会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Photomultiplier having a multilayer semiconductor device
    • 具有多层半导体器件的光电倍增管
    • US5654536A
    • 1997-08-05
    • US557541
    • 1995-11-14
    • Motohiro SuyamaMasaharu MuramatsuMakoto OishiYoshitaka IshikawaKoei Yamamoto
    • Motohiro SuyamaMasaharu MuramatsuMakoto OishiYoshitaka IshikawaKoei Yamamoto
    • H01J43/04H01J43/12H01L31/107H01J40/14
    • H01L31/1075H01J43/04H01J43/12
    • In a photomultiplier of the present invention, a semiconductor device arranged in an envelope to oppose a photocathode is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by opitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.
    • 在本发明的光电倍增器中,布置在外壳中以与光电阴极相对的半导体器件由第一导电类型的半导体衬底,不同于第一导电类型的第二导电类型的载流子倍增层构成,形成 在所述半导体衬底上通过外延生长形成第二导电类型的击穿电压控制层,所述第二导电类型的击穿电压控制层形成在所述载体倍增层上并且具有高于载流子倍增层的掺杂剂浓度的第一绝缘层, 控制层和所述载体倍增层,同时部分地暴露作为光电子的受体的击穿电压控制层的表面,并由氮化物和形成在击穿电压控制层的受体的外围表面部分上的欧姆电极层组成。 当基于外延生长均匀地控制载体倍增层中的掺杂剂浓度分布时,提高入射在半导体器件的接收器上的不同位置处的光电子的雪崩倍增益的均匀性,从而大大提高能量分辨能力 。
    • 2. 发明授权
    • Photoelectric tube using electron beam irradiation diode as anode
    • 光电管采用电子束照射二极管作为阳极
    • US5780913A
    • 1998-07-14
    • US954616
    • 1997-10-27
    • Masaharu MuramatsuMotohiro SuyamaKoei Yamamoto
    • Masaharu MuramatsuMotohiro SuyamaKoei Yamamoto
    • H01J31/49H01L31/115
    • H01J31/49
    • When light is incident on the photoelectric surface of this electron tube, photoelectrons are emitted. These photoelectrons are accelerated and incident on an electron beam irradiation diode. A reverse voltage of about 100 V is applied to the electron beam irradiation diode to form a depletion region almost throughout an anode layer and near the p-n junction interface of a silicon substrate. The incident accelerated electrons release a kinetic energy in a heavily doped p-type layer having an electron incidence surface and the depleted anode layer to form electron-hole pairs. In this case, since the heavily doped p-type layer having the electron incidence surface is very thin, the energy is hardly released in this layer, and almost all energy is released in the depletion region. Signal charges extracted from the electron-hole pairs formed upon releasing the energy are output as a signal from two electrodes.
    • 当光入射到该电子管的光电表面上时,发射光电子。 这些光电子被加速并入射在电子束照射二极管上。 大约100V的反向电压被施加到电子束照射二极管,以在整个阳极层和硅衬底的p-n结界面附近形成耗尽区。 事件加速电子在具有电子入射表面和耗尽的阳极层的重掺杂p型层中释放动能以形成电子 - 空穴对。 在这种情况下,由于具有电子入射面的重掺杂p型层非常薄,所以在该层中几乎不释放能量,几乎所有能量在耗尽区中释放。 从释放能量时形成的电子 - 空穴对提取的信号电荷作为来自两个电极的信号被输出。
    • 3. 发明授权
    • Electron tube
    • 电子管
    • US06586877B1
    • 2003-07-01
    • US09889605
    • 2001-07-19
    • Motohiro SuyamaAkihiro KageyamaMasaharu Muramatsu
    • Motohiro SuyamaAkihiro KageyamaMasaharu Muramatsu
    • H01J4000
    • H01J31/26H01J29/92H01J31/49H01J2229/922H01J2231/50068
    • In an electron tube 1, a space S between a periphery part 15b of a semiconductor device 15 and a stem 11 is filled with an insulating resin 20. The insulating resin 20 functions as a reinforcing member while the electron tube 1 is assembled under high-temperature condition, thereby preventing a bump 16 from coming off a bump connection portion 19. Since the space S is only partly closed by the resin 20, the space between the semiconductor device 15 and the stem 11 is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part 15a at the center of the semiconductor device 15 and the surface C of the stem 11, whereby air expanding at high temperature does not damage the electron incidence part 15a of the back-illuminated semiconductor device 15.
    • 在电子管1中,半导体器件15的周边部分15b和杆11之间的空间S填充有绝缘树脂20.绝缘树脂20用作加强构件,而电子管1组装在高温 从而防止突起16从凸起连接部分19脱落。由于空间S仅部分地被树脂20封闭,因此确保了半导体器件15与杆11之间的空间。 也就是说,在半导体器件15的中心处的电子入射部分15a和杆11的表面C之间没有形成空气储存器,由此在高温下膨胀的空气不会损坏背照射的电子入射部分15a 半导体器件15。
    • 4. 发明授权
    • Electron tube
    • 电子管
    • US06583558B1
    • 2003-06-24
    • US09868883
    • 2001-06-22
    • Motohiro SuyamaAkihiro KageyamaMasaharu Muramatsu
    • Motohiro SuyamaAkihiro KageyamaMasaharu Muramatsu
    • H01J4006
    • H01J29/44H01J31/26H01L2224/48091H01L2224/73265H01L2924/10155H01L2924/00014
    • An electron tube 10 mainly includes a sleeve 12, an input plate 14 having a photocathode surface 18, a stem 16 and a CCD 20. A vacuum is provided in an interior of the electron tube 10. The CCD 20 is fixed onto the stem such that a rear surface B faces the photocathode surface 18. In the CCD 20, on a single conductive type semiconductor substrate 64, a buried layer 66, a barrier region 68, a SiO2 layer 70, a storage electrode layer 72, a transmission electrode layer 74, and a barrier electrode layer 76 are formed at their predetermined positions. A PSG film 78 is formed at an entire front surface A over these layers to flatten the surface of the CCD 20. Further, SiN film 106 mainly composed of SiN is formed above the PSG film over the entire front surface A.
    • 电子管10主要包括套管12,具有光电阴极表面18的输入板14,杆16和CCD 20.在电子管10的内部设有真空。CCD 20固定在杆上 后表面B面对光电面表面18.在CCD 20中,在单个导电型半导体衬底64上,掩埋层66,势垒区68,SiO 2层70,存储电极层72,透射电极层 74和阻挡电极层76形成在其预定位置。 在这些层的整个前表面A上形成PSG膜78,以平坦化CCD 20的表面。此外,主要由SiN构成的SiN膜106在整个前表面A上形成在PSG膜的上方。
    • 6. 发明授权
    • Electron tube
    • 电子管
    • US08040060B2
    • 2011-10-18
    • US12257151
    • 2008-10-23
    • Atsuhito FukasawaYasuyuki EgawaMotohiro Suyama
    • Atsuhito FukasawaYasuyuki EgawaMotohiro Suyama
    • H01J40/06
    • H01J31/26H01J5/24H01J29/861H01J40/02H01J43/28
    • An electron tube of the present invention includes: a vacuum vessel including a side tube portion made of glass and a plate-like member blocking one opening of the side tube portion and made of glass; a first metal film provided on an end face of the side tube portion; a second metal film arranged facing the first metal film and provided on a marginal part of a face at a vacuum side of the plate-like member; a third metal film provided on at least one of an outer wall face of the side tube portion adjacent to the end face and a side face of the plate-like member adjacent to the marginal part; and a metal member made of a low-melting-point metal, for sealing a gap between the side tube portion and the plate-like member while contacting the first metal film, the second metal film, and the third metal film.
    • 本发明的电子管包括:真空容器,包括由玻璃制成的侧管部分和阻挡侧管部分的一个开口并由玻璃制成的板状部件; 设置在所述侧管部的端面上的第一金属膜; 第二金属膜,其布置成面对所述第一金属膜并且设置在所述板状构件的真空侧的面的边缘部分上; 设置在与端面相邻的侧管部分的外壁面中的至少一个上的第三金属膜和邻近边缘部分的板状构件的侧面; 以及由低熔点金属制成的金属构件,用于在与第一金属膜,第二金属膜和第三金属膜接触的同时密封侧管部和板状构件之间的间隙。
    • 8. 发明申请
    • Electron tube
    • 电子管
    • US20070069645A1
    • 2007-03-29
    • US10571007
    • 2004-09-09
    • Hiroyuki KyushimaMotohiro SuyamaSuenori KimuraYasiharu NegiAtsushi FukasawaYoshihiko KawaiAtsushi UchiyamaYasuyuki Egawa
    • Hiroyuki KyushimaMotohiro SuyamaSuenori KimuraYasiharu NegiAtsushi FukasawaYoshihiko KawaiAtsushi UchiyamaYasuyuki Egawa
    • H01J43/04
    • H01J40/16
    • An envelope (2) has a glass bulb body (4) and a cylindrical glass bulb base (5). The glass bulb body (4) includes an upper hemisphere (4a) and a lower hemisphere (4b). The upper hemisphere (4a) is curved in a substantially spherical shape. The lower hemisphere (4b) is substantially curved in a spherical shape and connects the upper hemisphere (4a) and glass bulb base (5). A photocathode (11) is formed on the inner surface of the glass bulb body (4). An avalanche photodiode (APD) (15) is disposed on the glass bulb body (4) side relative to an intersection (S) between an imaginary extended curved surface (I) of the lower hemisphere (4b) within the glass bulb base (5) and an axis (Z). When light enters the photocathode (11), electrons are emitted from the photocathode (11). The electrons are converged at the position above and in the vicinity of the APD (15) by an electrical field in the electron tube (1), so that the electrons enter the APD (15) in an efficient manner and are detected satisfactorily.
    • 信封(2)具有玻璃灯泡体(4)和圆柱形玻璃灯泡座(5)。 玻璃灯泡体(4)包括上半球(4a)和下半球(4b)。 上半球(4a)弯曲成大致球形。 下半球(4b)基本上弯曲成球形并连接上半球(4a)和玻璃球底座(5)。 在玻璃灯泡本体(4)的内表面上形成有光电阴极(11)。 雪崩光电二极管(APD)(15)相对于玻璃灯泡基座内的下半球体(4b)的假想延伸弯曲表面(I)之间的交点(S)设置在玻璃泡体(4)侧上 5)和轴(Z)。 当光进入光电阴极(11)时,从光电阴极(11)发射电子。 电子通过电子管(1)中的电场在APD(15)上方和附近的位置会聚,使得电子以有效的方式进入APD(15)并且被令人满意地检测。