专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070096230A1 Magnetic memory cells and manufacturing methods 有权
标题翻译：磁记忆体和制造方法
公开(公告)号：US20070096230A1
公开(公告)日：2007-05-03
申请号：US11610760
申请日：2006-12-14
申请人： Yuan-Hung Liu , Chih-Ta Wu , Lan-Lin Chao , Yeur-Luen Tu , Wen-Chin Lin , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Chih-Ta Wu , Lan-Lin Chao , Yeur-Luen Tu , Wen-Chin Lin , Chia-Shiung Tsai
IPC分类号： H01L43/00 , H01L29/82
CPC分类号： H01L43/12 , H01L27/228
摘要： An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.
摘要翻译：改进的磁阻存储器件具有减小的磁存储元件与用于写入磁存储器元件的导电存储器线之间的距离。通过根据包括在磁阻存储元件上形成掩模并在掩模层上形成绝缘层，然后使用平坦化处理去除绝缘层的部分的方法，通过形成改进的磁阻存储器件来简化缩短的距离。然后可以在掩模层中形成导电通孔，例如使用镶嵌工艺。然后可以在掩模层和导电通孔上形成导电存储器线。

2. 发明授权

US07554145B2 Magnetic memory cells and manufacturing methods 有权
标题翻译：磁记忆体和制造方法
公开(公告)号：US07554145B2
公开(公告)日：2009-06-30
申请号：US11610760
申请日：2006-12-14
申请人： Yuan-Hung Liu , Chih-Ta Wu , Lan-Lin Chao , Yeur-Luen Tu , Wen-Chin Lin , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Chih-Ta Wu , Lan-Lin Chao , Yeur-Luen Tu , Wen-Chin Lin , Chia-Shiung Tsai
IPC分类号： H01L29/76
CPC分类号： H01L43/12 , H01L27/228
摘要： An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.
摘要翻译：改进的磁阻存储器件具有减小的磁存储元件与用于写入磁存储器元件的导电存储器线之间的距离。通过根据包括在磁阻存储元件上形成掩模并在掩模层上形成绝缘层，然后使用平坦化处理去除绝缘层的部分的方法，通过形成改进的磁阻存储器件来简化缩短的距离。然后可以在掩模层中形成导电通孔，例如使用镶嵌工艺。然后可以在掩模层和导电通孔上形成导电存储器线。

3. 发明申请

US20060183318A1 MAGNETIC MEMORY CELLS AND MANUFACTURING METHODS 有权
标题翻译：磁记忆细胞和制造方法
公开(公告)号：US20060183318A1
公开(公告)日：2006-08-17
申请号：US10906357
申请日：2005-02-15
申请人： Yuan-Hung Liu , Chih-Ta Wu , Lan-Lin Chao , Yeur-Luen Tu , Wen-Chin Lin , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Chih-Ta Wu , Lan-Lin Chao , Yeur-Luen Tu , Wen-Chin Lin , Chia-Shiung Tsai
IPC分类号： H01L21/4763 , H01L21/00
CPC分类号： H01L43/12 , H01L27/228
摘要： An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.
摘要翻译：改进的磁阻存储器件具有减小的磁存储元件与用于写入磁存储器元件的导电存储器线之间的距离。通过根据包括在磁阻存储元件上形成掩模并在掩模层上形成绝缘层，然后使用平坦化处理去除绝缘层的部分的方法，通过形成改进的磁阻存储器件来简化缩短的距离。然后可以在掩模层中形成导电通孔，例如使用镶嵌工艺。然后可以在掩模层和导电通孔上形成导电存储器线。

4. 发明授权

US07172908B2 Magnetic memory cells and manufacturing methods 有权
公开(公告)号：US07172908B2
公开(公告)日：2007-02-06
申请号：US10906357
申请日：2005-02-15
申请人： Yuan-Hung Liu , Chih-Ta Wu , Lan-Lin Chao , Yeur-Luen Tu , Wen-Chin Lin , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Chih-Ta Wu , Lan-Lin Chao , Yeur-Luen Tu , Wen-Chin Lin , Chia-Shiung Tsai
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L27/228
摘要： An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.

5. 发明授权

US07202130B2 Spacer for a split gate flash memory cell and a memory cell employing the same 有权
标题翻译：分离栅闪存单元的间隔器和采用其的存储单元
公开(公告)号：US07202130B2
公开(公告)日：2007-04-10
申请号：US10775290
申请日：2004-02-10
申请人： Yuan-Hung Liu , Chih-Ta Wu , Yeur-Luen Tu , Chi-Hsin Lo , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Chih-Ta Wu , Yeur-Luen Tu , Chi-Hsin Lo , Chia-Shiung Tsai
IPC分类号： H01L21/336 , H01L29/788
CPC分类号： H01L27/11568 , H01L27/115 , H01L27/11521 , H01L29/42324
摘要： A spacer, a split gate flash memory cell, and related method of forming the same. In one aspect, a composite spacer includes a first spacer insulating layer having a first deposition distribution that varies as a function of a location on a substrate. The composite spacer also includes a second spacer insulating layer having a second deposition distribution that varies in substantial opposition to the first deposition distribution. In another aspect, a composite spacer includes a first spacer insulating layer having a substantially uniform deposition distribution across a surface thereof. The composite spacer also includes a second spacer insulating layer having a varying deposition distribution with a thinner composition in selected regions of the memory cell. In another aspect, a coupling spacer provides for a conductive layer that extends between a floating gate and a substrate insulating layer adjacent a source recessed into the substrate of the memory cell.
摘要翻译：间隔物，分裂栅极闪存单元及其相关方法。在一个方面，一种复合间隔物包括具有第一沉积分布的第一间隔绝缘层，其随着基底上的位置而变化。复合间隔物还包括具有与第一沉积分布基本相反的第二沉积分布的第二间隔绝缘层。在另一方面，复合间隔物包括在其表面上具有基本均匀的沉积分布的第一间隔绝缘层。复合间隔物还包括具有在存储单元的选定区域中具有较薄组成的不同沉积分布的第二间隔绝缘层。在另一方面，耦合间隔物提供导电层，该导电层在浮置栅极和与凹入到存储器单元的衬底中的源极相邻的衬底绝缘层之间延伸。

6. 发明授权

US08889507B2 MIM capacitors with improved reliability 有权
标题翻译： MIM电容器具有更高的可靠性
公开(公告)号：US08889507B2
公开(公告)日：2014-11-18
申请号：US11765971
申请日：2007-06-20
申请人： Chih-Ta Wu , Jason Lee , Chung Chien Wang , Hsing-Lien Lin , Yu-Jen Wang , Yeur-Luen Tu , Chern-Yow Hsu , Yuan-Hung Liu , Chi-Hsin Lo , Chia-Shiung Tsai , Lucy Chang , Chia-Lin Chen , Ming-Chih Tsai
发明人： Chih-Ta Wu , Jason Lee , Chung Chien Wang , Hsing-Lien Lin , Yu-Jen Wang , Yeur-Luen Tu , Chern-Yow Hsu , Yuan-Hung Liu , Chi-Hsin Lo , Chia-Shiung Tsai , Lucy Chang , Chia-Lin Chen , Ming-Chih Tsai
IPC分类号： H01L21/8234 , H01L21/8244 , H01L49/02 , H01L27/108
CPC分类号： H01L27/10814 , H01L27/10852 , H01L28/40 , H01L28/75
摘要： A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.
摘要翻译：提供电容器及其形成方法。该方法包括形成底部电极; 在含氧环境中处理底部电极以将底部电极的顶层转化为缓冲层; 在缓冲层上形成绝缘层; 并在所述绝缘层上形成顶部电极。

7. 发明申请

US20050274968A1 Lens structures suitable for use in image sensors and method for making the same 有权
标题翻译：适用于图像传感器的镜头结构及其制作方法
公开(公告)号：US20050274968A1
公开(公告)日：2005-12-15
申请号：US10982978
申请日：2004-11-05
申请人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
发明人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
IPC分类号： H01L21/00 , H01L27/146 , H01L29/04 , H01L29/06 , H01L29/10 , H01L29/22 , H01L29/227 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L33/00 , H01L47/02
CPC分类号： H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion of a photoresist material reacts with a silicon-containing agent. The inner or outer microlens may be formed by step etching of a dielectric material, the step etching process including a series of alternating etch steps including an anisotropic etching step and an etching step that causes patterned photoresist to laterally recede. Subsequent isotropic etching processes may be used to smooth the etched step structure and form a smooth lens. A thermally stable and photosensitive polymeric/organic material may also be used to form permanent inner or outer lenses. The photosensitive material is coated then patterned using photolithography, reflowed, then cured to form a permanent lens structure.
摘要翻译：图像传感器包括双微透镜结构，其外部微透镜在内部微透镜上对准，两个微透镜在相应的光电传感器上对准。内部或外部微透镜可以通过甲硅烷基化方法形成，其中光致抗蚀剂材料的反应性部分与含硅试剂反应。内部或外部微透镜可以通过介电材料的步骤蚀刻形成，该步骤蚀刻工艺包括一系列交替蚀刻步骤，其包括各向异性蚀刻步骤和使图案化光致抗蚀剂横向后退的蚀刻步骤。可以使用随后的各向同性蚀刻工艺来平滑蚀刻的台阶结构并形成光滑的透镜。热稳定和感光的聚合物/有机材料也可用于形成永久的内镜片或外镜片。感光材料被涂覆，然后使用光刻图案化，回流，然后固化以形成永久性透镜结构。

8. 发明授权

US07443005B2 Lens structures suitable for use in image sensors and method for making the same 有权
标题翻译：适用于图像传感器的镜头结构及其制作方法
公开(公告)号：US07443005B2
公开(公告)日：2008-10-28
申请号：US10982978
申请日：2004-11-05
申请人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Hsien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
发明人： Ching-Sen Kuo , Feng-Jia Shiu , Gwo-Yuh Shiau , Jieh-Jang Chen , Shih-Chi Fu , Chien Hsien Tseng , Chia-Shiung Tsai , Yuan-Hung Liu , Yeur-Luen Tu , Chih-Ta Wu , Chi-Hsin Lo
IPC分类号： H01L29/78
CPC分类号： H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： An image sensor includes a double-microlens structure with an outer microlens aligned over an inner microlens, both microlenses aligned over a corresponding photosensor. The inner or outer microlens may be formed by a silylation process in which a reactive portion of a photoresist material reacts with a silicon-containing agent. The inner or outer microlens may be formed by step etching of a dielectric material, the step etching process including a series of alternating etch steps including an anisotropic etching step and an etching step that causes patterned photoresist to laterally recede. Subsequent isotropic etching processes may be used to smooth the etched step structure and form a smooth lens. A thermally stable and photosensitive polymeric/organic material may also be used to form permanent inner or outer lenses. The photosensitive material is coated then patterned using photolithography, reflowed, then cured to form a permanent lens structure.
摘要翻译：图像传感器包括双微透镜结构，其外部微透镜在内部微透镜上对准，两个微透镜在相应的光电传感器上对准。内部或外部微透镜可以通过甲硅烷基化方法形成，其中光致抗蚀剂材料的反应性部分与含硅试剂反应。内部或外部微透镜可以通过介电材料的步骤蚀刻形成，该步骤蚀刻工艺包括一系列交替蚀刻步骤，其包括各向异性蚀刻步骤和使图案化光致抗蚀剂横向后退的蚀刻步骤。可以使用随后的各向同性蚀刻工艺来平滑蚀刻的台阶结构并形成光滑的透镜。热稳定和感光的聚合物/有机材料也可用于形成永久的内镜片或外镜片。感光材料被涂覆，然后使用光刻图案化，回流，然后固化以形成永久性透镜结构。

9. 发明申请

US20080318378A1 MIM Capacitors with Improved Reliability 有权
标题翻译： MIM电容器具有改进的可靠性
公开(公告)号：US20080318378A1
公开(公告)日：2008-12-25
申请号：US11765971
申请日：2007-06-20
申请人： Chih-Ta Wu , Jason Lee , Chung Chien Wang , Hsing-Lien Lin , Yu-Jen Wang , Yeur-Luen Tu , Chern-Yow Hsu , Yuan-Hung Liu , Chi-Hsin Lo , Chia-Shiung Tsai , Lucy Chang , Chia-Lin Chen , Ming-Chih Tsai
发明人： Chih-Ta Wu , Jason Lee , Chung Chien Wang , Hsing-Lien Lin , Yu-Jen Wang , Yeur-Luen Tu , Chern-Yow Hsu , Yuan-Hung Liu , Chi-Hsin Lo , Chia-Shiung Tsai , Lucy Chang , Chia-Lin Chen , Ming-Chih Tsai
IPC分类号： H01L21/20 , H01L21/8242
CPC分类号： H01L27/10814 , H01L27/10852 , H01L28/40 , H01L28/75
摘要： A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.
摘要翻译：提供电容器及其形成方法。该方法包括形成底部电极; 在含氧环境中处理底部电极以将底部电极的顶层转化为缓冲层; 在缓冲层上形成绝缘层; 并在所述绝缘层上形成顶部电极。

10. 发明申请

US20050176201A1 Spacer for a split gate flash memory cell and a memory cell employing the same 有权
标题翻译：分离栅闪存单元的间隔器和采用其的存储单元
公开(公告)号：US20050176201A1
公开(公告)日：2005-08-11
申请号：US10775290
申请日：2004-02-10
申请人： Yuan-Hung Liu , Chih-Ta Wu , Yeur-Luen Tu , Chi-Hsin Lo , Chia-Shiung Tsai
发明人： Yuan-Hung Liu , Chih-Ta Wu , Yeur-Luen Tu , Chi-Hsin Lo , Chia-Shiung Tsai
IPC分类号： H01L21/336 , H01L21/8246 , H01L21/8247 , H01L27/115 , H01L29/423
CPC分类号： H01L27/11568 , H01L27/115 , H01L27/11521 , H01L29/42324
摘要： A spacer, a split gate flash memory cell, and related method of forming the same. In one aspect, a composite spacer includes a first spacer insulating layer having a first deposition distribution that varies as a function of a location on a substrate. The composite spacer also includes a second spacer insulating layer having a second deposition distribution that varies in substantial opposition to the first deposition distribution. In another aspect, a composite spacer includes a first spacer insulating layer having a substantially uniform deposition distribution across a surface thereof. The composite spacer also includes a second spacer insulating layer having a varying deposition distribution with a thinner composition in selected regions of the memory cell. In another aspect, a coupling spacer provides for a conductive layer that extends between a floating gate and a substrate insulating layer adjacent a source recessed into the substrate of the memory cell.
摘要翻译：间隔物，分裂栅极闪存单元及其相关方法。在一个方面，一种复合间隔物包括具有第一沉积分布的第一间隔绝缘层，其随着基底上的位置而变化。复合间隔物还包括具有与第一沉积分布基本相反地变化的第二沉积分布的第二间隔绝缘层。在另一方面，复合间隔物包括在其表面上具有基本均匀的沉积分布的第一间隔绝缘层。复合间隔物还包括具有在存储单元的选定区域中具有较薄组成的不同沉积分布的第二间隔绝缘层。在另一方面，耦合间隔物提供了在浮置栅极和与凹入到存储器单元的衬底中的源极相邻的衬底绝缘层之间延伸的导电层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式