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    • 9. 发明授权
    • Alignment method and exposure system
    • 对准方法和曝光系统
    • US5907405A
    • 1999-05-25
    • US985906
    • 1997-12-05
    • Shinji MizutaniNobutaka Magome
    • Shinji MizutaniNobutaka Magome
    • G03F7/20G03F9/00G01B11/00
    • G03F7/70425G03F9/70
    • Alignment is performed with a high degree of accuracy by detecting an offset in the Z position of a wafer mark. A focal position detecting system of a multipoint type is provided which irradiates spot beams on a plurality of measurement points substantially equally distributed on the exposure field of an projection optical system and detects the heights or levels of the irradiated positions. An alignment illumination beam for detecting the position of the wafer mark is irradiated as a slit beam from an alignment sensor, and the spot beams are set so as to be overlaid with the irradiated position of the slit beam. A sample shot where the measured value of a level at the irradiated position of the spot beam exceeds an allowable range of the measured value of a level at another measurement point is excluded from alignment data, and the coordinate positions of each shot area on a wafer are calculated by an EGA method.
    • 通过检测晶片标记的Z位置的偏移,以高精度执行对准。 提供一种多点式的焦点位置检测系统,其将基本上均匀地分布在投影光学系统的曝光场上的多个测量点上的点光束照射并检测照射位置的高度或水平。 用于检测晶片标记的位置的对准照明光束作为来自对准传感器的狭缝光束照射,并且将点光束设定为与狭缝光束的照射位置重叠。 点光源的照射位置处的电平的测量值超过另一测量点处的电平的测量值的允许范围的采样镜头被排除在对准数据之外,并且晶片上每个照射区域的坐标位置 通过EGA方法计算。
    • 10. 发明授权
    • Exposure method and apparatus
    • 曝光方法和装置
    • US6163366A
    • 2000-12-19
    • US968422
    • 1997-11-12
    • Hiroki OkamotoMasaharu KawakuboShinji Mizutani
    • Hiroki OkamotoMasaharu KawakuboShinji Mizutani
    • G03F7/20G03F9/00G03B27/32
    • G03F7/70458G03F7/70883G03F9/7003
    • In the exposure method and apparatus, the distortion data of the projection lens in each exposure unit itself has already been known for each exposure unit. Accordingly, when the exposure unit which formed the alignment target layer has already been known, the known data of this exposure unit is used to correct at least one of the projection magnification and shot rotation determined according to multipoint EGA operation, and the exposure apparatus is adjusted by the amount of this correction. When the exposure unit forming the alignment target layer is unknown, the alignment mark exposure unit is specified from the state of distribution of non-linear error computed from the alignment mark measured values within a shot. Under thus determined correct projection magnification and shot rotation, a shot area is accurately overlaid with and exposed to a reticle pattern.
    • 在曝光方法和装置中,每个曝光单元本身已经知道投影透镜的失真数据。 因此,当形成对准目标层的曝光单元已经知道时,该曝光单元的已知数据用于校正根据多点EGA操作确定的投影倍率和镜头旋转中的至少一个,曝光装置 根据这个修正量调整。 当形成对准目标层的曝光单元是未知的时,从对准标记测量值内的非线性误差的分布状态来指定对准标记曝光单元。 在如此确定的正确的投影放大和拍摄旋转下,拍摄区域被准确地覆盖并暴露于标线图案。