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1. 发明授权

US07205632B2 Anti-scattering attenuator structure for high energy particle radiation into integrated circuits 有权
标题翻译：抗散射衰减器结构，用于高能粒子辐射成集成电路
公开(公告)号：US07205632B2
公开(公告)日：2007-04-17
申请号：US10818009
申请日：2004-04-05
申请人： Wen-Chin Lin , Denny D. Tang , Chao-Hsiung Wang
发明人： Wen-Chin Lin , Denny D. Tang , Chao-Hsiung Wang
IPC分类号： H01L29/00
CPC分类号： H01L21/263 , H01L27/0688 , H01L27/08
摘要： A microelectronics device including a semiconductor device located at least partially over a substrate, a bombarded area located at least partially over the substrate and adjacent the semiconductor device, and a bombarded attenuator interposing the semiconductor device and the bombarded area.
摘要翻译：一种微电子器件，包括至少部分地位于衬底上的半导体器件，至少部分地位于衬底上并且邻近半导体器件的轰击区域，以及插入半导体器件和被轰击区域的轰击衰减器。

2. 发明授权

US08263959B2 Phase change memory device and method of manufacture thereof 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US08263959B2
公开(公告)日：2012-09-11
申请号：US11746315
申请日：2007-05-09
申请人： Chao-Hsiung Wang , Li-Shyue Lai , Denny Tang , Wen-Chin Lin
发明人： Chao-Hsiung Wang , Li-Shyue Lai , Denny Tang , Wen-Chin Lin
IPC分类号： H01L29/04
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L45/1683
摘要： A method of manufacturing a memory device is provided. The method includes forming an electrode over a substrate. The method also includes forming an opening in the electrode to provide a tapered electrode contact surface proximate the opening. The method further includes forming a phase change feature over the electrode and on the tapered electrode contact surface.
摘要翻译：提供一种制造存储器件的方法。该方法包括在衬底上形成电极。该方法还包括在电极中形成开口以提供靠近开口的锥形电极接触表面。该方法还包括在电极上和锥形电极接触表面上形成相变特征。

3. 发明授权

US08153471B2 Method for forming a reduced active area in a phase change memory structure 有权
标题翻译：在相变存储器结构中形成减小的有效面积的方法
公开(公告)号：US08153471B2
公开(公告)日：2012-04-10
申请号：US12945860
申请日：2010-11-14
申请人： Li-Shyue Lai , Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin
发明人： Li-Shyue Lai , Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/1273 , H01L45/144 , H01L45/1691
摘要： A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory element contact area; and, wherein the spacer bottom portion partially overlaps the conductive area. Both these two methods can reduce active area of a phase change memory element, therefore, reducing a required phase changing electrical current.
摘要翻译：一种相变存储器结构及其形成方法，所述方法包括提供包括导电区域的衬底; 在间隔物的上部形成具有部分暴露的侧壁区域的间隔物，其限定相变存储元件接触区域; 并且其中所述间隔件底部部分与所述导电区域重叠。这两种方法都可以减少相变存储元件的有效面积，从而减少所需的相变电流。

4. 发明申请

US20070091672A1 MRAM arrays and methods for writing and reading magnetic memory devices 有权
标题翻译： MRAM阵列和写入和读取磁存储器件的方法
公开(公告)号：US20070091672A1
公开(公告)日：2007-04-26
申请号：US11610739
申请日：2006-12-14
申请人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chao-Hsiung Wang , Fan-Shi Lai
发明人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chao-Hsiung Wang , Fan-Shi Lai
IPC分类号： G11C11/00
CPC分类号： G11C11/1673
摘要： A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.
摘要翻译：一种用于写入和读取磁存储单元的非破坏性技术和相关阵列，包括对与选择存储器单元相对应的所选读取行的第一信号进行采样，向选择存储单元施加磁场，对所选择的读取的第二信号并且比较第一和第二信号以确定选择存储器单元的逻辑状态。

5. 发明授权

US07105879B2 Write line design in MRAM 有权
公开(公告)号：US07105879B2
公开(公告)日：2006-09-12
申请号：US10827769
申请日：2004-04-20
申请人： Wen Chin Lin , Denny Tang , Li-shyue Lai , Chao-Hsiung Wang
发明人： Wen Chin Lin , Denny Tang , Li-shyue Lai , Chao-Hsiung Wang
IPC分类号： H01L29/76
CPC分类号： G11C11/15 , G11C5/063
摘要： A magnetic random access memory device (MRAM) and the method for forming the same are disclosed. The MRAM has a magnetic tunnel junction (MTJ) device, a first write line, and a second write line orthogonal to the first write line, wherein at least one of the first and second write lines has a width narrower than that of the MTJ.

6. 发明授权

US07042032B2 Magnetoresistive (MR) magnetic data storage device with sidewall spacer layer isolation 有权
标题翻译：具有侧壁间隔层隔离的磁阻（MR）磁数据存储装置
公开(公告)号：US07042032B2
公开(公告)日：2006-05-09
申请号：US10401945
申请日：2003-03-27
申请人： Wen-Chin Lin , Denny Duan-Lee Tang , Chao-Hsiung Wang
发明人： Wen-Chin Lin , Denny Duan-Lee Tang , Chao-Hsiung Wang
IPC分类号： H01L29/76
CPC分类号： H01L43/08 , G11C11/15 , H01L43/12
摘要： A magnetoresistive magnetic data storage product and a method for fabrication thereof both employ a magnetic data storage device formed over a substrate. The magnetic data storage device comprises a free magnetoresistive material layer separated from a pinned magnetoresistive material layer by a dielectric spacer material layer, each having a sidewall. The magnetic data storage product also comprises a sidewall spacer material layer formed annularly surrounding and covering the sidewall of at least one of the free magnetoresistive material layer and the pinned magnetoresistive material layer. The magnetic data storage product is fabricated with enhanced magnetic data storage density.
摘要翻译：磁阻磁数据存储产品及其制造方法都采用形成在衬底上的磁数据存储装置。磁数据存储装置包括通过电介质间隔物材料层与固定磁阻材料层分离的自由磁阻材料层，每层具有侧壁。磁数据存储产品还包括环形围绕并覆盖自由磁阻材料层和钉扎磁阻材料层中的至少一个的侧壁的侧壁间隔物材料层。磁数据存储产品采用增强的磁数据存储密度制造。

7. 发明申请

US20050077485A1 System and method for passing high energy particles through a mask 有权
标题翻译：将高能粒子通过掩模的系统和方法
公开(公告)号：US20050077485A1
公开(公告)日：2005-04-14
申请号：US10681541
申请日：2003-10-08
申请人： Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin , Li-Shyue Lai
发明人： Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin , Li-Shyue Lai
IPC分类号： G21G5/00 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A method and system is disclosed for concentrating high energy particles on a predetermined area on a target semiconductor substrate. A high energy source for generating a predetermined amount of high energy particles, and an electromagnetic radiation source for generating low energy beams are used together. The system also uses a mask set having at least one mask with at least one alignment area and at least one mask target area thereon, the mask target area passing more high energy particles then any other area of the mask. At least one protection shield is incorporated in the system for protecting the alignment area from being exposed to the high energy particles, wherein the mask is aligned with the predetermined target semiconductor substrate by passing the low energy beams through the alignment area, wherein the high energy particles generated by the high energy source pass through the mask target area to land on the predetermined area on the target semiconductor substrate.
摘要翻译：公开了一种用于将高能粒子集中在目标半导体衬底上的预定区域上的方法和系统。用于产生预定量的高能粒子的高能量源和用于产生低能量束的电磁辐射源一起使用。该系统还使用具有至少一个具有至少一个对准区域和至少一个掩模目标区域的掩模的掩模组，掩模目标区域通过更多的高能粒子，然后通过掩模的任何其它区域。至少一个保护屏蔽被并入系统中，用于保护对准区域不暴露于高能粒子，其中通过使低能量束通过对准区域，掩模与预定目标半导体衬底对齐，其中高能量由高能量源产生的粒子通过掩模对象区域落在目标半导体衬底上的预定区域上。

8. 发明授权

US07545662B2 Method and system for magnetic shielding in semiconductor integrated circuit 有权
标题翻译：半导体集成电路中磁屏蔽的方法和系统
公开(公告)号：US07545662B2
公开(公告)日：2009-06-09
申请号：US11089969
申请日：2005-03-25
申请人： Chao-Hsiung Wang , Horng-Huei Tseng , Denny Tang , Wen-Chin Lin , Mark Hsieh
发明人： Chao-Hsiung Wang , Horng-Huei Tseng , Denny Tang , Wen-Chin Lin , Mark Hsieh
IPC分类号： G11C7/02
CPC分类号： G11C11/16 , G11C5/025 , H01L23/5225 , H01L27/222 , H01L43/12 , H01L2924/0002 , H01L2924/00
摘要： A circuit with an inter-module radiation interference shielding mechanism is disclosed. The circuit includes a circuit module producing a radiation field. At least one radiation shielding module is situated between the circuit module and another module that is vulnerable to the interference of the radiation field. The shielding module is substantially tangential to the radiation field.
摘要翻译：公开了一种具有模块间辐射干扰屏蔽机构的电路。电路包括产生辐射场的电路模块。至少一个辐射屏蔽模块位于电路模块和易受辐射场干扰的另一个模块之间。屏蔽模块基本上与辐射场相切。

9. 发明授权

US07443638B2 Magnetoresistive structures and fabrication methods 有权
标题翻译：磁阻结构和制造方法
公开(公告)号：US07443638B2
公开(公告)日：2008-10-28
申请号：US10907974
申请日：2005-04-22
申请人： Yu-Jen Wang , Chih-Huang Lai , Wen-Chin Lin , Denny Tang , Chao-Hsiung Wang
发明人： Yu-Jen Wang , Chih-Huang Lai , Wen-Chin Lin , Denny Tang , Chao-Hsiung Wang
IPC分类号： G11B5/39 , G11B5/33
CPC分类号： G11B5/3929 , B82Y10/00 , G11B2005/3996
摘要： Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.
摘要翻译：这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

10. 发明授权

US07151271B2 System and method for passing high energy particles through a mask 有权
标题翻译：将高能粒子通过掩模的系统和方法
公开(公告)号：US07151271B2
公开(公告)日：2006-12-19
申请号：US10681541
申请日：2003-10-08
申请人： Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin , Li-Shyue Lai
发明人： Chao-Hsiung Wang , Denny Tang , Wen-Chin Lin , Li-Shyue Lai
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A method and system is disclosed for concentrating high energy particles on a predetermined area on a target semiconductor substrate. A high energy source for generating a predetermined amount of high energy particles, and an electro-magnetic radiation source for generating low energy beams are used together. The system also uses a mask set having at least one mask with at least one alignment area and at least one mask target area thereon, the mask target area passing more high energy particles then any other area of the mask. At least one protection shield is incorporated in the system for protecting the alignment area from being exposed to the high energy particles, wherein the mask is aligned with the predetermined target semiconductor substrate by passing the low energy beams through the alignment area, wherein the high energy particles generated by the high energy source pass through the mask target area to land on the predetermined area on the target semiconductor substrate.
摘要翻译：公开了一种用于将高能粒子集中在目标半导体衬底上的预定区域上的方法和系统。用于产生预定量的高能粒子的高能量源和用于产生低能量束的电磁辐射源一起使用。该系统还使用具有至少一个具有至少一个对准区域和至少一个掩模目标区域的掩模的掩模组，掩模目标区域通过更多的高能粒子，然后通过掩模的任何其它区域。至少一个保护屏蔽被并入系统中，用于保护对准区域不暴露于高能粒子，其中通过使低能量束通过对准区域，掩模与预定目标半导体衬底对齐，其中高能量由高能量源产生的粒子通过掩模对象区域落在目标半导体衬底上的预定区域上。

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