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41. 发明授权

US08357892B2 Mass spectrometer 有权
标题翻译：质谱仪
公开(公告)号：US08357892B2
公开(公告)日：2013-01-22
申请号：US12730475
申请日：2010-03-24
申请人： Motohiro Suyama , Etsuo Iizuka , Akio Suzuki , Hiroshi Kobayashi
发明人： Motohiro Suyama , Etsuo Iizuka , Akio Suzuki , Hiroshi Kobayashi
IPC分类号： H01J49/40
CPC分类号： H01J49/40 , H01J49/025
摘要： A mass spectrometer that allows easy replacement of an MCP (microchannel plate) and is enabled to secure orthogonality between an incident surface of the MCP and an ion track at high accuracy is provided. A flight tube 2 where ions fly is arranged in a vacuum vessel composed of a vacuum flange 6 and a body 1, and an MCP group 4 is attached to a tail end of the flight tube 2 via an MCP-IN electrode 3. A vacuum flange 6 is attachably and detachably attached to the body 1, and the MCP group 4, by a spring 710 provided on a circuit board 7 for detection attached to the vacuum flange 6, is urged toward an end portion of the flight tube 2 so that its orthogonality with respect to an ion flight track is secured.
摘要翻译：提供了一种允许容易地更换MCP（微通道板）并且能够以高精度确保MCP的入射表面和离子轨道之间的正交性的质谱仪。离子飞行的飞行管2布置在由真空法兰6和主体1组成的真空容器中，并且MCP组4经由MCP-IN电极3附接到飞行管2的尾端。真空凸缘6可附接和可拆卸地附接到主体1，并且MCP组4通过设置在连接到真空凸缘6上的用于检测的电路板7上的弹簧710朝向飞行管2的端部被推动，使得其相对于离子飞行轨道的正交性得到保证。

42. 发明申请

US20100225221A1 ELECTRON MULTIPLER AND ELECTRON DETECTOR 有权
标题翻译：电子多路器和电子探测器
公开(公告)号：US20100225221A1
公开(公告)日：2010-09-09
申请号：US12715570
申请日：2010-03-02
申请人： Akio SUZUKI , Etsuo Iizuka , Akihiro Kageyama , Motohiro Suyama
发明人： Akio SUZUKI , Etsuo Iizuka , Akihiro Kageyama , Motohiro Suyama
IPC分类号： H01J43/06
CPC分类号： H01J43/246
摘要： An electron multiplier that can easily obtain characteristics according to a purpose is provided. By bonding a marginal portion 23 of an MCP 2 and a marginal portion 33 of an MCP 3 to each other via a conductive spacer layer 7, a gap 12 is formed between channel portions 22, 32. Therefore, when the electron multiplier is used for a purpose that requires a particularly high gain, by adjusting the thickness of the spacer layer 7, the gain can be increased by increasing the gap 12. In addition, when the electron multiplier is used for a purpose that requires an increase in gain as well as time characteristics, by adjusting the thickness of the spacer layer 7, the size of the gap 12 can be adjusted so that desired characteristics are obtained. Consequently, by only adjusting the thickness of the spacer layer 7, characteristics according to the purpose can be easily obtained.
摘要翻译：提供了可以容易地根据目的获得特性的电子倍增器。通过经由导电间隔层7将MCP2的边缘部分23和MCP 3的边缘部分33彼此结合，在通道部分22,32之间形成间隙12.因此，当电子倍增器用于通过调整间隔层7的厚度，需要特别高的增益的目的可以通过增加间隙12来增加增益。此外，当电子倍增器用于增加增益的目的时作为时间特性，通过调整间隔层7的厚度，可以调节间隙12的尺寸，从而获得期望的特性。因此，通过仅调整间隔层7的厚度，可以容易地获得根据目的的特性。

43. 发明授权

US5654536A Photomultiplier having a multilayer semiconductor device 失效
标题翻译：具有多层半导体器件的光电倍增管
公开(公告)号：US5654536A
公开(公告)日：1997-08-05
申请号：US557541
申请日：1995-11-14
申请人： Motohiro Suyama , Masaharu Muramatsu , Makoto Oishi , Yoshitaka Ishikawa , Koei Yamamoto
发明人： Motohiro Suyama , Masaharu Muramatsu , Makoto Oishi , Yoshitaka Ishikawa , Koei Yamamoto
IPC分类号： H01J43/04 , H01J43/12 , H01L31/107 , H01J40/14
CPC分类号： H01L31/1075 , H01J43/04 , H01J43/12
摘要： In a photomultiplier of the present invention, a semiconductor device arranged in an envelope to oppose a photocathode is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by opitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.
摘要翻译：在本发明的光电倍增器中，布置在外壳中以与光电阴极相对的半导体器件由第一导电类型的半导体衬底，不同于第一导电类型的第二导电类型的载流子倍增层构成，形成在所述半导体衬底上通过外延生长形成第二导电类型的击穿电压控制层，所述第二导电类型的击穿电压控制层形成在所述载体倍增层上并且具有高于载流子倍增层的掺杂剂浓度的第一绝缘层，控制层和所述载体倍增层，同时部分地暴露作为光电子的受体的击穿电压控制层的表面，并由氮化物和形成在击穿电压控制层的受体的外围表面部分上的欧姆电极层组成。当基于外延生长均匀地控制载体倍增层中的掺杂剂浓度分布时，提高入射在半导体器件的接收器上的不同位置处的光电子的雪崩倍增益的均匀性，从而大大提高能量分辨能力。

44. 发明授权

US5180908A Device for deriving a change of time-dependent information by converting the information to positional-dependent information 失效
标题翻译：通过将信息转换为与位置相关的信息来改变时间相关信息的设备
公开(公告)号：US5180908A
公开(公告)日：1993-01-19
申请号：US759292
申请日：1991-09-13
申请人： Motohiro Suyama
发明人： Motohiro Suyama
IPC分类号： G01J1/00 , G01J1/02 , G01T1/29 , G01T1/36 , H01J31/50
CPC分类号： H01J31/502
摘要： Time-dependent information such as light whose intensity varies with time is converted into positional information representing the change of the time-dependent information. A series of photoelectrons provided as the time-dependent information are accelerated or decelerated when passing through a region defined by first and second electrode to which a ramp voltage is applied so that the photoelectrons are accelerated or decelerated and are released at speeds varying depending on times. A speed analyzer analyzes the speeds of the photoelectrons and provides the positional information. The positional information is applied to a phosphor screen on which the positions of the photoelectrons applied thereto are displayed. The positions thereof represents the times involved with the photoelectrons.

45. 发明授权

US5168164A Optical waveform measuring device 失效
标题翻译：光学波形测量装置
公开(公告)号：US5168164A
公开(公告)日：1992-12-01
申请号：US858861
申请日：1992-03-27
申请人： Tsuneyuki Urakami , Motohiro Suyama
发明人： Tsuneyuki Urakami , Motohiro Suyama
IPC分类号： G01J11/00
CPC分类号： G01J11/00
摘要： When sampling light and light to be measured each having a wavelength longer than an upper wavelength limit of the sensitivity of a photocathode are incident on the photocathode of a multiphoton absorption-type electron tube, light-light sampling is enabled by two-photon absorption and one-photoelectron emission. A delaying unit adjusts an incident timing of the sampling light from an optical pulse generating unit on the elctron tube in synchronism with an incident timing of the light to be measured on the electron tube. A half mirror causes the sampling light and the light to be measured to coincide on the photocathode of the electron tube. A controlling unit controls the delaying unit to sequentially shift the incident timing of the sampling light on the electron tube. Thus, the operation of a display unit can be controlled in synchronism with the incident timing of the sampling light so that a series of sampling outputs from the electron tube can be converted to the optical waveform of the light to be measured and displayed on the display unit.

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