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1. 发明申请

US20060082035A1 In-magnetic-field heat-treating device 审中-公开
标题翻译：磁场热处理装置
公开(公告)号：US20060082035A1
公开(公告)日：2006-04-20
申请号：US10545585
申请日：2004-02-18
申请人： Eiji Sugiyama , Masaaki Aoki , Hiroyuki Kenju , Ryouichi Utsumi , Kiichi Itagaki
发明人： Eiji Sugiyama , Masaaki Aoki , Hiroyuki Kenju , Ryouichi Utsumi , Kiichi Itagaki
IPC分类号： C21D9/00 , C21D1/04 , H01F1/00
CPC分类号： G11B5/852
摘要： A magnetic annealing device for inserting a recording medium 1 provided with an axial hole formed at a center thereof and having a disk shape into a chamber 10 and applying a heat treatment to the recording medium 1 in a magnetic field is provided with a magnetic circuit for forming a magnetic field in the chamber 10, the magnetic circuit comprises a pair of magnets 4 and 5 disposed with a distance therebetween along an axial direction of the axial hole and having magnetic fields directionally opposed to each other and a first ferromagnetic substance 6 disposed between the pair of magnets 4 and 5, wherein the recording medium 1 to be heat-treated is disposed at an intermediate position between the pair of magnets 4 and 5 facing each other in the state in which the first ferromagnetic substance 6 is inserted into the axial hole. A second ferromagnetic substance 7 having a ring shape is preferably disposed in a periphery of the recording medium 1.
摘要翻译：一种用于将设置有形成在其中心并具有盘形的轴向孔的记录介质1插入到室10中并且在磁场中对记录介质1进行热处理的磁性退火装置设置有用于在室10中形成磁场，磁路包括一对磁体4,5，它们沿着轴向孔的轴向设置有一定距离，并且具有相互定向相对的磁场和第一铁磁体6，一对磁体4和5，其中待热处理的记录介质1设置在一对磁体4和5之间的中间位置处，在第一铁磁性物质6插入到轴向孔。具有环形的第二铁磁性物质7优选设置在记录介质1的周围。

2. 发明申请

US20050258784A1 Permanent magnet for particle beam accelerator and magnetic field generator 有权
标题翻译：用于粒子束加速器和磁场发生器的永磁体
公开(公告)号：US20050258784A1
公开(公告)日：2005-11-24
申请号：US10524314
申请日：2004-02-20
申请人： Ken Makita , Eiji Sugiyama , Masaaki Aoki , Kaichi Murakami , Tadamichi Kawakubo , Eiji Nakamura
发明人： Ken Makita , Eiji Sugiyama , Masaaki Aoki , Kaichi Murakami , Tadamichi Kawakubo , Eiji Nakamura
IPC分类号： H01F1/057 , H01F7/02 , H05H7/04 , H05H13/00
CPC分类号： C22C33/0278 , B22F2003/242 , B22F2003/248 , B22F2998/00 , B22F2998/10 , B22F2999/00 , C22C2202/02 , H01F1/0577 , H01F7/0278 , H05H7/04 , B22F3/1007 , B22F2201/20 , B22F9/04 , B22F3/02 , B22F3/24 , B22F2202/05
摘要： A permanent magnet for a particle accelerator and a magnetic field generator, in which Nd—Fe—B based magnets are used but are not demagnetized so easily even when exposed to a radiation, are provided. A permanent magnet for a particle accelerator is used in an environment in which the magnet is exposed to a radiation at an absorbed dose of at least 3,000 Gy. The magnet includes R (which is at least one of the rare-earth elements), B, TM (which is at least one transition element and includes Fe) and inevitably contained impurity elements. The magnet is a sintered magnet that has been magnetized to a permeance coefficient of 0.5 or more and that has a coercivity HcJ of 1.6 MA/m or more.
摘要翻译：提供了一种用于粒子加速器和磁场发生器的永磁体，其中使用Nd-Fe-B系磁体，即使在暴露于辐射时也不容易消磁。用于颗粒加速器的永久磁铁用于磁体以至少3,000Gy的吸收剂量暴露于辐射的环境中。磁体包括R（其是稀土元素中的至少一种），B，TM（其为至少一个过渡元素并且包含Fe）并且不可避免地含有杂质元素。磁体是已经被磁化到渗透系数为0.5以上并且具有1.6MA / m以上的矫顽力H CJ的烧结磁体。

3. 发明授权

US07796002B2 Magnetic field generator for MRI 有权
标题翻译：磁场发生器用于MRI
公开(公告)号：US07796002B2
公开(公告)日：2010-09-14
申请号：US11664261
申请日：2004-09-30
申请人： Shigeo Hashimoto , Masaaki Aoki
发明人： Shigeo Hashimoto , Masaaki Aoki
IPC分类号： H01F7/02
CPC分类号： G01R33/3802 , G01R33/3806 , G01R33/383
摘要： There is provided a magnetic field generator for MRI 10 applicable to a variety of magnetic field generators, and capable of preventing separation of permanent magnets 20 which constitute permanent magnet groups 14a, 14b. The magnetic field generator for MRI 10 includes a pair of permanent magnet groups 14a, 14b. The pair of permanent magnet groups 14a, 14b each including a plurality of permanent magnets 20 bonded to each other, are opposed to each other with a space in between. The permanent magnet groups 14a, 14b have projections 18 projecting more outward than the area of contact with respective pole pieces 16a, 16b. A flange-shaped member 34 is attached to each outer circumferential surface of the pole pieces 16a, 16b, covering a space-facing surface 18a of the projection 18.
摘要翻译：提供了一种用于MRI 10的磁场发生器，其适用于各种磁场发生器，并且能够防止构成永磁体组14a，14b的永磁体20的分离。用于MRI 10的磁场发生器包括一对永磁体组14a，14b。一对永久磁铁组14a，14b，每一个包括彼此结合的多个永久磁铁20，彼此相对，并具有间隔。永久磁体组14a，14b具有比与各个极片16a，16b接触的区域更向外突出的突出部18。凸缘状构件34安装在极靴16a，16b的每个外圆周表面上，覆盖凸起18的面向空间的表面18a。

4. 发明授权

US07084633B2 Magnetic field generating device and MRI equipment using the device 有权
标题翻译：磁场发生装置和使用该装置的MRI设备
公开(公告)号：US07084633B2
公开(公告)日：2006-08-01
申请号：US10513793
申请日：2003-05-19
申请人： Masaaki Aoki , Tsuyoshi Tsuzaki
发明人： Masaaki Aoki , Tsuyoshi Tsuzaki
IPC分类号： G01V3/00
CPC分类号： G01R33/3806 , G01R33/383
摘要： A magnetic field generator (10) capable of generating a more intense magnetic field, and an MRI apparatus (200) using it are provided. Permanent magnets (12a), (12b), (14a), (14b), (16a), (16b), (18a), (18b), (20a), (20b), (22) and (24) are disposed annularly for formation of a magnetic field generation space (30). Ferromagnetic materials (26a) and (26b) are provided near the magnetic field generation space (30), at places passed by a magnetic flux. Each of the permanent magnets (12a), (14a), (16a), (18a) and (20a) surrounding the ferromagnetic material (26a) is magnetized so as to make an S pole on the side of the ferromagnetic material (26a). Each of the permanent magnets (12b), (14b), (16b), (18b) and (20b) surrounding the ferromagnetic material (26b) is magnetized so as to make an N pole on the side of the ferromagnetic material (26b). An MRI apparatus (200) is obtained by using the magnetic field generator (10).
摘要翻译：提供能够产生更强磁场的磁场发生器（10）和使用它的MRI装置（200）。永磁体（12a），（12b），（14a），（14b），（16a），（16b），（18a），（18b），（20a）），（22）和（24）环形地设置以形成磁场产生空间（30）。铁磁材料（26a）和（26b）设置在磁场产生空间（30）附近，在通过磁通的地方。围绕铁磁材料（26a）的永磁体（12a），（14a），（16a），（18a）和（20a）中的每一个被磁化以使S极在铁磁材料（26a）。围绕铁磁材料（26b）的每个永磁体（12b），（14b），（16b），（18b）和（20b）被磁化，以便在铁磁材料（26b）。通过使用磁场发生器（10）获得MRI装置（200）。

5. 发明申请

US20050221356A1 Process for producing ligand binding protein with the use of cell-free protein synthesis system and utilization thereof 审中-公开
标题翻译：使用无细胞蛋白质合成系统产生配体结合蛋白的方法及其利用
公开(公告)号：US20050221356A1
公开(公告)日：2005-10-06
申请号：US11081914
申请日：2005-03-17
申请人： Takanori Kigawa , Takayoshi Matsuda , Masaaki Aoki , Shigeyuki Yokoyama , Kazuo Shinozaki , Motoaki Seki
发明人： Takanori Kigawa , Takayoshi Matsuda , Masaaki Aoki , Shigeyuki Yokoyama , Kazuo Shinozaki , Motoaki Seki
IPC分类号： G01N33/50 , C12N15/09 , C12P19/34 , C12P21/00 , C12P21/02 , C12P21/06 , C12Q1/00 , C12Q1/68 , G01N33/15 , G01N33/53 , G01N33/566
CPC分类号： C12P21/02 , G01N2500/04
摘要： It is intended to provide a process for efficiently producing a ligand binding protein characterized in that this protein or its domain is synthesized in a cell-free protein synthesis system containing a ligand that binds to the protein or its domain. In a preferred embodiment, the above-described ligand is a substance selected from the group consisting of DNAs, RNAs, nucleosides, nucleotides, proteins, peptides, aminoacids, lipids, carbohydrates, derivatives thereof, alkaloids, terpenes, low-molecular weight compounds, coenzymes, low-molecular weight metal complexes and metal ions, while the ligand binding protein or the ligand binding domain thereof is synthesized as a soluble protein.
摘要翻译：旨在提供一种有效产生配体结合蛋白的方法，其特征在于该蛋白质或其结构域在含有与蛋白质或其结构域结合的配体的无细胞蛋白质合成系统中合成。在优选的实施方案中，上述配体是选自DNA，RNA，核苷，核苷酸，蛋白质，肽，氨基酸，脂质，碳水化合物，其衍生物，生物碱，萜烯，低分子量化合物，辅酶，低分子金属络合物和金属离子，而配体结合蛋白或其配体结合结构域作为可溶性蛋白质合成。

6. 发明授权

US06468848B1 Method of fabricating electrically isolated double gated transistor 有权
标题翻译：电隔离双门控晶体管的制造方法
公开(公告)号：US06468848B1
公开(公告)日：2002-10-22
申请号：US09851941
申请日：2001-05-10
申请人： Kaoru Awaka , Masashi Hashimoto , Masaaki Aoki
发明人： Kaoru Awaka , Masashi Hashimoto , Masaaki Aoki
IPC分类号： H01L218238
CPC分类号： H01L27/0629 , H01L21/761 , H01L27/0921
摘要： A gated field effect transistor (gated-FET) in which the body of the FET is electrically isolated from the substrate thereby reducing leakage current through parasitic bipolar action. The back-bias of the channel of the FET is jointly controlled by a diode coupled with a capacitor.
摘要翻译：栅极场效应晶体管（门控FET），其中FET的主体与衬底电隔离，从而通过寄生双极作用减少漏电流。 FET的通道的反偏压由与电容器耦合的二极管共同控制。

7. 发明授权

US5557205A Magnetic field generating apparatus for use in MRI 失效
标题翻译：用于MRI的磁场产生装置
公开(公告)号：US5557205A
公开(公告)日：1996-09-17
申请号：US355163
申请日：1994-12-08
申请人： Kimiharu Ohta , Masaaki Aoki
发明人： Kimiharu Ohta , Masaaki Aoki
IPC分类号： G01R33/20 , A61B5/055 , G01R33/383 , H01F7/02 , G01V3/00
CPC分类号： H01F7/0278 , G01R33/383
摘要： In a magnetic field generating apparatus for use in MRI comprising cylindrical yokes, a pair of permanent magnets of a trapezoidal section opposed in parallel with each other in the cylindrical yokes with a predetermined gap being defined between each of the pole faces of them, permanent magnets of a triangular section in adjacent with both sides of the trapezoidal permanent magnet in which a magnetic field space having a hexagonal cross section in perpendicular to the longitudinal direction defined by pole faces of the trapezoidal permanent magnets and the pole faces of the triangular permanent magnets, whereinthe trapezoidal permanent magnets comprise rare earth system permanent magnet and the direction of magnetization thereof is identical with the direction of the magnetic field in the magnetic field space, the triangular permanent magnets comprise a ferrite system permanent magnet and the direction of magnetization thereof is at a 90.degree. direction relative to the counterface to the magnetic field space, and an extreme end at a yoke abutting face of the trapezoidal permanent magnet corresponds with an extreme end at yoke abutting face of the triangular permanent magnet.
摘要翻译：在用于包括圆柱形轭铁的MRI的磁场产生装置中，一对在圆柱形轭铁中彼此平行相对的梯形部分的永久磁体在其每个极面之间限定有预定的间隙，永磁体与梯形永久磁铁的极面相垂直的纵向方向的六角形截面的磁场空间与三角形永久磁铁的极面相邻的三角形截面，其中所述梯形永磁体包括稀土系永磁体，并且其磁化方向与磁场空间中的磁场方向相同，所述三角形永久磁铁包括铁氧体系永磁体，并且其磁化方向在相对于t的相对面为90°方向磁场空间，梯形永久磁铁的磁轭邻接面的末端与三角形永久磁铁的磁轭邻接面的最末端对应。

8. 发明授权

US5091325A Process for making MOS devices for low-temperature operation 失效
标题翻译：制造用于低温操作的MOS器件的方法
公开(公告)号：US5091325A
公开(公告)日：1992-02-25
申请号：US544045
申请日：1990-06-26
申请人： Shoji Hanamura , Masaaki Aoki , Toshiaki Masuhara
发明人： Shoji Hanamura , Masaaki Aoki , Toshiaki Masuhara
IPC分类号： G11C8/18 , H01L27/092 , H01L27/105 , H01L27/108 , H03K5/1534 , H03K19/00
CPC分类号： H03K5/1534 , G11C8/18 , H01L27/092 , H01L27/10805 , H03K19/0016 , H01L27/105
摘要： Electric charge is supplied to a circuit node being in a charge storing state within a signal processor in response to a signal-processing commencing signal. The processor is operated in a low-temperature range, for example, in the range of temperature below 200K. By this structure, a leakage current is reduced, a high degree of integration equivalent to that of a dynamic circuit can be obtained, and the simplicity of a static circuit not requiring any complicated internal/external timing signals can be realized. Also disclosed is a semiconductor device, and method of forming such semiconductor device, for operation in a range of temperatures below 100.degree. K. The device has, in a silicon surface region where the channel of the device is formed, a low impurity concentration layer (between the source and drain regions of the device). Such low impurity concentration layer is formed by evaporating amorphous silicon on a surface region of a semiconductor region of the device and passing the device through a low-temperature annealing process, the low impurity concentration layer having a lower total impurity concentration than that of the semiconductor region thereunder and having a thickness not more than 100 nm.

9. 发明授权

US4884111A Superconducting device 失效
标题翻译：超导装置
公开(公告)号：US4884111A
公开(公告)日：1989-11-28
申请号：US073408
申请日：1987-07-13
申请人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
发明人： Toshikazu Nishino , Mutsuko Miyake , Ushio Kawabe , Yutaka Harada , Masaaki Aoki , Mikio Hirano
IPC分类号： H01L21/82 , H01L39/22
CPC分类号： H01L39/228 , H01L21/82
摘要： A pair of superconducting electrodes are so formed as to interpose a smeiconductor therebetween, and a control electrode is formed on the seimiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.
摘要翻译：一对超导电极形成为在其间插入半导体，并且通过绝缘膜在半导体上形成控制电极，以便控制超导电极之间的半导体中的超导弱耦合状态。超导电极之间的距离由插入在两个电极之间的超导体的厚度决定，从而以高精度稳定电极间距离，以提高器件特性的均匀性。并且在半导体层上形成两个超导电极并且在这两个电极之间的超导弱耦合状态由第三电极控制的布置中，通过在半导体层中提供不同的杂质分布来增加增益。

10. 发明授权

US4768076A Recrystallized CMOS with different crystal planes 失效
标题翻译：具有不同晶面的重结晶CMOS
公开(公告)号：US4768076A
公开(公告)日：1988-08-30
申请号：US774705
申请日：1985-09-11
申请人： Masaaki Aoki , Toshiaki Masuhara , Terunori Warabisako , Shoji Hanamura , Yoshio Sakai , Seiichi Isomae , Satoshi Meguro , Shuji Ikeda
发明人： Masaaki Aoki , Toshiaki Masuhara , Terunori Warabisako , Shoji Hanamura , Yoshio Sakai , Seiichi Isomae , Satoshi Meguro , Shuji Ikeda
IPC分类号： H01L21/822 , H01L27/06 , H01L27/092 , H01L29/04 , H01L27/04
CPC分类号： H01L29/045 , H01L21/8221 , H01L27/0688 , H01L27/0922
摘要： A CMOS IC is formed on a semiconductor crystalline surface having a plane azimuth (110) or (023), or of a plane azimuth close thereto (plane azimuth substantially in parallel with the above-mentioned planes), in order to increase the speed of operation.At low temperatures, dependency of the carrier mobility upon the plane azimuth becomes more conspicuous as shown in FIG. 1, and the difference of mobility is amplified depending upon the planes. Therefore, employment of the above-mentioned crystalline planes helps produce a great effect when the CMOS device is to be operated at low temperature (e.g., 100.degree. K. or lower), and helps operate the device at high speeds.
摘要翻译：在具有平面方位（110）或（023）或靠近其的平面方位（与上述平面平行的方位角）的半导体晶体表面上形成CMOS IC，以便提高操作。在低温下，载流子迁移率对平面方位角的依赖性变得更显着，如图3所示。 1，并且根据平面放大移动性的差异。因此，当CMOS器件在低温（例如100°K或更低）下工作时，使用上述晶面有助于产生很大的效果，并且有助于高速操作器件。

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