦器进入单模光纤。使用VIPA元件的波长色散补偿器的插入损耗波长特性通过叠加在空间滤波器的传输损耗特性上被优化。

43. 发明授权

US06900940B2 Optical apparatus and device 失效
标题翻译：光学仪器和设备
公开(公告)号：US06900940B2
公开(公告)日：2005-05-31
申请号：US10164438
申请日：2002-06-10
申请人： Nobuaki Mitamura , Hirotomo Izumi , Yuichi Kawahata
发明人： Nobuaki Mitamura , Hirotomo Izumi , Yuichi Kawahata
IPC分类号： G02B5/28 , G02B6/293 , G02B6/34 , G02B27/00 , G02B1/10
CPC分类号： G02B6/29358 , G02B6/29394
摘要： A VIPA plate having a configuration where a translucent reflection film and a total reflection film are respectively arranged on one side and the other side of a transparent parallel plate can be used as a wavelength dispersion compensator by using a special mirror and a lens. However, the transparency characteristic of the wavelength dispersion compensator using such a VIPA plate is a periodical characteristic which is asymmetric with a central wavelength in a wavelength regime. Accordingly, not parallel light but converged or diverged light having angular dispersion is input to an etalon plate, so that a filter whose transparency characteristic is an asymmetric periodical characteristic which is reverse to the VIPA plate is configured for the central wavelength in the wavelength regime. With this filter, the transparency characteristic of the wavelength dispersion compensator using the VIPA plate is optimized.
摘要翻译：具有透明平行板的一侧和另一侧分别布置半透明反射膜和全反射膜的结构的VIPA板可以通过使用特殊镜和透镜用作波长色散补偿器。然而，使用这种VIPA板的波长色散补偿器的透明度特性是与波长范围中的中心波长不对称的周期特性。因此，不是平行光，而是具有角度色散的会聚或发散的光被输入到标准具板，使得其透明度特性是与VIPA板相反的不对称周期特性的滤光器被配置为波长范围中的中心波长。利用该滤光片，优化使用VIPA板的波长色散补偿器的透明度特性。

44. 发明授权

US06894851B2 Optical device 失效
标题翻译：光学装置
公开(公告)号：US06894851B2
公开(公告)日：2005-05-17
申请号：US10669335
申请日：2003-09-25
申请人： Yujin Yamazaki , Yuichi Kawahata , Nobuaki Mitamura , Hirohiko Sonoda
发明人： Yujin Yamazaki , Yuichi Kawahata , Nobuaki Mitamura , Hirohiko Sonoda
IPC分类号： G02B7/02 , G02B6/34
CPC分类号： G02B6/29358 , G02B6/29398
摘要： A cabinet provided with light input/output holes accommodates a VIPA optical element, a lens, a fixing material fixing the VIPA optical element. A temperature-controlled heater controls the temperature of and inside the cabinet. Both the light input and output holes of the cabinet are blocked by the fixing material and the lens, respectively, so that temperature inside the cabinet is not influenced by the outside air.
摘要翻译：具有光输入/输出孔的机柜容纳VIPA光学元件，透镜，固定VIPA光学元件的固定材料。温控加热器控制机柜内部和室内的温度。机柜的光输入和输出孔分别由固定材料和透镜阻挡，使机柜内的温度不受外界空气的影响。

45. 发明申请

US20050064632A1 Soi wafer and method for manufacturing soi wafer 有权
标题翻译： Soi晶圆及其制造方法
公开(公告)号：US20050064632A1
公开(公告)日：2005-03-24
申请号：US10500580
申请日：2003-10-24
申请人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa , Tomohiko Ohta
发明人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa , Tomohiko Ohta
IPC分类号： C23C14/48 , C30B15/00 , C30B29/06 , C30B31/00 , C30B31/22 , C30B33/00 , C30B33/04 , C30B33/06 , C30B33/10 , H01L21/02 , H01L21/322 , H01L21/762 , H01L27/12 , H01L21/00 , H01L21/30 , H01L21/46 , H01L21/84
CPC分类号： H01L21/76254 , C30B29/06 , C30B33/005 , C30B33/04 , C30B33/06 , C30B33/10
摘要： In a method for producing an SOI wafer comprising steps of implanting hydrogen ions etc. from a surface of a bond wafer 21 to form an ion-implanted layer 24 inside the wafer, bonding the ion-implanted surface of the bond wafer and a surface of a base wafer 22 via an oxide film 23 or directly, and forming an SOI wafer by delaminating a part of the bond wafer at the ion-implanted layer by heat treatment, wherein a silicon wafer consisting of silicon single crystal grown by Chochralski method, which is occupied by N region outside OSF generated in a ring shape and has no defect region detected by Cu deposition method, is used as the bond wafer. Thereby, even in the case of forming an extremely thin SOI layer 27 such that, for example, its thickness is 200 nm or less, there is provided an SOI wafer which has an excellent electric property without causing micro pits by cleaning with hydrofluoric acid etc., and in addition, can be produced without increasing the number of process.
摘要翻译：在制造SOI晶片的方法中，包括从接合晶片21的表面注入氢离子等以在晶片内形成离子注入层24的步骤，将接合晶片的离子注入表面和通过氧化膜23或直接形成基底晶片22，并且通过热处理在离子注入层分层接合晶片的一部分而形成SOI晶片，其中由通过Chochralski方法生长的由硅单晶组成的硅晶片，其被OS环境外的N区域所占据，并且没有通过Cu沉积法检测到缺陷区域，被用作接合晶片。因此，即使在形成极薄的SOI层27的情况下，例如其厚度为200nm以下，则提供了通过用氢氟酸清洗而不引起微坑的电性能优异的SOI晶片，而且可以在不增加处理次数的情况下生产。

46. 发明授权

US06426022B1 Process for producing thin film, thin film and optical instrument including the same 有权
公开(公告)号：US06426022B1
公开(公告)日：2002-07-30
申请号：US09957413
申请日：2001-09-20
申请人： Ken Kawamata , Nobuaki Mitamura
发明人： Ken Kawamata , Nobuaki Mitamura
IPC分类号： G02B520
CPC分类号： C23C14/3421 , C23C14/06 , C23C14/35 , C23C14/352
摘要： A substrate 2 is autorotatably installed in a vacuum chamber 1 at an upper part thereof. MgF2 granules 3 as a film source material are put in a quartz boat 4 and mounted on a magnetron cathode 5. The magnetron cathode 5 is connected through a matching box 6 to a 13.56 MHz radio frequency power source 7. Cooling water 8 for holding the temperature of the magnetron cathode 5 constant flows on a lower face of the magnetron cathode 5. A side face of the vacuum chamber 1 is provided with gas introduction ports 9, 10 for introducing gas in the vacuum chamber 1. A shutter 11 is placed between the magetron cathode 5 and the substrate 2. This structure provides a process enabling forming a thin film at a high speed by sputtering, especially, a high speed sputtering enabling forming a thin fluoride film free of light absorption.

47. 发明授权

US06210542B1 Process for producing thin film, thin film and optical instrument including the same 有权
标题翻译：用于制造薄膜，薄膜和包括其的光学仪器的方法
公开(公告)号：US06210542B1
公开(公告)日：2001-04-03
申请号：US09272731
申请日：1998-11-04
申请人： Ken Kawamata , Nobuaki Mitamura
发明人： Ken Kawamata , Nobuaki Mitamura
IPC分类号： C23C1434
CPC分类号： C23C14/3421 , C23C14/06 , C23C14/35 , C23C14/352
摘要： A substrate 2 is autorotatably installed in a vacuum chamber 1 at an upper part thereof. MgF2 granules 3 as a film source material are put in a quartz boat 4 and mounted on a magnetron cathode 5. The magnetron cathode 5 is connected through a matching box 6 to a 13.56 MHz radio frequency power source 7. Cooling water 8 for holding the temperature of the magnetron cathode 5 constant flows on a lower face of the magnetron cathode 5. A side face of the vacuum chamber 1 is provided with gas introduction ports 9, 10 for introducing gas in the vacuum chamber 1. A shutter 11 is placed between the magnetron cathode 5 and the substrate 2. This structure provides a process enabling forming a thin film at a high speed by sputtering, especially, a high speed sputtering process enabling forming a thin fluoride film free of light absorption in a high speed by sputtering.
摘要翻译：衬底2可自动地安装在真空室1的上部。将作为膜源材料的MgF 2颗粒3放入石英舟4中并安装在磁控管阴极5上。磁控阴极5通过匹配箱6连接到13.56MHz射频电源7.用于保持磁控管阴极5的温度恒定地流过磁控管阴极5的下表面。真空室1的侧面设置有气体导入口9,10，用于在真空室1内引入气体。闸板11位于磁控管阴极5和基板2.这种结构提供能够通过溅射高速形成薄膜的工艺，特别是能够通过溅射高速形成不含光吸收的氟化物薄膜的高速溅射工艺。

48. 发明授权

US06171414B2 Rolling bearing 失效
标题翻译：滚动轴承
公开(公告)号：US06171414B2
公开(公告)日：2001-01-09
申请号：US09098980
申请日：1998-06-17
申请人： Nobuaki Mitamura , Kazuo Sekino , Takaaki Koike , Yukio Takahashi , Mikio Yamaguchi
发明人： Nobuaki Mitamura , Kazuo Sekino , Takaaki Koike , Yukio Takahashi , Mikio Yamaguchi
IPC分类号： C22C3818
CPC分类号： F16C33/30 , F16C33/62 , F16C2360/24 , Y10S384/912
摘要： A rolling bearing comprises races including an inner race and an outer race formed of an alloy steel material; and a plurality of rolling elements formed of a ceramic material and interposed between the inner race and the outer race in such a manner as to be capable of rolling, wherein at least one of the inner race and the outer race is formed of an alloy steel containing 0.7-1.5 wt. % Si, 0.5-2.0 wt. % Cr, and 0.5-2.0 wt. % Mo in a steel, and is subjected to carbonitriding treatment on the surface of the alloy steel material. The rolling bearing excels in the durability and heat resistance even if it is used in a high-temperature high-speed environment, and does not cause a noise fault.
摘要翻译：滚动轴承包括由合金钢材料形成的内圈和外圈的座圈; 以及多个由陶瓷材料形成的滚动元件，其以能够滚动的方式插入在所述内座圈和所述外座圈之间，其中所述内圈和所述外座圈中的至少一个由合金钢含有0.7-1.5重量％％Si，0.5-2.0wt。％Cr和0.5-2.0wt。％Mo，对合金钢材的表面进行碳氮共渗处理。即使在高温高速环境下使用时，滚动轴承的耐久性和耐热性也优异，不会产生噪音故障。

49. 发明授权

US5660647A Rolling bearing with improved wear resistance 失效
标题翻译：滚动轴承具有改善的耐磨性
公开(公告)号：US5660647A
公开(公告)日：1997-08-26
申请号：US512419
申请日：1995-08-08
申请人： Nobuaki Mitamura , Kenji Yamamura
发明人： Nobuaki Mitamura , Kenji Yamamura
IPC分类号： C21D1/06 , C21D9/40 , C22C38/00 , C22C38/24 , C23C8/22 , C23C8/32 , F16C33/30 , F16C33/62
CPC分类号： C22C38/24 , F16C33/30 , F16C33/62 , Y10S148/906
摘要： In a rolling bearing including an inner race, an outer race and a plurality of rolling elements in which at least one member of the inner race, the outer race and the rolling elements is made of an alloy steel containing: 0.1 to 0.7 wt % of C; 0.8 to 2.0 wt % of V; 0.5 to 3.0 wt % of Cr; 0.3 to 1.2 wt % of Mn; 0.3 to 1.5 wt % of Si; at most 3.0 wt % of Mo; and the balance being Fe, the member being carburized or carbonitrided so that the member has a surface carbon concentration of 0.8 to 1.5 wt % and a surface concentration ratio V/C of 1 to 2.5 in order to cause VC-type carbides to be precipitated on a surface of the member, the rolling bearing exhibits improved wear resistance under a severe condition such as a high-temperature environment and simultaneously the rolling bearing has superior productivity.
摘要翻译：在包括内圈，外圈和多个滚动元件的滚动轴承中，内圈，外圈和滚动元件的至少一个构件由合金钢制成，所述合金钢含有：0.1〜0.7重量％ C; 0.8〜2.0重量％的V; 0.5〜3.0重量％的Cr; 0.3〜1.2重量％的Mn; 0.3〜1.5重量％的Si; 至多3.0重量％的Mo; 余量为Fe，该构件被渗碳或碳氮共混，使得该构件的表面碳浓度为0.8〜1.5重量％，表面浓度比V / C为1〜2.5，以使VC型碳化物析出在构件的表面上，滚动轴承在诸如高温环境的严酷条件下表现出改进的耐磨性，同时滚动轴承具有优异的生产率。

50. 发明授权

US09234296B2 Apparatus having heat insulating cylinder with step portion for manufacturing semiconductor single crystal 有权
标题翻译：具有用于制造半导体单晶的台阶部的绝热筒的装置
公开(公告)号：US09234296B2
公开(公告)日：2016-01-12
申请号：US13813551
申请日：2011-07-06
申请人： Shou Takashima , Yuuichi Miyahara , Atsushi Iwasaki , Nobuaki Mitamura , Susumu Sonokawa
发明人： Shou Takashima , Yuuichi Miyahara , Atsushi Iwasaki , Nobuaki Mitamura , Susumu Sonokawa
IPC分类号： C30B15/14 , C30B29/06 , C30B15/30
CPC分类号： C30B15/14 , C30B15/30 , C30B29/06 , Y10T117/1068
摘要： The present invention is a semiconductor single crystal manufacturing apparatus including, within a growth furnace main body, a crucible, and a heater disposed around the crucible, wherein a heat insulating cylinder is disposed around the heater within the growth furnace main body, the heat insulating cylinder includes a step portion dividing the heat insulating cylinder into the upper part and the lower part at the inside surface thereof, the inner diameter of the lower part is larger than the inner diameter of the upper part, a heat insulating plate is disposed below the heater and on the inside of the lower part of the heat insulating cylinder within the growth furnace main body, and the diameter of the heat insulating plate is larger than the inner diameter of the upper part of the heat insulating cylinder and is smaller than the inner diameter of the lower part.
摘要翻译：本发明是一种半导体单晶制造装置，其包括在生长炉主体内的坩埚和设置在坩埚周围的加热器，其中，绝热筒设置在生长炉主体内的加热器周围，绝热气缸包括将绝热筒分成其内表面的上部和下部的台阶部分，下部的内径大于上部的内径，隔热板设置在加热器，并且在生长炉主体内的隔热筒的下部的内侧，绝热板的直径大于绝热筒的上部的内径，并且小于内部下部直径。

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