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1. 发明授权

US07359237B2 High write selectivity and low power magnetic random access memory and method for fabricating the same 失效
标题翻译：高写选择性和低功率磁随机存取存储器及其制造方法
公开(公告)号：US07359237B2
公开(公告)日：2008-04-15
申请号：US10846663
申请日：2004-05-17
申请人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
发明人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
IPC分类号： G11C11/15
CPC分类号： G11C11/14
摘要： A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.
摘要翻译：提供了具有高写入选择性的低功率磁随机存取存储器（MRAM）。写入用磁性材料覆盖的字线和柱写字字线以锯齿形关系布置，解决了具有柱写字线形式的磁RAM中与柱写字字相邻的单元产生的磁干扰问题。根据所公开的结构，每个单元具有较小的位大小和较低的写入电流。这有效地降低了MRAM的功耗。

2. 发明申请

US20050135149A1 High write selectivity and low power magnetic random access memory and method for fabricating the same 失效
标题翻译：高写选择性和低功率磁随机存取存储器及其制造方法
公开(公告)号：US20050135149A1
公开(公告)日：2005-06-23
申请号：US10846663
申请日：2004-05-17
申请人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
发明人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
IPC分类号： G11C11/14 , G11C11/16
CPC分类号： G11C11/14
摘要： A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.
摘要翻译：提供了具有高写入选择性的低功率磁随机存取存储器（MRAM）。写入用磁性材料覆盖的字线和柱写字字线以锯齿形关系布置，解决了具有柱写字线形式的磁RAM中与柱写字字相邻的单元产生的磁干扰问题。根据所公开的结构，每个单元具有较小的位大小和较低的写入电流。这有效地降低了MRAM的功耗。

3. 发明申请

US20070223270A1 HIGH WRITE SELECTIVITY AND LOW POWER MAGNETIC RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：高写入选择性和低功率磁性随机存取存储器及其制造方法
公开(公告)号：US20070223270A1
公开(公告)日：2007-09-27
申请号：US11756246
申请日：2007-05-31
申请人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
发明人： Chien-Chung Hung , Ming-Jer Kao , Yung-Hsiang Chen , Shu-En Li
IPC分类号： G11C11/14
CPC分类号： G11C11/14
摘要： A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.
摘要翻译：提供了具有高写入选择性的低功率磁随机存取存储器（MRAM）。写入用磁性材料覆盖的字线和柱写字字线以锯齿形关系布置，解决了具有柱写字线形式的磁RAM中与柱写字字相邻的单元产生的磁干扰问题。根据所公开的结构，每个单元具有较小的位大小和较低的写入电流。这有效地降低了MRAM的功耗。

4. 发明申请

US20070242501A1 STRUCTURE AND ACCESS METHOD FOR MAGNETIC MEMORY CELL AND CIRCUIT OF MAGNETIC MEMORY 失效
标题翻译：磁记忆体和磁记忆电路的结构和访问方法
公开(公告)号：US20070242501A1
公开(公告)日：2007-10-18
申请号：US11465460
申请日：2006-08-18
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Yuan-Jen Lee , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Yuan-Jen Lee , Yung-Hung Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.
摘要翻译：在磁存储器件中使用的磁存储单元包括用作基础结构的一部分的层叠磁性固定层。堆叠的磁性钉扎堆叠层具有顶部被钉扎层和底部被钉扎层，在其之间存在足够大的磁耦合力以保持顶部钉扎层在参考方向上的磁化。隧道势垒层设置在堆叠的磁性钉扎层上。无磁性堆叠层设置在隧道势垒层上。无磁性堆叠层包括具有底部磁化的底部自由层和具有顶部磁化强度的顶部自由层。当没有施加辅助磁场时，底部磁化与顶部磁化反平行并且垂直于顶部被钉扎层上的参考方向。磁偏置层也可以设置在顶部自由层上。

5. 发明申请

US20060113619A1 Magnetic random access memory with reference magnetic resistance and reading method thereof 审中-公开
标题翻译：具有参考磁阻的磁性随机存取存储器及其读取方法
公开(公告)号：US20060113619A1
公开(公告)日：2006-06-01
申请号：US11224082
申请日：2005-09-13
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/15 , H01L27/228
摘要： A magnetic random access memory having reference magnetic resistance is provided. The memory includes at least one magnetic memory cell having an antiferromagnet layer, a pinned layer formed thereon, a tunnel barrier layer formed thereon, and a free layer formed thereon. The pinned layer and free layer are arranged orthogonally to form a reference magnetic resistance state. Through the provided MRAM structure, the access accuracy is greatly increased and the access speed is accelerated.
摘要翻译：提供具有参考磁阻的磁性随机存取存储器。存储器包括至少一个具有反铁磁体层，形成在其上的被钉扎层，形成在其上的隧道势垒层和形成在其上的自由层的磁存储单元。钉扎层和自由层正交布置以形成参考磁阻状态。通过提供的MRAM结构，访问精度大大提高，访问速度加快。

6. 发明授权

US06791887B2 High reliable reference current generator for MRAM 有权
标题翻译： MRAM的高可靠参考电流发生器
公开(公告)号：US06791887B2
公开(公告)日：2004-09-14
申请号：US10653992
申请日：2003-09-04
申请人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
发明人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
IPC分类号： G11C714
CPC分类号： G11C5/147 , G11C7/14 , G11C11/15 , G11C11/5607
摘要： The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality of reference elements are used for forming the reference current generator by using one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. Thanks to the midpoint reference current signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.
摘要翻译：本发明涉及一种用于磁随机存取存储器的简化参考电流发生器。参考电流发生器位于磁随机存取存储器的存储单元附近，并且施加与存储单元的磁隧道结相同并且承受相同交叉电压的参考元件。多个参考元件用于通过使用一个或几个位线形成参考电流发生器，并且与存储器单元的电压相同的电压被交叉地连接到参考元件，以便产生多个电流信号; 并且使用外围IC电路来产生多个中点参考电流信号并判断数据状态。由于中点参考电流信号，包括2状态存储单元的多状态存储单元可以更精确地读取数据。

7. 发明授权

US06862228B2 High reliable reference current generator for MRAM 有权
标题翻译： MRAM的高可靠参考电流发生器
公开(公告)号：US06862228B2
公开(公告)日：2005-03-01
申请号：US10882350
申请日：2004-07-02
申请人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
发明人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
IPC分类号： G11C5/14 , G11C7/14 , G11C11/02 , G11C11/15 , G11C11/56
CPC分类号： G11C5/147 , G11C7/14 , G11C11/15 , G11C11/5607
摘要： The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality of reference elements are used for forming the reference current generator by one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. Thanks to the midpoint current reference signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.
摘要翻译：本发明涉及一种用于磁随机存取存储器的简化参考电流发生器。参考电流发生器位于磁随机存取存储器的存储单元附近，并且施加与存储单元的磁隧道结相同并且承受相同交叉电压的参考元件。多个参考元件用于通过一个或多个位线形成参考电流发生器，并且与存储器单元的电压相同的电压被交叉地连接到参考元件，以便产生多个电流信号 ; 并且使用外围IC电路来产生多个中点参考电流信号并判断数据状态。由于中点电流参考信号，包括2状态存储单元的多状态存储单元可以更精确地读取数据。

8. 发明授权

US07515458B2 Structure and access method for magnetic memory cell and circuit of magnetic memory 失效
标题翻译：磁存储单元和磁记忆电路的结构和存取方法
公开(公告)号：US07515458B2
公开(公告)日：2009-04-07
申请号：US11465460
申请日：2006-08-18
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Yuan-Jen Lee , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Yuan-Jen Lee , Yung-Hung Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.
摘要翻译：在磁存储器件中使用的磁存储单元包括用作基础结构的一部分的层叠磁性固定层。堆叠的磁性钉扎堆叠层具有顶部被钉扎层和底部被钉扎层，在其之间存在足够大的磁耦合力以保持顶部钉扎层在参考方向上的磁化。隧道势垒层设置在堆叠的磁性钉扎层上。无磁性堆叠层设置在隧道势垒层上。无磁性堆叠层包括具有底部磁化的底部自由层和具有顶部磁化强度的顶部自由层。当没有施加辅助磁场时，底部磁化与顶部磁化反平行并且垂直于顶部被钉扎层上的参考方向。磁偏置层也可以设置在顶部自由层上。

9. 发明申请

US20070200188A1 Magnetic random access memory with reference magnetic resistance and reading method thereof 审中-公开
标题翻译：具有参考磁阻的磁性随机存取存储器及其读取方法
公开(公告)号：US20070200188A1
公开(公告)日：2007-08-30
申请号：US11797160
申请日：2007-05-01
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/15 , H01L27/228
摘要： A magnetic random access memory having reference magnetic resistance is provided. The memory includes at least one magnetic memory cell having an antiferromagnet layer, a pinned layer formed thereon, a tunnel barrier layer formed thereon, and a free layer formed thereon. The pinned layer and free layer are arranged orthogonally to form a reference magnetic resistance state. Through the provided MRAM structure, the access accuracy is greatly increased and the access speed is accelerated.
摘要翻译：提供具有参考磁阻的磁性随机存取存储器。存储器包括至少一个具有反铁磁体层，形成在其上的被钉扎层，形成在其上的隧道势垒层和形成在其上的自由层的磁存储单元。钉扎层和自由层正交布置以形成参考磁阻状态。通过提供的MRAM结构，访问精度大大提高，访问速度加快。

10. 发明申请

US20090003043A1 Method for switching magnetic moment in magnetoresistive random access memory with low current 有权
标题翻译：低电流磁阻随机存取存储器中磁矩切换的方法
公开(公告)号：US20090003043A1
公开(公告)日：2009-01-01
申请号：US12219247
申请日：2008-07-18
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/02 , G11C7/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译：用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场，第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

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