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41. 发明授权

US07383844B2 Meniscus, vacuum, IPA vapor, drying manifold 失效
标题翻译：半月板，真空，IPA蒸气，干燥歧管
公开(公告)号：US07383844B2
公开(公告)日：2008-06-10
申请号：US11542700
申请日：2006-10-03
申请人： Carl Woods , James P. Garcia , John de Larios
发明人： Carl Woods , James P. Garcia , John de Larios
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , C25D5/22 , C25D17/001 , H01L21/02041 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/67046 , Y10S134/902
摘要： A head is provided which includes a first surface of the head capable of being in close proximity to the wafer surface, and includes a first conduit region on the head where the first conduit region is defined for delivery of a first fluid to wafer of the surface and the first conduit region is defined in a center portion of the head. The head further includes a second conduit region on the head which surrounds the first conduit region, and includes a third conduit region on the head which is defined for delivery of a second fluid to the wafer surface. The third conduit region semi-encloses the first conduit region and the second conduit region. The second conduit region enables a removal of the first fluid and the second fluid. The delivery of the first fluid and the second fluid combined with the removal by the third conduit region of the head defines a controllable meniscus.
摘要翻译：提供了一种头部，其包括能够靠近晶片表面的头部的第一表面，并且包括头部上的第一导管区域，其中限定第一导管区域以将第一流体输送到表面的晶片并且第一管道区域被限定在头部的中心部分中。头部还包括头部上的第二管道区域，其围绕第一管道区域，并且包括头部上的第三管道区域，其被限定用于将第二流体输送到晶片表面。第三管道区域半封闭第一管道区域和第二管道区域。第二管道区域能够移除第一流体和第二流体。第一流体和第二流体的输送与头部的第三导管区域的移除相结合，限定了可控弯液面。

42. 发明申请

US20070107756A1 MENISCUS PROXIMITY SYSTEM FOR CLEANING SEMICONDUCTOR SUBSTRATE SURFACES 有权
标题翻译：用于清洁半导体基板表面的MENISCUS接近系统
公开(公告)号：US20070107756A1
公开(公告)日：2007-05-17
申请号：US11619599
申请日：2007-01-03
申请人： Carl Woods , James Garcia , John de Larios
发明人： Carl Woods , James Garcia , John de Larios
IPC分类号： B08B3/00 , B08B3/12
CPC分类号： H01L21/67051 , C25D5/22 , C25D17/001 , H01L21/02041 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/67046 , Y10S134/902
摘要： A system and apparatus for cleaning a substrate is provided. The system includes a first head configured as a bar shape that extends approximately a diameter of the substrate. The first head is configured for placement on a first side of the substrate. A second head is also provided, and is configured as a bar shape that extends approximately the diameter of the wafer, and the second head is configured for placement on a second side of the substrate, such that the second side is opposite the first side. In this example, each of the first head and the second head have conduits formed therein along the diameter of the substrate for delivering and removing fluids so that a meniscus is capable of being contained between each of the first head and a substrate surface of the first side of the substrate and the second head and a substrate surface of the second side of the substrate.
摘要翻译：提供了一种清洁基板的系统和装置。该系统包括构造为棒状的第一头部，其大致延伸到基底的直径。第一头被配置为放置在基底的第一侧上。还提供了第二头，并且被配置为大致延伸晶片的直径的棒状，并且第二头构造成用于放置在衬底的第二侧上，使得第二侧与第一侧相对。在该示例中，第一头部和第二头部中的每一个具有沿着基底的直径形成在其中的导管，用于输送和移除流体，使得弯液面能够容纳在第一头部和第一头部的基底表面之间基板和第二头部的一侧以及基板的第二侧的基板表面。

43. 发明授权

US07170190B1 Apparatus for oscillating a head and methods for implementing the same 有权
标题翻译：用于摆动头部的装置及其实施方法
公开(公告)号：US07170190B1
公开(公告)日：2007-01-30
申请号：US10738164
申请日：2003-12-16
申请人： Randolph E. Treur , John M. Boyd , Tom Anderson , John de Larios
发明人： Randolph E. Treur , John M. Boyd , Tom Anderson , John de Larios
IPC分类号： H01L23/58 , B08B6/00 , C25F1/00
CPC分类号： B08B1/04 , A46B13/04 , A46B2200/3086 , H01L21/02057 , H01L21/67046
摘要： An apparatus for brushing a surface of a substrate is provided. The apparatus includes a brush for scrubbing the surface of the substrate, a head for holding the brush, and an arm. The arm is configured to hold the head about a connection point. The arm is connected to an oscillating mechanism configured to cause the head to oscillate at an angle of rotation about the connection point.
摘要翻译：提供了一种用于刷洗基片表面的装置。该装置包括用于擦洗基板的表面的刷子，用于保持刷子的头部和臂。臂被配置为围绕连接点保持头部。臂连接到摆动机构，该摆动机构被配置为使头部以围绕连接点的旋转角度摆动。

44. 发明授权

US07003899B1 System and method for modulating flow through multiple ports in a proximity head 失效
公开(公告)号：US07003899B1
公开(公告)日：2006-02-28
申请号：US10957092
申请日：2004-09-30
申请人： James P. Garcia , Fred C. Redeker , John de Larios
发明人： James P. Garcia , Fred C. Redeker , John de Larios
IPC分类号： F26B21/00
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： A method of forming a dynamic liquid meniscus includes forming a meniscus at a first size, the meniscus being formed between a proximity head and a first surface and changing the meniscus to a second size by modulating a flow through at least one of a set of ports on the proximity head. A system for modulating flow through the ports in a proximity head is also described.

45. 发明申请

US20050155629A1 Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same 有权
标题翻译：使用兼容化学物质的底物刷洗涤和邻近清洁干燥顺序，以及用于实施相同化学品的方法，装置和系统
公开(公告)号：US20050155629A1
公开(公告)日：2005-07-21
申请号：US10816432
申请日：2004-03-31
申请人： Michael Ravkin , John de Larios
发明人： Michael Ravkin , John de Larios
IPC分类号： H01L21/00 , B08B7/00
CPC分类号： H01L21/67051 , H01L21/67028 , H01L21/67046 , Y10S134/902
摘要： A method for cleaning and drying a front and a back surface of a substrate is provided. The method includes brush scrubbing the back surface of the substrate using a brush scrubbing fluid chemistry. The method further includes applying a front meniscus onto the front surface of the substrate upon completing the brush scrubbing of the back surface. The front meniscus includes a front cleaning chemistry that is chemically compatible with the brush scrubbing fluid chemistry.
摘要翻译：提供了用于清洁和干燥基板的前表面和后表面的方法。该方法包括使用刷洗涤流体化学刷刷洗衬底的背面。该方法进一步包括在完成后表面的刷子洗涤时将前弯月面施加到基底的前表面上。前弯液面包括与刷洗涤液化学物质化学相容的前清洗化学物质。

46. 发明授权

US07722724B2 Methods for substrate processing in cluster tool configurations having meniscus application systems 有权
标题翻译：具有弯液面应用系统的簇工具配置中的衬底处理方法
公开(公告)号：US07722724B2
公开(公告)日：2010-05-25
申请号：US11809618
申请日：2007-05-31
申请人： Carl Woods , John de Larios
发明人： Carl Woods , John de Larios
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , C25D5/22 , C25D17/001 , H01L21/02041 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/67046 , Y10S134/902
摘要： Method for processing a substrate are provided. The processing occurs when the substrate is moved between cluster tools. One method includes providing the substrate to a cluster tool, and the cluster tool is configured to move the substrate into a meniscus processing module having at least one proximity head. The proximity head is configured to perform operations including applying a fluid onto a region of a surface of the substrate, such the fluid is continuously flown so as to substantially fill the region between a surface of the proximity head and the surface of the substrate. An operation of removing the fluid from the region by applying a vacuum force through the proximity head is also provided. The applying and removing is operated substantially simultaneously so that the fluid forms a controlled fluid meniscus that remains between the surface of the substrate and the surface of the proximity head when the proximity head is positioned over the substrate. The method can include moving one of the controlled fluid meniscus or the substrate so that the controlled fluid meniscus is caused to contact regions of the surface of the substrate to cause fluid processing of the surface of the substrate when in the meniscus processing module. The method can also include moving the substrate out of the meniscus processing module and into a next module of the of the cluster tool or out of the cluster tool.
摘要翻译：提供了处理基板的方法。当基板在集群工具之间移动时发生处理。一种方法包括将基板提供给集群工具，并且集群工具被配置为将衬底移动到具有至少一个邻近头部的弯液面处理模块中。邻近头部被配置为执行包括将流体施加到基底表面的区域上的操作，使得流体连续流动，以便基本上填充邻近头部的表面和基底表面之间的区域。还提供了通过施加真空力通过邻近头部从该区域去除流体的操作。施加和移除基本同时操作，使得当邻近头位于衬底上方时，流体形成保持在衬底的表面和邻近头部的表面之间的受控流体弯液面。该方法可以包括移动受控流体弯月面或基底之一，使得受控流体弯液面在基板的表面接触时，在弯月面处理模块中引起基底表面的流体处理。该方法还可以包括将基板移出弯液面处理模块并进入集群工具的下一个模块或者从集群工具中移出。

47. 发明授权

US07396430B2 Apparatus and method for confined area planarization 有权
标题翻译：限制区域平面化的装置和方法
公开(公告)号：US07396430B2
公开(公告)日：2008-07-08
申请号：US11395881
申请日：2006-03-31
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
IPC分类号： H01L21/306
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

48. 发明授权

US07350316B2 Meniscus proximity system for cleaning semiconductor substrate surfaces 有权
标题翻译：用于清洁半导体衬底表面的半月板接近系统
公开(公告)号：US07350316B2
公开(公告)日：2008-04-01
申请号：US11619599
申请日：2007-01-03
申请人： Carl Woods , James P. Garcia , John de Larios
发明人： Carl Woods , James P. Garcia , John de Larios
IPC分类号： B08B3/00 , F26B5/12
CPC分类号： H01L21/67051 , C25D5/22 , C25D17/001 , H01L21/02041 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/67046 , Y10S134/902
摘要： A system and apparatus for cleaning a substrate is provided. The system includes a first head configured as a bar shape that extends approximately a diameter of the substrate. The first head is configured for placement on a first side of the substrate. A second head is also provided, and is configured as a bar shape that extends approximately the diameter of the wafer, and the second head is configured for placement on a second side of the substrate, such that the second side is opposite the first side. In this example, each of the first head and the second head have conduits formed therein along the diameter of the substrate for delivering and removing fluids so that a meniscus is capable of being contained between each of the first head and a substrate surface of the first side of the substrate and the second head and a substrate surface of the second side of the substrate.
摘要翻译：提供了一种清洁基板的系统和装置。该系统包括构造为棒状的第一头部，其大致延伸到基底的直径。第一头被配置为放置在基底的第一侧上。还提供了第二头，并且被配置为大致延伸晶片的直径的棒状，并且第二头构造成用于放置在衬底的第二侧上，使得第二侧与第一侧相对。在该示例中，第一头部和第二头部中的每一个具有沿着基底的直径形成在其中的导管，用于输送和移除流体，使得弯液面能够容纳在第一头部和第一头部的基底表面之间基板和第二头部的一侧以及基板的第二侧的基板表面。

49. 发明申请

US20070240737A1 Post etch wafer surface cleaning with liquid meniscus 失效
标题翻译：用液体弯液面后蚀刻晶片表面清洁
公开(公告)号：US20070240737A1
公开(公告)日：2007-10-18
申请号：US11477299
申请日：2006-06-28
申请人： Ji Zhu , Seokmin Yun , Mark Wilcoxson , John de Larios
发明人： Ji Zhu , Seokmin Yun , Mark Wilcoxson , John de Larios
IPC分类号： C23G1/00 , C23G1/02 , B08B3/00
CPC分类号： H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.
摘要翻译：公开了一种用于清洁半导体晶片表面的方法。将第一清洁溶液施加到晶片表面以去除晶片表面上的污染物。用晶片表面上的一些污染物去除第一个清洁溶液。接下来，将氧化剂溶液施加到晶片表面。氧化剂溶液在剩余的污染物上形成氧化层。除去氧化剂溶液，然后将第二清洗溶液施加到晶片表面。从晶片表面去除第二清洗溶液。清洁溶液被配置为与剩余的污染物一起基本上除去氧化层。

50. 发明申请

US20070011905A1 Methods and systems for processing a substrate using a dynamic liquid meniscus 失效
标题翻译：使用动态液体弯月面处理衬底的方法和系统
公开(公告)号：US20070011905A1
公开(公告)日：2007-01-18
申请号：US11525278
申请日：2006-09-21
申请人： James Garcia , John de Larios , Michael Ravkin , Fred Redeker , Carl Woods
发明人： James Garcia , John de Larios , Michael Ravkin , Fred Redeker , Carl Woods
IPC分类号： F26B7/00 , F26B5/04
CPC分类号： C25D5/22 , C25D7/12 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/68707 , Y10S134/902
摘要： A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.
摘要翻译：将弯液面从第一表面移动到第二表面的系统和方法包括在头部和第一表面之间形成弯液面。弯液面可以从第一表面移动到相邻的第二表面，相邻的第二表面平行于第一表面。移动弯液面的系统和方法也可以用于沿着基板的边缘移动弯月面。

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