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41. 发明授权

US07719882B2 Advanced MRAM design 有权
标题翻译：先进的MRAM设计
公开(公告)号：US07719882B2
公开(公告)日：2010-05-18
申请号：US11743453
申请日：2007-05-02
申请人： Wen-Chin Lin , Hsu-Chen Cheng , Yu-Jen Wang , Denny Tang
发明人： Wen-Chin Lin , Hsu-Chen Cheng , Yu-Jen Wang , Denny Tang
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/005 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a technique for created an advanced MRAM array for constructing a memory integrated circuit chip. More specifically, the disclosed principles provide for an integrated circuit memory chip comprised of a combination of at least one of an array of high-speed magnetic memory cells, and at least one of an array of high-density magnetic memory cells. Accordingly, a memory chip constructed as disclosed herein provides the benefit of both high-speed and high-density memory cells on the same memory chip. As a result, applications benefiting from the use of (or perhaps even needing) high-speed memory cells are provided by the memory cells in the high-speed memory cell array.
摘要翻译：这里公开了一种用于创建用于构建存储器集成电路芯片的高级MRAM阵列的技术。更具体地，所公开的原理提供了由高速磁存储器单元的阵列中的至少一个和高密度磁存储单元的阵列中的至少一个的组合构成的集成电路存储器芯片。因此，如本文所公开的构造的存储器芯片提供了在相同存储器芯片上的高速和高密度存储器单元的益处。结果，受益于使用（或甚至需要的）高速存储器单元的应用由高速存储单元阵列中的存储单元提供。

42. 发明申请

US20090251890A1 LAMP TUBE AND DESK LAMP HAVING THE SAME 审中-公开
标题翻译：灯管和桌子灯具
公开(公告)号：US20090251890A1
公开(公告)日：2009-10-08
申请号：US12177165
申请日：2008-07-22
申请人： Wen-Hsiang Chien , Wen-Chin Lin
发明人： Wen-Hsiang Chien , Wen-Chin Lin
IPC分类号： F21V33/00 , F21V21/00 , F21L4/00 , H05B37/00
CPC分类号： F21S6/003 , F21L4/027 , F21V21/088 , F21Y2103/00 , F21Y2103/10 , F21Y2115/10
摘要： The present invention relates to a lamp tube suitable for a desk lamp. The lamp tube includes a lamp cover, a light-emitting module, a base, a power-storage element and a power transmission module. The lamp tube is half-cylindrical and has a inner surface and a containing recess. The inner surface is capable of being fixed with the light-emitting module and the containing recess is capable of containing the power-storage element. The power transmission module is electrically connected to the power-storage element and the light-emitting module to transmit the power in the power-storage element to the light-emitting module. The present invention is also relates to a desk lamp having the lamp tube.
摘要翻译：本发明涉及适用于台灯的灯管。灯管包括灯罩，发光模块，基座，蓄电元件和电力传输模块。灯管是半圆柱形的并且具有内表面和容纳凹部。内表面能够与发光模块固定，并且容纳凹部能够容纳蓄电元件。电力传输模块电连接到蓄电元件和发光模块，以将功率存储元件中的电力传输到发光模块。本发明还涉及具有灯管的台灯。

43. 发明授权

US07599215B2 Magnetoresistive random access memory device with small-angle toggle write lines 有权
标题翻译：具有小角度切换写入线的磁阻随机存取存储器件
公开(公告)号：US07599215B2
公开(公告)日：2009-10-06
申请号：US11840051
申请日：2007-08-16
申请人： Wen-Chin Lin , Denny Tang , Hsu Chen Cheng
发明人： Wen-Chin Lin , Denny Tang , Hsu Chen Cheng
IPC分类号： G11C11/15
CPC分类号： G11C11/16
摘要： Disclosed herein are toggle-mode magnetoresistive random access memory (MRAM) devices having small-angle toggle write lines, and related methods of toggle-mode switching MRAM devices. Also disclosed are layouts for MRAM devices constructed according to the disclosed principles. Generally speaking, the disclosed principles provide for non-orthogonally aligned toggle-mode write lines used to switch toggle-mode MRAM devices that employ a bias field to decrease the threshold needed to switch the magnetic state of each device. While the conventional toggle-mode write lines provide for the desired orthogonal orientation of the applied magnetic fields to optimize device switching, the use of a bias field affects this orthogonal orientation. By non-orthogonally aligning the two write lines as disclosed herein, the detrimental affect of the bias field may be compensated for such that the net fields applied to the device for both lines are again substantially orthogonal, as is desired.
摘要翻译：这里公开了具有小角度切换写入线的触发模式磁阻随机存取存储器（MRAM）器件以及触发模式切换MRAM器件的相关方法。还公开了根据所公开的原理构造的MRAM装置的布局。一般来说，所公开的原理提供用于切换切换模式MRAM器件的非正交对准的触发模式写入线，其使用偏置场来降低切换每个器件的磁状态所需的阈值。虽然常规的切换模式写入线提供所施加的磁场的期望的正交取向以优化器件切换，但偏置场的使用影响该正交取向。如本文所公开的，通过非正交对准这两个写入线，可以补偿偏置场的有害影响，使得如所期望的那样，施加到两条线的器件的净场也基本正交。

44. 发明授权

US07545662B2 Method and system for magnetic shielding in semiconductor integrated circuit 有权
标题翻译：半导体集成电路中磁屏蔽的方法和系统
公开(公告)号：US07545662B2
公开(公告)日：2009-06-09
申请号：US11089969
申请日：2005-03-25
申请人： Chao-Hsiung Wang , Horng-Huei Tseng , Denny Tang , Wen-Chin Lin , Mark Hsieh
发明人： Chao-Hsiung Wang , Horng-Huei Tseng , Denny Tang , Wen-Chin Lin , Mark Hsieh
IPC分类号： G11C7/02
CPC分类号： G11C11/16 , G11C5/025 , H01L23/5225 , H01L27/222 , H01L43/12 , H01L2924/0002 , H01L2924/00
摘要： A circuit with an inter-module radiation interference shielding mechanism is disclosed. The circuit includes a circuit module producing a radiation field. At least one radiation shielding module is situated between the circuit module and another module that is vulnerable to the interference of the radiation field. The shielding module is substantially tangential to the radiation field.
摘要翻译：公开了一种具有模块间辐射干扰屏蔽机构的电路。电路包括产生辐射场的电路模块。至少一个辐射屏蔽模块位于电路模块和易受辐射场干扰的另一个模块之间。屏蔽模块基本上与辐射场相切。

45. 发明授权

US07443638B2 Magnetoresistive structures and fabrication methods 有权
标题翻译：磁阻结构和制造方法
公开(公告)号：US07443638B2
公开(公告)日：2008-10-28
申请号：US10907974
申请日：2005-04-22
申请人： Yu-Jen Wang , Chih-Huang Lai , Wen-Chin Lin , Denny Tang , Chao-Hsiung Wang
发明人： Yu-Jen Wang , Chih-Huang Lai , Wen-Chin Lin , Denny Tang , Chao-Hsiung Wang
IPC分类号： G11B5/39 , G11B5/33
CPC分类号： G11B5/3929 , B82Y10/00 , G11B2005/3996
摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.
摘要翻译：这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

46. 发明授权

US07205632B2 Anti-scattering attenuator structure for high energy particle radiation into integrated circuits 有权
标题翻译：抗散射衰减器结构，用于高能粒子辐射成集成电路
公开(公告)号：US07205632B2
公开(公告)日：2007-04-17
申请号：US10818009
申请日：2004-04-05
申请人： Wen-Chin Lin , Denny D. Tang , Chao-Hsiung Wang
发明人： Wen-Chin Lin , Denny D. Tang , Chao-Hsiung Wang
IPC分类号： H01L29/00
CPC分类号： H01L21/263 , H01L27/0688 , H01L27/08
摘要： A microelectronics device including a semiconductor device located at least partially over a substrate, a bombarded area located at least partially over the substrate and adjacent the semiconductor device, and a bombarded attenuator interposing the semiconductor device and the bombarded area.
摘要翻译：一种微电子器件，包括至少部分地位于衬底上的半导体器件，至少部分地位于衬底上并且邻近半导体器件的轰击区域，以及插入半导体器件和被轰击区域的轰击衰减器。

47. 发明授权

US07151271B2 System and method for passing high energy particles through a mask 有权
标题翻译：将高能粒子通过掩模的系统和方法
公开(公告)号：US07151271B2
公开(公告)日：2006-12-19
申请号：US10681541
申请日：2003-10-08
申请人： Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin , Li-Shyue Lai
发明人： Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin , Li-Shyue Lai
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A method and system is disclosed for concentrating high energy particles on a predetermined area on a target semiconductor substrate. A high energy source for generating a predetermined amount of high energy particles, and an electro-magnetic radiation source for generating low energy beams are used together. The system also uses a mask set having at least one mask with at least one alignment area and at least one mask target area thereon, the mask target area passing more high energy particles then any other area of the mask. At least one protection shield is incorporated in the system for protecting the alignment area from being exposed to the high energy particles, wherein the mask is aligned with the predetermined target semiconductor substrate by passing the low energy beams through the alignment area, wherein the high energy particles generated by the high energy source pass through the mask target area to land on the predetermined area on the target semiconductor substrate.
摘要翻译：公开了一种用于将高能粒子集中在目标半导体衬底上的预定区域上的方法和系统。用于产生预定量的高能粒子的高能量源和用于产生低能量束的电磁辐射源一起使用。该系统还使用具有至少一个具有至少一个对准区域和至少一个掩模目标区域的掩模的掩模组，掩模目标区域通过更多的高能粒子，然后通过掩模的任何其它区域。至少一个保护屏蔽被并入系统中，用于保护对准区域不暴露于高能粒子，其中通过使低能量束通过对准区域，掩模与预定目标半导体衬底对齐，其中高能量由高能量源产生的粒子通过掩模对象区域落在目标半导体衬底上的预定区域上。

48. 发明申请

US20060183318A1 MAGNETIC MEMORY CELLS AND MANUFACTURING METHODS 有权
标题翻译：磁记忆细胞和制造方法
公开(公告)号：US20060183318A1
公开(公告)日：2006-08-17
申请号：US10906357
申请日：2005-02-15
申请人： Yuan-Hung Liu , Chih-Ta Wu , Lan-Lin Chao , Yeur-Luen Tu , Wen-Chin Lin , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Chih-Ta Wu , Lan-Lin Chao , Yeur-Luen Tu , Wen-Chin Lin , Chia-Shiung Tsai
IPC分类号： H01L21/4763 , H01L21/00
CPC分类号： H01L43/12 , H01L27/228
摘要： An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.
摘要翻译：改进的磁阻存储器件具有减小的磁存储元件与用于写入磁存储器元件的导电存储器线之间的距离。通过根据包括在磁阻存储元件上形成掩模并在掩模层上形成绝缘层，然后使用平坦化处理去除绝缘层的部分的方法，通过形成改进的磁阻存储器件来简化缩短的距离。然后可以在掩模层中形成导电通孔，例如使用镶嵌工艺。然后可以在掩模层和导电通孔上形成导电存储器线。

49. 发明授权

US07070490B2 Vacuum suction membrane for holding silicon wafer 失效
标题翻译：用于保持硅晶片的真空吸膜
公开(公告)号：US07070490B2
公开(公告)日：2006-07-04
申请号：US10109015
申请日：2002-03-28
申请人： Tzu-Shin Chen , Ming-Hsing Kao , Wen-Chin Lin , Hua-Bin Chi
发明人： Tzu-Shin Chen , Ming-Hsing Kao , Wen-Chin Lin , Hua-Bin Chi
IPC分类号： B24B5/00
CPC分类号： B24B37/30 , B25B11/005 , H01L21/6838
摘要： A membrane for vacuum suction of a silicon water typically used inside a polishing head. The membrane has a flat main body and a plurality of protrusions each having a spiny shape over the surface of the flat main body. The protrusions are formed in positions that correspond to the holes of a supporting multiple-hole panel. The protrusions on the flat main body lower the suction pressure between the wafer and the membrane somewhat so that wafer unloading failure is minimized.
摘要翻译：通常用于抛光头内部的硅水的真空抽吸膜。膜具有扁平主体和多个突起，每个突起在平坦主体的表面上具有多晶形状。突起形成在与支撑多孔板的孔相对应的位置。扁平主体上的突起稍微降低了晶片和膜之间的吸入压力，使得晶片卸载故障最小化。

50. 发明授权

US06985383B2 Reference generator for multilevel nonlinear resistivity memory storage elements 失效
标题翻译：多电平非线性电阻率存储元件的参考发生器
公开(公告)号：US06985383B2
公开(公告)日：2006-01-10
申请号：US10689421
申请日：2003-10-20
申请人： Denny D. Tang , Wen-Chin Lin
发明人： Denny D. Tang , Wen-Chin Lin
IPC分类号： G11C11/14 , G11C11/15 , G11C7/14
CPC分类号： G11C5/147 , G11C11/16 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C2211/5634
摘要： A multilevel reference generator has a plurality of nonlinear standard resistive elements where each resistive element is biased at a constant level to develop a resultant level. The multilevel reference generator has a plurality of mirror sources. Each mirror source is in communication with the one of the plurality of resistive elements such that each mirror source receives the resultant level from the one standard resistive element and provides a mirrored replication of the resultant level. The multilevel reference generator has a plurality of reference level combining circuits. The reference level combining circuit includes a resultant level summing circuit that additively combines the first and second mirrored replication level and a level scaling circuit to create a scaling of the combined first and second mirrored replication levels to create the reference level.
摘要翻译：多电平参考发生器具有多个非线性标准电阻元件，其中每个电阻元件被偏置在恒定电平以产生合成电平。多电平参考发生器具有多个镜源。每个反射镜源与多个电阻元件中的一个电阻元件相通，使得每个反射镜源从一个标准电阻元件接收合成电平，并提供所得电平的镜像复制。多电平参考发生器具有多个参考电平组合电路。参考电平组合电路包括相加地组合第一和第二镜像复制级别的电平求和电路和级别缩放电路，以创建组合的第一和第二镜像复制级别的缩放以创建参考电平。

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