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1. 发明授权

US06791887B2 High reliable reference current generator for MRAM 有权
标题翻译： MRAM的高可靠参考电流发生器
公开(公告)号：US06791887B2
公开(公告)日：2004-09-14
申请号：US10653992
申请日：2003-09-04
申请人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
发明人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
IPC分类号： G11C714
CPC分类号： G11C5/147 , G11C7/14 , G11C11/15 , G11C11/5607
摘要： The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality of reference elements are used for forming the reference current generator by using one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. Thanks to the midpoint reference current signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.
摘要翻译：本发明涉及一种用于磁随机存取存储器的简化参考电流发生器。参考电流发生器位于磁随机存取存储器的存储单元附近，并且施加与存储单元的磁隧道结相同并且承受相同交叉电压的参考元件。多个参考元件用于通过使用一个或几个位线形成参考电流发生器，并且与存储器单元的电压相同的电压被交叉地连接到参考元件，以便产生多个电流信号; 并且使用外围IC电路来产生多个中点参考电流信号并判断数据状态。由于中点参考电流信号，包括2状态存储单元的多状态存储单元可以更精确地读取数据。

2. 发明授权

US06862228B2 High reliable reference current generator for MRAM 有权
标题翻译： MRAM的高可靠参考电流发生器
公开(公告)号：US06862228B2
公开(公告)日：2005-03-01
申请号：US10882350
申请日：2004-07-02
申请人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
发明人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan , Yung-Hsiang Chen
IPC分类号： G11C5/14 , G11C7/14 , G11C11/02 , G11C11/15 , G11C11/56
CPC分类号： G11C5/147 , G11C7/14 , G11C11/15 , G11C11/5607
摘要： The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality of reference elements are used for forming the reference current generator by one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. Thanks to the midpoint current reference signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.
摘要翻译：本发明涉及一种用于磁随机存取存储器的简化参考电流发生器。参考电流发生器位于磁随机存取存储器的存储单元附近，并且施加与存储单元的磁隧道结相同并且承受相同交叉电压的参考元件。多个参考元件用于通过一个或多个位线形成参考电流发生器，并且与存储器单元的电压相同的电压被交叉地连接到参考元件，以便产生多个电流信号 ; 并且使用外围IC电路来产生多个中点参考电流信号并判断数据状态。由于中点电流参考信号，包括2状态存储单元的多状态存储单元可以更精确地读取数据。

3. 发明授权

US06757189B2 Magnetic random access memory with memory cells of different resistances connected in series and parallel 有权
标题翻译：磁性随机存取存储器，具有串联和并联连接的不同电阻的存储单元
公开(公告)号：US06757189B2
公开(公告)日：2004-06-29
申请号：US10421893
申请日：2003-04-24
申请人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan
发明人： Chien-Chung Hung , Ming-Jer Kao , Tsung-Ming Pan
IPC分类号： G11C1115
CPC分类号： G11C11/16 , G11C11/5607
摘要： High density magnetic random access memory (MRAM) is disclosed. In the MRAM, by using the multi-layered magnetic materials with different resistance characteristics, the magnetic tunnel junction (MTJ) cells are connected in parallel or in series, which are connected to a transistor, so as to be a control element for reading data without complicated reading procedure and timing, resulting in high density package of MRAM.
摘要翻译：公开了高密度磁随机存取存储器（MRAM）。在MRAM中，通过使用具有不同电阻特性的多层磁性材料，磁性隧道结（MTJ）单元并联或串联连接，连接到晶体管，以便作为读取数据的控制元件没有复杂的读取程序和时序，导致MRAM的高密度封装。

4. 发明授权

US07033892B2 Trench power MOSFET in silicon carbide and method of making the same 失效
标题翻译：沟槽功率MOSFET在碳化硅及其制作方法
公开(公告)号：US07033892B2
公开(公告)日：2006-04-25
申请号：US10952848
申请日：2004-09-30
申请人： Chih-Wei Hsu , Yung-Chung Lee , Tsung-Ming Pan , Yen Chuo
发明人： Chih-Wei Hsu , Yung-Chung Lee , Tsung-Ming Pan , Yen Chuo
IPC分类号： H01L21/336
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/7827 , H01L29/7828
摘要： A structure of accumulated type trench MOSFET in silicon carbide(SiC) and forming method are disclosed. The MOSFET includes a trench gate having a gate oxide layer, a polysilicon layer, a source region, and a drain region. The source region contains a p+ heavily doped region, an n+ heavily doped region and a p-base region, and a source contact metal layer. The p+ heavily doped region the n+ heavily doped region and the p-base region are abutting each other. The former two are extended to the front surface of the silicon carbide substrate having the source contact metal layer formed over and the latter one is beneath them. Moreover, the p-base region is separated from the trench by an accumulation channel. The drain contact metal layer is formed on the rear surface of the silicon carbide substrate where the rear region of the silicon carbide is heavily doped than the front region thereof.
摘要翻译：公开了碳化硅（SiC）中的累积型沟槽MOSFET的结构和形成方法。 MOSFET包括具有栅极氧化层，多晶硅层，源极区和漏极区的沟槽栅极。源区包含p +重掺杂区，n +重掺杂区和p基区，以及源极接触金属层。 p +重掺杂区域，n +重掺杂区域和p基区域彼此邻接。前者两者延伸到碳化硅衬底的前表面，其具有形成在其上的源极接触金属层，而后者位于它们之下。此外，p基区通过积累通道与沟槽分离。漏极接触金属层形成在碳化硅衬底的后表面上，其中碳化硅的后部区域比其前部区域重掺杂。

5. 发明授权

US5835367A Distributed plannar-type high voltage transformer 失效
标题翻译：分布式扁平型高压变压器
公开(公告)号：US5835367A
公开(公告)日：1998-11-10
申请号：US9178
申请日：1998-01-20
申请人： Tsung-Ming Pan , Hui-Pin Yang
发明人： Tsung-Ming Pan , Hui-Pin Yang
IPC分类号： H01F27/42 , H01F30/06 , H02M3/28 , H02M3/18 , H01F27/30
CPC分类号： H02M3/28 , H01F27/42 , H01F30/06
摘要： Voltage transforming apparatus for receiving a system input voltage and then generating a system output voltage is disclosed herein, the voltage transforming apparatus including the following devices: Planar voltage transforming device, which is used to generate a module output voltage responding to the rate of change of the magnetic flux. The magnetic flux is induced by the system input voltage. The planar voltage transforming device including a first terminal having a first voltage and a second terminal having a second voltage. The first voltage is higher than the second voltage, and the output voltage of the planar voltage transforming device is responding to the difference between the first voltage and the second voltage. Coupling device for electrically coupling the planar voltage transforming device. In addition, the summation of the output voltage of the planar voltage transforming device is equal to the system output voltage.
摘要翻译：本文公开了用于接收系统输入电压然后产生系统输出电压的电压变换装置，电压变换装置包括以下装置：平面电压变换装置，其用于响应于变化率而产生模块输出电压磁通量。磁通量由系统输入电压引起。平面电压变换装置包括具有第一电压的第一端子和具有第二电压的第二端子。第一电压高于第二电压，并且平面电压转换装置的输出电压响应于第一电压和第二电压之间的差。用于电耦合平面电压转换装置的耦合装置。此外，平面电压变换装置的输出电压的总和等于系统输出电压。

6. 发明申请

US20050266623A1 Trench power MOSFET in silicon carbide and method of making the same 失效
标题翻译：沟槽功率MOSFET在碳化硅及其制作方法
公开(公告)号：US20050266623A1
公开(公告)日：2005-12-01
申请号：US10952848
申请日：2004-09-30
申请人： Chih-Wei Hsu , Yung-Chung Lee , Tsung-Ming Pan , Yen Chuo
发明人： Chih-Wei Hsu , Yung-Chung Lee , Tsung-Ming Pan , Yen Chuo
IPC分类号： H01L21/04 , H01L21/331 , H01L29/24 , H01L29/76 , H01L29/772 , H01L29/78
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/7827 , H01L29/7828
摘要： A structure of accumulated type trench MOSFET in silicon carbide(SiC) and forming method are disclosed. The MOSFET includes a trench gate having a gate oxide layer, a polysilicon layer, a source region, and a drain region. The source region contains a p+ heavily doped region, an n+ heavily doped region and a p-base region, and a source contact metal layer. The p+ heavily doped region the n+ heavily doped region and the p-base region are abutting each other. The former two are extended to the front surface of the silicon carbide substrate having the source contact metal layer formed over and the latter one is beneath them. Moreover, the p-base region is separated from the trench by an accumulation channel. The drain contact metal layer is formed on the rear surface of the silicon carbide substrate where the rear region of the silicon carbide is heavily doped than the front region thereof.
摘要翻译：公开了碳化硅（SiC）中的累积型沟槽MOSFET的结构和形成方法。 MOSFET包括具有栅极氧化层，多晶硅层，源极区和漏极区的沟槽栅极。源区包含p +重掺杂区，n +重掺杂区和p基区，以及源极接触金属层。 p +重掺杂区域，n +重掺杂区域和p基区域彼此邻接。前者两者延伸到碳化硅衬底的前表面，其具有形成在其上的源极接触金属层，而后者位于它们之下。此外，p基区通过积累通道与沟槽分离。漏极接触金属层形成在碳化硅衬底的后表面上，其中碳化硅的后部区域比其前部区域重掺杂。

7. 发明授权

US6009007A Pulse-density-modulated controller with dynamic sequence 失效
标题翻译：具有动态序列的脉冲密度调制控制器
公开(公告)号：US6009007A
公开(公告)日：1999-12-28
申请号：US22495
申请日：1998-02-12
申请人： Tsung-Ming Pan
发明人： Tsung-Ming Pan
IPC分类号： H02M7/5387 , H02M7/44
CPC分类号： H02M7/53871
摘要： Apparatus for controlling pulse density is disclosed herein. The aforementioned apparatus including the following devices: A comparator that is used to compare an input reference voltage and a feedback voltage signal. A math processing device that is used to add the difference between the feedback voltage signal and an analog duty command signal to the analog duty command signal. A shift register that is used to generate a shift timing signal. A weighted averaging device that is used to carry out the operation of the weighted averaging of the feedback voltage signal according to the shift timing signal. A sequential switching device that is used to generate a switch-timing control signal by decoding the feedback voltage signal. A rectifying device that is used to output power with zero-current-switching. The rectifying means is driven by the switch-timing control signal.
摘要翻译：本文公开了用于控制脉冲密度的装置。上述装置包括以下装置：用于比较输入参考电压和反馈电压信号的比较器。一种数学处理装置，用于将反馈电压信号和模拟占空指令信号之间的差异加到模拟占空指令信号上。用于产生移位定时信号的移位寄存器。一种加权平均装置，用于根据移位定时信号执行反馈电压信号的加权平均的操作。一种顺序切换装置，用于通过解码反馈电压信号来产生开关定时控制信号。用于通过零电流切换输出功率的整流装置。整流装置由开关定时控制信号驱动。

8. 发明授权

US5905373A Serial-modulized high voltage transformer 失效
标题翻译：串联式高压变压器
公开(公告)号：US5905373A
公开(公告)日：1999-05-18
申请号：US4734
申请日：1998-01-09
申请人： Tsung-Ming Pan , Jang-Tzeng Lin
发明人： Tsung-Ming Pan , Jang-Tzeng Lin
IPC分类号： H01F30/06 , H01F30/12
CPC分类号： H01F30/06
摘要： A voltage transforming apparatus for receiving a system input voltage and generating a system output voltage is disclosed herein. The voltage transforming apparatus includes the following devices. Transforming device that is to generate module output voltage responsive to the rate of change of the magnetic flux induced by the system input voltage. The voltage transforming device including a first terminal having a first voltage and a second terminal having a second voltage. The first voltage is higher than the second voltage, and the output voltage of the voltage transforming device is generated responsive to the difference between the first voltage and the second voltage. The voltage transforming device is mechanically connected to prevent the movement. Coupling device for electrically coupling the voltage transforming device to form a serial connected voltage transforming device. The serial connected voltage transforming device including a top voltage transforming device and a bottom voltage transforming device. The difference of the voltage level of the first terminal of the top voltage transforming device and the second terminal of the bottom voltage transforming device is equal to the system output voltage. In the serial connected voltage transforming device, the first terminal of one voltage transforming device is connected to the second terminal of the other voltage transforming device.
摘要翻译：本文公开了一种用于接收系统输入电压并产生系统输出电压的电压变换装置。电压变换装置包括以下装置。转换装置，用于根据系统输入电压引起的磁通量的变化率产生模块输出电压。电压变换装置包括具有第一电压的第一端子和具有第二电压的第二端子。第一电压高于第二电压，并且响应于第一电压和第二电压之间的差异而产生电压变换装置的输出电压。电压变换装置机械连接以防止运动。用于电耦合电压变换装置以形成串联连接的电压转换装置的耦合装置。该串联电压变换装置包括顶部电压变换装置和底部电压转换装置。顶部电压变换装置的第一端子和底部电压变换装置的第二端子的电压电平的差等于系统输出电压。在串联电压变换装置中，一个电压变换装置的第一端子与另一个电压变换装置的第二端子连接。

9. 发明授权

US5847947A High voltage transformer 失效
标题翻译：高压变压器
公开(公告)号：US5847947A
公开(公告)日：1998-12-08
申请号：US15321
申请日：1998-01-29
申请人： Tsung-Ming Pan , Jang-Tzeng Lin , Hui Pin Yang
发明人： Tsung-Ming Pan , Jang-Tzeng Lin , Hui Pin Yang
IPC分类号： H01F27/28 , H02M3/18 , H01F27/30
CPC分类号： H01F27/2804
摘要： The structure of a high voltage transformer is disclosed. The transformer structure has a magnetic core, a multi-layer printed circuit board (PCB), a conductor winding, a voltage doubling rectifier means, a magnetic means, a supporting means, and insulated oil. The multi-layer PCB has spiral coils used as a secondary winding. A conductor windings is used as a primary winding. The voltage doubling rectifier means includes an anode voltage doubling rectifier circuit and a cathode voltage doubling rectifier circuit which are respectively formed on a first and a second insulated boards. The two voltage doubling rectifier is used to increase the voltage gain. The magnetic means has a top magnetic cap and a bottom magnetic cap. The mullet-layer PCB and the voltage doubling rectifier means are interposed between the top and the bottom magnetic cap for decreasing the leakage magnetic flux. The breakdown distance can be maintained in an appropriate distance by using the supporting means. The insulated oil serving as an insulated material is filled into the transformer structure to increase the durability of breakdown voltage.
摘要翻译：公开了一种高压变压器的结构。变压器结构具有磁芯，多层印刷电路板（PCB），导体绕组，倍压整流装置，磁性装置，支撑装置和绝缘油。多层PCB具有用作次级绕组的螺旋线圈。导体绕组用作初级绕组。倍压整流装置包括分别形成在第一和第二绝缘板上的阳极倍压整流电路和阴极倍压整流电路。两个倍压整流器用于增加电压增益。磁性装置具有顶部磁性盖和底部磁性盖。 m鱼层PCB和倍压整流装置插入在顶部和底部磁性盖之间以减小泄漏磁通量。可以通过使用支撑装置将击穿距离保持在适当的距离。用作绝缘材料的绝缘油被填充到变压器结构中以增加击穿电压的耐久性。

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