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41. 发明授权

US06566022B2 Micro devices manufacturing method and apparatus therefor 失效
公开(公告)号：US06566022B2
公开(公告)日：2003-05-20
申请号：US09930310
申请日：2001-08-16
申请人： Shinji Mizutani , Kazuya Ota , Masahiko Yasuda
发明人： Shinji Mizutani , Kazuya Ota , Masahiko Yasuda
IPC分类号： G03F900
CPC分类号： G03F9/708 , G03F9/70 , G03F9/7076 , G03F9/7084
摘要： An exposure method according to the present invention includes a first step of forming on a substrate an alignment mark including a concave and convex pattern; a second step of forming a coat over said alignment mark and the other area on said substrate; a third step of flattening said coat; and a fourth step of applying a photosensitive material on said coat flattened by said third step and projecting a mask pattern thereto. The alignment mark is formed by said concave and convex pattern arranged with a pitch which is smaller than the predetermined value between adjacent convex portions having a width of not less than a predetermined value.

42. 发明授权

US06549269B1 Exposure apparatus and an exposure method 失效
标题翻译：曝光装置和曝光方法
公开(公告)号：US06549269B1
公开(公告)日：2003-04-15
申请号：US09714620
申请日：2000-11-17
申请人： Kenji Nishi , Kazuya Ota
发明人： Kenji Nishi , Kazuya Ota
IPC分类号： G03B2742
CPC分类号： G03F7/70216 , G03F7/70358 , G03F7/70425 , G03F7/70716 , G03F7/70733 , G03F9/70 , G03F9/7003 , G03F9/7015 , G03F9/7026 , G03F9/7088
摘要： Two stages (WS1), (WS2) holding wafers can independently move between a positional information measuring section (PIS) under an alignment system (24a) and an exposing section (EPS) under a projection optical system (PL). The wafer exchange and alignment are performed on the stage (WS1), during which wafer (W2) is exposed on the stage (WS2). A position of each shot area of wafer (WS1) is obtained as a relative position with respect to a reference mark formed on the stage (WS1) in the section (PIS). Relative positional information can be used for the alignment with respect to an exposure pattern when the wafer (WS1) is moved to the section (EPS) to be exposed. Therefore, it is not necessary that a stage position is observed continuously in moving the stage. Exposure operations are performed in parallel by the two wafer stages (WS1) and (WS2) so as to improve the throughput.
摘要翻译：保持晶片的两级（WS1），（WS2）可以在投影光学系统（PL）下方的位置信息测量部分（PIS）和对准系统（24a）之间的曝光部分（EPS）之间独立地移动。在阶段（WS1）上执行晶片交换和对准，在该阶段期间晶片（W2）暴露在平台（WS2）上。获得晶片（WS1）的每个照射区域的位置作为相对于形成在该部分（PIS）中的台面（WS1）上的参考标记的相对位置。当将晶片（WS1）移动到要暴露的部分（EPS）时，相对位置信息可用于相对于曝光图案的对准。因此，在移动台阶段不需要连续观察台位置。曝光操作由两个晶片级（WS1）和（WS2）并行执行，以提高生产率。

43. 发明授权

US06388735B1 Projection exposure system 有权
标题翻译：投影曝光系统
公开(公告)号：US06388735B1
公开(公告)日：2002-05-14
申请号：US09671741
申请日：2000-09-29
申请人： Kazuya Ota
发明人： Kazuya Ota
IPC分类号： G03B2742
CPC分类号： G03F9/70 , G03F7/70241 , G03F7/70358
摘要： A projection exposure system for printing the pattern formed on a reticle onto a wafer includes a reticle stage (5) and a wafer stage. A first reference plate (9) having a first reference pattern (MM1) formed thereon is mounted on the reticle stage (5), and a second reference plate (25) having a second reference pattern (WM1) formed thereon is mounted on the wafer stage. The first reference pattern (MM1) comprises two cross-marks (60a, 60b) spaced apart from each other in X-direction, and the second reference pattern (WM1) comprises two cross-marks (61a, 61b) spaced apart from each other in X-direction. Images of the cross-marks (61a, 61b) of the second reference pattern (WM1) are formed through a projection optical system (2) on the reticle stage (5) and superimposed with the cross-marks (60a, 60b) of the first reference pattern (MM1). A pair of observation optical systems (10, 11) spaced apart from each other in X-direction are used to observe the superimposed images of the corresponding cross-marks (60a and 61a, 60b and 61b), so as to determine the position shifts in X-direction between the corresponding superimposed images at two positions spaced from each other in X-direction. The determined position shifts are used to calculate the variation in projection magnification. The projection exposure system is capable of quick and high precision detection of the magnification of the projection optical system (2).
摘要翻译：用于将形成在掩模版上的图案印刷到晶片上的投影曝光系统包括标线片台（5）和晶片台。具有形成在其上的第一参考图案（MM1）的第一参考板（9）安装在标线片台（5）上，并且在其上形成有第二参考图案（WM1）的第二参考板（25）安装在晶片阶段。第一参考图案（MM1）包括在X方向上彼此间隔开的两个十字标记（60a，60b），并且第二参考图案（WM1）包括彼此间隔开的两个交叉标记（61a，61b）在X方向。通过投影光学系统（2）在标线片台（5）上形成第二参考图案（WM1）的交叉标记（61a，61b）的图像，并与第二参考图案（60）的交叉标记（60a，60b）第一参考模式（MM1）。使用在X方向上彼此间隔开的一对观察光学系统（10,11）来观察相应交叉标记（60a和61a，60b和61b）的叠加图像，以便确定位置偏移在X方向上在X方向上彼此间隔的两个位置处的对应叠加图像之间的X方向。使用确定的位置偏移来计算投影放大率的变化。投影曝光系统能够快速高精度地检测投影光学系统（2）的放大倍数。

44. 发明授权

US06359678B1 Exposure apparatus, method for producing the same, and exposure method 失效
标题翻译：曝光装置及其制造方法以及曝光方法
公开(公告)号：US06359678B1
公开(公告)日：2002-03-19
申请号：US09567971
申请日：2000-05-10
申请人： Kazuya Ota
发明人： Kazuya Ota
IPC分类号： G03B2742
CPC分类号： G03F7/707 , G03F7/70233 , G03F7/7025 , G03F7/70283 , G03F7/70358 , G03F7/70708 , G03F7/70775 , G03F7/70891 , G03F9/70 , G03F9/7026 , G03F9/7034
摘要： When an illumination light beam is radiated by an illumination system at a predetermined angle of incidence &thgr; with respect to a pattern plane of a mask, the illumination light beam is reflected by the pattern plane. The reflected light beam is projected by a projection optical system PO onto a substrate, and a pattern in an area on the mask illuminated with the illumination light beam is transferred onto the substrate. During the transfer, a stage control system is operated to synchronously move a mask stage and a substrate stage in the Y direction, while adjusting a relative position of the mask in the Z direction with respect to the projection optical system, on the basis of predetermined adjusting position information. Accordingly, although the mask side of the projection optical system is non-telecentric, it is possible to effectively suppress the occurrence of the magnification error and the positional discrepancy in a transferred image of the pattern on the substrate due to Z displacement of the mask. As a result, the overlay accuracy is improved. The present invention is especially preferred to perform exposure at high resolution with an illumination light beam in the soft X-ray region.
摘要翻译：当相对于掩模的图案平面以照射系统以预定的入射角照射照明光束时，照明光束被图案平面反射。反射光束通过投影光学系统PO投影到基板上，并且用照明光束照射的掩模上的区域中的图案被转印到基板上。在传送期间，操作台控制系统，以在Y方向上同步移动掩模台和基板台，同时基于预定的方式调整掩模在Z方向上相对于投影光学系统的相对位置调整位置信息。因此，虽然投影光学系统的掩模侧是非远心的，但是由于掩模的Z位移，可以有效地抑制基板上的图案的转印图像的放大误差的发生和位置偏差的发生。结果，覆盖精度提高。本发明特别优选以软X射线区域中的照明光束以高分辨率进行曝光。

45. 发明授权

US6153886A Alignment apparatus in projection exposure apparatus 失效
标题翻译：投影曝光装置中的对准装置
公开(公告)号：US6153886A
公开(公告)日：2000-11-28
申请号：US407610
申请日：1999-09-28
申请人： Shigeru Hagiwara , Hideo Mizutani , Kazuya Ota
发明人： Shigeru Hagiwara , Hideo Mizutani , Kazuya Ota
IPC分类号： G03F9/00 , G01N21/86
CPC分类号： G03F9/7065 , G03F9/7088
摘要： An alignment apparatus according to the present invention is constructed, for example, which is arranged in an exposure apparatus provided with a projection optical system which projects a predetermined pattern formed on a mask onto a substrate under exposure light, which performs relative positioning between the mask and the substrate, which has light irradiating means for irradiating alignment light in a wavelength region different from that of exposure light onto an alignment mark formed on the substrate through the projection optical system and detecting means for detecting light from the alignment mark through the projection optical system, wherein, for alignment light as irradiation light traveling toward the alignment mark and alignment light as detection light from the alignment mark, there are provided correction optical elements for irradiation light and correction optical elements for detection light to cause axial chromatic aberration and magnification chromatic aberration in the opposite directions to axial chromatic aberration and magnification chromatic aberration of the projection optical system between the mask and the substrate, wherein the alignment light is multi-colored light with a plurality of beams different in wavelength from each other in the wavelength region different from that of exposure light, and wherein the correction optical elements for irradiation light or the correction optical elements for detection light each are provided in correspondence with the plurality of beams different in wavelength.
摘要翻译：根据本发明的对准装置例如被构造成设置在具有投影光学系统的曝光装置中，该投影光学系统将在掩模上形成的预定图案投影到曝光光下的基板上，该曝光装置执行掩模以及基板，其具有用于通过投影光学系统将与曝光光不同的波长区域中的对准光照射到形成在基板上的对准标记上的光照射装置和用于通过投影光学器件检测来自对准标记的光的检测装置系统，其中，对于作为向对准标记行进的照射光的对准光和作为来自对准标记的检测光的对准光，设置有用于照射光的校正光学元件和用于检测光的校正光学元件，以产生轴向色差和倍率色彩像差在与掩模和基板之间的投影光学系统的轴向色差和倍率色差的相反方向上，其中对准光是具有多个不同波长区域的波长不同的多个光束的多色光曝光用光，并且其中用于照射光的校正光学元件或用于检测光的校正光学元件各自对应于波长不同的多个光束。

46. 发明授权

US06094255A Projection exposure apparatus and method that floats a plate 失效
标题翻译：抛光板的投影曝光装置和方法
公开(公告)号：US06094255A
公开(公告)日：2000-07-25
申请号：US016934
申请日：1998-02-02
申请人： Kazuya Ota
发明人： Kazuya Ota
IPC分类号： G03F9/00 , G03F7/20 , G05B19/19 , H01L21/027 , G03B27/62 , G03B27/60 , G01B11/00 , G05B1/06
CPC分类号： G03F7/70816 , G03F7/70358 , G03F7/70716 , G05B19/19 , G05B2219/37423 , G05B2219/45027 , G05B2219/49276
摘要： A projection exposure apparatus controls the position of a mask so that the mask is in a desired position without reducing throughput even if the size of the mask is increased. For example, a controller adjusts the pressure of air blown from air holes so that a reticle is floated at a desired distance above a reticle floating plate. The controller also controls the driving of linear motors having stators and sliders, thereby adjusting the pressing force of control bars in contact with the sides of the floating reticle to press the sides of the reticle and control the two-dimensional position of the reticle. Therefore, it is possible to control a mask so that the mask is placed in a desired position without reducing throughput.
摘要翻译：投影曝光装置控制掩模的位置，使得即使掩模的尺寸增加，掩模也处于期望位置而不降低生产量。例如，控制器调节从气孔吹出的空气的压力，使得光罩在标线板浮动板上方所希望的距离处浮起。控制器还控制具有定子和滑块的线性电动机的驱动，由此调节与浮动掩模版的侧面接触的控制杆的按压力，以压制光罩的侧面并控制光罩的二维位置。因此，可以控制掩模，使得掩模被放置在期望位置而不降低生产量。

47. 发明授权

US5715063A Projection exposure method 失效
标题翻译：投影曝光法
公开(公告)号：US5715063A
公开(公告)日：1998-02-03
申请号：US649484
申请日：1996-05-17
申请人： Kazuya Ota
发明人： Kazuya Ota
IPC分类号： G03F9/00 , H01L21/027 , G01B11/00
CPC分类号： G03F9/70
摘要： The X-coordinate of an X-axis search alignment mark (GMX) on a wafer (6) and the Y-coordinates of Y-axis search alignment marks (GMY1 and GMY2) on the wafer (6) are measured by laser step alignment (LSA) method, and the results of the measurement are processed to calculate approximate array coordinates of shot areas (ES1 to ES21) on the wafer (6). Die-by-die alignment and exposure are initiated from the shot area (ES11) that is the closest to the center of the array of all search alignment marks by using a TTR and two-beam interference (LIA) type alignment sensor having a predetermined capture range. At a shot area to be subsequently exposed, the amount of positional displacement between the reticle and the wafer is made to fall within the capture range relative to the initial positional displacement, thereby enabling alignment of high accuracy.
摘要翻译：通过激光步进对准来测量晶片（6）上的X轴搜索对准标记（GMX）的X坐标和晶片（6）上的Y轴搜索对准标记（GMY1和GMY2）的Y坐标（LSA）方法，并且处理测量结果以计算晶片（6）上的拍摄区域（ES1至ES21）的近似阵列坐标。通过使用具有预定的TTR和双光束干涉（LIA）型对准传感器，从与所有搜索对准标记的阵列的中心最接近的拍摄区域（ES11）开始逐一对准和曝光捕获范围。在随后暴露的照射区域，使掩模版和晶片之间的位置偏移量相对于初始位置位移落在捕获范围内，从而能够高精度地对准。

48. 发明授权

US5601957A Micro devices manufacturing method comprising the use of a second pattern overlying an alignment mark to reduce flattening 失效
标题翻译：微器件制造方法包括使用覆盖对准标记的第二图案来减少平坦化
公开(公告)号：US5601957A
公开(公告)日：1997-02-11
申请号：US457232
申请日：1995-06-01
申请人： Shinji Mizutani , Kazuya Ota , Masahiko Yasuda
发明人： Shinji Mizutani , Kazuya Ota , Masahiko Yasuda
IPC分类号： G03F9/00
CPC分类号： G03F9/708 , G03F9/70 , G03F9/7076 , G03F9/7084
摘要： An exposure method according to the present invention includes a first step of forming on a substrate an alignment mark including a concave and convex pattern; a second step of forming a coat over said alignment mark and the other area on said substrate; a third step of flattening said coat; and a fourth step of applying a photosensitive material on said coat flattened by said third step and projecting a mask pattern thereto. The alignment mark is formed by said concave and convex pattern arranged with a pitch which is smaller than the predetermined value between adjacent convex portions having a width of not less than a predetermined value.
摘要翻译：根据本发明的曝光方法包括：在基板上形成包括凹凸图案的对准标记的第一步骤; 在所述对准标记和所述基板上的其他区域上形成涂层的第二步骤; 第三步，使所述外套变平; 以及在由所述第三步骤变平的所述涂层上施加感光材料并向其投射掩模图案的第四步骤。对准标记由所述凹凸图案形成，所述凹凸图案以相对于具有不小于预定值的宽度的相邻凸部之间的预定值小的间距排列。

49. 发明授权

US5569929A Double-beam light source apparatus, position detecting apparatus and aligning apparatus 失效
公开(公告)号：US5569929A
公开(公告)日：1996-10-29
申请号：US470889
申请日：1995-06-06
申请人： Hideo Mizutani , Kazuya Ota
发明人： Hideo Mizutani , Kazuya Ota
IPC分类号： G03F9/00 , G01N21/86 , G06K7/015 , G01B11/00
CPC分类号： G03F9/7049 , G03F9/7076
摘要： A position detecting apparatus comprises a double-beam producing device for producing two beams different in frequency from each other, which are guided to irradiate a diffraction grating on an object to be inspected in two predetermined directions, and a detector photoelectrically detecting through an objective optical system diffracted light produced by the diffraction grating, in which the double-beam producing device comprises a light source for supplying a beam of a single wavelength or multiple wavelengths, a beam splitting device for splitting the beam from the light source into two predetermined beams, a relay optical system for converging the two split beams at a predetermined position, and a frequency difference producing device disposed at or near a converging position by the relay optical system, for producing a predetermined frequency difference between the two split beams.

50. 发明授权

US5160849A Diffraction-type displacement detector for alignment of mask and wafer 失效
$Diffraction-type displacement detector for alignment of mask and wafer$
标题翻译：用于对准掩模和晶片的衍射型位移检测器
公开(公告)号：US5160849A
公开(公告)日：1992-11-03
申请号：US642384
申请日：1991-01-17
申请人： Kazuya Ota , Nobutaka Magome
发明人： Kazuya Ota , Nobutaka Magome
IPC分类号： G01D5/38 , G01B11/00 , G03F7/20 , G03F9/00 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70633 , G03F9/7049
摘要： A displacement detector comprises a beam irradiation device for irradiating beams almost equal in wavelength on a diffraction grating provided on an object to be measured from two directions different each other, a photoelectric detector for detecting an interference intensity of specific diffracted rays generated from the diffraction grating, and a measuring device for measuring a displacement of the object to be measured with reference to a grating pitch direction of the diffraction grating according to an outgoing signal of the photoelectric detector; the photoelectric detector is equipped with a first photoelectric detector for detecting an interference intensity of diffracted rays of an angle of diffraction running in the said direction from the diffraction grating, and a second photoelectric detector for detecting an interference intensity of diffracted rays different in angle of diffraction running in the same direction from the diffraction grating; the measuring device has a first measuring portion for measuring a value corresponding to a displacement of the object to be measured according to an outgoing signal of the first photoelectric detector, and a second measuring portion for measuring a value corresponding to a displacement of the object to be measured according to an outgoing signal of the second photoelectric detector, outputting at least one mean value of the measured value of the first measuring portion and the measured value of the second measuring portion.
摘要翻译：位移检测器包括用于从设置在待测物体上的衍射光栅在两个方向彼此不同的方向照射波长几乎相等的光束照射装置，用于检测由衍射光栅产生的特定衍射光线的干涉强度的光电检测器以及测量装置，用于根据光电检测器的输出信号，根据衍射光栅的光栅间距方向测量待测物体的位移; 光电检测器配备有第一光电检测器，用于检测来自衍射光栅的沿所述方向的衍射角的衍射光线的干涉强度;以及第二光电检测器，用于检测与衍射光线的角度不同的衍射光线的干涉强度绕衍射光栅在相同方向上的衍射; 测量装置具有第一测量部分，用于根据第一光电检测器的输出信号测量对应于被测量物体的位移的值;以及第二测量部分，用于测量与物体的位移对应的值根据第二光电检测器的输出信号进行测量，输出第一测量部分的测量值和第二测量部分的测量值的至少一个平均值。

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