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1. 发明授权

US07069937B2 Vertical proximity processor 失效
标题翻译：垂直接近处理器
公开(公告)号：US07069937B2
公开(公告)日：2006-07-04
申请号：US10404270
申请日：2003-03-31
申请人： James P. Garcia , Mike Ravkin , Carl Woods , Fred C. Redeker , John de Larios
发明人： James P. Garcia , Mike Ravkin , Carl Woods , Fred C. Redeker , John de Larios
IPC分类号： B08B3/00
CPC分类号： C25D5/22 , B08B3/04 , C25D17/001 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/68707 , Y10S134/902
摘要： A method for processing a substrate is provided which includes generating a fluid meniscus on the surface of the vertically oriented substrate, and moving the fluid meniscus over the surface of the vertically oriented substrate to process the surface of the substrate.
摘要翻译：提供了一种用于处理衬底的方法，其包括在垂直取向的衬底的表面上产生流体弯月面，并且使流体弯月面在垂直取向衬底的表面上移动以处理衬底的表面。

2. 发明授权

US07464719B2 Multi-menisci processing apparatus 失效
标题翻译：多功能加工设备
公开(公告)号：US07464719B2
公开(公告)日：2008-12-16
申请号：US11437891
申请日：2006-05-18
申请人： James P. Garcia , Mike Ravkin , Carl Woods , Fred C. Redeker , John de Larios
发明人： James P. Garcia , Mike Ravkin , Carl Woods , Fred C. Redeker , John de Larios
IPC分类号： B08B3/00 , B08B7/04
CPC分类号： C25D5/22 , B08B3/04 , C25D17/001 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/68707 , Y10S134/902
摘要： A substrate preparation apparatus is provided. The apparatus includes a housing configured to be installed in a substrate fabrication facility. The housing includes a manifold for use in preparing a wafer surface. The manifold is configured to include a first process window in a first portion of the manifold. A first fluid meniscus is capable of being defined within the first process windowl. Further included is a second process window in a second portion of the manifold. A second fluid meniscus is capable of being defined within the second process window. An arm is integrated with the housing, and the arm is coupled to the manifold, such that the arm is capable of positioning the manifold in proximity with the substrate during operation. The apparatus therefore provides for the formation of multi-menisci over the surface of a substrate using a single manifold.
摘要翻译：提供了基板制备装置。该装置包括构造成安装在基板制造设备中的壳体。壳体包括用于制备晶片表面的歧管。歧管被配置为在歧管的第一部分中包括第一过程窗口。第一流体弯液面能够在第一过程窗口内被定义。还包括在歧管的第二部分中的第二处理窗口。能够在第二过程窗口内限定第二流体弯月面。臂与壳体一体化，并且臂联接到歧管，使得臂在操作期间能够将歧管定位在基板附近。因此，该装置提供了使用单个歧管在基板的表面上形成多重半月板。

3. 发明授权

US07383844B2 Meniscus, vacuum, IPA vapor, drying manifold 失效
标题翻译：半月板，真空，IPA蒸气，干燥歧管
公开(公告)号：US07383844B2
公开(公告)日：2008-06-10
申请号：US11542700
申请日：2006-10-03
申请人： Carl Woods , James P. Garcia , John de Larios
发明人： Carl Woods , James P. Garcia , John de Larios
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , C25D5/22 , C25D17/001 , H01L21/02041 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/67046 , Y10S134/902
摘要： A head is provided which includes a first surface of the head capable of being in close proximity to the wafer surface, and includes a first conduit region on the head where the first conduit region is defined for delivery of a first fluid to wafer of the surface and the first conduit region is defined in a center portion of the head. The head further includes a second conduit region on the head which surrounds the first conduit region, and includes a third conduit region on the head which is defined for delivery of a second fluid to the wafer surface. The third conduit region semi-encloses the first conduit region and the second conduit region. The second conduit region enables a removal of the first fluid and the second fluid. The delivery of the first fluid and the second fluid combined with the removal by the third conduit region of the head defines a controllable meniscus.
摘要翻译：提供了一种头部，其包括能够靠近晶片表面的头部的第一表面，并且包括头部上的第一导管区域，其中限定第一导管区域以将第一流体输送到表面的晶片并且第一管道区域被限定在头部的中心部分中。头部还包括头部上的第二管道区域，其围绕第一管道区域，并且包括头部上的第三管道区域，其被限定用于将第二流体输送到晶片表面。第三管道区域半封闭第一管道区域和第二管道区域。第二管道区域能够移除第一流体和第二流体。第一流体和第二流体的输送与头部的第三导管区域的移除相结合，限定了可控弯液面。

4. 发明授权

US07198055B2 Meniscus, vacuum, IPA vapor, drying manifold 有权
公开(公告)号：US07198055B2
公开(公告)日：2007-04-03
申请号：US10330843
申请日：2002-12-24
申请人： Carl Woods , James P. Garcia , John de Larios
发明人： Carl Woods , James P. Garcia , John de Larios
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , C25D5/22 , C25D17/001 , H01L21/02041 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/67046 , Y10S134/902
摘要： A head is provided which includes a first surface of the head capable of being in close proximity to the wafer surface, and includes a first conduit region on the head where the first conduit region is defined for delivery of a first fluid to wafer of the surface and the first conduit region is defined in a center portion of the head. The head further includes a second conduit region on the head which surrounds the first conduit region, and includes a third conduit region on the head which is defined for delivery of a second fluid to the wafer surface. The third conduit region semi-encloses the first conduit region and the second conduit region. The second conduit region enables a removal of the first fluid and the second fluid. The delivery of the first fluid and the second fluid combined with the removal by the third conduit region of the head defines a controllable meniscus.

5. 发明授权

US07350316B2 Meniscus proximity system for cleaning semiconductor substrate surfaces 有权
标题翻译：用于清洁半导体衬底表面的半月板接近系统
公开(公告)号：US07350316B2
公开(公告)日：2008-04-01
申请号：US11619599
申请日：2007-01-03
申请人： Carl Woods , James P. Garcia , John de Larios
发明人： Carl Woods , James P. Garcia , John de Larios
IPC分类号： B08B3/00 , F26B5/12
CPC分类号： H01L21/67051 , C25D5/22 , C25D17/001 , H01L21/02041 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/67046 , Y10S134/902
摘要： A system and apparatus for cleaning a substrate is provided. The system includes a first head configured as a bar shape that extends approximately a diameter of the substrate. The first head is configured for placement on a first side of the substrate. A second head is also provided, and is configured as a bar shape that extends approximately the diameter of the wafer, and the second head is configured for placement on a second side of the substrate, such that the second side is opposite the first side. In this example, each of the first head and the second head have conduits formed therein along the diameter of the substrate for delivering and removing fluids so that a meniscus is capable of being contained between each of the first head and a substrate surface of the first side of the substrate and the second head and a substrate surface of the second side of the substrate.
摘要翻译：提供了一种清洁基板的系统和装置。该系统包括构造为棒状的第一头部，其大致延伸到基底的直径。第一头被配置为放置在基底的第一侧上。还提供了第二头，并且被配置为大致延伸晶片的直径的棒状，并且第二头构造成用于放置在衬底的第二侧上，使得第二侧与第一侧相对。在该示例中，第一头部和第二头部中的每一个具有沿着基底的直径形成在其中的导管，用于输送和移除流体，使得弯液面能够容纳在第一头部和第一头部的基底表面之间基板和第二头部的一侧以及基板的第二侧的基板表面。

6. 发明授权

US07003899B1 System and method for modulating flow through multiple ports in a proximity head 失效
公开(公告)号：US07003899B1
公开(公告)日：2006-02-28
申请号：US10957092
申请日：2004-09-30
申请人： James P. Garcia , Fred C. Redeker , John de Larios
发明人： James P. Garcia , Fred C. Redeker , John de Larios
IPC分类号： F26B21/00
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： A method of forming a dynamic liquid meniscus includes forming a meniscus at a first size, the meniscus being formed between a proximity head and a first surface and changing the meniscus to a second size by modulating a flow through at least one of a set of ports on the proximity head. A system for modulating flow through the ports in a proximity head is also described.

7. 发明授权

US07143527B2 System and method for modulating flow through multiple ports in a proximity head 有权
标题翻译：用于调节流过邻近头部的多个端口的系统和方法
公开(公告)号：US07143527B2
公开(公告)日：2006-12-05
申请号：US11273853
申请日：2005-11-14
申请人： James P. Garcia , Fred C. Redeker , John de Larios
发明人： James P. Garcia , Fred C. Redeker , John de Larios
IPC分类号： F26B21/10
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： A method of forming a dynamic liquid meniscus includes forming a meniscus at a first size, the meniscus being formed between a proximity head and a first surface and changing the meniscus to a second size by modulating a flow through at least one of a set of ports on the proximity head. A system for modulating flow through the ports in a proximity head is also described.
摘要翻译：形成动态液体弯液面的方法包括：以第一尺寸形成弯液面，所述弯液面形成在邻近头部和第一表面之间，并且通过调制通过一组端口中的至少一个的流动将所述弯月面改变为第二尺寸在接近头上。还描述了用于调制在邻近头部中的端口的流动的系统。

8. 发明授权

US07234477B2 Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces 有权
标题翻译：使用多个保持在晶片表面附近的入口和出口来干燥半导体晶片表面的方法和装置
公开(公告)号：US07234477B2
公开(公告)日：2007-06-26
申请号：US10261839
申请日：2002-09-30
申请人： John M. de Larios , Mike Ravkin , Carl Woods , Fritz Redeker , James P. Garcia , Afshin Nickhou
发明人： John M. de Larios , Mike Ravkin , Carl Woods , Fritz Redeker , James P. Garcia , Afshin Nickhou
IPC分类号： B08B3/00 , F26B5/04
CPC分类号： H01L21/67051 , B08B3/04 , G03F7/30 , H01L21/67028 , H01L21/67034 , Y10S134/902
摘要： One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously.
摘要翻译：提供了一种衬底制备系统的许多实施例之一，其包括具有头表面的头部，其头表面靠近衬底的表面。该系统还包括用于通过头部将第一流体输送到基底表面的第一导管和用于通过头部将第二流体输送到基底表面的第二导管，其中第二流体不同于第一流体流体。该系统还包括第三导管，用于从基板的表面移除第一流体和第二流体中的每一个，其中第一导管，第二导管和第三导管基本上同时作用。

9. 发明授权

US07395611B2 System processing a substrate using dynamic liquid meniscus 失效
标题翻译：使用动态液体半月板处理衬底的系统
公开(公告)号：US07395611B2
公开(公告)日：2008-07-08
申请号：US11525278
申请日：2006-09-21
申请人： James P. Garcia , John M. de Larios , Michael Ravkin , Fred C. Redeker , Carl Woods
发明人： James P. Garcia , John M. de Larios , Michael Ravkin , Fred C. Redeker , Carl Woods
IPC分类号： F26B21/06
CPC分类号： C25D5/22 , C25D7/12 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/68707 , Y10S134/902
摘要： A system and method of moving a meniscus from a first surface to a second surface includes forming a meniscus between a head and a first surface. The meniscus can be moved from the first surface to an adjacent second surface, the adjacent second surface being parallel to the first surface. The system and method of moving the meniscus can also be used to move the meniscus along an edge of a substrate.
摘要翻译：将弯液面从第一表面移动到第二表面的系统和方法包括在头部和第一表面之间形成弯液面。弯液面可以从第一表面移动到相邻的第二表面，相邻的第二表面平行于第一表面。移动弯液面的系统和方法也可以用于沿着基板的边缘移动弯月面。

10. 发明授权

US07389783B2 Proximity meniscus manifold 失效
标题翻译：近似弯液面歧管
公开(公告)号：US07389783B2
公开(公告)日：2008-06-24
申请号：US10817133
申请日：2004-04-01
申请人： Carl Woods , Michael G. R. Smith , John Parks , James P. Garcia , John M. de Larios
发明人： Carl Woods , Michael G. R. Smith , John Parks , James P. Garcia , John M. de Larios
IPC分类号： B08B3/02
CPC分类号： H01L21/67063 , B05C9/02 , H01L21/02052 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67051 , H01L21/6708 , Y10S134/902
摘要： An apparatus for processing a substrate is provided which includes a first manifold module to generate a fluid meniscus on a substrate surface. The apparatus also includes a second manifold module to connect with the first manifold module and also to move the first manifold module into close proximity to the substrate surface to generate the fluid meniscus.
摘要翻译：提供了一种用于处理衬底的设备，其包括用于在衬底表面上产生流体弯液面的第一歧管模块。该装置还包括与第一歧管模块连接并且还将第一歧管模块移动到靠近衬底表面以产生流体弯液面的第二歧管模块。

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