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41. 发明申请

US20050051092A1 Vacuum processing apparatus 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20050051092A1
公开(公告)日：2005-03-10
申请号：US10812086
申请日：2004-03-30
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus including a transfer chamber inside of which an object wafer to be processed is transferred, and two processing chambers disposed outside of the transfer chamber and attached to the transfer chamber in a detachable manner. The inside of each processing chamber is decompressed so as to process the wafer being placed therein using a plasma generated from a processing gas supplied thereto, and two supply units supply the processing gas to the two processing chambers, respectively. The two supply units are disposed vertically outside of the transfer chamber and between the two processing chambers.
摘要翻译：一种真空处理装置，包括传送室，其内部传送有待处理的物体晶片，以及设置在传送室外部并以可拆卸的方式附接到传送室的两个处理室。每个处理室的内部被减压以便使用从供给的处理气体产生的等离子体处理放置在其中的晶片，并且两个供应单元分别将处理气体供应到两个处理室。两个供应单元垂直设置在传送室外部和两个处理室之间。

42. 发明申请

US20050051091A1 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US20050051091A1
公开(公告)日：2005-03-10
申请号：US10656334
申请日：2003-09-08
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23C16/00 , H01L21/00
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus comprising a transfer unit 112 disposed at a center thereof, plural processing chambers 103, 104, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and a mass flow controller unit 107 interposed between two processing chambers for supplying gas to the chambers.
摘要翻译：一种真空处理装置，包括设置在其中心的转印单元112，多个处理室103,104，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理; 以及插入在用于向所述室供给气体的两个处理室之间的质量流量控制器单元107。

43. 发明授权

US08740011B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08740011B2
公开(公告)日：2014-06-03
申请号：US13282561
申请日：2011-10-27
申请人： Susumu Tauchi , Akitaka Makino
发明人： Susumu Tauchi , Akitaka Makino
IPC分类号： B65D6/40 , B65D53/02 , B65D43/04
CPC分类号： H01L21/67126 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： A vacuum processing apparatus that includes a vacuum vessel; an opening disposed in a wall of the vacuum vessel, through which a sample to be processed is taken in and out; a valve body disposed outside the wall for airtightly sealing the opening; and a drive unit driving the valve body to carry out a sealing or opening operation. The drive unit includes a first member coupled to an actuator that moves along a substantially linear first direction as a result of operation of the actuator, and a second member coupled to the first member that moves along a substantially linear second direction that intersects with the first direction. The valve body, coupled to the second member, seals the opening as a result of movement of the second member.
摘要翻译：一种包括真空容器的真空处理装置; 设置在真空容器的壁中的开口，待处理的样品通过该开口被取出; 阀体，其设置在所述壁的外侧，用于气密地密封所述开口; 以及驱动单元驱动阀体进行密封或打开操作。所述驱动单元包括联接到致动器的第一构件，所述致动器由于所述致动器的操作而沿着基本线性的第一方向移动，以及联接到所述第一构件的第二构件，所述第二构件沿着与所述第一构件相交的基本上线性的第二方向移动方向。联接到第二构件的阀体由于第二构件的移动而密封开口。

44. 发明授权

US08569177B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08569177B2
公开(公告)日：2013-10-29
申请号：US13570433
申请日：2012-08-09
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
IPC分类号： H01L21/302
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译：提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器调节惰性气体的流量。当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力工艺气体供应管道的内壁蒸发。

45. 发明申请

US20130189800A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20130189800A1
公开(公告)日：2013-07-25
申请号：US13570433
申请日：2012-08-09
申请人： Tomohiro OHASHI , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
发明人： Tomohiro OHASHI , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译：提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器调节惰性气体的流量。当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力工艺气体供应管道的内壁蒸发。

46. 发明授权

US08048259B2 Vacuum processing apparatus 失效
标题翻译：真空加工设备
公开(公告)号：US08048259B2
公开(公告)日：2011-11-01
申请号：US11512309
申请日：2006-08-30
申请人： Michiaki Kobayashi , Tsutomu Nakamura , Takeo Uchino , Akitaka Makino , Masashi Nakagome
发明人： Michiaki Kobayashi , Tsutomu Nakamura , Takeo Uchino , Akitaka Makino , Masashi Nakagome
IPC分类号： C23F1/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/67126 , H01J37/32495 , H01J37/3266 , H01J37/32743
摘要： A plasma processing apparatus which contributes to reducing required time for maintenance and thereby to enhancing the efficiency of processing and that of apparatus operation is to be provided. A vacuum processing apparatus comprises a vacuum vessel in which a substrate-shaped sample is arranged in an internally arranged processing chamber in which the pressure is reduced; a transfer chamber to which the vacuum vessel is linked and through whose inside reduced in pressure the sample is transferred; a passage which establishes communication between the transfer chamber and the vacuum vessel in a state in which the transfer chamber and the processing chamber are linked to each other and through whose inside the sample not yet processed or already processed is transferred; and a covering member which is removably coupled to cover the internal wall face of the passage, wherein the sample is processed within the processing chamber with a plasma formed in the processing chamber.
摘要翻译：提供一种等离子体处理装置，其有助于减少维护所需的时间，从而提高处理效率和装置操作的效率。真空处理装置包括真空容器，其中基板形样品布置在其中压力降低的内部布置的处理室中; 传送室，真空容器连接到该传送室，并且其内部的压力降低，样品被传送; 在传送室和处理室彼此连接并且样品尚未处理或已经被处理的内部的状态下传送在传送室和真空容器之间建立连通的通道; 以及覆盖部件，其可移除地联接以覆盖通道的内壁面，其中，在处理室内用处理室中形成的等离子体处理样品。

47. 发明授权

US07828928B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US07828928B2
公开(公告)日：2010-11-09
申请号：US12199876
申请日：2008-08-28
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes an outer chamber comprising a vacuum container, an inner chamber in which a plasma used for processing a wafer is generated, the inner chamber being detachably disposed inside of the outer chamber, a wafer holder on which the wafer is located is disposed inside of the inner chamber, and an exhausting device disposed below the wafer holder which exhausts the inside of the inner chamber. The inner chamber is sealed in air-tight manner with respect to a space between the inner chamber and the outer chamber while the space is maintained at a vacuum pressure.
摘要翻译：一种真空处理装置，其特征在于，包括真空容器的外部室，产生用于处理晶片的等离子体的内部室，可拆卸地设置在所述外部室内部的内室，所述晶片所在的晶片保持架为并且设置在所述晶片保持器的下方排出所述内室的内部的排气装置。相对于内室和外室之间的空间，内室以气密方式密封，同时空间保持在真空压力。

48. 发明申请

US20100171061A1 VACUUM PROCESSING APPARATUS 有权
标题翻译：真空加工设备
公开(公告)号：US20100171061A1
公开(公告)日：2010-07-08
申请号：US12651701
申请日：2010-01-04
申请人： Susumu TAUCHI , Akitaka Makino
发明人： Susumu TAUCHI , Akitaka Makino
IPC分类号： F16K51/00
CPC分类号： H01L21/67126 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： The invention provides a highly reliable plasma processing apparatus having stable sealing performance. The vacuum processing apparatus comprises a vacuum vessel having its inside decompressed; an opening disposed in a wall of the vacuum vessel for communicating the inside with the outside thereof and through which a sample to be processed is taken in and out; a valve body 701 disposed outside the wall for airtightly sealing or opening the opening; and a drive unit for driving the valve body to carry out the sealing or opening operation, the drive unit comprising a first member 705 coupled to an actuator 702 that moves along a substantially linear first direction as a result of operation of the actuator, a second member 706 coupled to the first member 705 that moves along a substantially linear second direction that intersects with the first direction, and the valve body 701 coupled to the second member that seals the opening as a result of the movement of the second member.
摘要翻译：本发明提供了具有稳定的密封性能的高度可靠的等离子体处理装置。真空处理装置包括其内部减压的真空容器; 设置在真空容器的壁中的开口，用于将内部与其外部连通，并且待处理样品通过该开口被取出; 阀体701，其设置在所述壁的外侧，用于气密地密封或打开所述开口; 驱动单元，用于驱动阀体进行密封或打开操作，驱动单元包括第一构件705，第一构件705联接到作为致动器的操作的结果沿基本线性的第一方向移动的致动器702;第二构件构件706，其联接到第一构件705，其沿着与第一方向相交的基本上线性的第二方向移动;以及阀体701，其联接到由于第二构件的移动而密封开口的第二构件。

49. 发明申请

US20090165952A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20090165952A1
公开(公告)日：2009-07-02
申请号：US12039994
申请日：2008-02-29
申请人： Susumu Tauchi , Shingo Kimura , Minoru Yatomi , Masakazu Isozaki , Akitaka Makino
发明人： Susumu Tauchi , Shingo Kimura , Minoru Yatomi , Masakazu Isozaki , Akitaka Makino
IPC分类号： H01L21/306
CPC分类号： H01L21/6719
摘要： The invention provides a semiconductor manufacturing apparatus having a high productivity per installed area. In a vacuum processing apparatus provided with a plurality of cassettes on which a cassette is stored, a vacuum feed chamber arranged in a back face side of the atmospheric air feed chamber in a state of being coupled thereto, having a polygonal plane shape and structured such that the wafer is fed in a depressurized inner portion, and a plurality of vacuum processing chambers detachably coupled to a side surface of the vacuum feed chamber, arranged in adjacent thereto and processing the wafer fed to an inner portion from the vacuum feed chamber, a plurality of vacuum processing apparatuses includes a plurality of etching processing chamber carrying out an etching process of the wafer and at least one ashing processing chamber carrying out an ashing process of the wafer, the ashing processing chamber is coupled to a side surface in one of right and left sides as seen from the front face of the vacuum feed chamber, and the atmospheric air feed chamber is arranged so as to be biased to the one side to which the ashing processing chamber is coupled.
摘要翻译：本发明提供了一种具有每个安装面积的高生产率的半导体制造装置。在设置有多个盒体的真空处理装置中，盒子被存储在该真空处理装置上，一个真空进料腔室被布置在大气供给室的背面侧，处于与之相连的状态，具有多边形平面形状并被构造晶片被供给到减压内部，以及可拆卸地联接到真空进料室的侧表面的多个真空处理室，与真空进料室相邻布置并处理从真空进料室供给到内部的晶片，多个真空处理装置包括执行晶片的蚀刻处理的多个蚀刻处理室和进行晶片的灰化处理的至少一个灰化处理室，灰化处理室与右侧的一个侧面以及从真空进料室的前表面看到的左侧，大气供给室被布置成被偏压到t 灰色处理室与其相连的一侧。

50. 发明申请

US20090000739A1 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US20090000739A1
公开(公告)日：2009-01-01
申请号：US12230459
申请日：2008-08-29
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： H01L21/306
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus comprising a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and amass flow controller unit interposed between two processing chambers for supplying gas to the chambers.
摘要翻译：一种真空处理装置，包括设置在其中心的转印单元，多个处理室，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理; 并且插入在两个处理室之间的流量控制器单元，用于向腔室供应气体。

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