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41. 发明授权

US06862228B2 High reliable reference current generator for MRAM 有权
标题翻译： MRAM的高可靠参考电流发生器
公开(公告)号：US06862228B2
公开(公告)日：2005-03-01
申请号：US10882350
申请日：2004-07-02
申请人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
发明人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
IPC分类号： G11C5/14 , G11C7/14 , G11C11/02 , G11C11/15 , G11C11/56
CPC分类号： G11C5/147 , G11C7/14 , G11C11/15 , G11C11/5607
摘要： The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality of reference elements are used for forming the reference current generator by one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. Thanks to the midpoint current reference signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.
摘要翻译：本发明涉及一种用于磁随机存取存储器的简化参考电流发生器。参考电流发生器位于磁随机存取存储器的存储单元附近，并且施加与存储单元的磁隧道结相同并且承受相同交叉电压的参考元件。多个参考元件用于通过一个或多个位线形成参考电流发生器，并且与存储器单元的电压相同的电压被交叉地连接到参考元件，以便产生多个电流信号 ; 并且使用外围IC电路来产生多个中点参考电流信号并判断数据状态。由于中点电流参考信号，包括2状态存储单元的多状态存储单元可以更精确地读取数据。

42. 发明授权

US07539049B2 Magnetic random access memory and operation method 失效
标题翻译：磁性随机存取存储器及操作方法
公开(公告)号：US07539049B2
公开(公告)日：2009-05-26
申请号：US11946025
申请日：2007-11-27
申请人： Chien-Chung Hung , Ming-Jer Kao , Ding-Yeong Wang , Yuan-Jen Lee
发明人： Chien-Chung Hung , Ming-Jer Kao , Ding-Yeong Wang , Yuan-Jen Lee
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , Y10S977/935
摘要： A magnetic random access memory includes at least a first-direction write current line and multiple second-direction write current line, intersecting with the first-direction write current line in substantial perpendicular and forming several intersecting regions. Multiple magnetic memory cells are respectively located at the intersecting regions for receiving an induced magnetic field in a time sequence. Every at least two adjacent memory cells are in parallel or series connection, to form at least one memory unit. An easy axis of a free layer of each magnetic memory cell is substantially perpendicular to a magnetization of a pinned layer. The easy axis and the first-direction write current line form an including angle of about 45°. A read bit-line circuit connects to a first terminal of the memory unit. A read word-line circuit connects to a second terminal of the memory unit.
摘要翻译：磁性随机存取存储器包括至少第一方向写入电流线和多个第二方向写入电流线，该第一方向写入电流线与第一方向写入电流线相交并且形成若干相交区域。多个磁存储单元分别位于交叉区域，用于以时间顺序接收感应磁场。每个至少两个相邻的存储器单元是并联或串联连接的，以形成至少一个存储单元。每个磁存储单元的自由层的容易轴基本上垂直于被钉扎层的磁化。易轴和第一方向写电流线形成约45°的包含角度。读位线电路连接到存储器单元的第一端。读取字线电路连接到存储器单元的第二端子。

43. 发明授权

US07515458B2 Structure and access method for magnetic memory cell and circuit of magnetic memory 失效
标题翻译：磁存储单元和磁记忆电路的结构和存取方法
公开(公告)号：US07515458B2
公开(公告)日：2009-04-07
申请号：US11465460
申请日：2006-08-18
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Yuan-Jen Lee , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Yuan-Jen Lee , Yung-Hung Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.
摘要翻译：在磁存储器件中使用的磁存储单元包括用作基础结构的一部分的层叠磁性固定层。堆叠的磁性钉扎堆叠层具有顶部被钉扎层和底部被钉扎层，在其之间存在足够大的磁耦合力以保持顶部钉扎层在参考方向上的磁化。隧道势垒层设置在堆叠的磁性钉扎层上。无磁性堆叠层设置在隧道势垒层上。无磁性堆叠层包括具有底部磁化的底部自由层和具有顶部磁化强度的顶部自由层。当没有施加辅助磁场时，底部磁化与顶部磁化反平行并且垂直于顶部被钉扎层上的参考方向。磁偏置层也可以设置在顶部自由层上。

44. 发明申请

US20070223270A1 HIGH WRITE SELECTIVITY AND LOW POWER MAGNETIC RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：高写入选择性和低功率磁性随机存取存储器及其制造方法
公开(公告)号：US20070223270A1
公开(公告)日：2007-09-27
申请号：US11756246
申请日：2007-05-31
申请人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
发明人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
IPC分类号： G11C11/14
CPC分类号： G11C11/14
摘要： A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.
摘要翻译：提供了具有高写入选择性的低功率磁随机存取存储器（MRAM）。写入用磁性材料覆盖的字线和柱写字字线以锯齿形关系布置，解决了具有柱写字线形式的磁RAM中与柱写字字相邻的单元产生的磁干扰问题。根据所公开的结构，每个单元具有较小的位大小和较低的写入电流。这有效地降低了MRAM的功耗。

45. 发明申请

US20070200188A1 Magnetic random access memory with reference magnetic resistance and reading method thereof 审中-公开
标题翻译：具有参考磁阻的磁性随机存取存储器及其读取方法
公开(公告)号：US20070200188A1
公开(公告)日：2007-08-30
申请号：US11797160
申请日：2007-05-01
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/15 , H01L27/228
摘要： A magnetic random access memory having reference magnetic resistance is provided. The memory includes at least one magnetic memory cell having an antiferromagnet layer, a pinned layer formed thereon, a tunnel barrier layer formed thereon, and a free layer formed thereon. The pinned layer and free layer are arranged orthogonally to form a reference magnetic resistance state. Through the provided MRAM structure, the access accuracy is greatly increased and the access speed is accelerated.
摘要翻译：提供具有参考磁阻的磁性随机存取存储器。存储器包括至少一个具有反铁磁体层，形成在其上的被钉扎层，形成在其上的隧道势垒层和形成在其上的自由层的磁存储单元。钉扎层和自由层正交布置以形成参考磁阻状态。通过提供的MRAM结构，访问精度大大提高，访问速度加快。

46. 发明申请

US20070030727A1 Method for switching magnetic moment in magnetoresistive random access memory with low current 有权
标题翻译：低电流磁阻随机存取存储器中磁矩切换的方法
公开(公告)号：US20070030727A1
公开(公告)日：2007-02-08
申请号：US11338653
申请日：2006-01-25
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译：用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场，第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

47. 发明申请

US20060102971A1 Magnetic random access memory with lower switching field 失效
标题翻译：具有较低开关电场的磁性随机存取存储器
公开(公告)号：US20060102971A1
公开(公告)日：2006-05-18
申请号：US11159137
申请日：2005-06-23
申请人： Yuan-Jen Lee , Yung-Hsiang Chen , Wei-Chuan Chen , Ming-Jer Kao , Lien-Chang Wang
发明人： Yuan-Jen Lee , Yung-Hsiang Chen , Wei-Chuan Chen , Ming-Jer Kao , Lien-Chang Wang
IPC分类号： H01L43/00 , H01L29/82 , G11C11/22
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.
摘要翻译：提供具有较低开关电场的磁性随机存取存储器。存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。

48. 发明授权

US07023726B1 Hybrid magnetoresistive random access memory (MRAM) architecture 失效
标题翻译：混合磁阻随机存取存储器（MRAM）架构
公开(公告)号：US07023726B1
公开(公告)日：2006-04-04
申请号：US11038107
申请日：2005-01-21
申请人： Kuo-Lung Chen , Ming-Jer Kao , Ming-Jin Tsai
发明人： Kuo-Lung Chen , Ming-Jer Kao , Ming-Jin Tsai
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： The present invention relates to a hybrid MRAM architecture, and more particularly to a hybrid MRAM architecture capable of being used with an MCU and an MPU. This hybrid MRAM architecture is adapted to a controlling device for accessing a bit of information, comprising a plurality of first MRAM arrays (1T1MTJ architecture), a plurality of second MRAM arrays (XPC architecture), an address line, an access decoder, a sensing and writing circuit, and at least one I/O bus. The access decoder accesses to the bit of information from either the first or the second MRAM arrays selected in accordance with an address signal from the controlling device. The sensing and writing circuit amplifies the bit of information and transmits it to the controlling device via the at least one I/O bus. Accordingly, the access of the bit of information is completed.
摘要翻译：混合MRAM架构技术领域本发明涉及混合MRAM架构，更具体地涉及能够与MCU和MPU一起使用的混合MRAM架构。该混合MRAM架构适用于访问一比特信息的控制设备，包括多个第一MRAM阵列（1T1MTJ架构），多个第二MRAM阵列（XPC架构），地址线，接入解码器，感测和写入电路，以及至少一个I / O总线。接入解码器根据来自控制设备的地址信号选择的第一或第二MRAM阵列访问信息比特。感测和写入电路放大信息比特，并通过至少一个I / O总线将其发送到控制设备。因此，信息位的访问完成。

49. 发明授权

US06757189B2 Magnetic random access memory with memory cells of different resistances connected in series and parallel 有权
标题翻译：磁性随机存取存储器，具有串联和并联连接的不同电阻的存储单元
公开(公告)号：US06757189B2
公开(公告)日：2004-06-29
申请号：US10421893
申请日：2003-04-24
申请人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan
发明人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan
IPC分类号： G11C1115
CPC分类号： G11C11/16 , G11C11/5607
摘要： High density magnetic random access memory (MRAM) is disclosed. In the MRAM, by using the multi-layered magnetic materials with different resistance characteristics, the magnetic tunnel junction (MTJ) cells are connected in parallel or in series, which are connected to a transistor, so as to be a control element for reading data without complicated reading procedure and timing, resulting in high density package of MRAM.
摘要翻译：公开了高密度磁随机存取存储器（MRAM）。在MRAM中，通过使用具有不同电阻特性的多层磁性材料，磁性隧道结（MTJ）单元并联或串联连接，连接到晶体管，以便作为读取数据的控制元件没有复杂的读取程序和时序，导致MRAM的高密度封装。

50. 发明授权

US06642595B1 Magnetic random access memory with low writing current 失效
标题翻译：具有低写入电流的磁性随机存取存储器
公开(公告)号：US06642595B1
公开(公告)日：2003-11-04
申请号：US10233524
申请日：2002-09-04
申请人： Chien-Chung Hung , Ming-Jer Kao
发明人： Chien-Chung Hung , Ming-Jer Kao
IPC分类号： H01L2982
CPC分类号： B82Y10/00 , G11C11/15 , H01L27/222
摘要： A magnetic random access memory (MRAM) with a low write current, characterized in that an improved MRAM structure is composed of a plurality of conductive metal pillars disposed on both sides of a magnetic tunnel junction (MTJ) cell functioning as a memory cell. The conductive metal pillars generate a superposed magnetic field so as to reduce the write current into the MTJ cell, thereby reducing the power consumption during the operation of an MRAM. The metal pillars are formed by employing a modified mask so that a plurality of plugs are formed by via etching and metal deposition. Moreover, at least one turn of conductive metal coil is disposed near the memory cell. The enhanced magnetic field thus generated results in a lowered write current as well as reduced power consumption.
摘要翻译：具有低写入电流的磁性随机存取存储器（MRAM），其特征在于，改进的MRAM结构由设置在用作存储单元的磁性隧道结（MTJ）单元两侧的多个导电金属柱组成。导电金属柱产生叠加磁场，以便减少进入MTJ单元的写入电流，从而降低MRAM操作期间的功耗。通过采用改进的掩模形成金属柱，从而通过通孔蚀刻和金属沉积形成多个塞子。此外，在存储单元附近设置至少一匝导电金属线圈。由此产生的增强的磁场导致写入电流降低以及降低的功耗。

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