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1. 发明授权

US07023726B1 Hybrid magnetoresistive random access memory (MRAM) architecture 失效
标题翻译：混合磁阻随机存取存储器（MRAM）架构
公开(公告)号：US07023726B1
公开(公告)日：2006-04-04
申请号：US11038107
申请日：2005-01-21
申请人： Kuo-Lung Chen , Ming-Jer Kao , Ming-Jin Tsai
发明人： Kuo-Lung Chen , Ming-Jer Kao , Ming-Jin Tsai
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： The present invention relates to a hybrid MRAM architecture, and more particularly to a hybrid MRAM architecture capable of being used with an MCU and an MPU. This hybrid MRAM architecture is adapted to a controlling device for accessing a bit of information, comprising a plurality of first MRAM arrays (1T1MTJ architecture), a plurality of second MRAM arrays (XPC architecture), an address line, an access decoder, a sensing and writing circuit, and at least one I/O bus. The access decoder accesses to the bit of information from either the first or the second MRAM arrays selected in accordance with an address signal from the controlling device. The sensing and writing circuit amplifies the bit of information and transmits it to the controlling device via the at least one I/O bus. Accordingly, the access of the bit of information is completed.
摘要翻译：混合MRAM架构技术领域本发明涉及混合MRAM架构，更具体地涉及能够与MCU和MPU一起使用的混合MRAM架构。该混合MRAM架构适用于访问一比特信息的控制设备，包括多个第一MRAM阵列（1T1MTJ架构），多个第二MRAM阵列（XPC架构），地址线，接入解码器，感测和写入电路，以及至少一个I / O总线。接入解码器根据来自控制设备的地址信号选择的第一或第二MRAM阵列访问信息比特。感测和写入电路放大信息比特，并通过至少一个I / O总线将其发送到控制设备。因此，信息位的访问完成。

2. 发明申请

US20060113619A1 Magnetic random access memory with reference magnetic resistance and reading method thereof 审中-公开
标题翻译：具有参考磁阻的磁性随机存取存储器及其读取方法
公开(公告)号：US20060113619A1
公开(公告)日：2006-06-01
申请号：US11224082
申请日：2005-09-13
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/15 , H01L27/228
摘要： A magnetic random access memory having reference magnetic resistance is provided. The memory includes at least one magnetic memory cell having an antiferromagnet layer, a pinned layer formed thereon, a tunnel barrier layer formed thereon, and a free layer formed thereon. The pinned layer and free layer are arranged orthogonally to form a reference magnetic resistance state. Through the provided MRAM structure, the access accuracy is greatly increased and the access speed is accelerated.
摘要翻译：提供具有参考磁阻的磁性随机存取存储器。存储器包括至少一个具有反铁磁体层，形成在其上的被钉扎层，形成在其上的隧道势垒层和形成在其上的自由层的磁存储单元。钉扎层和自由层正交布置以形成参考磁阻状态。通过提供的MRAM结构，访问精度大大提高，访问速度加快。

3. 发明申请

US20070200188A1 Magnetic random access memory with reference magnetic resistance and reading method thereof 审中-公开
标题翻译：具有参考磁阻的磁性随机存取存储器及其读取方法
公开(公告)号：US20070200188A1
公开(公告)日：2007-08-30
申请号：US11797160
申请日：2007-05-01
申请人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
发明人： Chien-Chung Hung , Yung-Hsiang Chen , Ming-Jer Kao , Kuo-Lung Chen , Lien-Chang Wang , Yung-Hung Wang
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , G11C11/15 , H01L27/228
摘要： A magnetic random access memory having reference magnetic resistance is provided. The memory includes at least one magnetic memory cell having an antiferromagnet layer, a pinned layer formed thereon, a tunnel barrier layer formed thereon, and a free layer formed thereon. The pinned layer and free layer are arranged orthogonally to form a reference magnetic resistance state. Through the provided MRAM structure, the access accuracy is greatly increased and the access speed is accelerated.
摘要翻译：提供具有参考磁阻的磁性随机存取存储器。存储器包括至少一个具有反铁磁体层，形成在其上的被钉扎层，形成在其上的隧道势垒层和形成在其上的自由层的磁存储单元。钉扎层和自由层正交布置以形成参考磁阻状态。通过提供的MRAM结构，访问精度大大提高，访问速度加快。

4. 发明授权

US07800937B2 Method for switching magnetic moment in magnetoresistive random access memory with low current 有权
标题翻译：低电流磁阻随机存取存储器中磁矩切换的方法
公开(公告)号：US07800937B2
公开(公告)日：2010-09-21
申请号：US12219247
申请日：2008-07-18
申请人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
发明人： Chien-Chung Hung , Ming-Jer Kao , Yuan-Jen Lee , Lien-Chang Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/1693 , G11C11/1673 , G11C11/1675
摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
摘要翻译：用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场，第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

5. 发明授权

US07463510B2 High-bandwidth magnetoresistive random access memory devices 有权
标题翻译：高带宽磁阻随机存取存储器件
公开(公告)号：US07463510B2
公开(公告)日：2008-12-09
申请号：US11707100
申请日：2007-02-16
申请人： Chien-Chung Hung , Yuan-Jen Lee , Ming-Jer Kao
发明人： Chien-Chung Hung , Yuan-Jen Lee , Ming-Jer Kao
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C8/04 , G11C11/5607 , G11C19/00
摘要： A magnetoresistive random access memory (MRAM) device includes a memory cell corresponding to one read bit line, one read word line, one write word line, and two or more write bit lines. The memory cell includes a first memory unit and a second memory unit each corresponding to a respective write bit line. Each of the first and second memory units comprises: a free magnetic region having a first easy axis, a pinned magnetic region having a second easy axis, and a tunneling barrier between the free magnetic region and the pinned magnetic region.
摘要翻译：磁阻随机存取存储器（MRAM）装置包括对应于一个读位线，一个读字线，一个写字线和两个或多个写位线的存储单元。存储单元包括第一存储器单元和第二存储器单元，每个存储单元与相应的写入位线对应。第一和第二存储器单元中的每一个包括：具有第一容易轴的自由磁区，具有第二容易轴的钉扎磁区和自由磁区与固定磁区之间的隧穿势垒。

6. 发明申请

US20070201266A1 High-bandwidth magnetoresistive random access memory devices 有权
标题翻译：高带宽磁阻随机存取存储器件
公开(公告)号：US20070201266A1
公开(公告)日：2007-08-30
申请号：US11707100
申请日：2007-02-16
申请人： Chien-Chung Hung , Yuan-Jen Lee , Ming-Jer Kao
发明人： Chien-Chung Hung , Yuan-Jen Lee , Ming-Jer Kao
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C8/04 , G11C11/5607 , G11C19/00
摘要： A magnetoresistive random access memory (MRAM) device includes a memory cell corresponding to one read bit line, one read word line, one write word line, and two or more write bit lines. The memory cell includes a first memory unit and a second memory unit each corresponding to a respective write bit line. Each of the first and second memory units comprises: a free magnetic region having a first easy axis, a pinned magnetic region having a second easy axis, and a tunneling barrier between the free magnetic region and the pinned magnetic region.
摘要翻译：磁阻随机存取存储器（MRAM）装置包括对应于一个读位线，一个读字线，一个写字线和两个或多个写位线的存储单元。存储单元包括第一存储器单元和第二存储器单元，每个存储单元与相应的写入位线对应。第一和第二存储器单元中的每一个包括：具有第一容易轴的自由磁区，具有第二容易轴的钉扎磁区和自由磁区与固定磁区之间的隧穿势垒。

7. 发明申请

US20070056855A1 Method of making an electroplated interconnection wire of a composite of metal and carbon nanotubes 有权
标题翻译：制造金属和碳纳米管复合材料的电镀互连线的方法
公开(公告)号：US20070056855A1
公开(公告)日：2007-03-15
申请号：US11298523
申请日：2005-12-12
申请人： Po-Yuan Lo , Jung-Hua Wei , Bae-Horng Chen , Jih-Shun Chiang , Chian-Liang Hwang , Ming-Jer Kao
发明人： Po-Yuan Lo , Jung-Hua Wei , Bae-Horng Chen , Jih-Shun Chiang , Chian-Liang Hwang , Ming-Jer Kao
IPC分类号： C25D1/04
CPC分类号： C25D5/02 , C25D3/38 , C25D5/54
摘要： Method of making an electroplated interconnection wire of a composite of metal and carbon nanotubes is disclosed, including electroplating a substrate having a conductive baseline on a surface thereof in an electroplating bath containing a metal ion and carbon nanotubes, so that an electroplated interconnection wire of a composite of the metal and carbon nanotubes is formed on the conductive baseline. Alternatively, a method of the present invention includes preparing a dispersion of carbon nanotubes dispersed in an organic solvent, printing a baseline with the dispersion on a surface of a substrate, evaporating the organic solvent to obtain a conductive baseline, and electroplating the surface in an electroplating bath containing a metal ion, so that an electroplated interconnection wire of a composite of the metal and carbon nanotubes is formed on the conductive baseline.
摘要翻译：公开了一种制造金属和碳纳米管复合材料的电镀互连线的方法，包括在含有金属离子和碳纳米管的电镀浴中在其表面上电镀具有导电基线的基片，使得电镀互连线在导电基线上形成金属和碳纳米管的复合物。或者，本发明的方法包括制备分散在有机溶剂中的碳纳米管的分散体，将基质与分散体印刷在基材的表面上，蒸发有机溶剂以获得导电基线，并将表面电镀在含有金属离子的电镀浴，使得在导电基线上形成金属和碳纳米管的复合材料的电镀互连线。

8. 发明申请

US20050287788A1 Manufacturing method of nanowire array 审中-公开
标题翻译：纳米线阵列的制造方法
公开(公告)号：US20050287788A1
公开(公告)日：2005-12-29
申请号：US10914273
申请日：2004-08-09
申请人： Jeng-Hua Wei , Hung-Hsiang Wang , Po-Yuan Lo , Ming-Jer Kao
发明人： Jeng-Hua Wei , Hung-Hsiang Wang , Po-Yuan Lo , Ming-Jer Kao
IPC分类号： H01L21/00 , H01L21/31 , H01L21/44 , H01L21/469 , H01L21/4763 , H01L21/768 , H01L23/482
CPC分类号： H01L21/76838 , B82Y10/00 , B82Y30/00 , H01L23/4827 , H01L2924/0002 , H01L2924/00
摘要： This specification discloses a manufacturing method of nanowire array. The method includes the steps of: providing a substrate; forming an insulating layer on the substrate; forming a metal catalyst layer on the insulating layer by spin on glass (SOG), the metal catalyst being Au, Ag, or Pt; forming a covering layer on the metal catalyst layer by SOG; patternizing the covering layer exposed out of the metal catalyst layer; etching the exposed metal catalyst layer to form a patternized metal catalyst layer; and forming a plurality of nanowires in the patternized metal catalyst layer.
摘要翻译：本说明书公开了纳米线阵列的制造方法。该方法包括以下步骤：提供衬底; 在所述基板上形成绝缘层; 在玻璃（SOG）上通过旋转在绝缘层上形成金属催化剂层，金属催化剂为Au，Ag或Pt; 通过SOG在金属催化剂层上形成覆盖层; 使从金属催化剂层露出的覆盖层图形化; 蚀刻暴露的金属催化剂层以形成图案化的金属催化剂层; 并在图案化的金属催化剂层中形成多个纳米线。

9. 发明授权

US06962839B2 Apparatus and manufacturing process of carbon nanotube gate field effect transistor 失效
公开(公告)号：US06962839B2
公开(公告)日：2005-11-08
申请号：US10901091
申请日：2004-07-29
申请人： Jeng-Hua Wei , Hsin-Hui Chen , Ming-Jiunn Lai , Hung-Hsiang Wang , Ming-Jer Kao
发明人： Jeng-Hua Wei , Hsin-Hui Chen , Ming-Jiunn Lai , Hung-Hsiang Wang , Ming-Jer Kao
IPC分类号： H01L21/3205 , H01L21/337 , H01L21/4763 , H01L29/43 , H01L51/00 , H01L51/05 , H01L51/10 , H01L51/30 , H03K5/00 , H03K17/00
CPC分类号： H01L51/0541 , B82Y10/00 , H01L51/0021 , H01L51/0048 , H01L51/0052 , H01L51/102 , H01L51/105 , Y10S977/938
摘要： The present invention generally relates to an apparatus and method of carbon nanotube (CNT) gate field effect transistor (FET), which is used to replace the current metal gate of transistor for decreasing the gate width greatly. The carbon nanotube has its own intrinsic characters of metal and semiconductor, so it can be the channel, connector or next-level gate of transistor. Furthermore, the transistor has the structure of exchangeable source and drain, and can be defined the specificity by outside wiring.

10. 发明申请

US20050233585A1 Metal nanoline process and applications on growth of aligned nanostructure thereof 失效
标题翻译：金属牛磺酸工艺及其对准纳米结构生长的应用
公开(公告)号：US20050233585A1
公开(公告)日：2005-10-20
申请号：US10968891
申请日：2004-10-21
申请人： Ming-Jiunn Lai , Jeng-Hua Wei , Hung-Hsiang Wang , Po-Yuan Lo , Ming-Jer Kao
发明人： Ming-Jiunn Lai , Jeng-Hua Wei , Hung-Hsiang Wang , Po-Yuan Lo , Ming-Jer Kao
IPC分类号： B01J23/74 , B01J37/02 , C01B31/02 , H01L21/44 , H01L21/768 , H01L29/06 , H01L51/00
CPC分类号： H01L29/0676 , B01J23/74 , B01J37/0238 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/36 , H01L21/76838 , H01L29/0665 , H01L29/0673 , H01L51/0021 , H01L51/0048 , Y10S977/742
摘要： A metal nanoline process and applications on growth of aligned nanostructures thereof. A nano-structure is provided with a substrate with at least one nanodimensional metal catalyst line disposed thereon and at least one carbon nanotube or silicon nanowire extending along an end of the metal catalyst line.
摘要翻译：一种金属牛磺酸方法及其对齐纳米结构生长的应用。纳米结构设置有具有设置在其上的至少一个纳米金属催化剂管线的衬底和沿着金属催化剂管线的端部延伸的至少一个碳纳米管或硅纳米线。

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