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41. 发明授权

US06924542B2 Trench isolation without grooving 有权
公开(公告)号：US06924542B2
公开(公告)日：2005-08-02
申请号：US10901948
申请日：2004-07-29
申请人： Hua Ji , Dong Jun Kim , Jin-Ho Kim , Chuck Jang
发明人： Hua Ji , Dong Jun Kim , Jin-Ho Kim , Chuck Jang
IPC分类号： H01L21/762 , H01L29/00 , H01L21/8238
CPC分类号： H01L21/76229
摘要： A method and structure to form shallow trench isolation regions without trench oxide grooving is provided. In particular, a method includes a two-step oxide process in which an oxide liner lines the inside surface of a trench and the trench is filled with a bulk oxide layer, preferably using a high density plasma chemical vapor deposition (HDP-CVD) process. The oxide liner and the bulk oxide layer are formed to have similar etch rates. Thus, when etching the oxide liner and the bulk oxide layer between stack structures, a common dielectric top surface is formed that is substantially planar and without grooves.

42. 发明申请

US20050054141A1 Thin semiconductor package having stackable lead frame and method of manufacturing the same 失效
标题翻译：具有可堆叠引线框的薄型半导体封装及其制造方法
公开(公告)号：US20050054141A1
公开(公告)日：2005-03-10
申请号：US10834187
申请日：2004-04-29
申请人： Jin-Ho Kim , Sung-Hwan Yoon
发明人： Jin-Ho Kim , Sung-Hwan Yoon
IPC分类号： H01L23/12 , H01L21/44 , H01L23/31 , H01L23/495 , H01L25/10
CPC分类号： H01L23/4951 , H01L23/3107 , H01L23/49551 , H01L24/48 , H01L25/105 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/4826 , H01L2224/73215 , H01L2225/1029 , H01L2225/1058 , H01L2924/00014 , H01L2924/01079 , H01L2924/07802 , Y10T428/24207 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Provided is a thin semiconductor package comprising a semiconductor chip and a lead frame, the lead frame including a paddle portion configured for mounting the semiconductor chip in a manner that exposes bonding pads within an aperture formed in a center portion of the lead frame and a peripheral terminal pad portion for establishing external contacts. A plurality of bonding wires are used to establish electrical connection between a lower surface of the paddle part and corresponding bonding pads with intermediate leads providing connection to the terminal pad portions. The semiconductor chip, lead frame and bonding wires may then be encapsulated to form a thin semiconductor package having a thickness substantially equal to that of the terminal pad portions. The thin semiconductor packages may, in turn, be used to form multi-chip stack packages using known good semiconductor chips to form a high-density compound semiconductor packages.
摘要翻译：提供了一种薄半导体封装，其包括半导体芯片和引线框架，该引线框架包括：配置用于以形成在引线框的中心部分中的孔内露出焊盘的方式安装半导体芯片的桨形部分，端子焊盘部分，用于建立外部触点。多个接合线用于在桨形部分的下表面和相应的接合焊盘之间建立电连接，中间引线提供与端子焊盘部分的连接。然后可以将半导体芯片，引线框和接合线封装成具有基本上等于端子焊盘部分的厚度的薄的半导体封装。薄的半导体封装又可以用于使用已知的良好半导体芯片形成多芯片堆叠封装以形成高密度化合物半导体封装。

43. 发明申请

US20050045921A1 Semiconductor device having LDD-type source/drain regions and fabrication method thereof 有权
标题翻译：具有LDD型源极/漏极区域的半导体器件及其制造方法
公开(公告)号：US20050045921A1
公开(公告)日：2005-03-03
申请号：US10948883
申请日：2004-09-24
申请人： Do-Hyung Kim , Jin-Ho Kim , Byung-Jun Hwang
发明人： Do-Hyung Kim , Jin-Ho Kim , Byung-Jun Hwang
IPC分类号： H01L21/336 , H01L21/768 , H01L21/8234 , H01L21/8238 , H01L21/8244 , H01L27/092 , H01L27/11 , H01L29/78 , H01L29/06
CPC分类号： H01L29/6653 , H01L21/76801 , H01L21/76832 , H01L21/76837 , H01L21/76895 , H01L21/823425 , H01L29/6659
摘要： A semiconductor device having LDD-type source/drain regions and a method of fabricating the same are provided. The semiconductor device includes at least a pair of gate patterns disposed on a semiconductor substrate and LDD-type source/drain regions disposed at both sides of the gate patterns. The substrate having the gate patterns and the LDD-type source/drain regions is covered with a conformal etch stop layer. The etch stop layer is covered with an interlayer insulating layer. The LDD-type source/drain region is exposed by a contact hole that penetrates the interlayer insulating layer and the etch stop layer. The method of forming the LDD-type source/drain regions and the etch stop layer includes forming low-concentration source/drain regions at both sides of the gate patterns and forming the conformal etch stop layer on the substrate having the low-concentration source/drain regions. Gate spacers are then formed on the sidewalls of the gate patterns. Using the gate patterns and the gate spacers as implantation masks, impurity ions are implanted into the semiconductor substrate to form high-concentration source/drain regions. The spacers are then selectively removed. An interlayer insulating layer is formed on the substrate where the spacers are removed.
摘要翻译：提供具有LDD型源极/漏极区域的半导体器件及其制造方法。半导体器件包括设置在半导体衬底上的至少一对栅极图案和设置在栅极图案两侧的LDD型源极/漏极区域。具有栅极图案和LDD型源极/漏极区域的衬底被保形蚀刻停止层覆盖。蚀刻停止层被层间绝缘层覆盖。 LDD型源极/漏极区域通过穿透层间绝缘层和蚀刻停止层的接触孔露出。形成LDD型源极/漏极区域和蚀刻停止层的方法包括在栅极图案的两侧形成低浓度源极/漏极区域，并在具有低浓度源/漏极区域的衬底上形成保形蚀刻停止层，漏区。然后在栅极图案的侧壁上形成栅极间隔物。使用栅极图案和栅极间隔物作为注入掩模，将杂质离子注入到半导体衬底中以形成高浓度源极/漏极区域。然后选择性地去除间隔物。在基板上形成层间绝缘层，其中隔离物被去除。

44. 发明申请

US20050039944A1 Non-solder mask defined (NSMD) type wiring substrate for ball grid array (BGA) package and method for manufacturing such a wiring substrate 有权
标题翻译：用于球栅阵列（BGA）封装的非阻焊掩模型（NSMD）型布线基板及其制造方法
公开(公告)号：US20050039944A1
公开(公告)日：2005-02-24
申请号：US10850864
申请日：2004-05-21
申请人： Jin-Ho Kim , In-Ku Kang , Hee-Kook Choi
发明人： Jin-Ho Kim , In-Ku Kang , Hee-Kook Choi
IPC分类号： H01L23/48 , H05K3/24 , H05K3/34 , H05K1/09 , H05K1/02
CPC分类号： H05K3/3452 , H01L2224/10 , H05K3/243 , H05K2201/0989 , H05K2201/10734 , H05K2203/0577 , H05K2203/058
摘要： In one embodiment, a pad is formed on a substrate surface. The pad is connected with a connecting pattern. A first mask is formed on the substrate. The first mask has a first opening exposing at least a portion of the pad and a portion of the connecting pattern. A second mask is formed on the first mask. The second mask has a second opening exposing at least a portion of the pad and a portion of the connecting pattern. A boundary surface or sidewall of the first opening is not coplanar with a boundary surface or sidewall of the second opening. Therefore, stresses may be prevented from concentrating on the boundary surface of the first opening, thereby allowing dispersion of the stresses and restraining pattern cracks.
摘要翻译：在一个实施例中，衬垫形成在衬底表面上。垫与连接图案连接。在基板上形成第一掩模。第一掩模具有暴露焊盘的至少一部分和连接图案的一部分的第一开口。在第一掩模上形成第二掩模。第二掩模具有暴露焊盘的至少一部分和连接图案的一部分的第二开口。第一开口的边界面或侧壁不与第二开口的边界面或侧壁共面。因此，可以防止应力集中在第一开口的边界面上，从而允许应力分散和约束图案裂纹。

45. 发明授权

US09230500B2 Expanded 3D stereoscopic display system 有权
标题翻译：扩展3D立体显示系统
公开(公告)号：US09230500B2
公开(公告)日：2016-01-05
申请号：US13565421
申请日：2012-08-02
申请人： Ung-Yeon Yang , Hye-Mi Kim , Jin-Ho Kim , Ki-Hong Kim , Gil-Haeng Lee
发明人： Ung-Yeon Yang , Hye-Mi Kim , Jin-Ho Kim , Ki-Hong Kim , Gil-Haeng Lee
IPC分类号： H04N13/02 , G09G5/00 , H04N13/00 , H04N13/04
CPC分类号： G09G5/00 , H04N13/161 , H04N13/243 , H04N13/363 , H04N13/383
摘要： An expanded three-dimensional (3D) stereoscopic image display system is provided. The expanded 3D stereoscopic image display system according to an embodiment of the present invention provides a display platform that presents integrated services by fusing homogeneous and heterogeneous display devices in a single space, and an operation technique of the display platform.
摘要翻译：提供了一种扩展的立体（3D）立体图像显示系统。根据本发明的实施例的扩展的3D立体图像显示系统提供了通过在单个空间中融合均匀和异质显示设备来呈现综合服务的显示平台以及显示平台的操作技术。

46. 发明授权

US09059826B2 Apparatus and method for transmitting and receiving channel state information reference symbol in relay network system 有权
标题翻译：中继网络系统中发送和接收信道状态信息参考符号的装置和方法
公开(公告)号：US09059826B2
公开(公告)日：2015-06-16
申请号：US13027767
申请日：2011-02-15
申请人： Jung-Su Han , Hi-Chan Moon , Joon-Young Cho , Jun-Sung Lim , Jin-Ho Kim
发明人： Jung-Su Han , Hi-Chan Moon , Joon-Young Cho , Jun-Sung Lim , Jin-Ho Kim
IPC分类号： H04L5/00 , H04W72/12 , H04W84/04
CPC分类号： H04L5/0048 , H04L5/0023 , H04L5/0053 , H04W72/1273 , H04W84/047
摘要： An apparatus and method for transmitting/receiving a Channel State Information-Reference Symbol (CSI-RS) in a relay network system are provided. The method for transmitting a CSI-RS in a relay network system includes selecting a subframe to transmit a CSI-RS, from DownLink (DL) subframes, transmitting, to a receive end, identifying information indicating that a CSI-RS is transmitted at the selected subframe, and transmitting a CSI-RS at the selected subframe.
摘要翻译：提供了一种用于在中继网络系统中发送/接收信道状态信息参考符号（CSI-RS）的装置和方法。在中继网络系统中发送CSI-RS的方法包括从DownLink（DL）子帧中选择发送CSI-RS的子帧，向接收端发送指示CSI-RS在该接收端发送的识别信息并且在所选择的子帧处发送CSI-RS。

47. 发明授权

US08810624B2 Apparatus and method for configuring screen for video call using facial expression 有权
标题翻译：使用面部表情配置视频通话屏幕的装置和方法
公开(公告)号：US08810624B2
公开(公告)日：2014-08-19
申请号：US13293720
申请日：2011-11-10
申请人： Ji-Young Yi , Sung-Dae Cho , Kee-Hyon Park , Jong-Man Kim , Jin-Ho Kim , Chul-Hwan Lee , Dong-Hoon Jang
发明人： Ji-Young Yi , Sung-Dae Cho , Kee-Hyon Park , Jong-Man Kim , Jin-Ho Kim , Chul-Hwan Lee , Dong-Hoon Jang
IPC分类号： H04N7/14
CPC分类号： G06K9/00302 , G06F3/0481 , G06F3/04842 , H04N7/14 , H04N7/141
摘要： Apparatus and method for configuring a screen for a video call using a facial expression by recognizing a face from an image, calculating facial expression information for an expression of the recognized face, and determining whether there is a change in expression of the recognized face by comparing the calculated facial expression information with reference expression information preset to determine a change in expression of the face. If there is a change in expression of the recognized face, the apparatus and method selects a video image corresponding to the changed expression in the video call screen, and reconfigures the video call screen using the selected video image, making it possible for a user to conveniently select an image of the interested person without taking extensive action, and preventing a wrong image from being selected due to the unintended user facial movement.
摘要翻译：用于通过识别来自图像的面部来使用面部表情来配置用于视频通话的屏幕的装置和方法，计算所识别的面部的表达的面部表情信息，以及通过比较来确定所识别的脸部的表达是否变化所述计算出的面部表情信息具有预设的参考表达信息，以确定脸部表情的变化。如果所识别的脸部的表达方式发生变化，则该装置和方法选择与视频呼叫屏幕中的改变表达式对应的视频图像，并且使用所选择的视频图像重新配置视频通话屏幕，使得用户可以方便地选择感兴趣的人的图像而不采取广泛的动作，并且由于意外的用户面部运动而防止错误的图像被选择。

48. 发明申请

US20140167291A1 SEMICONDUCTOR PACKAGE HAVING SUPPORTING PLATE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：具有支撑板的半导体封装及其形成方法
公开(公告)号：US20140167291A1
公开(公告)日：2014-06-19
申请号：US14184951
申请日：2014-02-20
申请人： Tae-Duk Nam , Jin-Ho Kim , Hyuk-Su Kim , Hyoung-Suk Kim , Tae-Young Lee
发明人： Tae-Duk Nam , Jin-Ho Kim , Hyuk-Su Kim , Hyoung-Suk Kim , Tae-Young Lee
IPC分类号： H01L25/065
CPC分类号： H01L25/0657 , H01L23/3128 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/18 , H01L25/50 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/16265 , H01L2224/291 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/32265 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06562 , H01L2924/01013 , H01L2924/1434 , H01L2924/1436 , H01L2924/1437 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19103 , H01L2924/19105 , H01L2924/014 , H01L2224/85 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： A semiconductor package may include a packaging substrate, a first semiconductor chip on the packaging substrate, and a support plate on the packaging substrate. The support plate may be spaced apart from the first semiconductor chip in a direction parallel with respect to a surface of the packaging substrate. A second semiconductor chip may be provided on the first semiconductor chip and on the support plate so that the first semiconductor chip is between the second semiconductor chip and the packaging substrate and so that the support plate is between the second semiconductor chip and the packaging substrate. An adhesion layer may bond the second semiconductor chip to the first semiconductor chip and may bond the second semiconductor chip to the support plate. In addition, an electrical coupling may be provided between the first semiconductor chip and the packaging substrate.
摘要翻译：半导体封装可以包括封装衬底，封装衬底上的第一半导体芯片，以及封装衬底上的支撑板。支撑板可以在相对于包装基板的表面平行的方向上与第一半导体芯片间隔开。可以在第一半导体芯片和支撑板上设置第二半导体芯片，使得第一半导体芯片在第二半导体芯片和封装基板之间，并且支撑板位于第二半导体芯片和封装基板之间。粘合层可以将第二半导体芯片接合到第一半导体芯片，并且可以将第二半导体芯片接合到支撑板。此外，可以在第一半导体芯片和封装基板之间设置电耦合。

49. 发明授权

US08585391B2 Photomask cleaning apparatus and methods of cleaning a photomask using the same 有权
标题翻译：光掩模清洁装置和使用其的光掩模的清洁方法
公开(公告)号：US08585391B2
公开(公告)日：2013-11-19
申请号：US13238805
申请日：2011-09-21
申请人： Jin-Ho Kim , Yo-Han Ahn , Jeong-In Yoon , Ji-Young Kim
发明人： Jin-Ho Kim , Yo-Han Ahn , Jeong-In Yoon , Ji-Young Kim
IPC分类号： G03F1/82 , G03F1/62
CPC分类号： G03F1/64 , B08B7/0042 , B23K26/0006 , B23K26/032 , B23K26/0622 , B23K26/142 , B23K26/352 , B23K26/361 , B23K2103/56 , G03F1/82
摘要： A photomask cleaning apparatus includes a photomask receiving stage and a laser supply unit. The photomask receiving stage is configured to receive and retain a photomask in a desired orientation. The photomask has a front face having a pellicle adhesive residue region thereon. The desired orientation is with the front face positioned to allow gravity to move particles on the front face away from the front face without interference from the front face of the photomask. The laser supply unit is configured to generate a laser beam that irradiates a target region on the front face of the photomask to remove a pellicle adhesive residue from the target region. The photomask cleaning apparatus is configured to move the target region on the front face of the photomask to irradiate the entire pellicle adhesive residue region. Methods of using the photomask cleaning apparatus are also provided.
摘要翻译：光掩模清洁装置包括光掩模接收台和激光供给单元。光掩模接收台被配置为以期望的方向接收和保持光掩模。光掩模具有在其上具有防护薄膜粘合剂残留区域的前表面。期望的取向是将前表面定位成允许重力将前表面上的颗粒移动远离前表面，而不会受到光掩模前表面的干扰。激光供给单元被配置为产生照射光掩模的前表面上的目标区域以从目标区域去除防护薄膜组合物残留物的激光束。光掩模清洁装置被配置为移动光掩模的前表面上的目标区域以照射整个防粘膜残留区域。还提供了使用光掩模清洁装置的方法。

50. 发明申请

US20130180454A1 THIN FILM DEPOSITION APPARATUS 审中-公开
标题翻译：薄膜沉积装置
公开(公告)号：US20130180454A1
公开(公告)日：2013-07-18
申请号：US13823846
申请日：2011-09-16
申请人： Sang-Joon Park , Jin-Ho Kim , Byung-Guk Son
发明人： Sang-Joon Park , Jin-Ho Kim , Byung-Guk Son
IPC分类号： C23C16/455
CPC分类号： C23C16/455 , C23C16/303 , C23C16/45508 , C23C16/45514 , H01L21/02538 , H01L21/0262
摘要： Provided is a thin film deposition apparatus which comprises a chamber, a susceptor, a source gas supply part, and a susceptor support. The chamber has an inner space in which a deposition process is performed. The susceptor is disposed within the chamber to directly support a plurality of substrates along a circumference of a center of a top surface or support a substrate holder on which at least one substrate is disposed. The source gas supply part supplies first and second source gases into a central portion of an upper side of the susceptor in a state where the first and second gases are separated from each other. Also, the source gas supply part respectively injects the first and second source gases separated from each other toward a circumference of the susceptor through vertically arranged source gas injection holes to supply the first and second source gases onto the substrates disposed on the susceptor. The susceptor support is configured to support a center of the susceptor from a lower side of the susceptor. Also, the susceptor support includes an additional gas supply part for injecting an additional gas introduced from the outside onto a top surface of the susceptor.
摘要翻译：提供一种薄膜沉积设备，其包括室，基座，源气体供应部分和基座支撑件。该腔室具有进行沉积处理的内部空间。基座设置在室内以沿着顶表面的中心的圆周直接支撑多个基板，或支撑其上设置有至少一个基板的基板保持器。源气体供给部在第一气体和第二气体彼此分离的状态下将第一源气体和第二源气体供给到基座的上侧的中央部。另外，原料气体供给部分通过垂直排列的原料气体注入孔分别将彼此分离的第一和第二源气体朝向基座的圆周喷射，以将第一和第二源气体提供到设置在基座上的基板上。基座支撑构造成从基座的下侧支撑基座的中心。此外，基座支架包括用于将从外部引入的附加气体注入到基座的顶表面上的附加气体供应部件。

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