专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US07816685B2 Integrated circuit device and method for manufacturing integrated circuit device 有权
标题翻译：集成电路器件及集成电路器件制造方法
公开(公告)号：US07816685B2
公开(公告)日：2010-10-19
申请号：US12342446
申请日：2008-12-23
申请人： Daiki Yamada , Yoshitaka Dozen , Eiji Sugiyama , Hidekazu Takahashi
发明人： Daiki Yamada , Yoshitaka Dozen , Eiji Sugiyama , Hidekazu Takahashi
IPC分类号： H01L29/04
CPC分类号： H01L27/1266 , H01L27/124 , H01L27/1292 , H01L27/1296 , H01L29/78621 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81001 , H01L2924/00
摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.
摘要翻译：本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体电极。导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。用激光照射导电膜。

42. 外观设计

USD588180S1 TV camera 有权
公开(公告)号：USD588180S1
公开(公告)日：2009-03-10
申请号：US29298205
申请日：2007-11-30
申请人： Akira Yamane , Eiji Sugiyama , Tetsuro Kato
设计人： Akira Yamane , Eiji Sugiyama , Tetsuro Kato

43. 发明授权

US07475749B2 Fuel tank shroud and related support structure for a motorcycle, and motorcycle incorporating same 失效
标题翻译：燃油箱护罩和摩托车的相关支撑结构，以及结合相同的摩托车
公开(公告)号：US07475749B2
公开(公告)日：2009-01-13
申请号：US11349065
申请日：2006-02-07
申请人： Naoki Yoshida , Eiji Sugiyama
发明人： Naoki Yoshida , Eiji Sugiyama
IPC分类号： B62J23/00
CPC分类号： B62J35/00
摘要： In a motorcycle, a fuel tank shroud is arranged on each side of the fuel tank so that the shrouds cover at least part of both side surfaces of the fuel tank. The rear portions of the shrouds are stably supported to avoid vibration. Each shroud is formed of synthetic resin and integrally includes a main portion for covering the side of a fuel tank, a supporting arm portion extending inward from a rear portion of the main portion and sandwiched between a front portion of a seat and a rear portion of the fuel tank, and an engaging portion projecting from a distal end of the supporting arm portion. A bottom plate of the seat is integrally provided with a latching portion for allowing removable engagement with the engaging portion of the fuel tank shrouds, whereby the rear portion of the shrouds are supported.
摘要翻译：在摩托车中，燃料箱护罩布置在燃料箱的每一侧，使得护罩覆盖燃料箱的两个侧表面的至少一部分。护罩的后部被稳定地支撑以避免振动。每个护罩由合成树脂形成，并且一体地包括用于覆盖燃料箱侧面的主要部分，从主体部分的后部向内延伸并夹在座椅前部和后部之间的支撑臂部分燃料箱和从支撑臂部分的远端突出的接合部分。座椅的底板一体地设置有用于允许与燃料箱护罩的接合部分可拆卸接合的闩锁部分，由此护罩的后部被支撑。

44. 发明申请

US20080311706A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080311706A1
公开(公告)日：2008-12-18
申请号：US12076148
申请日：2008-03-14
申请人： Yoshitaka Dozen , Eiji Sugiyama , Hisashi Ohtani , Takuya Tsurume
发明人： Yoshitaka Dozen , Eiji Sugiyama , Hisashi Ohtani , Takuya Tsurume
IPC分类号： H01L21/56
CPC分类号： H01L23/293 , H01L27/12 , H01L27/1214 , H01L2924/0002 , H01L2924/12044 , H05K1/185 , H05K1/189 , H01L2924/00
摘要： To provide a method for manufacturing a highly-reliable semiconductor device, which is not damaged by external local pressure, with a high yield, a semiconductor device is manufactured by forming an element substrate having a semiconductor element formed using a single-crystal semiconductor substrate or an SOI substrate, providing the element substrate with a fibrous body formed from an organic compound or an inorganic compound, applying a composition containing an organic resin to the element substrate and the fibrous body so that the fibrous body is impregnated with the organic resin, and heating to provide the element substrate with a sealing layer in which the fibrous body formed from an organic compound or an inorganic compound is contained.
摘要翻译：为了提供一种以高产率制造不被外部局部压力损坏的高可靠性半导体器件的方法，通过形成具有使用单晶半导体衬底形成的半导体元件的元件衬底或 SOI衬底，为元件衬底提供由有机化合物或无机化合物形成的纤维体，将含有有机树脂的组合物施加到元件衬底和纤维体上，以使纤维体浸渍有机树脂，以及加热以向元件基板提供包含由有机化合物或无机化合物形成的纤维体的密封层。

45. 外观设计

USD565621S1 TV camera 有权
标题翻译：电视摄像机
公开(公告)号：USD565621S1
公开(公告)日：2008-04-01
申请号：US29277475
申请日：2007-02-27
申请人： Akira Yamane , Eiji Sugiyama , Tetsuro Kato
设计人： Akira Yamane , Eiji Sugiyama , Tetsuro Kato

46. 发明申请

US20070296037A1 Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US20070296037A1
公开(公告)日：2007-12-27
申请号：US11812813
申请日：2007-06-21
申请人： Yoshitaka Dozen , Tomoyuki Aoki , Hidekazu Takahashi , Daiki Yamada , Eiji Sugiyama , Kaori Ogita , Naoto Kusumoto
发明人： Yoshitaka Dozen , Tomoyuki Aoki , Hidekazu Takahashi , Daiki Yamada , Eiji Sugiyama , Kaori Ogita , Naoto Kusumoto
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L23/293 , H01L23/49855 , H01L23/66 , H01L27/1248 , H01L27/1266 , H01L27/13 , H01L28/10 , H01L2223/6677 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.
摘要翻译：本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值在导电层上形成的绝缘层与导电层的厚度比为至少0.2。此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

47. 发明申请

US20060082035A1 In-magnetic-field heat-treating device 审中-公开
标题翻译：磁场热处理装置
公开(公告)号：US20060082035A1
公开(公告)日：2006-04-20
申请号：US10545585
申请日：2004-02-18
申请人： Eiji Sugiyama , Masaaki Aoki , Hiroyuki Kenju , Ryouichi Utsumi , Kiichi Itagaki
发明人： Eiji Sugiyama , Masaaki Aoki , Hiroyuki Kenju , Ryouichi Utsumi , Kiichi Itagaki
IPC分类号： C21D9/00 , C21D1/04 , H01F1/00
CPC分类号： G11B5/852
摘要： A magnetic annealing device for inserting a recording medium 1 provided with an axial hole formed at a center thereof and having a disk shape into a chamber 10 and applying a heat treatment to the recording medium 1 in a magnetic field is provided with a magnetic circuit for forming a magnetic field in the chamber 10, the magnetic circuit comprises a pair of magnets 4 and 5 disposed with a distance therebetween along an axial direction of the axial hole and having magnetic fields directionally opposed to each other and a first ferromagnetic substance 6 disposed between the pair of magnets 4 and 5, wherein the recording medium 1 to be heat-treated is disposed at an intermediate position between the pair of magnets 4 and 5 facing each other in the state in which the first ferromagnetic substance 6 is inserted into the axial hole. A second ferromagnetic substance 7 having a ring shape is preferably disposed in a periphery of the recording medium 1.
摘要翻译：一种用于将设置有形成在其中心并具有盘形的轴向孔的记录介质1插入到室10中并且在磁场中对记录介质1进行热处理的磁性退火装置设置有用于在室10中形成磁场，磁路包括一对磁体4,5，它们沿着轴向孔的轴向设置有一定距离，并且具有相互定向相对的磁场和第一铁磁体6，一对磁体4和5，其中待热处理的记录介质1设置在一对磁体4和5之间的中间位置处，在第一铁磁性物质6插入到轴向孔。具有环形的第二铁磁性物质7优选设置在记录介质1的周围。

48. 发明申请

US20050285231A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050285231A1
公开(公告)日：2005-12-29
申请号：US11157166
申请日：2005-06-21
申请人： Tatsuya Arao , Yoshitaka Dozen , Daiki Yamada , Eiji Sugiyama , Tomoko Tamura , Junya Maruyama , Nozomi Horikoshi , Yuugo Goto
发明人： Tatsuya Arao , Yoshitaka Dozen , Daiki Yamada , Eiji Sugiyama , Tomoko Tamura , Junya Maruyama , Nozomi Horikoshi , Yuugo Goto
IPC分类号： H01L21/461 , H01L21/68 , H01L21/77 , H01L23/58
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/97 , H01L27/1214 , H01L27/1218 , H01L27/1255 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/14 , H01L2924/15788 , H01L2924/19041 , H01L2924/00
摘要： An efficient mass-production method of very small devices that can receive or transmit data in touch, preferably, out of touch is provided by forming an integrated circuit made of a thin film over a large glass substrate and transferring the integrated circuit to another backing to be divided. Especially, the integrated circuit made of a thin film is difficult to use since there is a threat that the integrated circuit is flied in all directions as the integrated circuit is extremely thin. According to the present invention, multiple holes or grooves reaching the peel layer are provided, and a material body having a pattern shape that does not cover the holes (or grooves) and the device portion is provided, then, gas or liquid containing fluorine halide is introduced to remove selectively the peel layer.
摘要翻译：通过在大玻璃基板上形成由薄膜制成的集成电路并将集成电路传送到另一个背衬来提供可以接收或传输触摸数据，优选不接触的非常小的器件的有效批量生产方法被分割特别是，由于集成电路非常薄，因此存在集成电路在各个方向上飞行的威胁，因此难以使用由薄膜制成的集成电路。根据本发明，提供到达剥离层的多个孔或槽，并且设置具有不覆盖孔（或沟槽）和器件部分的图案形状的材料体，然后将含有卤化物的气体或液体被引入以选择性地去除剥离层。

49. 发明授权

US4891729A Semiconductor integrated-circuit apparatus 失效
标题翻译：半导体集成电路设备
公开(公告)号：US4891729A
公开(公告)日：1990-01-02
申请号：US325913
申请日：1989-03-20
申请人： Eiji Sugiyama , Mitsuaki Natsume , Toshiharu Saito
发明人： Eiji Sugiyama , Mitsuaki Natsume , Toshiharu Saito
IPC分类号： H01L27/118 , H03K19/003 , H03K19/086 , H03K19/177
CPC分类号： H03K19/17736 , H01L27/11801 , H03K19/00307 , H03K19/086 , H03K19/17704 , H03K19/17784 , H03K19/17796 , H01L2924/14
摘要： A semiconductor integrated-circuit apparatus includes a electro-conductive layer formed on a substrate, a plurality of internal cells formed on the electro-conductive layer, a plurality of bonding pads arranged around the internal cells, and a plurality of bias cells which are common to the plurality of internal cells and which generate a predetermined voltage. A plurality of bias buffer circuits supply the predetermined voltage generated in the bias cells to the internal cells.

50. 发明授权

US4779011A Latch circuit having two hold loops 失效
标题翻译：锁存电路具有两个保持环路
公开(公告)号：US4779011A
公开(公告)日：1988-10-18
申请号：US24717
申请日：1987-03-11
申请人： Hiroyuki Tsunoi , Yasunori Kanai , Eiji Sugiyama , Motohiro Seto , Naoyuki Ando
发明人： Hiroyuki Tsunoi , Yasunori Kanai , Eiji Sugiyama , Motohiro Seto , Naoyuki Ando
IPC分类号： G11C11/34 , H03K3/037 , H03K3/2885 , H03K3/37 , H03K3/284 , H03K19/086
CPC分类号： H03K3/2885 , H03K3/0375
摘要： A latch circuit has two complementary hold loops therein for improving noise tolerance. The latch circuit includes a first gate for receiving a data and a first clock signal and outputting a first signal in response to a change in the clock signal. A second gate receives a second clock signal having an inverted polarity to that of the first clock signal. A third gate is operatively connected to output terminals of the first and second gates and outputs a first latch output. The latch circuit also includes a first hold line which supplies the first latch output to the second gate and a second hold line which supplies a second latch output of the latch circuit having an inverted polarity to that of the first latch output to the second gate. The second gate may have an inverted input terminal receiving the second latch output.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式