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1. 发明授权

US10867768B2 Enhanced electron amplifier structure and method of fabricating the enhanced electron amplifier structure 有权
公开(公告)号：US10867768B2
公开(公告)日：2020-12-15
申请号：US15691633
申请日：2017-08-30
申请人： UCHICAGO ARGONNE, LLC
发明人： Anil U. Mane , Jeffrey W. Elam
IPC分类号： H01J1/32 , H01J9/12 , H01J43/24 , H01J43/04
CPC分类号： H01J1/32 , H01J9/125 , H01J43/04 , H01J43/246 , H01J2209/012
摘要： An enhanced electron amplifier structure includes a microporous substrate having a front surface and a rear surface, the microporous substrate including at least one channel extending substantially through the substrate between the front surface and the rear surface, an ion diffusion layer formed on a surface of the channel, the ion diffusion layer comprising a metal oxide, a resistive coating layer formed on the first ion diffusion layer, an emissive coating layer formed on the resistive coating layer, and an optional ion feedback layer formed on the front surface of the structure. The emissive coating produces a secondary electron emission responsive to an interaction with a particle received by the channel. The ion diffusion layer, the resistive coating layer, the emissive coating layer, and the ion feedback layer are independently deposited via chemical vapor deposition or atomic layer deposition.

2. 发明申请

US20150371835A1 PHOTOMULTIPLIER AND ITS MANUFACTURING METHOD 有权
标题翻译：照相机及其制造方法
公开(公告)号：US20150371835A1
公开(公告)日：2015-12-24
申请号：US14841886
申请日：2015-09-01
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Hiroyuki KYUSHIMA , Hideki SHIMOI , Akihiro KAGEYAMA , Keisuke INOUE , Masuo ITO
IPC分类号： H01J43/08 , H01J9/26
CPC分类号： H01J43/08 , H01J9/26 , H01J43/04 , H01J43/24
摘要： The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.
摘要翻译：本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极在电子倍增器部分中产生的电极被布置在外壳中。外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

3. 发明授权

US09184033B2 Electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure 有权
标题翻译：使用电子倍增的真空管中使用的电子倍增结构以及使用具有这种电子倍增结构的电子倍增的真空管
公开(公告)号：US09184033B2
公开(公告)日：2015-11-10
申请号：US13700185
申请日：2011-05-27
申请人： Gert Nützel , Pascal Lavoute , Richard Jackman
发明人： Gert Nützel , Pascal Lavoute , Richard Jackman
IPC分类号： H01J1/62 , H01J43/04 , H01J1/32 , H01J31/48 , H01J31/50 , H01J43/16
CPC分类号： H01J43/04 , H01J1/32 , H01J31/48 , H01J31/506 , H01J43/16
摘要： An electron multiplying structure for use in a vacuum tube using electron multiplying, the electron multiplying structure having an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube, wherein the electron multiplying structure at least is composed of a semi-conductor material layer adjacent the detection windows. Also disclosed is a vacuum tube using electron multiplying with an electron multiplying structure.
摘要翻译：一种用于使用电子倍增的真空管中的电子倍增结构，该电子倍增结构具有一个输入面，该输入面旨在以与真空管的入口窗面对面的方式定向，一个面向对面的输出面具有真空管的检测表面，其中电子倍增结构至少由邻近检测窗的半导体材料层组成。还公开了使用具有电子倍增结构的电子倍增的真空管。

4. 发明申请

US20150115992A1 GLASS SUBSTRATE FOR ELECTRONIC AMPLIFICATION AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于电子放大的玻璃基板及其制造方法
公开(公告)号：US20150115992A1
公开(公告)日：2015-04-30
申请号：US14405964
申请日：2013-02-28
申请人： HOYA CORPORATION
发明人： Takashi Fushie , Hajime Kikuchi
IPC分类号： C03C15/00 , G01R31/12 , H01J47/00 , H01J43/04
CPC分类号： C03C15/00 , G01R31/1227 , G01T1/2935 , H01J43/04 , H01J43/246 , H01J47/001 , Y10T428/24273
摘要： There is provided a glass substrate for electronic amplification having through holes formed on a plate-like glass member and used for causing an electron avalanche in the through holes, wherein a shape of the glass substrate for electronic amplification and a material of the glass member are determined so that an insulation resistance in a plate thickness direction per plane of 100 cm2 is 107 to 1011Ω.
摘要翻译：提供了一种用于电子放大的玻璃基板，其具有形成在板状玻璃构件上的通孔，用于在通孔中引起电子雪崩，其中用于电子放大的玻璃基板和玻璃构件的材料的形状为使得每100平方厘米的平板厚度方向的绝缘电阻为107〜1011Ω。

5. 发明申请

US20150060663A1 Electron source and X-ray fluorescence analyser using an electron source 审中-公开
标题翻译：使用电子源的电子源和X射线荧光分析仪
公开(公告)号：US20150060663A1
公开(公告)日：2015-03-05
申请号：US14474342
申请日：2014-09-02
申请人： Heikki Johannes Sipila , Evgeny FEDKOV , Aleksandr SEREBRIAKOV
发明人： Heikki Johannes Sipila , Evgeny FEDKOV , Aleksandr SEREBRIAKOV
IPC分类号： G01N23/225 , H01J43/04 , H01J43/14 , G01N23/22
CPC分类号： G01N23/2252 , G01N23/2204 , G01N2223/076 , G01N2223/204 , H01J3/023 , H01J33/02 , H01J37/252 , H01J43/04 , H01J43/14 , H01J2237/06358 , H01J2237/2561
摘要： An electron source of an X-ray fluorescence analyser includes a photon source (201) and a photoelectric converter (203, 204) for converting photons into electrons. An electron multiplier (203, 204) multiplies the electrons, and a focusing element (206, 207) focuses them to a beam. A gastight casing (209) encloses the photoelectric converter and the electron multiplier (203, 204). An electron-transparent membrane (213) covers a first opening in the casing at a location where the focused electron beam is directed out of the casing.
摘要翻译： X射线荧光分析仪的电子源包括用于将光子转换为电子的光子源（201）和光电转换器（203,204）。电子倍增器（203,204）将电子相乘，并且聚焦元件（206,207）将它们聚焦到光束。气体外壳（209）包围光电转换器和电子倍增器（203,204）。电子透明膜（213）在聚焦电子束被引导出壳体的位置处覆盖壳体中的第一开口。

6. 发明授权

US08525110B2 Wind ion neutral composition apparatus 有权
标题翻译：风离子中性组合仪
公开(公告)号：US08525110B2
公开(公告)日：2013-09-03
申请号：US13247168
申请日：2011-09-28
申请人： Federico Herrero , Hollis H. Jones , Theodore T. Finne , Andrew Nicholas
发明人： Federico Herrero , Hollis H. Jones , Theodore T. Finne , Andrew Nicholas
IPC分类号： H01J49/26
CPC分类号： H01J49/26 , H01J43/04 , H01J49/282
摘要： Embodiments of the present invention pertain to an apparatus that provides four simultaneous ion and neutral measurements as a function of altitude with variable sensitivity for neutral atmospheric species. The variable sensitivity makes it possible to extend the measurements over the altitude range of 100 to more than 700 kilometers. The four instruments included in the apparatus are a neutral wind-temperature spectrometer, an ion-drift ion-temperature spectrometer, a neutral mass spectrometer, and an ion mass spectrometer. The neutral wind-temperature spectrometer and ion-drift ion-temperature spectrometer are configured to separate O and N2 and O+ from H+ while the neutral mass spectrometer and the ion mass spectrometer are configured to separate mass with a resolution of one in sixty-four to enable metallic ion identification in the lower thermosphere. The energy analyzer features of the wind-temperature spectrometer and ion-drift ion-temperature spectrometer also enable the measurement of the thermosphere-to-exosphere transition in the Earth's upper atmosphere.
摘要翻译：本发明的实施例涉及一种提供四个同时离子和中性测量作为中性大气物种具有可变灵敏度的高度的函数的装置。可变灵敏度使得可以在100至700多公里的高度范围内扩展测量。设备中包括的四种仪器是中性风温谱仪，离子漂移离子温度谱仪，中性质谱仪和离子质谱仪。中性风温谱仪和离子漂移离子温度光谱仪被配置为从H +分离O和N2和O +，而中性质谱仪和离子质谱仪配置为分离质量，分辨率为六分之一至六分之一在下层热环境中实现金属离子识别。风温谱仪和离子漂移离子温度光谱仪的能量分析仪功能还可以测量地球上层大气层的热层 - 超环境过渡。

7. 发明申请

US20130134864A1 ELECTRON MULTIPLYING STRUCTURE FOR USE IN A VACUUM TUBE USING ELECTRON MULTIPLYING AS WELL AS A VACUUM TUBE USING ELECTRON MULTIPLYING PROVIDED WITH SUCH AN ELECTRON MULTIPLYING STRUCTURE 有权
标题翻译：电子扩散结构在真空管中使用，使用电子扩散作为真空管，使用电子扩散提供这样的电子扩散结构
公开(公告)号：US20130134864A1
公开(公告)日：2013-05-30
申请号：US13700185
申请日：2011-05-27
申请人： Gert Nützel , Pascal Lavoute , Richard Jackman
发明人： Gert Nützel , Pascal Lavoute , Richard Jackman
IPC分类号： H01J43/04 , H01J1/32
CPC分类号： H01J43/04 , H01J1/32 , H01J31/48 , H01J31/506 , H01J43/16
摘要： An electron multiplying structure for use in a vacuum tube using electron multiplying, the electron multiplying structure having an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube, wherein the electron multiplying structure at least is composed of a semi-conductor material layer adjacent the detection windows. Also disclosed is a vacuum tube using electron multiplying with an electron multiplying structure.
摘要翻译：一种用于使用电子倍增的真空管中的电子倍增结构，该电子倍增结构具有一个输入面，该输入面旨在以与真空管的入口窗面对面的方式定向，一个面向对面的输出面具有真空管的检测表面，其中电子倍增结构至少由邻近检测窗的半导体材料层组成。还公开了使用具有电子倍增结构的电子倍增的真空管。

8. 发明授权

US08221181B2 Electron multipliers and microchannel plates 有权
标题翻译：电子倍增器和微通道板
公开(公告)号：US08221181B2
公开(公告)日：2012-07-17
申请号：US13164223
申请日：2011-06-20
申请人： R. Gregory Downing , W. Bruce Feller , P. Brian White , Paul L. White
发明人： R. Gregory Downing , W. Bruce Feller , P. Brian White , Paul L. White
IPC分类号： H01J9/00 , H01J43/06
CPC分类号： H01J43/246 , H01J9/125 , H01J43/04 , H01J2231/5016
摘要： An electron multiplier can be fabricated by depositing an electron emissive material on a reticulated substrate, and forming the reticulated substrate into the electron multiplier.
摘要翻译：可以通过在网状衬底上沉积电子发射材料，并将网状衬底形成电子倍增器来制造电子倍增器。

9. 发明授权

US07990032B2 Electron multipliers and microchannel plates 有权
标题翻译：电子倍增器和微通道板
公开(公告)号：US07990032B2
公开(公告)日：2011-08-02
申请号：US12409297
申请日：2009-03-23
申请人： R. Gregory Downing , W. Bruce Feller , P. Brian White , Paul L. White
发明人： R. Gregory Downing , W. Bruce Feller , P. Brian White , Paul L. White
IPC分类号： H01J43/06
CPC分类号： H01J43/246 , H01J9/125 , H01J43/04 , H01J2231/5016
摘要： An electron multiplier can be fabricated by depositing an electron emissive material on a reticulated substrate, and forming the reticulated substrate into the electron multiplier.
摘要翻译：可以通过在网状衬底上沉积电子发射材料，并将网状衬底形成电子倍增器来制造电子倍增器。

10. 发明授权

US07592746B2 Photomultiplier 有权
标题翻译：光电倍增管
公开(公告)号：US07592746B2
公开(公告)日：2009-09-22
申请号：US11067844
申请日：2005-02-28
申请人： Ronald M. McAlpine
发明人： Ronald M. McAlpine
IPC分类号： H01J23/20
CPC分类号： H01J9/125 , H01J43/04
摘要： A photomultiplier (2) is disclosed having an element (16) for modifying the gain thereof either during manufacture (after the normal activation process) or in use, by changing the secondary electron emission characteristics of dynodes of the photomultiplier (2) and/or by modifying the electromagnetic field within the photomultiplier (2). The element (16) is made of a different material than the emissive surface of dynodes (8) of the photomultiplier (2). Methods of manufacturing a photomultiplier (2) and of tuning the gain of a photomultiplier (2) are also disclosed.
摘要翻译：公开了一种光电倍增管（2），其具有用于在制造期间（正常激活过程之后）或在使用中通过改变光电倍增管（2）的倍增电极的二次电子发射特性和/或通过修改光电倍增管（2）内的电磁场。元件（16）由与光电倍增管（2）的倍增极（8）的发射表面不同的材料制成。还公开了制造光电倍增管（2）和调整光电倍增管（2）的增益的方法。

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