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41. 发明授权

US07751330B2 Method and apparatus for dynamically managing hierarchical flows 失效
标题翻译：动态管理分层流的方法和装置
公开(公告)号：US07751330B2
公开(公告)日：2010-07-06
申请号：US12079046
申请日：2008-03-24
申请人： Bhum-cheol Lee , Jung-hee Lee , Hyun-yong Hwang , Dae-geun Park , Seung-woo Lee , Young-ho Park , Kyung-pyo Jun , Young-sun Kim
发明人： Bhum-cheol Lee , Jung-hee Lee , Hyun-yong Hwang , Dae-geun Park , Seung-woo Lee , Young-ho Park , Kyung-pyo Jun , Young-sun Kim
IPC分类号： H04L1/00
CPC分类号： H04L47/10 , H04L47/20 , H04L47/2441 , H04L47/31 , H04L47/32
摘要： Provided are a method and apparatus for dynamically managing hierarchical flows that more efficiently process packet traffic while maintaining compatibility with an existing packet data network in transferring both circuit traffic and packet traffic in a packet switched network. The method for dynamically managing hierarchical flows includes: receiving data packets, classifying the data packets according to attributes of the received data packets, and producing first flows; determining whether traffic of each of the first flows exceeds a predetermined bandwidth limit, and performing a packet drop process or producing second flows for first flows that exceed the bandwidth limit, according to a flow-specific policy; and performing second flow processing on the second flows according to a second flow policy. Only flows exceeding the bandwidth limit or causing congestion are hierarchically divided for management. This makes it possible to finely manage the flows without complex operations.
摘要翻译：提供了一种用于动态管理分层流的方法和装置，其更有效地处理分组业务，同时保持与现有分组数据网络的兼容性，以在分组交换网络中传送电路业务和分组业务。动态管理分层流的方法包括：接收数据包，根据接收到的数据包的属性对数据包进行分类，并产生第一个流; 确定每个第一流的流量是否超过预定带宽限制，并且根据流特定策略执行分组丢弃处理或产生超过带宽限制的第一流的第二流; 以及根据第二流策略对所述第二流执行第二流处理。只有超过带宽限制或引起拥塞的流量才被分层划分以进行管理。这使得可以在没有复杂操作的情况下精细地管理流。

42. 发明授权

US07723770B2 Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions 有权
标题翻译：集成电路电容器，其中包含结晶抑制区的复合介电层
公开(公告)号：US07723770B2
公开(公告)日：2010-05-25
申请号：US11210332
申请日：2005-08-24
申请人： Jae-hyoung Choi , Jung-hee Chung , Cha-young Yoo , Young-sun Kim , Se-hoon Oh
发明人： Jae-hyoung Choi , Jung-hee Chung , Cha-young Yoo , Young-sun Kim , Se-hoon Oh
IPC分类号： H01L27/108
CPC分类号： H01L29/92 , H01L27/10852 , H01L28/40
摘要： Integrated circuit capacitors have composite dielectric layers therein. These composite dielectric layers include crystallization inhibiting regions that operate to increase the overall crystallization temperature of the composite dielectric layer. An integrated circuit capacitor includes first and second capacitor electrodes and a capacitor dielectric layer extending between the first and second capacitor electrodes. The capacitor dielectric layer includes a composite of a first dielectric layer extending adjacent the first capacitor electrode, a second dielectric layer extending adjacent the second capacitor electrode and an electrically insulating crystallization inhibiting layer extending between the first and second dielectric layers. The electrically insulating crystallization inhibiting layer is formed of a material having a higher crystallization temperature characteristic relative to the first and second dielectric layers.
摘要翻译：集成电路电容器在其中具有复合电介质层。这些复合电介质层包括用于增加复合介电层的整体结晶温度的结晶抑制区。集成电路电容器包括第一和第二电容器电极和在第一和第二电容器电极之间延伸的电容器介电层。电容器介电层包括邻近第一电容器电极延伸的第一电介质层，邻近第二电容器电极延伸的第二电介质层和在第一和第二电介质层之间延伸的电绝缘的结晶抑制层的复合材料。电绝缘结晶抑制层由相对于第一和第二介电层具有较高结晶温度特性的材料形成。

43. 发明申请

US20100117194A1 METAL-INSULATOR-METAL CAPACITORS WITH A CHEMICAL BARRIER LAYER IN A LOWER ELECTRODE 审中-公开
标题翻译：金属绝缘体 - 金属电容器，在较低的电极中具有化学障碍层
公开(公告)号：US20100117194A1
公开(公告)日：2010-05-13
申请号：US12639184
申请日：2009-12-16
申请人： Eun-ae Chung , Jae-hyoung Choi , Jung-hee Chung , Young-sun Kim , Cha-young Yoo
发明人： Eun-ae Chung , Jae-hyoung Choi , Jung-hee Chung , Young-sun Kim , Cha-young Yoo
IPC分类号： H01L29/92 , H01G4/06 , H01G4/008
CPC分类号： H01L21/7687 , H01L27/10852 , H01L28/65 , H01L28/75
摘要： A metal-insulator-metal (MIM) capacitor includes a lower electrode, a dielectric layer, and an upper electrode. The lower electrode includes a first conductive layer, a chemical barrier layer on the first conductive layer, and a second conductive layer on the chemical barrier layer. The chemical barrier layer is between the first and second conductive layers and is a different material than the first and second conductive layers. The dielectric layer is on the lower electrode. The upper electrode is on the dielectric layer opposite to the lower electrode. The first and second conductive layers can have the same thickness. The chemical barrier layer can be thinner than each of the first and second conductive layers. Related methods are discussed.
摘要翻译：金属绝缘体金属（MIM）电容器包括下电极，电介质层和上电极。下电极包括第一导电层，第一导电层上的化学阻挡层和化学阻挡层上的第二导电层。化学屏障层位于第一和第二导电层之间，并且是与第一和第二导电层不同的材料。介电层位于下电极上。上电极位于与下电极相对的电介质层上。第一和第二导电层可以具有相同的厚度。化学阻挡层可以比第一和第二导电层中的每一个薄。讨论相关方法。

44. 发明授权

US07531861B2 Trench capacitors with insulating layer collars in undercut regions 失效
标题翻译：带有绝缘层的沟槽电容器在底切区域
公开(公告)号：US07531861B2
公开(公告)日：2009-05-12
申请号：US12033065
申请日：2008-02-19
申请人： Suk-jin Chung , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim , Jae-soon Lim , Young-geun Park
发明人： Suk-jin Chung , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim , Jae-soon Lim , Young-geun Park
IPC分类号： H01L29/94
CPC分类号： H01L27/10867 , H01L27/10829 , H01L27/1087 , H01L29/66181 , H01L29/945
摘要： Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
摘要翻译：提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。制造沟槽电容器的一些方法包括在衬底上形成第一层。在与衬底相对的第一层上形成第二层。形成在第一和第二层的顶部上具有开口的掩模。通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。除去第二层下面的第一层的一部分，以在第二层下形成底切区域。在第二层下方的底切区域中形成绝缘层套环。形成第二沟槽，其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。掩埋板沿着第二沟槽形成在衬底中。介电层形成在第二沟槽的内壁和底部上。在电介质层上的第二沟槽中形成存储电极。

45. 发明授权

US07510931B2 Method of fabricating a nonvolatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US07510931B2
公开(公告)日：2009-03-31
申请号：US11605452
申请日：2006-11-29
申请人： Ki-yeon Park , Han-mei Choi , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim
发明人： Ki-yeon Park , Han-mei Choi , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim
IPC分类号： H01L21/336 , H01L21/8238 , H01L21/4763
CPC分类号： H01L29/792 , H01L21/02178 , H01L21/0228 , H01L21/3143 , H01L21/31604 , H01L21/3162 , H01L29/513 , H01L29/66833
摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a first charge blocking layer on the charge trapping layer by supplying a metal source gas and a first oxidizing gas onto the charge trapping layer, forming a second charge blocking layer on the first charge blocking layer by supplying a metal source gas and a second oxidizing gas onto the first charge blocking layer, wherein the second oxidizing gas has a higher oxidizing power as compared to the first oxidizing gas, and forming a gate electrode layer on the second charge blocking layer.
摘要翻译：一种制造非易失性存储器件的方法包括：在半导体衬底上形成电荷隧穿层，在电荷隧道层上形成电荷俘获层，在电荷俘获层上形成第一电荷阻挡层，通过提供金属源气体和第一在电荷捕获层上氧化气体，通过在第一电荷阻挡层上提供金属源气体和第二氧化气体，在第一电荷阻挡层上形成第二电荷阻挡层，其中第二氧化气体具有较高的氧化能力，并且在第二电荷阻挡层上形成栅极电极层。

46. 发明申请

US20090040929A1 Method and apparatus for dynamically managing hierarchical flows 失效
标题翻译：动态管理分层流的方法和装置
公开(公告)号：US20090040929A1
公开(公告)日：2009-02-12
申请号：US12079046
申请日：2008-03-24
申请人： Bhum-cheol Lee , Jung-hee Lee , Hyun-yong Hwang , Dae-geun Park , Seung-woo Lee , Young-ho Park , Kyung-pyo Jun , Young-sun Kim
发明人： Bhum-cheol Lee , Jung-hee Lee , Hyun-yong Hwang , Dae-geun Park , Seung-woo Lee , Young-ho Park , Kyung-pyo Jun , Young-sun Kim
IPC分类号： H04L12/56
CPC分类号： H04L47/10 , H04L47/20 , H04L47/2441 , H04L47/31 , H04L47/32
摘要： Provided are a method and apparatus for dynamically managing hierarchical flows that more efficiently process packet traffic while maintaining compatibility with an existing packet data network in transferring both circuit traffic and packet traffic in a packet switched network. The method for dynamically managing hierarchical flows includes: receiving data packets, classifying the data packets according to attributes of the received data packets, and producing first flows; determining whether traffic of each of the first flows exceeds a predetermined bandwidth limit, and performing a packet drop process or producing second flows for first flows that exceed the bandwidth limit, according to a flow-specific policy; and performing second flow processing on the second flows according to a second flow policy. Only flows exceeding the bandwidth limit or causing congestion are hierarchically divided for management. This makes it possible to finely manage the flows without complex operations.
摘要翻译：提供了一种用于动态管理分层流的方法和装置，其更有效地处理分组业务，同时保持与现有分组数据网络的兼容性，以在分组交换网络中传送电路业务和分组业务。动态管理分层流的方法包括：接收数据包，根据接收到的数据包的属性对数据包进行分类，并产生第一个流; 确定每个第一流的流量是否超过预定带宽限制，并且根据流特定策略执行分组丢弃处理或产生超过带宽限制的第一流的第二流; 以及根据第二流策略对所述第二流执行第二流处理。只有超过带宽限制或引起拥塞的流量才被分层划分以进行管理。这使得可以在没有复杂操作的情况下精细地管理流。

47. 发明授权

US07422943B2 Semiconductor device capacitors with oxide-nitride layers and methods of fabricating such capacitors 有权
标题翻译：具有氧化物氮化物层的半导体器件电容器和制造这种电容器的方法
公开(公告)号：US07422943B2
公开(公告)日：2008-09-09
申请号：US11386660
申请日：2006-03-22
申请人： Jong-cheol Lee , Young-sun Kim , Jung-hee Chung , Jae-hyoung Choi , Se-hoon Oh , Hong-bum Park
发明人： Jong-cheol Lee , Young-sun Kim , Jung-hee Chung , Jae-hyoung Choi , Se-hoon Oh , Hong-bum Park
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/75
摘要： Capacitors having upper electrodes that include a lower electrode, a dielectric layer and an upper electrode that includes a conductive metal nitride layer and a doped polysilicon germanium layer are provided. At least part of the conductive metal nitride layer is oxidized and/or at least part of the dielectric layer is nitridized.
摘要翻译：提供具有包括下电极，电介质层和包括导电金属氮化物层和掺杂多晶硅锗层的上电极的上电极的电容器。导电金属氮化物层的至少一部分被氧化和/或至少部分介电层被氮化。

48. 发明授权

US07396719B2 Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film 有权
标题翻译：使用原子层沉积形成高电介质膜的方法和制造具有高电介质膜的电容器的方法
公开(公告)号：US07396719B2
公开(公告)日：2008-07-08
申请号：US10873256
申请日：2004-06-23
申请人： Kyoung-seok Kim , Hong-bae Park , Bong-hyun Kim , Sung-tae Kim , Jong-wan Kwon , Jung-hyun Lee , Ki-chul Kim , Jae-soon Lim , Gab-jin Nam , Young-sun Kim
发明人： Kyoung-seok Kim , Hong-bae Park , Bong-hyun Kim , Sung-tae Kim , Jong-wan Kwon , Jung-hyun Lee , Ki-chul Kim , Jae-soon Lim , Gab-jin Nam , Young-sun Kim
IPC分类号： H01L21/471
CPC分类号： H01L21/0228 , C23C16/308 , C23C16/45531 , C23C16/56 , H01L21/02175 , H01L21/02181 , H01L21/02205 , H01L21/3141 , H01L21/3142 , H01L21/3143 , H01L21/31645
摘要： A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.
摘要翻译：使用原子层沉积（ALD）形成高电介质膜的方法以及制造具有高电介质膜的电容器的方法包括将含有金属元素的前体供应到半导体衬底并清洗反应器; 供应氧化剂并清洗反应器; 并供应含氮的反应源并清洗反应器。

49. 发明申请

US20080135876A1 TRENCH CAPACITORS WITH INSULATING LAYER COLLARS IN UNDERCUT REGIONS 失效
标题翻译：在内陆地区具有绝缘层的TRENCH电容器
公开(公告)号：US20080135876A1
公开(公告)日：2008-06-12
申请号：US12033065
申请日：2008-02-19
申请人： Suk-jin Chung , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim , Jae-soon Lim , Young-geun Park
发明人： Suk-jin Chung , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim , Jae-soon Lim , Young-geun Park
IPC分类号： H01L29/94
CPC分类号： H01L27/10867 , H01L27/10829 , H01L27/1087 , H01L29/66181 , H01L29/945
摘要： Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
摘要翻译：提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。制造沟槽电容器的一些方法包括在衬底上形成第一层。在与衬底相对的第一层上形成第二层。形成在第一和第二层的顶部上具有开口的掩模。通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。除去第二层下面的第一层的一部分，以在第二层下形成底切区域。在第二层下方的底切区域中形成绝缘层套环。形成第二沟槽，其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。掩埋板沿着第二沟槽形成在衬底中。介电层形成在第二沟槽的内壁和底部上。在电介质层上的第二沟槽中形成存储电极。

50. 发明授权

US07354821B2 Methods of fabricating trench capacitors with insulating layer collars in undercut regions 失效
标题翻译：在底切区域制造具有绝缘层环的沟槽电容器的方法
公开(公告)号：US07354821B2
公开(公告)日：2008-04-08
申请号：US11037626
申请日：2005-01-18
申请人： Suk-jin Chung , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim , Jae-soon Lim , Young-geun Park
发明人： Suk-jin Chung , Seung-hwan Lee , Sung-tae Kim , Young-sun Kim , Jae-soon Lim , Young-geun Park
IPC分类号： H01L21/8242 , H01L21/336
CPC分类号： H01L27/10867 , H01L27/10829 , H01L27/1087 , H01L29/66181 , H01L29/945
摘要： Trench capacitors that have insulating layer collars in undercut regions and methods of fabricating such trench capacitors are provided. Some methods of fabricating a trench capacitor include forming a first layer on a substrate. A second layer is formed on the first layer opposite to the substrate. A mask is formed that has an opening on top of the first and second layers. A first trench is formed by removing a portion of the first and second layers through the opening in the mask. A portion of the first layer under the second layer is removed to form an undercut region under the second layer. An insulating layer collar is formed in the undercut region under the second layer. A second trench is formed that extends from the first trench by removing a portion of the substrate through the opening in the mask. A buried plate is formed in the substrate along the second trench. A dielectric layer is formed on an inner wall and bottom of the second trench. A storage electrode is formed in the second trench on the dielectric layer.
摘要翻译：提供了在底切区域中具有绝缘层套环的沟槽电容器和制造这种沟槽电容器的方法。制造沟槽电容器的一些方法包括在衬底上形成第一层。在与衬底相对的第一层上形成第二层。形成在第一和第二层的顶部上具有开口的掩模。通过从掩模中的开口去除第一层和第二层的一部分来形成第一沟槽。除去第二层下面的第一层的一部分，以在第二层下形成底切区域。在第二层下方的底切区域中形成绝缘层套环。形成第二沟槽，其通过从掩模中的开口去除衬底的一部分而从第一沟槽延伸。掩埋板沿着第二沟槽形成在衬底中。介电层形成在第二沟槽的内壁和底部上。在电介质层上的第二沟槽中形成存储电极。

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