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1. 发明授权

US4891729A Semiconductor integrated-circuit apparatus 失效
标题翻译：半导体集成电路设备
公开(公告)号：US4891729A
公开(公告)日：1990-01-02
申请号：US325913
申请日：1989-03-20
申请人： Eiji Sugiyama , Mitsuaki Natsume , Toshiharu Saito
发明人： Eiji Sugiyama , Mitsuaki Natsume , Toshiharu Saito
IPC分类号： H01L27/118 , H03K19/003 , H03K19/086 , H03K19/177
CPC分类号： H03K19/17736 , H01L27/11801 , H03K19/00307 , H03K19/086 , H03K19/17704 , H03K19/17784 , H03K19/17796 , H01L2924/14
摘要： A semiconductor integrated-circuit apparatus includes a electro-conductive layer formed on a substrate, a plurality of internal cells formed on the electro-conductive layer, a plurality of bonding pads arranged around the internal cells, and a plurality of bias cells which are common to the plurality of internal cells and which generate a predetermined voltage. A plurality of bias buffer circuits supply the predetermined voltage generated in the bias cells to the internal cells.

2. 发明授权

US4952997A Semiconductor integrated-circuit apparatus with internal and external bonding pads 失效
标题翻译：具有内部和外部接合焊盘的半导体集成电路设备
公开(公告)号：US4952997A
公开(公告)日：1990-08-28
申请号：US325914
申请日：1989-03-20
申请人： Eiji Sugiyama , Mitsuaki Natsume , Toshiharu Saito
发明人： Eiji Sugiyama , Mitsuaki Natsume , Toshiharu Saito
IPC分类号： H01L27/118 , H03K19/003 , H03K19/086 , H03K19/177
CPC分类号： H03K19/17736 , H01L27/11801 , H03K19/00307 , H03K19/086 , H03K19/17704 , H03K19/17784 , H03K19/17796 , H01L2924/14
摘要： A semiconductor integrated-circuit apparatus includes an electro-conductive layer formed on a substrate, a plurality of internal cells formed on the electro-conductive layer, a plurality of bonding pads arranged around the internal cells, and a plurality of bias cells which are common to the plurality of internal cells and which generate a predetermined voltage. A plurality of bias buffer circuits supply the predetermined voltage generated in the bias cells to the internal cells.

3. 发明授权

US4904887A Semiconductor integrated circuit apparatus 失效
标题翻译：半导体集成电路装置
公开(公告)号：US4904887A
公开(公告)日：1990-02-27
申请号：US229724
申请日：1988-08-04
申请人： Eiji Sugiyama , Mitsuaki Natsume , Toshiharu Saito
发明人： Eiji Sugiyama , Mitsuaki Natsume , Toshiharu Saito
IPC分类号： H01L27/118 , H03K19/003 , H03K19/086 , H03K19/177
CPC分类号： H03K19/17736 , H01L27/11801 , H03K19/00307 , H03K19/086 , H03K19/17704 , H03K19/17784 , H03K19/17796 , H01L2924/14
摘要： A semiconductor integrated-circuit apparatus includes an electro-conductive layer formed on a substrate, a plurality of internal cells formed on the electro-conductive layer, a plurality of bonding pads arranged around the internal cells, and a plurality of bias cells which are common to the plurality of internal cells and which generate a predetermined voltage. A plurality of bias buffer circuits supply the predetermined voltage generated in the bias cells to the internal cells.

4. 发明授权

US08790994B2 Wireless chip and manufacturing method thereof 有权
标题翻译：无线芯片及其制造方法
公开(公告)号：US08790994B2
公开(公告)日：2014-07-29
申请号：US13596376
申请日：2012-08-28
申请人： Koji Dairiki , Junya Maruyama , Tomoko Tamura , Eiji Sugiyama , Yoshitaka Dozen
发明人： Koji Dairiki , Junya Maruyama , Tomoko Tamura , Eiji Sugiyama , Yoshitaka Dozen
IPC分类号： H01L21/46
CPC分类号： H01L27/1255 , H01L29/78621 , H01L29/78627 , H01L29/78648
摘要： It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.
摘要翻译：本发明的目的在于降低无线芯片的成本，并且通过实现无线芯片的批量生产，进一步降低无线芯片的成本，此外，提供小型化，轻量化的无线芯片。根据本发明，提供一种其中从玻璃基板或石英基板剥离的薄膜集成电路形成在第一基材和第二基材之间的无线芯片。与由硅基板形成的无线芯片相比，根据本发明的无线芯片实现了小型化，薄型化和轻量化。包括在根据本发明的无线芯片中的薄膜集成电路至少具有具有LDD（轻掺杂漏极）结构的n型薄膜晶体管，具有单个漏极结构的p型薄膜晶体管和导电层作为天线起作用。

5. 发明申请

US20140167762A1 COIL DEVICE AND MAGNETIC RESONANCE IMAGING APPARATUS 有权
标题翻译：线圈装置和磁共振成像装置
公开(公告)号：US20140167762A1
公开(公告)日：2014-06-19
申请号：US14237346
申请日：2012-07-31
申请人： Eiji Sugiyama
发明人： Eiji Sugiyama
IPC分类号： G01R33/385
CPC分类号： G01R33/385 , G01R33/3806 , G01R33/3858
摘要： A coil device (1) in which a first coil (2), a second coil (4) and a third coil (3), each having a flat plate shape, are stacked with one other, wherein the first coil has a clearance section, the third coil has a second clearance section, part or whole of a lead wire (44) drawn out from the inside to the peripheral portion of the second coil while striding over the second coil (4) as well as part or whole of a lead wires (37a, 37b) drawn out from the inside to the peripheral portion of the third coil (3) while striding over the third coil are accommodated in the clearance section, and part or whole of lead wires (27a, 26b) drawn out from the inside to the peripheral portion of the first coil (2) while striding over the first coil are accommodated in the second clearance section.
摘要翻译：一种线圈装置（1），其中具有平板形状的第一线圈（2），第二线圈（4）和第三线圈（3）彼此堆叠，其中第一线圈具有间隙部分第三线圈具有第二间隙部分，引导线（44）的一部分或全部从第二线圈（4）的内部延伸到第二线圈的周边部分，以及部分或全部在跨越第三线圈的同时从第三线圈（3）的内部向周边部分拉出的引线（37a，37b）容纳在间隙部分中，并且引出部分或全部引线（27a，26b）从第一线圈（2）的内侧到周边部分跨越第一线圈，容纳在第二间隙部分中。

6. 发明授权

US08242585B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08242585B2
公开(公告)日：2012-08-14
申请号：US12965367
申请日：2010-12-10
申请人： Kazuo Nishi , Hiroki Adachi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara , Tomoyuki Aoki , Eiji Sugiyama , Hironobu Takahashi
发明人： Kazuo Nishi , Hiroki Adachi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara , Tomoyuki Aoki , Eiji Sugiyama , Hironobu Takahashi
IPC分类号： H01L29/06 , H01L31/0352
CPC分类号： H01L31/0203 , H01L27/1446 , H01L27/14618 , H01L31/048 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.
摘要翻译：本发明提供一种半导体器件，其形成在绝缘基板上，通常是半导体器件，其具有可以在光学传感器，太阳能电池或使用TFT的电路中增加布线板的安装强度的结构，并且其可以使其安装在高密度的布线板上，并且还提供其制造方法。根据本发明，在半导体器件中，半导体元件形成在绝缘基板上，在半导体器件的侧面形成有凹部，与半导体元件电连接的导电膜形成在凹部一部分。

7. 发明授权

US07968427B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07968427B2
公开(公告)日：2011-06-28
申请号：US12073617
申请日：2008-03-07
申请人： Eiji Sugiyama , Yoshitaka Dozen , Hisashi Ohtani , Takuya Tsurume
发明人： Eiji Sugiyama , Yoshitaka Dozen , Hisashi Ohtani , Takuya Tsurume
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L23/145 , H01L23/49855 , H01L27/105 , H01L27/115 , H01L27/1248 , H01L27/13 , H01L29/78603 , H01L2223/6677 , H01L2224/16225 , H01L2924/07811 , H01L2924/09701 , H01L2924/12044 , H01Q1/2225 , H01Q1/2283 , H01L2924/00
摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.
摘要翻译：本发明提供一种不容易被外部局部压力损坏的半导体器件。本发明还提供一种以高产率制造不被外部局部压力破坏的高可靠性半导体器件的方法。在具有使用非单晶半导体层形成的半导体元件的元件层上设置有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，加热和压接由此制造半导体器件，将有机化合物或无机化合物的高强度纤维与有机树脂浸渍的元件层和结构体牢固地固定在一起。

8. 发明授权

US07932589B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07932589B2
公开(公告)日：2011-04-26
申请号：US12219382
申请日：2008-07-21
申请人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Takaaki Koen , Yuto Yakubo , Makoto Yanagisawa , Hisashi Ohtani , Eiji Sugiyama , Nozomi Horikoshi
发明人： Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato , Takaaki Koen , Yuto Yakubo , Makoto Yanagisawa , Hisashi Ohtani , Eiji Sugiyama , Nozomi Horikoshi
IPC分类号： H01L23/06
CPC分类号： G06K19/07735 , G06K19/07722 , G06K19/07794 , H01L23/295 , H01L23/3157 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00
摘要： A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.
摘要翻译：一种能够进行无线通信的半导体装置，其在外力方面具有高的可靠性，特别是按压力，并且能够防止集成电路中的静电放电，而不会妨碍电波的接收。半导体器件包括连接到集成电路的片上天线和将接收到的电波中包含的信号或功率发送到片上天线而不接触的增强天线。在半导体器件中，集成电路和片上天线插入通过用树脂浸渍纤维体而形成的一对结构体之间。其中一个结构体设置在片上天线和增强天线之间。在每个结构体的至少一个表面上形成表面电阻值为大约106至1014Ω·cm 2 / cm 2的导电膜。

9. 发明授权

US07851886B2 Semiconductor device and manufacturing method of semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US07851886B2
公开(公告)日：2010-12-14
申请号：US11812813
申请日：2007-06-21
申请人： Yoshitaka Dozen , Tomoyuki Aoki , Hidekazu Takahashi , Daiki Yamada , Eiji Sugiyama , Kaori Ogita , Naoto Kusumoto
发明人： Yoshitaka Dozen , Tomoyuki Aoki , Hidekazu Takahashi , Daiki Yamada , Eiji Sugiyama , Kaori Ogita , Naoto Kusumoto
IPC分类号： H01L29/06
CPC分类号： H01L23/293 , H01L23/49855 , H01L23/66 , H01L27/1248 , H01L27/1266 , H01L27/13 , H01L28/10 , H01L2223/6677 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.
摘要翻译：本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值在导电层上形成的绝缘层与导电层的厚度比为至少0.2。此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。此外，在制造过程中使用覆盖元件形成层侧的基板是其表面上具有支撑体的基板。

10. 发明授权

US07808098B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07808098B2
公开(公告)日：2010-10-05
申请号：US12073613
申请日：2008-03-07
申请人： Eiji Sugiyama , Yoshitaka Dozen , Hisashi Ohtani , Takuya Tsurume
发明人： Eiji Sugiyama , Yoshitaka Dozen , Hisashi Ohtani , Takuya Tsurume
IPC分类号： H01L23/14 , H01Q1/40
CPC分类号： H01L27/1266 , H01L23/145 , H01L23/49855 , H01L27/105 , H01L27/115 , H01L27/1248 , H01L27/13 , H01L29/78603 , H01L2223/6677 , H01L2224/16225 , H01L2924/07811 , H01L2924/12032 , H01L2924/12044 , H01L2924/13091 , H01Q1/2225 , H01Q1/2283 , H01L2924/00
摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a manufacturing method of a highly-reliable semiconductor device, which is not destroyed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element substrate having a semiconductor element formed using a single crystal semiconductor region, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element substrate and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are fixed together.
摘要翻译：本发明提供一种不容易被外部局部压力损坏的半导体器件。本发明还提供了一种高可靠性的半导体器件的制造方法，其不被外部局部压力破坏，而且产率高。在具有使用单晶半导体区域形成的半导体元件的元件基板上设置有有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，进行加热和压接由此制造半导体器件，元件基板和有机化合物的高强度纤维或无机化合物浸渍有机树脂的结构体固定在一起。

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