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1. 发明申请

US20080227369A1 Apparatus and Method for Confined Area Planarization 有权
标题翻译：密闭面平面化装置与方法
公开(公告)号：US20080227369A1
公开(公告)日：2008-09-18
申请号：US12129612
申请日：2008-05-29
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
IPC分类号： B24B57/02 , H05K3/07 , C25F3/00
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

2. 发明授权

US07598175B2 Apparatus and method for confined area planarization 有权
标题翻译：限制区域平面化的装置和方法
公开(公告)号：US07598175B2
公开(公告)日：2009-10-06
申请号：US12129612
申请日：2008-05-29
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
IPC分类号： H01L21/302
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

3. 发明授权

US07396430B2 Apparatus and method for confined area planarization 有权
标题翻译：限制区域平面化的装置和方法
公开(公告)号：US07396430B2
公开(公告)日：2008-07-08
申请号：US11395881
申请日：2006-03-31
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
IPC分类号： H01L21/306
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

4. 发明授权

US07648616B1 Apparatus and method for semiconductor wafer electroplanarization 有权
标题翻译：用于半导体晶片电平面化的装置和方法
公开(公告)号：US07648616B1
公开(公告)日：2010-01-19
申请号：US11394777
申请日：2006-03-31
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , Robert Maraschin
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , Robert Maraschin
IPC分类号： C25F7/00 , C25B9/08
CPC分类号： C25F7/00 , H01L21/67011
摘要： A number of apertures are defined within a wall of a chamber defined to maintain an electrolyte solution. A cation exchange membrane is disposed within the chamber over the number of apertures. The electrolyte solution pressure within the chamber causes the cation exchange membrane to extend through the apertures beyond an outer surface of the chamber. A cathode is disposed within the chamber. The cathode is maintained at a negative bias voltage relative to a top surface of a wafer to be planarized. When the top surface of the wafer is brought into proximity of the cation exchange membrane extending through the apertures, and a deionized water layer is disposed between the top surface of the wafer and the cation exchange membrane, a cathode half-cell is established such that metal cations are liberated from the top surface of the wafer and plated on the cathode in the chamber.
摘要翻译：在限定为维持电解质溶液的室的壁内限定了许多孔。阳离子交换膜在腔室内设置多个孔。室内的电解质溶液压力导致阳离子交换膜延伸穿过孔超过室的外表面。阴极设置在室内。阴极相对于要平坦化的晶片的顶表面保持在负偏压。当晶片的顶表面靠近延伸穿过孔的阳离子交换膜，并且在晶片的顶表面和阳离子交换膜之间设置去离子水层时，建立阴极半电池，使得金属阳离子从晶片的顶表面释放并镀在腔室中的阴极上。

5. 发明授权

US08691027B2 Method for removing material from semiconductor wafer and apparatus for performing the same 有权
标题翻译：从半导体晶片去除材料的方法及其执行方法
公开(公告)号：US08691027B2
公开(公告)日：2014-04-08
申请号：US13670305
申请日：2012-11-06
申请人： Mikhail Korolik , Michael Ravkin , John de Larios , Fritz C. Redeker , John M. Boyd
发明人： Mikhail Korolik , Michael Ravkin , John de Larios , Fritz C. Redeker , John M. Boyd
IPC分类号： B08B3/00 , B08B7/00 , B08B7/04 , H01L21/67
CPC分类号： H01L21/67051 , G03F7/422 , H01L21/02063 , H01L21/02071 , H01L21/6704 , Y10S134/902
摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.
摘要翻译：压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

6. 发明授权

US08623456B2 Methods for atomic layer deposition 有权
标题翻译：原子层沉积方法
公开(公告)号：US08623456B2
公开(公告)日：2014-01-07
申请号：US13605926
申请日：2012-09-06
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： C23C16/22 , C23C16/44
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
摘要翻译：公开了一种通过原子层沉积（ALD）在衬底表面上沉积薄膜的方法。所公开的方法包括将ALD沉积接近头放置在衬底上方，其中至少一个气体通道被配置为将气体分配到衬底表面的活性过程区域。 ALD沉积接近头在存在时延伸超过衬底表面的有效工艺区域并且与其间隔开。在将第一反应气体的脉冲分配在邻近头部下方的衬底表面的有源工艺区域上之后，第二反应气体的脉冲被分配在邻近头部下方的衬底表面的有源工艺区域上以与第一反应气体，以在邻近头部下方的基底表面上形成一部分ALD薄膜。

7. 发明申请

US20110306203A1 INTERCONNECT STRUCTURE AND METHOD OF MANUFACTURING A DAMASCENE STRUCTURE 审中-公开
标题翻译：互连结构和制造大分子结构的方法
公开(公告)号：US20110306203A1
公开(公告)日：2011-12-15
申请号：US13218035
申请日：2011-08-25
申请人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
发明人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.
摘要翻译：提供互连结构，包括具有至少一个开口的介电材料层和在限定开口的侧壁上的第一阻挡层。含钌的第二阻挡层覆盖第一阻挡层，第二阻挡层具有钌区，氧化钌区和富钌区。钌区介于第一阻挡层和氧化钌区之间。钌氧化物区位于钌区和富钌区之间。

8. 发明申请

US20100239767A1 Apparatus for Applying a Plating Solution for Electroless Deposition 审中-公开
标题翻译：用于电镀沉积的电镀溶液的设备
公开(公告)号：US20100239767A1
公开(公告)日：2010-09-23
申请号：US12790558
申请日：2010-05-28
申请人： Yezdi Dordi , William Thie , John M. Boyd , Fritz C. Redeker , Aleksander Owczarz
发明人： Yezdi Dordi , William Thie , John M. Boyd , Fritz C. Redeker , Aleksander Owczarz
IPC分类号： B05D3/00
CPC分类号： H01L21/02074 , C23C18/1628 , C23C18/38 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76883 , Y10S134/902
摘要： An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.
摘要翻译：提供无电镀室。化学镀室包括配置成支撑基板的卡盘和围绕卡盘的基部和侧壁的碗。底座具有沿着底座的内径限定的环形通道。该腔室包括连接到环形通道的排水口。排水口能够去除从卡盘收集的流体。能够清洁和基本上干燥基板的接近头包括在腔室中。还提供了一种执行化学镀操作的方法。

9. 发明申请

US20080254621A1 Wafer Electroless Plating System and Associated Methods 有权
标题翻译：晶圆化学镀系统及相关方法
公开(公告)号：US20080254621A1
公开(公告)日：2008-10-16
申请号：US11735984
申请日：2007-04-16
申请人： William Thie , John M. Boyd , Fritz C. Redeker , Yezdi Dordi , John Parks , Tiruchirapalli Arunagiri , Aleksander Owczarz , Todd Balisky , Clint Thomas , Jacob Wylie
发明人： William Thie , John M. Boyd , Fritz C. Redeker , Yezdi Dordi , John Parks , Tiruchirapalli Arunagiri , Aleksander Owczarz , Todd Balisky , Clint Thomas , Jacob Wylie
IPC分类号： H01L21/44 , B05C11/11 , B05C13/00
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1632 , H01L21/76873
摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).
摘要翻译：公开了一种用于晶片无电镀的干/干输出系统。该系统包括用于晶片入口/出口和干燥操作的上部区域。靠近头部设置在上部区域以执行干燥操作。该系统还包括用于无电镀操作的下部区域。下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。系统是环境控制的。此外，系统与环境受控的托管传输模块（MTM）接口。

10. 发明申请

US20080085370A1 ELECTROLESS PLATING METHOD AND APPARATUS 有权
标题翻译：电镀方法和装置
公开(公告)号：US20080085370A1
公开(公告)日：2008-04-10
申请号：US11539155
申请日：2006-10-05
申请人： William Thie , John M. Boyd , Yezdi Dordi , Fritz C. Redeker
发明人： William Thie , John M. Boyd , Yezdi Dordi , Fritz C. Redeker
IPC分类号： B05D1/18 , B05C3/00
CPC分类号： C23C18/1617 , C23C18/163 , C23C18/1678 , H01L21/67092
摘要： An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.
摘要翻译：提供无电镀系统。该系统包括支撑第一晶片的第一真空卡盘和支撑第二晶片的第二真空卡盘，使得第二晶片的顶表面与第一晶片的顶表面相对。该系统还包括配置成将电镀溶液输送到第一晶片的顶表面的流体输送系统，其中响应于电镀溶液的输送，第二晶片的顶表面靠近第一晶片的顶表面使得电镀溶液接触两个顶表面。还提供了一种将无电镀液施加到基底上的方法。

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