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    • 42. 发明授权
    • Electron beam welding of large vacuum chamber body having a high emissivity coating
    • 具有高发射率涂层的大型真空室体的电子束焊接
    • US08528762B2
    • 2013-09-10
    • US12534534
    • 2009-08-03
    • Shinichi KuritaMehran BehdjatMakoto Inagawa
    • Shinichi KuritaMehran BehdjatMakoto Inagawa
    • B65D6/28
    • B65D7/06B23K15/0006B65D7/38H01L21/67379
    • Embodiments disclosed herein relate to a large vacuum chamber body that has been welded together. The chamber body may have a high emissivity coating on at least one surface therein. Due to the large size of the chamber body, the chamber body may be formed by welding several pieces together rather than forging the body from a single piece of metal. The pieces may be welded together at a location spaced from the corner of the body, which may be under the greatest stress during evacuation, to ensure that the weld, which may be the weakest point in the body, does not fail. At least one surface of the chamber body may be coated with a high emissivity coating to aid in heat transfer from incoming, heated substrates. The high emissivity coating may increase substrate throughput by lowering the time that may be needed to reduce the substrate temperature.
    • 本文公开的实施例涉及已经焊接在一起的大型真空室主体。 腔体可以在其中的至少一个表面上具有高发射率涂层。 由于腔室主体的尺寸较大,可以通过将多个部件焊接在一起而不是从单个金属件锻造主体而形成腔体。 这些部件可以在与身体的角部间隔开的位置处被焊接在一起,该位置在排空期间可能处于最大的应力下,以确保可能是身体中最弱点的焊缝不会失效。 室主体的至少一个表面可以涂覆有高发射率涂层,以帮助来自加热的基底的热传递。 高发射率涂层可以通过降低降低衬底温度所需的时间来增加衬底通量。
    • 44. 发明授权
    • Controllable target cooling
    • 可控制目标冷却
    • US08182661B2
    • 2012-05-22
    • US11190389
    • 2005-07-27
    • Yoshiaki TanaseMakoto InagawaAkihiro Hosokawa
    • Yoshiaki TanaseMakoto InagawaAkihiro Hosokawa
    • C23C14/34
    • C23C14/3407H01J37/3408H01J37/3497Y10T29/49826
    • A sputter target assembly particularly useful for a large panel plasma sputter reactor having a target assembly sealed both to the main processing chamber and a vacuum pumped chamber housing a moving magnetron. The target assembly to which target tiles are bonded includes an integral plate with parallel cooling holes drilled parallel to the principal faces. The ends of the holes may be sealed and vertically extending slots arranged in two staggered groups on each side and machined down to respective pairs of cooling holes on opposite sides of the backing plate in pairs. Four manifolds tubes are sealed to the four groups of slots and provide counter-flowing coolant paths.
    • 特别适用于具有密封于主处理室的目标组件和容纳移动磁控管的真空抽吸室的大型等离子体溅射反应器的溅射靶组件。 目标瓦片被粘合到的目标组件包括具有平行于主面钻出的平行冷却孔的整体板。 孔的端部可以是密封的,并且垂直延伸的槽在每侧上布置成两个交错的组,并且被成对地加工成在背板的相对侧上的相应的一对冷却孔。 四个歧管管被密封到四组槽,并提供反向流动的冷却剂路径。
    • 46. 发明授权
    • Load lock chamber for large area substrate processing system
    • 负载锁定室用于大面积基板处理系统
    • US08070408B2
    • 2011-12-06
    • US12199341
    • 2008-08-27
    • Mehran BehdjatShinichi KuritaMakoto InagawaSuhail Anwar
    • Mehran BehdjatShinichi KuritaMakoto InagawaSuhail Anwar
    • H01L21/677
    • H01L21/67201H01L21/67236
    • The present invention generally includes a load lock chamber for transferring large area substrates into a vacuum processing chamber. The load lock chamber may have one or more separate, environmentally isolated environments. Each processing environment may have a plurality exhaust ports for drawing a vacuum. The exhaust ports may be located at the corners of the processing environment. When a substrate is inserted into the load lock chamber from the factory interface, the environment may need to be evacuated. Due to the exhaust ports located at the corners of the environment, any particles or contaminants that may be present may be pulled to the closest corner and out of the load lock chamber without being pulled across the substrate. Thus, substrate contamination may be reduced.
    • 本发明通常包括用于将大面积基板输送到真空处理室中的负载锁定室。 负载锁定室可以具有一个或多个单独的环境隔离环境。 每个处理环境可以具有用于抽真空的多个排气口。 排气口可以位于处理环境的拐角处。 当基板从出厂界面插入加载锁定室时,环境可能需要抽真空。 由于位于环境角落处的排气口,可能存在的任何颗粒或污染物可被拉到最靠近的角落并且不被拉过载体锁定室。 因此,可能降低衬底污染。
    • 48. 发明申请
    • Heating and Cooling Plate for a Vacuum Chamber
    • 真空室的加热和冷却板
    • US20070267144A1
    • 2007-11-22
    • US11419185
    • 2006-05-18
    • Makoto Inagawa
    • Makoto Inagawa
    • H01L21/306
    • H01L21/67201H01L21/67109
    • A thin plate thermally coupled to a cooling tube is positioned between a heating plate and a substrate and is adapted to serve as a heating plate or a cooling plate for the substrate. The thin plate and heating plate may be positioned in a load lock for the expeditious heating and cooling of large-area substrates. The cooling tube may include a first conduit, a second conduit disposed inside the first conduit having substantially no contact with the first conduit and containing a working fluid, and an isolation region disposed between the first conduit and the second conduit. The working fluid may be thermally decoupled from the thin plate by evacuating the isolation region and thermally coupled to the thin plate by filling the isolation region with a heat-conducting gas.
    • 热耦合到冷却管的薄板位于加热板和基板之间,并且适于用作用于基板的加热板或冷却板。 薄板和加热板可以定位在负载锁定中,以便快速加热和冷却大面积基板。 冷却管可以包括第一管道,第二管道,其设置在第一管道内部,基本上不与第一管道接触并且包含工作流体,以及设置在第一管道和第二管道之间的隔离区域。 工作流体可以通过排出隔离区域而与薄板热分离,并通过用导热气体填充隔离区域而与薄板热耦合。
    • 49. 发明申请
    • Method of improving magnetron sputtering of large-area substrates using a removable anode
    • 使用可移除阳极改进大面积基板的磁控管溅射的方法
    • US20070012559A1
    • 2007-01-18
    • US11247438
    • 2005-10-11
    • Akihiro HosokawaHienminh LeMakoto InagawaJohn White
    • Akihiro HosokawaHienminh LeMakoto InagawaJohn White
    • C23C14/32
    • C23C14/35C23C14/564H01J37/3408H01J37/3438
    • The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the anode assembly contains a conductive member and conductive member support. In one aspect, the processing chamber is adapted to allow the conductive member to be removed from the processing chamber without removing any major components from the processing chamber.
    • 本发明通常提供一种用于处理物理气相沉积(PVD)室中的衬底的表面的装置和方法,其具有增加的阳极表面积以改善大面积衬底上的沉积均匀性。 通常,本发明的各方面可用于平板显示处理,半导体处理,太阳能电池处理或任何其它基板处理。 在一个方面,处理室包含一个或多个阳极组件,其用于增加并且更均匀地分布整个处理室的整个处理区域中的阳极表面区域。 在一个方面,阳极组件包含导电构件和导电构件支撑件。 在一个方面,处理室适于允许导电构件从处理室移除,而不会从处理室中移除任何主要部件。